Abstract: A light-emitting device that includes a substrate, and at least one column portion, wherein the column portion includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is provided between the substrate and the light-emitting layer, the light-emitting layer includes a first well layer, and a barrier layer, the barrier layer includes a first layer provided between the first semiconductor layer and the first well layer, and the first layer has a cubic crystal structure.

Abstract: A piezoelectric element including a piezoelectric layer having a perovskite structure including lead, zirconium, and titanium, and an electrode provided on the piezoelectric layer is provided. In the piezoelectric layer, in a range of 50 nm or smaller from an interface between the piezoelectric layer and the electrode in a thickness direction, a ratio c/a of a lattice spacing a in a direction perpendicular to the thickness direction and a lattice spacing c in the thickness direction satisfies 0.986?c/a?1.014.

Abstract: A piezoelectric element includes a first electrode; a piezoelectric layer, placed on or above the first electrode, containing potassium, sodium, niobium, titanium, and oxygen; and a second electrode placed on or above the piezoelectric layer.

Abstract: Provided is a piezoelectric element including a first electrode provided above a substrate, a piezoelectric layer including a plurality of crystal grains containing potassium, sodium, and niobium and provided above the first electrode, and a second electrode provided above the piezoelectric layer. An atom concentration NK1 (atm %) of potassium contained in grain boundaries of the crystal grains and an atom concentration NK2 (atm %) of potassium contained in the crystal grains satisfy a relationship of 1.0<NK1/NK2?2.4.

Abstract: A piezoelectric element includes a first electrode; a second electrode; and a piezoelectric layer arranged between the first electrode and the second electrode, in which the piezoelectric layer is a thin film that includes a perovskite-type composite oxide which includes potassium, sodium, and niobium and which is preferentially oriented in the (100) plane, and a crystal structure of the perovskite-type composite oxide includes a basic lattice structure having an oxygen octahedron and a super lattice structure in which the oxygen octahedron is tilted.

Abstract: A piezoelectric element includes a first electrode disposed over a substrate, an orientation control layer disposed over the first electrode and containing titanium, a piezoelectric layer disposed over the orientation control layer and having a perovskite crystal structure, and a second electrode disposed over the piezoelectric layer. The orientation control layer has a thickness in the range of 5.0 nm to 22.0 nm.

Abstract: Provided is a piezoelectric element including a first electrode provided above a substrate, a piezoelectric layer provided above the first electrode, containing potassium, sodium, and niobium, and having a perovskite structure, and a second electrode provided above the piezoelectric layer. In a case where the piezoelectric layer is divided into two portions at a center thereof in a thickness direction, the piezoelectric layer includes a first portion on the first electrode side and a second portion on the second electrode side. The piezoelectric layer includes line defects. A density of the line defects in the second portion is higher than a density of the line defects in the first portion.

Abstract: A piezoelectric element includes: a first electrode containing crystal grains; a piezoelectric layer which contains potassium, sodium, and niobium and which is provided above the first electrode; and a second electrode provided above the piezoelectric layer, and the average grain diameter of the crystal grains is less than 550 nm.

Abstract: An electronic device includes a capacitor that is configured with a first electrode layer, an insulating layer, and a second electrode layer being formed in the order listed herein. At least one end of the capacitor is defined by an end of the second electrode layer. The insulating layer is provided so as to extend to a non-element region that is on the outside of one end of the capacitor. The insulating layer under the non-element region is formed thinner than the insulating layer under the capacitor. A difference between the thickness of the insulating layer under the non-element region and the thickness of the insulating layer under the capacitor is equal to or less than 50 nm.

Abstract: A piezoelectric element includes a first electrode disposed over a substrate, an orientation control layer disposed over the first electrode and containing titanium, a piezoelectric layer disposed over the orientation control layer and having a perovskite crystal structure, and a second electrode disposed over the piezoelectric layer. The orientation control layer has a thickness in the range of 5.0 nm to 22.0 nm.

Abstract: Provided is a piezoelectric element including a first electrode provided above a substrate, a piezoelectric layer including a plurality of crystal grains containing potassium, sodium, and niobium and provided above the first electrode, and a second electrode provided above the piezoelectric layer. An atom concentration NK1 (atm %) of potassium contained in grain boundaries of the crystal grains and an atom concentration NK2 (atm %) of potassium contained in the crystal grains satisfy a relationship of 1.0<NK1/NK2?2.4.

Abstract: Provided is a piezoelectric element including a first electrode provided above a substrate, a piezoelectric layer provided above the first electrode, containing potassium, sodium, and niobium, and having a perovskite structure, and a second electrode provided above the piezoelectric layer. In a case where the piezoelectric layer is divided into two portions at a center thereof in a thickness direction, the piezoelectric layer includes a first portion on the first electrode side and a second portion on the second electrode side. The piezoelectric layer includes line defects. A density of the line defects in the second portion is higher than a density of the line defects in the first portion.

Abstract: A piezoelectric element includes: a first electrode containing crystal grains; a piezoelectric layer which contains potassium, sodium, and niobium and which is provided above the first electrode; and a second electrode provided above the piezoelectric layer, and the average grain diameter of the crystal grains is less than 550 nm.

Abstract: A piezoelectric element including a piezoelectric layer having a perovskite structure including lead, zirconium, and titanium, and an electrode provided on the piezoelectric layer is provided. In the piezoelectric layer, in a range of 50 nm or smaller from an interface between the piezoelectric layer and the electrode in a thickness direction, a ratio c/a of a lattice spacing a in a direction perpendicular to the thickness direction and a lattice spacing c in the thickness direction satisfies 0.986?c/a?1.014.

Abstract: An electronic device includes a capacitor that is configured with a first electrode layer, an insulating layer, and a second electrode layer being formed in the order listed herein. At least one end of the capacitor is defined by an end of the second electrode layer. The insulating layer is provided so as to extend to a non-element region that is on the outside of one end of the capacitor. The insulating layer under the non-element region is formed thinner than the insulating layer under the capacitor. A difference between the thickness of the insulating layer under the non-element region and the thickness of the insulating layer under the capacitor is equal to or less than 50 nm.

Abstract: A piezoelectric element includes a first electrode; a piezoelectric layer, placed on or above the first electrode, containing potassium, sodium, niobium, titanium, and oxygen; and a second electrode placed on or above the piezoelectric layer.

Abstract: An electronic device includes a capacitor that is configured with a first electrode layer, an insulating layer, and a second electrode layer being formed in the order listed herein. At least one end of the capacitor is defined by an end of the second electrode layer. The insulating layer is provided so as to extend to a non-element region that is on the outside of one end of the capacitor. The insulating layer under the non-element region is formed thinner than the insulating layer under the capacitor. A difference between the thickness of the insulating layer under the non-element region and the thickness of the insulating layer under the capacitor is equal to or less than 50 nm.

Abstract: A piezoelectric element includes a first electrode; a second electrode; and a piezoelectric layer arranged between the first electrode and the second electrode, in which the piezoelectric layer is a thin film that includes a perovskite-type composite oxide which includes potassium, sodium, and niobium and which is preferentially oriented in the (100) plane, and a crystal structure of the perovskite-type composite oxide includes a basic lattice structure having an oxygen octahedron and a super lattice structure in which the oxygen octahedron is tilted.

Abstract: A piezoelectric element includes: a piezoelectric body; and a first electrode which is disposed on the piezoelectric body, and in which in a plan view viewed from a direction where the first electrode and the piezoelectric body are aligned, a region which is a surface of the piezoelectric body on which the first electrode is disposed, located at a vicinity of the first electrode, and within 10 ?m from an outer edge of the first electrode has a crystal surface.

Abstract: An electronic device includes a capacitor that is configured with a first electrode layer, an insulating layer, and a second electrode layer being formed in the order listed herein. At least one end of the capacitor is defined by an end of the second electrode layer. The insulating layer is provided so as to extend to a non-element region that is on the outside of one end of the capacitor. The insulating layer under the non-element region is formed thinner than the insulating layer under the capacitor. A difference between the thickness of the insulating layer under the non-element region and the thickness of the insulating layer under the capacitor is equal to or less than 50 nm.