Patents by Inventor Klaus Schiess

Klaus Schiess has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11081455
    Abstract: A semiconductor device includes a semiconductor die having a main surface, a rear surface, outer edge sides extending between the main and rear surfaces, and a first conductive bond pad disposed on the main surface, an electrically insulating mold compound body formed around the outer edge sides of the semiconductor die with the main surface of the semiconductor die exposed from an upper surface of the mold compound body, a first metallization layer formed on the upper surface of the mold compound body and on the main surface of the semiconductor die, and a first bond pad extension formed in the first metallization layer. The first bond pad extension overlaps with the upper surface of the mold compound body. The first bond pad extension is conductively connected with the first conductive bond pad. The first bond pad extension is an externally accessible point of electrical contact of the device.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: August 3, 2021
    Assignee: Infineon Technologies Austria AG
    Inventors: Chan Lam Cha, Wei Han Koo, Thorsten Meyer, Klaus Schiess, Guan Choon Matthew Nelson Tee
  • Patent number: 10903133
    Abstract: A package encloses a power semiconductor die and has a package body with a top side, footprint side and sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; and a top layer arranged at the package top side and electrically connected with the second load terminal. A heat spreader is mounted onto the top layer with a bottom surface facing the top layer. The area of the top surface of the heat spreader is greater than the area of the bottom surface.
    Type: Grant
    Filed: January 8, 2020
    Date of Patent: January 26, 2021
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Publication number: 20210020539
    Abstract: A semiconductor package is disclosed. In one example, the semiconductor package includes a chip carrier, a semiconductor chip attached to the chip carrier, an encapsulation body encapsulating the semiconductor chip, and a mounting hole configured to receive a screw for screw mounting a heatsink onto a first side of the semiconductor package. A second side of the semiconductor package opposite the first side is configured to be surface mounted to an application board.
    Type: Application
    Filed: July 15, 2020
    Publication date: January 21, 2021
    Applicant: Infineon Technologies AG
    Inventors: Ralf Otremba, Teck Sim Lee, Klaus Schiess, Xaver Schloegel, Lee Shuang Wang, Mohd Hasrul Zulkifli
  • Publication number: 20200381380
    Abstract: Embodiments of molded packages and corresponding methods of manufacture are provided. In an embodiment of a molded package, the molded package includes a laser-activatable mold compound having a plurality of laser-activated regions which are plated with an electrically conductive material to form metal pads and/or metal traces at a first side of the laser-activatable mold compound. A semiconductor die embedded in the laser-activatable mold compound has a plurality of die pads. An interconnect electrically connects the plurality of die pads of the semiconductor die to the metal pads and/or metal traces at the first side of the laser-activatable mold compound.
    Type: Application
    Filed: May 28, 2020
    Publication date: December 3, 2020
    Inventors: Chee Hong Lee, Kok Yau Chua, Chii Shang Hong, Swee Kah Lee, Chee Yang Ng, Klaus Schiess
  • Publication number: 20200343205
    Abstract: A semiconductor device includes a semiconductor die having a main surface, a rear surface, outer edge sides extending between the main and rear surfaces, and a first conductive bond pad disposed on the main surface, an electrically insulating mold compound body formed around the outer edge sides of the semiconductor die with the main surface of the semiconductor die exposed from an upper surface of the mold compound body, a first metallization layer formed on the upper surface of the mold compound body and on the main surface of the semiconductor die, and a first bond pad extension formed in the first metallization layer. The first bond pad extension overlaps with the upper surface of the mold compound body. The first bond pad extension is conductively connected with the first conductive bond pad. The first bond pad extension is an externally accessible point of electrical contact of the device.
    Type: Application
    Filed: April 29, 2019
    Publication date: October 29, 2020
    Inventors: Chan Lam Cha, Wei Han Koo, Thorsten Meyer, Klaus Schiess, Guan Choon Matthew Nelson Tee
  • Patent number: 10763246
    Abstract: A device includes a driver circuit, a first semiconductor chip monolithically integrated with the driver circuit in a first semiconductor material, and a second semiconductor chip integrated in a second semiconductor material. The second semiconductor material is a compound semiconductor.
    Type: Grant
    Filed: July 11, 2017
    Date of Patent: September 1, 2020
    Assignee: Infineon Technologies AG
    Inventors: Ralf Otremba, Klaus Schiess, Oliver Haeberlen, Matteo-Alessandro Kutschak
  • Patent number: 10755999
    Abstract: A power semiconductor arrangement includes a carrier and packages. Each package: encloses a power semiconductor die having first and second load terminals and configured to conduct a die load current between the load terminals; has a package body with a top side, a footprint side and sidewalls extending from the footprint side to the top side; a lead frame structure configured to electrically and mechanically couple the package to the carrier with the package footprint side facing the carrier, the lead frame structure including at least one first outside terminal electrically connected with the first load terminal of the die; a top layer arranged at the package top side and electrically connected with the second load terminal of the die. A top heatsink is attached to each package top layer, electrically contacted to each package top layer, and configured to conduct at least a sum of the die load currents.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: August 25, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Uwe Kirchner, Matteo-Alessandro Kutschak, Klaus Schiess, Bernd Schmoelzer
  • Patent number: 10699987
    Abstract: A package encloses a power semiconductor die that has a first load terminal at a die frontside facing a footprint side of the package and a second load terminal arranged at a die backside facing a top side of the package. The package also includes a lead frame configured to electrically and mechanically couple the package to a support. The lead frame has a planar first outside terminal electrically connected with the first load terminal and a planar second outside terminal electrically connected with the second load terminal. The planar first outside terminal is configured to interface with the support by means of a first contact area. The planar second outside terminal is configured to interface with the support by means of a second contact area. The second contact area has a size in a range between 80% and 120% of a size of the first contact area.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: June 30, 2020
    Assignee: tInfineon Technologies Austria AG
    Inventors: Ralf Otremba, Chooi Mei Chong, Markus Dinkel, Josef Hoeglauer, Klaus Schiess, Xaver Schloegel
  • Patent number: 10698021
    Abstract: A device includes a leadframe having a diepad and leads, a compound semiconductor chip arranged over a first surface of the diepad and including gate, source electrode and drain electrodes, and an encapsulation material covering the compound semiconductor chip and diepad. A second surface of the diepad opposite the first surface is exposed from the encapsulation material. The device also includes a first lead of the leadframe electrically coupled to the gate electrode, a second lead of the leadframe electrically coupled to the source electrode, a third lead of the leadframe electrically coupled to the source electrode, and a fourth lead of the leadframe electrically coupled to the drain electrode. The third lead is configured to provide a sensing signal representing an electrical potential of the source electrode to a gate driver circuit. The gate driver circuit is configured to drive the gate electrode based on the sensing signal.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: June 30, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Klaus Schiess
  • Publication number: 20200144150
    Abstract: A package encloses a power semiconductor die and has a package body with a top side, footprint side and sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; and a top layer arranged at the package top side and electrically connected with the second load terminal. A heat spreader is mounted onto the top layer with a bottom surface facing the top layer. The area of the top surface of the heat spreader is greater than the area of the bottom surface.
    Type: Application
    Filed: January 8, 2020
    Publication date: May 7, 2020
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Patent number: 10566260
    Abstract: A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; a top layer arranged at the package top side and electrically connected with the second load terminal; and a heat spreader arranged external of the package body and in electrical contact with the top layer. A top surface of the heat spreader has an area greater than the area of the bottom surface.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: February 18, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Publication number: 20190295920
    Abstract: A power semiconductor arrangement includes a carrier and packages. Each package: encloses a power semiconductor die having first and second load terminals and configured to conduct a die load current between the load terminals; has a package body with a top side, a footprint side and sidewalls extending from the footprint side to the top side; a lead frame structure configured to electrically and mechanically couple the package to the carrier with the package footprint side facing the carrier, the lead frame structure including at least one first outside terminal electrically connected with the first load terminal of the die; a top layer arranged at the package top side and electrically connected with the second load terminal of the die. A top heatsink is attached to each package top layer, electrically contacted to each package top layer, and configured to conduct at least a sum of the die load currents.
    Type: Application
    Filed: March 25, 2019
    Publication date: September 26, 2019
    Inventors: Ralf Otremba, Uwe Kirchner, Matteo-Alessandro Kutschak, Klaus Schiess, Bernd Schmoelzer
  • Patent number: 10418319
    Abstract: A method of manufacturing a semiconductor device includes providing an electrically conductive carrier and placing a semiconductor chip over the carrier. The method includes applying an electrically insulating layer over the carrier and the semiconductor chip. The electrically insulating layer has a first face facing the carrier and a second face opposite to the first face. The method includes selectively removing the electrically insulating layer and applying solder material where the electrically insulating layer is removed and on the second face of the electrically insulating layer.
    Type: Grant
    Filed: May 14, 2013
    Date of Patent: September 17, 2019
    Assignee: Infineon Technologies AG
    Inventors: Oliver Haeberlen, Klaus Schiess, Stefan Kramp
  • Patent number: 10290566
    Abstract: In an embodiment, an electronic component includes a high-voltage depletion mode transistor including a current path coupled in series with a current path of a low-voltage enhancement mode transistor, a diode including an anode and a cathode, and a die pad. A rear surface of the high-voltage depletion mode transistor is mounted on and electrically coupled to the die pad. A first current electrode of the low-voltage enhancement mode transistor is mounted on and electrically coupled to the die pad. The anode of the diode is coupled to a control electrode of the high-voltage depletion mode transistor, and the cathode of the diode is mounted on the die pad.
    Type: Grant
    Filed: September 23, 2014
    Date of Patent: May 14, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Klaus Schiess, Oliver Haeberlen, Matteo-Alessandro Kutschak
  • Publication number: 20190080980
    Abstract: A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; a top layer arranged at the package top side and electrically connected with the second load terminal; and a heat spreader arranged external of the package body and in electrical contact with the top layer. A top surface of the heat spreader has an area greater than the area of the bottom surface.
    Type: Application
    Filed: September 7, 2018
    Publication date: March 14, 2019
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Patent number: 10204845
    Abstract: A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. First electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a first side face of the encapsulation body. Second electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a second side face of the encapsulation body opposite the first side face. A first group of the first electrical contact elements and a second group of the first electrical contact elements are spaced apart by a distance D that is greater than a distance P between adjacent first electrical contact elements of the first group and between adjacent first electrical contact elements of the second group. The distances D and P are measured between center axes of electrical contact elements.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: February 12, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Amirul Afiq Hud, Chooi Mei Chong, Josef Hoeglauer, Klaus Schiess, Lee Shuang Wang, Matthias Strassburg, Teck Sim Lee, Xaver Schloegel
  • Patent number: 10109609
    Abstract: A connection structure is provided that includes a semiconductor substrate, a first layer arranged on the semiconductor substrate, the first layer being configured to provide shielding against radioactive rays, a second layer arranged on the first layer, the second layer including solder including Pb, and an electrically conductive member arranged on the second layer.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: October 23, 2018
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Josef Höglauer, Jürgen Schredl, Xaver Schlögel, Klaus Schiess
  • Publication number: 20180301398
    Abstract: A package encloses a power semiconductor die that has a first load terminal at a die frontside facing a footprint side of the package and a second load terminal arranged at a die backside facing a top side of the package. The package also includes a lead frame configured to electrically and mechanically couple the package to a support. The lead frame has a planar first outside terminal electrically connected with the first load terminal and a planar second outside terminal electrically connected with the second load terminal, The planar first outside terminal is configured to interface with the support by means of a first contact area. The planar second outside terminal is configured to interface with the support by means of a second contact area. The second contact area has a size in a range between 80% and 120% of a size of the first contact area.
    Type: Application
    Filed: April 16, 2018
    Publication date: October 18, 2018
    Inventors: Ralf Otremba, Chooi Mei Chong, Markus Dinkel, Josef Hoeglauer, Klaus Schiess, Xaver Schloegel
  • Patent number: 10074597
    Abstract: The disclosure is directed to techniques to evenly distribute current in interdigited leadframes by decoupling current between interdigited pads. The leadframe may use a perpendicular structure between the leadframe conductive pads and the lead traces. The perpendicular structure provides a short path for the current to travel from electrode pad openings on a device to the lead traces carrying current to other portions of a circuit. The conductive pad may be parallel to the electrode pad opening to lower spreading resistance. In an example of a transistor, the transistor may have two or more electrode pads for every current carrying node. Therefore, several electrode pads may have the same node, such as the source or drain of the device. For example, two or more source pads may be connected though the leadframe to evenly distribute the current and decouple the current from a single transistor.
    Type: Grant
    Filed: January 20, 2017
    Date of Patent: September 11, 2018
    Assignee: Infineon Technologies Austria AG
    Inventors: Eung San Cho, Oliver Haeberlen, Klaus Schiess, Gilberto Curatola, Gerhard Prechtl
  • Publication number: 20180224496
    Abstract: A device includes a leadframe having a diepad and leads, a compound semiconductor chip arranged over a first surface of the diepad and including gate, source electrode and drain electrodes, and an encapsulation material covering the compound semiconductor chip and diepad. A second surface of the diepad opposite the first surface is exposed from the encapsulation material. The device also includes a first lead of the leadframe electrically coupled to the gate electrode, a second lead of the leadframe electrically coupled to the source electrode, a third lead of the leadframe electrically coupled to the source electrode, and a fourth lead of the leadframe electrically coupled to the drain electrode. The third lead is configured to provide a sensing signal representing an electrical potential of the source electrode to a gate driver circuit. The gate driver circuit is configured to drive the gate electrode based on the sensing signal.
    Type: Application
    Filed: April 2, 2018
    Publication date: August 9, 2018
    Inventors: Ralf Otremba, Klaus Schiess