Patents by Inventor Klaus Becker

Klaus Becker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210245412
    Abstract: A method cuts an extruded pipe to length using a separating device. The separating device includes a separator rotating about an extrusion axis of the extruded pipe, the separator being rotatably mounted in the separating device, and cutting tools being arranged on the separator. The cutting tools are configured to carry out the separation. The method includes transferring energy to move the cutting tools. The energy is transferred from a stationary outer region of the separating device to a movable inner region of the separating device. The energy is transferred continuously or cyclically and the transferred energy is buffered in an energy storage device. The energy is transferred inductively or capacitively. A discharge time of the energy storage device is between 2% and 25% of a total separation cycle.
    Type: Application
    Filed: June 10, 2019
    Publication date: August 12, 2021
    Inventors: Heinrich Dohmann, Klaus Becker, Joerg Droege
  • Publication number: 20210238732
    Abstract: An advanced sputter target is disclosed. The advanced sputter target comprises two components, a porous carrier, and a metal material disposed within that porous carrier. The porous carrier is designed to be a high porosity, open cell structure such that molten material may flow through the carrier. The porous carrier also provides structural support for the metal material. The cell sizes of the porous carrier are dimensioned such that the capillary action and surface tension prohibits the metal material from spilling, dripping, or otherwise exiting the porous carrier. In some embodiments, the porous carrier is an open cell foam, a weave of strands or stacked meshes.
    Type: Application
    Filed: April 20, 2021
    Publication date: August 5, 2021
    Inventors: Graham Wright, Klaus Becker
  • Patent number: 11008649
    Abstract: An advanced sputter target is disclosed. The advanced sputter target comprises two components, a porous carrier, and a metal material disposed within that porous carrier. The porous carrier is designed to be a high porosity, open cell structure such that molten material may flow through the carrier. The porous carrier also provides structural support for the metal material. The cell sizes of the porous carrier are dimensioned such that the capillary action and surface tension prohibits the metal material from spilling, dripping, or otherwise exiting the porous carrier. In some embodiments, the porous carrier is an open cell foam, a weave of strands or stacked meshes.
    Type: Grant
    Filed: November 15, 2018
    Date of Patent: May 18, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Graham Wright, Klaus Becker
  • Patent number: 10896799
    Abstract: An IHC ion source with multiple configurations is disclosed. For example, an IHC ion source comprises a chamber, having at least one electrically conductive wall, and a cathode and a repeller disposed on opposite ends of the chamber. Electrodes are disposed on one or more walls of the ion source. Bias voltages are applied to at least one of the cathode, repeller and the electrodes, relative to the electrically conductive wall of the chamber. Further, the IHC ion source comprises a configuration circuit, which receives the various voltages as input voltages, and provides selected output voltages to the cathode, repeller and electrodes, based on user input. In this way, the IHC ion source can be readily reconfigured for different applications without rewiring the power supplies, as is currently done. This configuration circuit may be utilized with other types of ion sources as well.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: January 19, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Klaus Becker, Carlos M. Goulart, Daniel Alvarado, Daniel R. Tieger, Alexander S. Perel
  • Patent number: 10807901
    Abstract: One aspect relates to a method for producing an optical blank from synthetic quartz glass by vitrifying and shaping a porous, cylindrical SiO2 soot body having a longitudinal axis, in a heating zone including a melt mold with bottom plate. The SiO2 soot body vitrified in the heating zone at a vitrification temperature so as to form a full cylindrical, completely vitrified, transparent quartz glass body. Subsequently, the vitrified quartz glass body is shaped by softening in the melt mold at a softening temperature so as to form a viscous quartz glass mass which partly fills the volume of the melt mold, and cooling the quartz glass mass and removal from the melt mold so as to form the optical blank. During shaping in the melt mold, the full cylindrical quartz glass body is brought into contact by way of controlled supply with a centering means of the bottom plate.
    Type: Grant
    Filed: September 22, 2017
    Date of Patent: October 20, 2020
    Assignee: Heraeus Quarzglas GmbH & Co. KG
    Inventors: Andreas Kaske, Klaus Becker, Stefan Ochs
  • Patent number: 10732519
    Abstract: A substrate for an EUV mirror which contains a zero crossing temperature profile that departs from the statistical distribution is provided. A method for producing a substrate for an EUV mirror is also provided, in which the zero crossing temperature profile in the substrate is adapted to the operating temperature of the mirror. A lithography method using the substrate is also described.
    Type: Grant
    Filed: September 10, 2014
    Date of Patent: August 4, 2020
    Assignee: Heraeus Quarzglas GmbH & Co. KG
    Inventors: Klaus Becker, Stephan Thomas
  • Patent number: 10692697
    Abstract: An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: June 23, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Daniel Tieger, Klaus Becker
  • Publication number: 20200157675
    Abstract: An advanced sputter target is disclosed. The advanced sputter target comprises two components, a porous carrier, and a metal material disposed within that porous carrier. The porous carrier is designed to be a high porosity, open cell structure such that molten material may flow through the carrier. The porous carrier also provides structural support for the metal material. The cell sizes of the porous carrier are dimensioned such that the capillary action and surface tension prohibits the metal material from spilling, dripping, or otherwise exiting the porous carrier. In some embodiments, the porous carrier is an open cell foam, a weave of strands or stacked meshes.
    Type: Application
    Filed: November 15, 2018
    Publication date: May 21, 2020
    Inventors: Graham Wright, Klaus Becker
  • Publication number: 20200131071
    Abstract: A method for homogenizing glass includes the method: providing a cylindrical blank composed of the glass having a cylindrical outer surface that extends along a longitudinal axis of the blank between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and displacing the shear zone along the longitudinal axis of the blank. To enable a radial mixing within the shear zone in addition to the tangential mixing with the lowest possible time and energy input, starting from this method, cylindrical sections of the blank are adjacent to the shear zone on both sides, the first cylindrical section having a first central axis and the second cylindrical section having a second central axis, the first central axis and the second central axis being temporarily non-coaxial with each other.
    Type: Application
    Filed: October 24, 2019
    Publication date: April 30, 2020
    Applicant: Heraeus Quarzglas GmbH & Co. KG
    Inventors: Stephan Thomas, Jan Vydra, Martin Trommer, Michael Huenermann, Andreas Langner, Walter Lehmann, Stefan Hengster, Klaus Becker
  • Publication number: 20200131069
    Abstract: A known method for homogenizing glass includes the following steps: providing a cylindrical blank composed of the glass, having a cylindrical outer surface which extends between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and moving the shear zone along the longitudinal axis of the blank. To reduce the risk of cracks and fractures during homogenizing, it is proposed that a thermal radiation dissipator is used that at least partially surrounds the shear zone, the lateral dimension of which in the direction of the longitudinal axis of the blank is greater than the shear zone and smaller than the length of the blank, the thermal radiation dissipator being moved synchronously with the shear zone along the longitudinal axis of the blank.
    Type: Application
    Filed: October 24, 2019
    Publication date: April 30, 2020
    Applicant: Heraeus Quarzglas GmbH & Co. KG
    Inventors: Stephan Thomas, Jan Vydra, Martin Trommer, Michael Huenermann, Andreas Langner, Walter Lehmann, Stefan Hengster, Klaus Becker
  • Patent number: 10600611
    Abstract: An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed material, which may be in solid form is disposed in the crucible. In certain embodiments, the feed material is sputtered by ions and electrons in the plasma. In other embodiments, the feed material is heated so that it vaporizes. The ion source may be oriented so that the crucible is disposed in the lowest wall so that gravity retains the feed material in the crucible.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: March 24, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Klaus Becker, Daniel Alvarado, Michael St. Peter, Graham Wright
  • Publication number: 20200090916
    Abstract: An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a pocket or cavity into which the solid dopant material is disposed. When the solid dopant material melts, it remains contained within the pocket, thus not damaging or degrading the arc chamber. Additionally, the target holder can be moved from one or more positions where the pocket is at least partially in the arc chamber to one or more positions where the pocket is entirely outside the arc chamber. In certain embodiments, a sleeve may be used to cover at least a portion of the open top of the pocket.
    Type: Application
    Filed: February 6, 2019
    Publication date: March 19, 2020
    Inventors: Shreyansh Patel, Graham Wright, Daniel Alvarado, Klaus Becker, Daniel R. Tieger, Stephen Krause
  • Patent number: 10569354
    Abstract: A method for assembling cable wrapping tapes. From an adhesive tape parent roll, strip-like adhesive tapes (11), each having two cut edges (12a) on the sides, are produced from a textile material which has an adhesive coating (12) on one side, by cutting in the drawing direction of the parent roll. The cutting is performed using an ultrasound-excited cutting tool (1) and wherein the cutting is performed using a cooled cutting tool (1). An adhesive tape (11), having a strip-like textile carrier material (13) and an adhesive coating (12) applied to one side and two cut edges (12a) on the sides. The cut edges (12a) are created by ultrasound cutting, and the textile carrier material (13) of the carrier is fused to its cut edges (12a). No adhesive coating (12) exists on the cut edges (12a); which are free of lint and threads.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: February 25, 2020
    Assignee: Coroplast Fritz Müller GmbH & Co.
    Inventors: Christoph Lodde, Gülay Wittig, Thomas Zakrzowski, Klaus Becker
  • Patent number: 10527048
    Abstract: A submersible pump includes a bearing arrangement and a rotor shaft. The bearing arrangement includes a bearing cover, a bearing flange, and one or more bearing elements, each bearing element having an inner bearing ring, an outer bearing ring and a roller element. The rotor shaft is rotatably supported in the one or more bearing element about an axis of rotation extending in a longitudinal axial direction so that the inner bearing ring is configured to rotate along with the rotor shaft in an operating state. The bearing element is arranged at the bearing flange such that the bearing cover tensions each outer bearing ring in a longitudinal axial direction and such that a peripheral gap having a predefined axial width is formed in a radial direction between the outer bearing ring and the bearing cover and between the outer bearing ring and the bearing flange.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: January 7, 2020
    Assignee: SULZER MANAGEMENT AG
    Inventor: Klaus Becker
  • Publication number: 20190180971
    Abstract: An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed material, which may be in solid form is disposed in the crucible. In certain embodiments, the feed material is sputtered by ions and electrons in the plasma. In other embodiments, the feed material is heated so that it vaporizes. The ion source may be oriented so that the crucible is disposed in the lowest wall so that gravity retains the feed material in the crucible.
    Type: Application
    Filed: November 14, 2018
    Publication date: June 13, 2019
    Inventors: Klaus Becker, Daniel Alvarado, Michael St. Peter, Graham Wright
  • Patent number: 10290461
    Abstract: An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: May 14, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Daniel R. Tieger, Klaus Becker, Daniel Alvarado, Alexander S. Perel
  • Publication number: 20190122851
    Abstract: An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.
    Type: Application
    Filed: May 23, 2017
    Publication date: April 25, 2019
    Inventors: Daniel R. Tieger, Klaus Becker, Daniel Alvarado, Alexander S. Perel
  • Publication number: 20190051493
    Abstract: An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.
    Type: Application
    Filed: October 9, 2018
    Publication date: February 14, 2019
    Applicant: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Daniel Tieger, Klaus Becker
  • Publication number: 20180353992
    Abstract: The present invention relates to a process for the production of structured surfaces via application of a layer made of reactive hotmelt and then embossing of the surface, and also to an article thus produced.
    Type: Application
    Filed: April 26, 2016
    Publication date: December 13, 2018
    Applicant: Klebchemie M. G. Becker GmbH & Co. KG
    Inventors: Klaus BECKER-WEIMANN, Jens FANDREY
  • Patent number: 10147584
    Abstract: An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: December 4, 2018
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Frank Sinclair, Daniel Tieger, Klaus Becker