Abstract: A gas concentration measuring module (2X) includes a gas cell (10X) configured to form an introduction space (11X) into which a sample gas (50X) is introduced, an infrared light source (21X) disposed at one end of the gas cell (10X), a reference light receiving element (31X) and a signal light receiving element (32X) disposed at the other end of the gas cell (10X) and configured to receive infrared light emitted from the infrared light source (21X), and an inert gas chamber (40X) disposed on an optical path between the infrared light source (21X) and the reference light receiving element (31X) in the introduction space (11X) and in which an inert gas, inert with respect to the infrared light emitted from the infrared light source (21X) is hermetically enclosed.

Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a plurality of charge transfer electrodes 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, a plurality of openings OP for transmitting light are formed between charge transfer electrodes 2 that are adjacent to each other. Also, a plurality of openings OP for transmitting light may be formed inside each charge transfer electrode 2.

Abstract: In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.

Abstract: Prepared is an n? type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n? type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n? type semiconductor substrate 1 is formed on the second principal surface 1b side of the n? type semiconductor substrate 1. After formation of the accumulation layer 11, the n? type semiconductor substrate 1 is subjected to a thermal treatment.

Abstract: An optical element 20A which is composed of a light transmission characteristic medium, that has a refractive index higher than a refractive index of air, the optical element causes an incident laser beam to be propagated inside while reflecting the laser beam by a wall surface 20a a plurality of times, the optical element includes an incident window 21 which is located in a part of the wall surface 20a, that is for allowing the laser beam to be incident, an emitting window 22 which is located in a part of the wall surface 20a, that is for allowing the laser beam propagated inside to be emit, and wavelength dispersion compensating units 31 and 32 which are integrally located in parts of the medium, the wavelength dispersion compensating units compensate for wavelength dispersion by causing the laser beam to be transmitted or reflected at least twice.

Abstract: In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.

Abstract: The present invention provides an optical amplifying device which can be easily downsized, increased in output, and stabilized. An optical amplifying device 1A includes an optical amplifier 10A and an energy supplier 30. The optical amplifier 10A includes an optical amplifying medium 11 and a transparent medium 12. The energy supplier 30 supplies excitation energy (for example, excitation light) to the optical amplifying medium 11. The optical amplifying medium 11 is supplied with the excitation light to amplify light and output it. To-be-amplified light passes through the transparent medium 12 in the optical amplifying medium 11 a plurality of times. The transparent medium 12 can propagate the to-be-amplified light, for example, zigzag inside.

Abstract: In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.

Abstract: A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.

Abstract: A substrate beam 1b is formed so as to divide a membrane for enabling detection of an energy ray upon back illumination, there by suppressing distortion of the membrane and preventing defocus upon detection due to the distortion, or the like. The distance is set sufficiently short from each region of the membrane to a substrate frame or to the substrate beam, thereby decreasing substrate resistance and enabling high-speed reading operation.

Abstract: A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.

Abstract: A substrate beam 1b is formed so as to divide a membrane f or enabling detection of an energy ray upon back illumination, thereby suppressing distortion of the membrane and preventing defocus upon detection due to the distortion, or the like. The distance is set sufficiently short from each region of the membrane to a substrate frame or to the substrate beam, thereby decreasing substrate resistance and enabling high-speed reading operation.

Abstract: When light is incident on the photoelectric surface of this electron tube, photoelectrons are emitted. These photoelectrons are accelerated and incident on an electron beam irradiation diode. A reverse voltage of about 100 V is applied to the electron beam irradiation diode to form a depletion region almost throughout an anode layer and near the p-n junction interface of a silicon substrate. The incident accelerated electrons release a kinetic energy in a heavily doped p-type layer having an electron incidence surface and the depleted anode layer to form electron-hole pairs. In this case, since the heavily doped p-type layer having the electron incidence surface is very thin, the energy is hardly released in this layer, and almost all energy is released in the depletion region. Signal charges extracted from the electron-hole pairs formed upon releasing the energy are output as a signal from two electrodes.

Abstract: A digital X-ray imaging apparatus comprises an X-ray generator 6 for generating X-rays toward a subject, an X-ray imaging device 7 for detecting an image of X-rays having passed through the subject, a swivel member 4 and a horizontal movement means 8 provided with the X-ray generator 6 and the X-ray imaging device 7 opposed to each other to relatively move the X-ray generator 6 and the X-ray imaging device 7 with respect to the subject, a CPU 21 for producing a tomographic image in accordance with an imaging signal from the X-ray imaging device 7, frame memories and an image display unit 26 for displaying the tomographic image. The X-ray imaging device 7 includes a MOS image sensor having a plurality of two-dimensional light-receiving pixels. With this configuration, a tomographic image along a given tomographic plane can be produced by a signal X-ray imaging operation, and the imaging sensitivity of the digital X-ray imaging apparatus can be enhanced.

Abstract: In a photomultiplier of the present invention, a semiconductor device arranged in an envelope to oppose a photocathode is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by opitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer.

Abstract: A medical X-ray image processing apparatus, comprising an X-ray sensor which converts an image of X-rays penetrated an object into an electric signal using a solid-state image sensor and a data processor which processes the electric signal to generate an electric image signal corresponding to the X-ray image, compares the data of each picture element derived from the above-mentioned solid-state image sensor with the data of picture elements being adjacent to the picture element and present within a certain region, and corrects the data of the picture element referring to the data of the above-mentioned adjacent picture elements only when the data of the picture element is exceptionally different from the data of the adjacent picture elements by a predetermined reference value or more.

Abstract: A medical X-ray tomographing apparatus, wherein the output end surfaces of a plurality of optical fiber bundles are optically coupled to the image pickup surfaces of vertically long solid-state image pickup devices, such as one-dimensional image sensors, and the input end surfaces of a plurality of the optical fiber bundles having a vertically long cross-sectional shape being identical to that of the output end surfaces thereof are optically coupled individually to a plurality of vertically long divisions obtained by dividing the fluorescent surface of a scintillator in the width direction thereof. With this apparatus, it is not necessary to significantly contract the size of the image on the fluorescent surface, thereby remarkably reducing the number of the solid-state image pickup devices and the number of the divisions of the fluorescent surface.