Abstract: A radiological image reading device includes a MEMS mirror that scan a recording medium on which a radiological image is recorded with excitation light; a light detecting element that includes a plurality of channels, each channel including a photodiode array, and detects light emitted from an irradiation position of the excitation light on the recording medium; a MEMS mirror driving circuit that determines as a light detection channel to detect the light, a channel corresponding to the irradiation position of the excitation light, out of the plurality of channels; and a reading circuit that reads the detection result of the light from the channel determined by the MEMS mirror driving circuit.

Abstract: An ultraviolet sensor includes a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions. A filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region. The filter film lowers transmittance in a detection target wavelength range in the ultraviolet region. Each of each first pixel region and each second pixel region includes at least one pixel having an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode. Each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to a first output terminal. Each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to a second output terminal.

Abstract: An optical sensor includes: a light emitting element 40; a lower substrate 20 on which the light emitting element 40 is provided; an upper substrate 10 provided so that the light emitting element 40 is positioned between the upper substrate 10 and the lower substrate 20; and an optical block 30 provided on the upper substrate 10. The upper substrate 10 includes a division-type photodiode SD. The optical block 30 is configured to reflect light emitted from the light emitting element 40 toward a measurement target R, and light reflected by the measurement target R is incident onto the division-type photodiode SD.

Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

Abstract: Prepared is an n? type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n? type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n? type semiconductor substrate 1 is formed on the second principal surface 1b side of the n? type semiconductor substrate 1. After formation of the accumulation layer 11, the n? type semiconductor substrate 1 is subjected to a thermal treatment.

Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

Abstract: A radiological image reading device includes a MEMS mirror that scan a recording medium on which a radiological image is recorded with excitation light; a light detecting element that includes a plurality of channels, each channel including a photodiode array, and detects light emitted from an irradiation position of the excitation light on the recording medium; a MEMS mirror driving circuit that determines as a light detection channel to detect the light, a channel corresponding to the irradiation position of the excitation light, out of the plurality of channels; and a reading circuit that reads the detection result of the light from the channel determined by the MEMS mirror driving circuit.

Abstract: An ultraviolet sensor includes a silicon photodiode array having a plurality of first pixel regions and a plurality of second pixel regions. A filter film is disposed on each of the first pixel regions so as to cover each first pixel region, except on each second pixel region. The filter film lowers transmittance in a detection target wavelength range in the ultraviolet region. Each of each first pixel region and each second pixel region includes at least one pixel having an avalanche photodiode to operate in Geiger mode, and a quenching resistor connected in series to the avalanche photodiode. Each of the quenching resistors in the plurality of first pixel regions is connected through a first signal line to a first output terminal. Each of the quenching resistors in the plurality of second pixel regions is connected through a second signal line to a second output terminal.

Abstract: A radiation image detecting device includes a photodetecting element that detects fluorescence light, and a prism that is disposed on an optical path of excitation light traveling toward an imaging plate and between the photodetecting element and the imaging plate. The prism includes, as surface thereof, a side face that is opposed to the imaging plate, and a side face and a side face that are inclined relative to the side face. The prism is disposed so that the excitation light incident through the side face propagates inside and is output from the side face and so that reflection from the imaging plate incident through the side face propagates inside and is output from the side face. The photodetecting element is disposed so as to be opposed to a region different from a region where the reflection from the imaging plate is output, in the surface of the prism.

Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.

Abstract: The present invention provides an optical amplifying device which can be easily downsized, increased in output, and stabilized. An optical amplifying device 1A includes an optical amplifier 10A and an energy supplier 30. The optical amplifier 10A includes an optical amplifying medium 11 and a transparent medium 12. The energy supplier 30 supplies excitation energy (for example, excitation light) to the optical amplifying medium 11. The optical amplifying medium 11 is supplied with the excitation light to amplify light and output it. To-be-amplified light passes through the transparent medium 12 in the optical amplifying medium 11 a plurality of times. The transparent medium 12 can propagate the to-be-amplified light, for example, zigzag inside.

Abstract: Prepared is an n? type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n? type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n? type semiconductor substrate 1 is formed on the second principal surface 1b side of the n type semiconductor substrate 1. After formation of the accumulation layer 11, the n? type semiconductor substrate 1 is subjected to a thermal treatment.

Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

Abstract: Each light detecting unit includes a semiconductor region that outputs a carrier, and a surface electrode. In a photodiode array, a read wire is positioned between neighboring avalanche photodiodes. When a plane including a surface of the semiconductor region is set as a reference plane, a distance tb from the reference plane to the read wire is larger than a distance to from the reference plane to the surface electrode.

Abstract: Each light detecting unit includes a semiconductor region that outputs a carrier, and a surface electrode. In a photodiode array, a read wire is positioned between neighboring avalanche photodiodes. When a plane including a surface of the semiconductor region is set as a reference plane, a distance tb from the reference plane to the read wire is larger than a distance to from the reference plane to the surface electrode.

Abstract: A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

Abstract: Prepared is an n? type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n? type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n? type semiconductor substrate 1 is formed on the second principal surface 1b side of the n? type semiconductor substrate 1. After formation of the accumulation layer 11, the n? type semiconductor substrate 1 is subjected to a thermal treatment.

Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.