Patents by Inventor Klemens Pruegl

Klemens Pruegl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210373094
    Abstract: Exemplary embodiments are directed to magnetoresistive sensors and corresponding fabrication methods for magnetoresistive sensors. One example of a magnetoresistive sensor includes a layer stack, wherein the layer stack includes a reference layer having a fixed reference magnetization, wherein the fixed reference magnetization has a first magnetic orientation. The layer stack furthermore includes a magnetically free system of a plurality of layers, wherein the magnetically free system has a magnetically free magnetization, wherein the magnetically free magnetization is variable in the presence of an external magnetic field, and wherein the magnetically free magnetization has a second magnetic orientation in a ground state. The magnetically free system has two ferromagnetic layers and an interlayer, wherein the interlayer is arranged between the two ferromagnetic layers and includes magnesium oxide.
    Type: Application
    Filed: May 19, 2021
    Publication date: December 2, 2021
    Applicant: Infineon Technologies AG
    Inventors: Bernhard ENDRES, Klemens PRUEGL
  • Patent number: 11171049
    Abstract: According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: November 9, 2021
    Assignee: Infineon Technologies AG
    Inventors: Werner Robl, Michael Fugger, Carsten Schaeffer, Michael Nelhiebel, Klemens Pruegl
  • Patent number: 10854669
    Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
    Type: Grant
    Filed: June 23, 2020
    Date of Patent: December 1, 2020
    Assignee: Infineon Technologies AG
    Inventors: Dirk Meinhold, Emanuele Bruno Bodini, Felix Braun, Hermann Gruber, Uwe Hoeckele, Dirk Offenberg, Klemens Pruegl, Ines Uhlig
  • Publication number: 20200321388
    Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
    Type: Application
    Filed: June 23, 2020
    Publication date: October 8, 2020
    Inventors: Dirk Meinhold, Emanuele Bruno Bodini, Felix Braun, Hermann Gruber, Uwe Hoeckele, Dirk Offenberg, Klemens Pruegl, Ines Uhlig
  • Patent number: 10712176
    Abstract: Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.
    Type: Grant
    Filed: July 18, 2017
    Date of Patent: July 14, 2020
    Assignee: Infineon Technologies AG
    Inventors: Juergen Zimmer, Klemens Pruegl
  • Patent number: 10692921
    Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: June 23, 2020
    Assignee: Infineon Technologies AG
    Inventors: Dirk Meinhold, Emanuele Bruno Bodini, Felix Braun, Hermann Gruber, Uwe Hoeckele, Dirk Offenberg, Klemens Pruegl, Ines Uhlig
  • Patent number: 10585148
    Abstract: An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). The magneto-resistive structure (500) also comprises a magnetic reference layer (506) having a non-closed flux reference magnetization pattern. The magnetic sensor device (500) further comprises a current generator (580) configured to generate an electric current in one or more layers of the magneto-resistive structure (501). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: March 10, 2020
    Assignee: Infineon Technologies AG
    Inventors: Anton Bachleitner Hofmann, Hubert Brueckl, Klemens Pruegl, Wolfgang Raberg, Armin Satz, Dieter Suess, Tobias Wurft
  • Patent number: 10571527
    Abstract: The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: February 25, 2020
    Assignee: Infineon Technologies AG
    Inventors: Dieter Suess, Hubert Brueckl, Klemens Pruegl, Wolfgang Raberg, Armin Satz
  • Patent number: 10571681
    Abstract: Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: February 25, 2020
    Assignee: Infineon Technologies AG
    Inventors: Roland Meier, Klemens Pruegl, Bernhard Winkler, Thomas Popp, Raimund Foerg
  • Publication number: 20200011943
    Abstract: A magnetoresistive sensor includes a first non-magnetic layer, a second non-magnetic layer, and a magnetic free bi-layer. The magnetic free bi-layer is disposed between first non-magnetic layer and the second non-magnetic layer, the magnetic free bi-layer including a first magnetic free layer coupled to a second magnetic free layer. The first magnetic free layer is coupled to the first non-magnetic layer, and the second magnetic free layer is coupled to the second non-magnetic layer. The second non-magnetic layer comprises a non-magnetic material having an atomic radius within 10% of an atomic radius of at least one of the first magnetic free layer and the second magnetic free layer.
    Type: Application
    Filed: July 6, 2018
    Publication date: January 9, 2020
    Applicant: Infineon Technologies AG
    Inventors: Juergen ZIMMER, Klemens PRUEGL
  • Publication number: 20200006418
    Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
    Type: Application
    Filed: September 10, 2019
    Publication date: January 2, 2020
    Inventors: Dirk Meinhold, Emanuele Bruno Bodini, Felix Braun, Hermann Gruber, Uwe Hoeckele, Dirk Offenberg, Klemens Pruegl, Ines Uhlig
  • Patent number: 10411060
    Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.
    Type: Grant
    Filed: May 4, 2017
    Date of Patent: September 10, 2019
    Assignee: Infineon Technologies AG
    Inventors: Dirk Meinhold, Emanuele Bruno Bodini, Felix Braun, Hermann Gruber, Uwe Hoeckele, Dirk Offenberg, Klemens Pruegl, Ines Uhlig
  • Publication number: 20190267283
    Abstract: According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.
    Type: Application
    Filed: May 7, 2019
    Publication date: August 29, 2019
    Inventors: Werner Robl, Michael Fugger, Carsten Schaeffer, Michael Nelhiebel, Klemens Pruegl
  • Patent number: 10332793
    Abstract: According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: June 25, 2019
    Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Werner Robl, Michael Fugger, Carsten Schaeffer, Michael Nelhiebel, Klemens Pruegl
  • Patent number: 10006968
    Abstract: Sensor devices and methods are provided where a second magnetoresistive sensor stack is provided on top of a first magnetoresistive sensor stack.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: June 26, 2018
    Assignee: Infineon Technologies AG
    Inventor: Klemens Pruegl
  • Patent number: 10008318
    Abstract: In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: June 26, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Gunther Mackh, Carsten Ahrens, Klemens Pruegl
  • Patent number: 9959890
    Abstract: A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. The second etching process can also etch a portion of the magnetoresistive stack. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: May 1, 2018
    Assignee: Infineon Technologies AG
    Inventors: Wolfgang Raberg, Andreas Strasser, Hermann Wendt, Klemens Pruegl
  • Patent number: 9934966
    Abstract: In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: April 3, 2018
    Assignee: Infineon Technologies AG
    Inventors: Guenther Ruhl, Klemens Pruegl
  • Patent number: 9915707
    Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.
    Type: Grant
    Filed: February 15, 2017
    Date of Patent: March 13, 2018
    Assignee: Infineon Technologies AG
    Inventors: Juergen Zimmer, Klemens Pruegl, Olaf Kuehn, Andreas Strasser, Ralf-Rainer Schledz, Norbert Thyssen
  • Publication number: 20180003776
    Abstract: The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.
    Type: Application
    Filed: May 23, 2017
    Publication date: January 4, 2018
    Inventors: Dieter Suess, Hubert Brueckl, Klemens Pruegl, Wolfgang Raberg, Armin Satz