Abstract: One aspect relates to a method for producing an optical blank from synthetic quartz glass by vitrifying and shaping a porous, cylindrical SiO2 soot body having a longitudinal axis, in a heating zone including a melt mold with bottom plate. The SiO2 soot body vitrified in the heating zone at a vitrification temperature so as to form a full cylindrical, completely vitrified, transparent quartz glass body. Subsequently, the vitrified quartz glass body is shaped by softening in the melt mold at a softening temperature so as to form a viscous quartz glass mass which partly fills the volume of the melt mold, and cooling the quartz glass mass and removal from the melt mold so as to form the optical blank. During shaping in the melt mold, the full cylindrical quartz glass body is brought into contact by way of controlled supply with a centering means of the bottom plate.

Abstract: A substrate for an EUV mirror which contains a zero crossing temperature profile that departs from the statistical distribution is provided. A method for producing a substrate for an EUV mirror is also provided, in which the zero crossing temperature profile in the substrate is adapted to the operating temperature of the mirror. A lithography method using the substrate is also described.

Abstract: An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

Abstract: An advanced sputter target is disclosed. The advanced sputter target comprises two components, a porous carrier, and a metal material disposed within that porous carrier. The porous carrier is designed to be a high porosity, open cell structure such that molten material may flow through the carrier. The porous carrier also provides structural support for the metal material. The cell sizes of the porous carrier are dimensioned such that the capillary action and surface tension prohibits the metal material from spilling, dripping, or otherwise exiting the porous carrier. In some embodiments, the porous carrier is an open cell foam, a weave of strands or stacked meshes.

Abstract: A method for homogenizing glass includes the method: providing a cylindrical blank composed of the glass having a cylindrical outer surface that extends along a longitudinal axis of the blank between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and displacing the shear zone along the longitudinal axis of the blank. To enable a radial mixing within the shear zone in addition to the tangential mixing with the lowest possible time and energy input, starting from this method, cylindrical sections of the blank are adjacent to the shear zone on both sides, the first cylindrical section having a first central axis and the second cylindrical section having a second central axis, the first central axis and the second central axis being temporarily non-coaxial with each other.

Abstract: A known method for homogenizing glass includes the following steps: providing a cylindrical blank composed of the glass, having a cylindrical outer surface which extends between a first end face and a second end face, forming a shear zone in the blank by softening a longitudinal section of the blank and subjecting it to a thermal-mechanical intermixing treatment, and moving the shear zone along the longitudinal axis of the blank. To reduce the risk of cracks and fractures during homogenizing, it is proposed that a thermal radiation dissipator is used that at least partially surrounds the shear zone, the lateral dimension of which in the direction of the longitudinal axis of the blank is greater than the shear zone and smaller than the length of the blank, the thermal radiation dissipator being moved synchronously with the shear zone along the longitudinal axis of the blank.

Abstract: An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed material, which may be in solid form is disposed in the crucible. In certain embodiments, the feed material is sputtered by ions and electrons in the plasma. In other embodiments, the feed material is heated so that it vaporizes. The ion source may be oriented so that the crucible is disposed in the lowest wall so that gravity retains the feed material in the crucible.

Abstract: An ion source with an insertable target holder for holding a solid dopant material is disclosed. The insertable target holder includes a pocket or cavity into which the solid dopant material is disposed. When the solid dopant material melts, it remains contained within the pocket, thus not damaging or degrading the arc chamber. Additionally, the target holder can be moved from one or more positions where the pocket is at least partially in the arc chamber to one or more positions where the pocket is entirely outside the arc chamber. In certain embodiments, a sleeve may be used to cover at least a portion of the open top of the pocket.

Abstract: A method for assembling cable wrapping tapes. From an adhesive tape parent roll, strip-like adhesive tapes (11), each having two cut edges (12a) on the sides, are produced from a textile material which has an adhesive coating (12) on one side, by cutting in the drawing direction of the parent roll. The cutting is performed using an ultrasound-excited cutting tool (1) and wherein the cutting is performed using a cooled cutting tool (1). An adhesive tape (11), having a strip-like textile carrier material (13) and an adhesive coating (12) applied to one side and two cut edges (12a) on the sides. The cut edges (12a) are created by ultrasound cutting, and the textile carrier material (13) of the carrier is fused to its cut edges (12a). No adhesive coating (12) exists on the cut edges (12a); which are free of lint and threads.

Abstract: A submersible pump includes a bearing arrangement and a rotor shaft. The bearing arrangement includes a bearing cover, a bearing flange, and one or more bearing elements, each bearing element having an inner bearing ring, an outer bearing ring and a roller element. The rotor shaft is rotatably supported in the one or more bearing element about an axis of rotation extending in a longitudinal axial direction so that the inner bearing ring is configured to rotate along with the rotor shaft in an operating state. The bearing element is arranged at the bearing flange such that the bearing cover tensions each outer bearing ring in a longitudinal axial direction and such that a peripheral gap having a predefined axial width is formed in a radial direction between the outer bearing ring and the bearing cover and between the outer bearing ring and the bearing flange.

Abstract: An ion source with a crucible is disclosed. In some embodiments, the crucible is disposed in one of the ends of the ions source, opposite the cathode. In other embodiments, the crucible is disposed in one of the side walls. A feed material, which may be in solid form is disposed in the crucible. In certain embodiments, the feed material is sputtered by ions and electrons in the plasma. In other embodiments, the feed material is heated so that it vaporizes. The ion source may be oriented so that the crucible is disposed in the lowest wall so that gravity retains the feed material in the crucible.

Abstract: An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

Abstract: An ion source having improved life is disclosed. In certain embodiments, the ion source is an IHC ion source comprising a chamber, having a plurality of electrically conductive walls, having a cathode which is electrically connected to the walls of the ion source. Electrodes are disposed on one or more walls of the ion source. A bias voltage is applied to at least one of the electrodes, relative to the walls of the chamber. In certain embodiments, fewer positive ions are attracted to the cathode, reducing the amount of sputtering experienced by the cathode. Advantageously, the life of the cathode is improved using this technique. In another embodiment, the ion source comprises a Bernas ion source comprising a chamber having a filament with one lead of the filament connected to the walls of the ion source.

Abstract: An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

Abstract: The present invention relates to a process for the production of structured surfaces via application of a layer made of reactive hotmelt and then embossing of the surface, and also to an article thus produced.

Abstract: An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

Abstract: The present invention relates to an article whose surface has been at least partly sealed and to methods of its sealing, the sealing layer comprising a reactive melt layer and a coating layer. The invention provides a method of sealing at least part of the surface of an article, comprising the steps of: (a) applying a reactive melt layer based on polyurethane to at least one part of the surface of the article; (b) smoothing the reactive melt layer; and (c) applying a coating material to form a coating layer on the reactive melt layer, the coating layer being applied before the full curing of the reactive melt layer.

Abstract: An ion implantation system may include an ion source to generate an ion beam, a substrate stage disposed downstream of the ion source; and a deceleration stage including a component to deflect the ion beam, where the deceleration stage is disposed between the ion source and substrate stage. The ion implantation system may further include a hydrogen source to provide hydrogen gas to the deceleration stage, wherein energetic neutrals generated from the ion beam are not scattered to the substrate stage.

Abstract: Common solar radiation receivers are equipped with a chamber for transmission of an operating gas which is directed along to an absorber for solar radiation for thermal absorption. The absorber has a dome-shaped entry window made of quartz glass, wherein the inner side facing the absorber assumes a nominal interior temperature Ti of at least 950° C. during proper use, preferably at least 1000° C., whereas the outer side facing away from the absorber is exposed to the environment and subject to risk of devitrification. The invention relates to modifying the known solar radiation receiver so that a high absorber temperature can be set and thus a high efficiency of the solar thermal heating is enabled, without increasing the risk of devitrification in the region of the outer side of the entry window.

Abstract: A method for producing a mirror substrate blank made from titanium-doped silica glass for EUV lithography, having a thickness of at least 40 millimeters, includes steps of face grinding the surface of the blank and identifying data on defects in a surface layer of the blank. Light penetrates the blank at a predetermined angle of incidence ? of less than 90° at a location on the flat surface of the blank. The light scatters on a defect in the blank, and the scattered light is detected at a distance x from the penetration location on the surface of the blank by a light detection element arranged perpendicularly thereabove. The method further includes steps of determining the position of the defect in the surface layer based on the obtained data, and partial or complete removal of the surface layer in consideration of the position determination and forming the mirror substrate blank.