Abstract: An ink tank containing ink including a pigment component effectively prevents a problem that an ink having a higher concentration and including a sedimentary pigment is led out, even in a case where the ink tank is left unused on a printing apparatus for a long time. To this end, an ink leading-out port placed in an ink containing chamber, and used to supply the ink to a printing head is located higher than a lowermost portion of the ink containing chamber, and is also formed in an inclined surface inclined to a gravitational direction. Thereby, the sedimentary pigment slides the inclined surface, and thus is settled down in a position away from the ink leading-out port.

Abstract: A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5?x?1.5, 0.5?y?2.5 and 1.5?z?4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

Abstract: An ink tank includes a stirrer supported in a freely moveable manner near an inner wall of an ink storage chamber. When the stirrer moves closest to the inner wall, a predetermined gap is formed between opposing surfaces of the inner wall and the stirrer.

Abstract: A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines wherein the memory cell includes, a variable resistance element for storing as information a resistance value and a Schottky diode connected in series to the variable resistance element. The variable resistance element has a recording layer composed of a composite compound containing at least two types of cation elements, at least one type of the cation element being a transition element having “d”-orbit, in which electrons are incompletely filled, the shortest distance between adjacent cation elements being 0.32 nm or less.

Abstract: An ink tank includes a stirrer supported in a freely moveable manner near an inner wall of an ink storage chamber. When the stirrer moves closest to the inner wall, a predetermined gap is formed between opposing surfaces of the inner wall and the stirrer.

Abstract: A drum type washing machine includes a water tub; a cylindrical rotary drum rotatably installed in the water tub such that a central axis of rotation of the rotary drum is horizontal or slanted; a water outlet provided on a bottom portion of the water tub; a motor for rotating the rotary drum; a water supplying unit for supplying wash water into the water tub; a water draining unit for draining the wash water from the water tub; and a controller for controlling the motor, the water supplying unit and the water draining unit to thereby perform a washing, a rinsing and a water-extracting process. A guiding member with a guiding surface is installed on an inner bottom portion of the water tub to facilitate collection of the wash water and guide the collected wash water toward the water outlet during the water-extracting process.

Abstract: An ink container for retaining ink includes an ink containing body, an elastically displaceable supporting member, a light emitting portion, a light receiving portion for receiving light from the light emitting portion, a display portion for displaying the received light, and a light guide portion for optically connecting the light receiving portion and the display portion so as to guide the light received by the receiving portion to the display portion. The supporting member at least partly functions as the light guide portion. The light receiving portion is located, with a gap with respect to the light emitting portion, so as to cover the light emitting portion. The light receiving portion approaches the light emitting portion when the supporting member approaches the ink containing body by being subjected to urging toward the ink containing body.

Abstract: A waste collecting device includes a first box including a top surface having a first opening, a bottom surface opposed to the top surface, and side surfaces connecting the top surface and the bottom surface and having a second opening, wherein the top surface, the bottom surface, and the side surfaces define a space allowing waste to be accommodated therein; a second box including a top surface, a bottom surface opposed to the top surface, and side surfaces connecting the top surface and the bottom surface and having a third opening, the third opening being in communication with the second opening; and a sending unit disposed in the first box and configured to send the waste in a direction away from the second box.

Abstract: A liquid container includes a housing having a supply port leading out liquid contained in the housing, a spring member configured to generate a negative pressure, a flexible member joined to the housing to form a liquid chamber, a plate member disposed between the flexible film and the spring member, a lid member configured to cover the flexible member and secured to the housing, and a rib member movably disposed in a space surrounded by the lid member and the flexible member and configured to regulate the shape of the flexible member and the position of the plate member.

Abstract: This invention provides a highly reliable liquid container without degrading a liquid accommodation efficiency or increasing a substantial cost. When the liquid container is impacted, the liquid container can protect against damage the flexible film that forms the liquid accommodation chamber. The recessed portion is provided on the inner surface of the cover member facing the plate material. Provided at the opening of the recessed portion is the shock absorbing sheet that elastically deforms into the recessed portion when the plate member is impacted.

Abstract: A nonvolatile semiconductor memory device comprises a plurality of first lines; a plurality of second lines crossing the plurality of first lines; a plurality of memory cells each connected at an intersection of the first and second lines between both lines and including a variable resistor operative to store information in accordance with a variation in resistance; and a protection film covering the side of the variable resistor to suppress migration of cations at the side of the variable resistor.

Abstract: A magnetoresistive device includes a magnetoresistive film and a pair of electrodes for applying a sense current substantially perpendicularly to the magnetoresistive film. The magnetoresistive film includes a magnetization pinned film including a first ferromagnetic layer having a magnetization direction substantially pinned in one direction, a magnetization free film including a second ferromagnetic layer whose magnetization direction changes in accordance with an external magnetic field applied thereto, an intermediate layer formed between the magnetization pinned film and the magnetization free film and having an insulating film and a metal conduction portion extending in the film thickness direction of the insulating film, and a layer containing an electrovalent or covalent compound formed near the metal conduction portion.

Abstract: A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate, each memory cell having a stack structure of a variable resistance element and an access element, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate as underlying the cell array, wherein the variable resistance element comprises a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5?x?1.5, 0.5?y?2.5 and 1.5?z?4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

Abstract: A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, bit lines and word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings connecting bit lines to the read/write circuit; and third vertical wirings connecting word lines to the read/write circuit, wherein the memory cell includes a variable resistance element. The variable resistance element has: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of the electrodes serving as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.

Abstract: A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, bit lines word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings disposed to connect the bit lines to the read/write circuit; and third vertical wirings disposed to connect the word lines to the read/write circuit, wherein the memory cell includes a variable resistance element for storing as information a resistance value, which has a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5?x?1.5, 0.5?y?2.5 and 1.5?z?4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

Abstract: An information recording/reproducing device according to an example of the present invention includes a first head and a second head each having a conductive region formed of a conductive material, a recording medium having a data area from which data is read by the first head, and a servo burst area from which a servo burst signal is read by the second head, a driver for positioning the first head and the recording medium based on the servo burst signal, and a resistance element for covering a surface of the conductive region of the second head.

Abstract: There is provided a cleaning apparatus capable of preventing counter-bending of a stripper blade in a more reliable manner. The cleaning apparatus removes toner from a circulation mechanism having a circulating surface that circulates in a two-dimensional manner around one pivotal shaft or two or more pivotal shafts parallel to each other in a housing, the toner attaching to the circulating surface. The cleaning apparatus includes a stripper blade, a securing section, and a counter-bending prevention member. The stripper blade has a substantially plate-shape, the width direction of which is parallel to the pivotal shaft and the longitudinal direction of which is perpendicular to the pivotal shaft. One longitudinal end portion of the stripper blade abuts the circulating surface to strip the toner attached to the circulating surface. The securing section is secured to the housing and secures the other longitudinal end portion of the stripper blade.

Abstract: A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate, each memory cell having a stack structure of a variable resistance element and an access element, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate as underlying the cell array, wherein the variable resistance element comprises a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5?x?1.5, 0.5?y?2.5 and 1.5?z?4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.

Abstract: A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate to have a stack structure of a variable resistance element and an access element, the variable resistance element storing a high resistance state or a low resistance state in a non-volatile manner, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate, wherein the variable resistance element includes: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of the electrodes serving as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site.