Abstract: An electronic device includes a capacitor that is configured with a first electrode layer, an insulating layer, and a second electrode layer being formed in the order listed herein. At least one end of the capacitor is defined by an end of the second electrode layer. The insulating layer is provided so as to extend to a non-element region that is on the outside of one end of the capacitor. The insulating layer under the non-element region is formed thinner than the insulating layer under the capacitor. A difference between the thickness of the insulating layer under the non-element region and the thickness of the insulating layer under the capacitor is equal to or less than 50 nm.

Abstract: An electronic device includes a capacitor that is configured with a first electrode layer, an insulating layer, and a second electrode layer being formed in the order listed herein. At least one end of the capacitor is defined by an end of the second electrode layer. The insulating layer is provided so as to extend to a non-element region that is on the outside of one end of the capacitor. The insulating layer under the non-element region is formed thinner than the insulating layer under the capacitor. A difference between the thickness of the insulating layer under the non-element region and the thickness of the insulating layer under the capacitor is equal to or less than 50 nm.

Abstract: An electronic device includes a capacitor that is configured with a first electrode layer, an insulating layer, and a second electrode layer being formed in the order listed herein. At least one end of the capacitor is defined by an end of the second electrode layer. The insulating layer is provided so as to extend to a non-element region that is on the outside of one end of the capacitor. The insulating layer under the non-element region is formed thinner than the insulating layer under the capacitor. A difference between the thickness of the insulating layer under the non-element region and the thickness of the insulating layer under the capacitor is equal to or less than 50 nm.

Abstract: An electronic device includes a capacitor that is configured with a first electrode layer, an insulating layer, and a second electrode layer being formed in the order listed herein. At least one end of the capacitor is defined by an end of the second electrode layer. The insulating layer is provided so as to extend to a non-element region that is on the outside of one end of the capacitor. The insulating layer under the non-element region is formed thinner than the insulating layer under the capacitor. A difference between the thickness of the insulating layer under the non-element region and the thickness of the insulating layer under the capacitor is equal to or less than 50 nm.

Abstract: A piezoelectric element includes a first electrode; a seed layer comprised of a composite oxide having a perovskite structure and preferentially oriented to a (100) plane, the seed layer including bismuth in an A site and including iron and titanium in a B site, the seed layer having a thickness of less than 20 nm; a piezoelectric layer provided on the seed layer, the piezoelectric layer consisting of a piezoelectric material having a perovskite structure and preferentially oriented to a (100) plane; and a second electrode provided on the piezoelectric layer.

Abstract: A piezoelectric element includes a first electrode; a seed layer comprised of a composite oxide having a perovskite structure and preferentially oriented to a (100) plane, the seed layer including bismuth in an A site and including iron and titanium in a B site, the seed layer having a thickness of less than 20 nm; a piezoelectric layer provided on the seed layer, the piezoelectric layer consisting of a piezoelectric material having a perovskite structure and preferentially oriented to a (100) plane; and a second electrode provided on the piezoelectric layer.

Abstract: A liquid ejecting head includes a piezoelectric element including a first electrode, a piezoelectric layer overlying the first electrode with an orientation control layer therebetween, and a second electrode overlying the piezoelectric layer. The piezoelectric layer is made of a complex oxide having a perovskite structure including an A site containing lead and a B site containing zirconium and titanium. The orientation control layer is made of a complex oxide having a perovskite structure including an A site containing lanthanum and a B site containing nickel and titanium.

Abstract: A liquid ejecting head includes a piezoelectric element including a first electrode, a piezoelectric layer overlying the first electrode with an orientation control layer therebetween, and a second electrode overlying the piezoelectric layer. The piezoelectric layer is made of a complex oxide having a perovskite structure including an A site containing lead and a B site containing zirconium and titanium. The orientation control layer is made of a complex oxide having a perovskite structure including an A site containing lanthanum and a B site containing nickel and titanium.

Abstract: A droplet-ejecting head including a substrate including a pressure chamber communicating with a nozzle hole and also a piezoelectric element that includes a lower electrode, a piezoelectric layer which is formed above the lower electrode, and an upper electrode formed above the piezoelectric element and that causes a change in pressure in a liquid contained in the pressure chamber. The piezoelectric layer includes a first piezoelectric sub-layer located on the lower electrode and a second piezoelectric sub-layer located between the first piezoelectric sub-layer and the upper electrode. The first piezoelectric sub-layer has a polarization axis predominantly directed in an in-plane direction of the first piezoelectric sub-layer. The second piezoelectric sub-layer is predominantly (100)-oriented in the pseudocubic coordinate system.

Abstract: A piezoelectric element comprises a electrode and a piezoelectric layer made of a complex oxide having a perovskite structure containing at least bismuth, barium, iron, and titanium. A layered compound containing iron, barium, titanium and oxygen is formed between the piezoelectric layer and the electrode.

Abstract: A piezoelectric element comprises a first electrode including platinum, a piezoelectric layer disposed above the first electrode, made of a complex oxide having a perovskite structure containing at least bismuth, and a second electrode disposed above the piezoelectric layer. An oxide containing bismuth and platinum is disposed at the interface of the piezoelectric layer with the first electrode.

Abstract: A piezoelectric element comprises a electrode and a piezoelectric layer made of a complex oxide having a perovskite structure containing at least bismuth, barium, iron, and titanium. A layered compound containing iron, barium, titanium and oxygen is formed between the piezoelectric layer and the electrode.

Abstract: A piezoelectric element comprises a piezoelectric layer and an electrode which is provided with the piezoelectric layer. The piezoelectric layer comprises a complex oxide which has a perovskite structure including bismuth, iron, a first dopant element which is at least one type selected from a group formed from sodium, potassium, calcium, and strontium, and a second dopant element which is at least one type selected from a group formed from manganese, titanium, vanadium, niobium, and tin.

Abstract: A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one of magnesium and zinc and a second dopant element that is cerium.

Abstract: A piezoelectric element comprises a piezoelectric layer consisting of a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one selected from the group consisting of sodium, potassium, calcium, strontium and barium, and a second dopant element that is cerium.

Abstract: A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is magnesium and a second dopant element that is at least one of manganese, titanium, vanadium, niobium and tin.

Abstract: A piezoelectric element includes a first conductive layer, a second conductive layer disposed to face the first conductive layer, and a piezoelectric layer disposed between the first conductive layer and the second conductive layer and composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen. The piezoelectric layer includes a lead concentration gradient region in which the lead concentration increases from the first conductive layer side to the second conductive layer side. The lead concentration gradient region is disposed on the first conductive layer side of the piezoelectric layer.

Abstract: A piezoelectric element includes a first conductive layer, a second conductive layer facing the first conductive layer, and a piezoelectric layer between the first and second conductive layers, composed of a compound oxide containing at least lead, zirconium, titanium, and oxygen. The piezoelectric layer includes a first crystal layer on the first conductive layer side of the piezoelectric layer and a second crystal layer continued from the first crystal layer, nearer to the second conductive layer side than the first crystal layer. In the piezoelectric layer, the lead concentration in the first conductive layer side of the first crystal layer is lower than that in the second conductive layer side of the second crystal layer. In the piezoelectric layer, the oxygen concentration in the first conductive layer side of the first crystal layer is higher than that in the second conductive layer side of the second crystal layer.

Abstract: A liquid ejecting head including a fluid channel forming substrate including a pressure generating chamber communicating with a nozzle opening that ejects a liquid droplet and a piezoelectric element. The piezoelectric element has a first electrode, a piezoelectric material layer that is provided on the first electrode and has a perovskite monoclinic structure, and a second electrode formed on the piezoelectric material layer opposite to the first electrode. An angle formed between a direction of an electric field generated between the first and second electrodes and an orientation of a polarization moment of the piezoelectric material layer is greater than an angle formed between the direction of the electric field at a time when the piezoelectric constant of the piezoelectric material layer reaches a maximum level and the orientation of the polarization moment.

Abstract: A liquid-ejecting head includes a pressure-generating chamber communicatively connected to a nozzle opening and also includes a piezoelectric transducer including a first electrode, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer. The first electrode contains platinum and titanium oxide with a rutile content of 76.5 to 100 mole percent.