Abstract: An MOS transistor having a vertical channel disposed along the sides of a trench is disclosed. The transistor is formed in an epitaxial layer on a substrate, with the channel region formed within the epitaxial layer by way of ion implantation and diffusion; the ion implantation is done in such a manner that the epitaxial layer is divided into a portion above the channel region (source region) and a portion below the channel region (drain region). A trench is etched to extend through the epitaxial region into the substrate, gate oxide is grown along the sides of the trench, and a polysilicon gate electrode is deposited adjacent the gate oxide along the walls of the trench. The epitaxial layer allows the drain and source regions of the transistor to have substantially equal carrier concentrations, said concentrations being relatively low.

Abstract: A two-transistor programmable memory cell (FIG. 1A, 20) with one vertical floating gate transistor (VT) and one planar transistor (PT)--the planar transistor can be optimized for programming with low current (longer channel length and narrower channel width), while the vertical transistor can be optimized for reading with high current (shorter channel length and wider channel width). The vertical transistor is formed in a trench (22) with a source region (15) and a sub-source VT drain region (23). The planar transistor includes the source region (15) and a co-planar PT drain region (27).

Abstract: A vertical memory cell EPROM array (FIGS. 1, 1a and 1b) uses a vertical floating gate memory cell structure that can be fabricated with reduced cell area and channel length. The vertical memory cell memory array includes multiple rows of buried layers that are vertically stacked--a drain bitline (34) over a source groundline (32), defining a channel layer (36) in between. In each bitline row, trenches (22) of a selected configuration are formed, extending through the drain bitline and channel layer, and at least partially into the source groundline, thereby defining corresponding source (23), drain (24) and channel regions (25) adjacent each trench. The array can be made contactless (FIG. 1a), half-contact (FIG. 2a) or full contact (FIG. 2b), trading decreased access time for increased cell area.

Abstract: A transistor structure is disclosed which has a vertical channel which has its length controllable by currently-used diffusion processes, and which occupies a minimum of silicon surface area. The transistor is constructed by using a triple-level implant and diffusion process. The drain region is diffused into the silicon area by way of ion implantation and subsequent diffusion. The channel region, of opposite conductivity-type from the drain region, is implanted and diffused into the drain region. The source region is similarly implanted, and diffused into the channel region. A trench is etched into the silicon, extending through the source, channel and drain regions; gate oxide is grown in the trench and a polysilicon gate is deposited in the trench, conformal with the gate oxide. Transistor action takes place in the channel region along the walls of the trench, dependent upon the voltage applied to the gate electrode.

Abstract: An electrically erasable, progammable, read-only-memory, floating-gate, metal-oxide-semiconductor transistor constructed in a trench extending through layers of P-type and N-type material formed on a semiconductor substrate. The floating-gate transistor is comprised of two source-drain regions, a channel region, a floating gate, a programming gate, and gate-oxide layers and is characterized by a floating-gate to channel capacitance that is small relative to the programming-gate to floating-gate capacitance, thereby allowing charging of the floating gate using programming and erasing voltages of less magnitude than might otherwise be necessary.

Abstract: A method and structure for adjustment of the threshold voltage of a vertical metal-oxide-semiconductor transistor. Chemical vapor deposition of doped silicon dioxide and annealing are used to form a voltage-threshold-adjustment region in at least the channel layer of the transistor adjacent to the trench wall.

Abstract: An expandable particle of a vinyl chloride resin composition for beads-foaming which comprises (A) a vinyl chloride resin composition comprising (1) a vinyl chloride resin having a difference between T.sub.1 and T.sub.2 of not higher than 45.degree. C. and (2) 1 to 30 parts by weight of an acrylic resin per 100 parts by weight of the vinyl chloride resin, (B) 2 to 40 parts by weight of an easily volatile organic blowing agent, and (C) 0 to 30 parts by weight of an organic compound capable of dissolving or swelling said vinyl chloride resin, said parts of (B) and (C) being by weight per 100 parts by weight of the vinyl chloride resin composition (A); and said T.sub.1 and T.sub.2 being measured by a Koka Shiki Flow A-method under conditions of 1 mm in nozzle diameter, 1 mm in nozzle length, 6.degree. C./minute in temperature rise rate and 100 kg/cm.sup.2 in load.

Abstract: A process for preparing expandable particles of a vinyl chloride resin composition suitable for beads-foaming, comprising steps of:melting 100 parts by weight of a vinyl chloride resin having a difference between T.sub.1 and T.sub.2 of not higher than 45.degree. C. with 1 to 30 parts by weight of an acrylic resin to form a gelled composition,pelletizing said composition, andimpregnating the resulting pellets with an easily volatile organic blowing agent and an organic compound capable of dissolving or swelling said vinyl chloride resin; said T.sub.1 and T.sub.2 being measured by a Koka Shiki Flow A-method under conditions of 1 mm in nozzle diameter, 1 mm in nozzle length, 6.degree. C./minute in temperature rise rate and 100 kg/cm.sup.2 in load. By the process of the present invention, expandable particles moldable by beads-foaming to foamed articles having desired complicated shapes with smooth surfaces and high expansion ratios can be easily prepared.

Abstract: A process for preparing .alpha.-methylstyrene/acrylonitrile copolymer by suspension or bulk polymerization of .alpha.-methylstyrene and acrylonitrile with at least one member selected from the group consisting of styrene, chlorostyrene, para-methylstyrene, t-butylstyrene, acrylic ester and methacrylic ester in the presence of a difunctional organic peroxide having a 10 hour half-life temperature of 60.degree. to 120.degree. C. and capable of producing a t-butyl radical, at a polymerization temperature of 80.degree. to 135.degree. C. The process produces the copolymers having excellent transparency, heat resistance and strength in a high conversion in a short time.

Abstract: Expandable thermoplastic resin particles having excellent heat resistance, solvent resistance, foamability and moldability comprising a copolymer of 10 to 80% by weight of .alpha.-methylstyrene, 5 to 50% by weight of acrylonitrile and 0 to 70% by weight of at least one member selected from the group consisting of styrene, methyl methacrylate, vinyl toluene and t-butylstyrene, and an expanding agent impregnated in the copolymer, prepared easily in high conversions by an aqueous suspension polymerization using particular difunctional organic peroxides, preferably those capable of producing t-butoxy radicals, followed by impregnation of the produced polymer particles with the expanding agent.

Abstract: The mixture of water and the polyolefin resin particles impregnated with a volatile blowing agent are released from the interior of the pressure-resistant container under a constant temperature and constant pressure preferably keeping the partial pressure of the blowing agent constant, through at least one orifice having an area of 0.07 to 300 mm.sup.2, into a low-pressure zone.This invention gives various advantages when applied to the practical process resulting in expanded particles with superior properties which are free of blocking and remarkably uniform in the degree of expansion, and are useful for molding.

Abstract: A frictionally gearing apparatus. This apparatus comprises two shafts accommodated in a cylindrical casing, extending in opposite directions or in a same direction reaching out of said casing, said shafts being employed for the input and the output either fixedly or in alternation. Said shafts each has a rotary object confronting each other within said casing, said rotary objects varying in diametrical length and each forming a friction surface at their confronting portions, further a plurality of frictionally-surfaced globular members of a same size diametrically measuring next to the bigger rotary object being provided between the afore-mentioned rotary objects so as to make rotational, frictional contacts simultaneously with said rotary objects thereby enabling the increase or decrease of the input rotation through its two-step transmission to the output via said rotary objects and said globular members.