Abstract: On a semiconductor substrate comprising a semiconductor device, a drift layer of a first conductivity type is formed, and a well layer of a second conductivity type in which an impurity concentration decreases toward the outside of the semiconductor substrate and a channel stopper layer of the first conductivity type are formed in the surface portion of the semiconductor substrate in the termination region. The termination region includes an alleviating region having the well layer formed therein, a RESURF region positioned outside the alleviating region and having the well layer formed shallowly, and a channel stopper region having the channel stopper layer formed therein. A gate wiring electrode is formed on the alleviating region and a channel stopper electrode is formed on the channel stopper region. The gate wiring electrode and the channel stopper electrode are covered with a semi-insulating film electrically connecting therebetween.

Abstract: A motor control device includes a first storage configured to store indicated values of control parameters, motor control circuitry configured to control a motor based on the indicated values stored in the first storage, primary setting circuitry configured to set in the first storage at least one indicated value among the indicated values as a primary indicated value which corresponds to specific parameter among the control parameters, secondary setting circuitry configured to replace, based on a change instruction input via a terminal, the primary indicated value stored in the first storage with a secondary indicated value in accordance with the change instruction, and resetting circuitry configured to replace the secondary indicated value stored in the first storage with the primary indicated value when a return requirement is satisfied after the secondary setting circuitry has replaced the primary indicated value with the secondary indicated value.

Abstract: A motor control device includes a first storage configured to store indicated values of control parameters, motor control circuitry configured to control a motor based on the indicated values stored in the first storage, primary setting circuitry configured to set in the first storage at least one indicated value among the indicated values as a primary indicated value which corresponds to specific parameter among the control parameters, secondary setting circuitry configured to replace, based on a change instruction input via a terminal, the primary indicated value stored in the first storage with a secondary indicated value in accordance with the change instruction, and resetting circuitry configured to replace the secondary indicated value stored in the first storage with the primary indicated value when a return requirement is satisfied after the secondary setting circuitry has replaced the primary indicated value with the secondary indicated value.

Abstract: In one embodiment, a semiconductor light emitting device includes a substrate, an electrically-conductive reflection film, an active region, a first electrode, a transparent conductive film and a second electrode. In the active region, a first transparent electrode, a first conductivity type contact layer, a light emitting layer, a second conductivity type contact layer and a second transparent electrode are formed and stacked on the electrically-conductive reflection film. The first electrode is provided away from the active region on the electrically-conductive reflection film. One end of the transparent conductive film is provided to cover the upper portion of the second transparent electrode, while the other end of the transparent conductive film is provided above the electrically-conductive reflection film through an insulating film. The transparent conductive film is in contact with a lateral surface of the active region through the insulating film.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: One embodiment provides a method for manufacturing a semiconductor light emitting device, including: forming a semiconductor light emitting device wafer, by: forming a plurality of semiconductor layers on a principal surface of a substrate; and forming a P-type semiconductor layer on the semiconductor layers as an uppermost layer; and forming a plurality of surface irregularities on the P-type semiconductor layer, by putting the semiconductor light emitting device wafer into a heat treating furnace; and performing a heat treatment on the semiconductor light emitting device wafer with (i) a mixed gas of hydrogen and ammonia or (ii) a mixed gas of nitrogen and ammonia.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: A light emitting device, free from change of color even when the wavelength of a light emitting element shifts, includes a light emitting element (106) for emitting primary light having an intensity peak at a wavelength shorter than 400 nm; a silicone resin (111) provided to embed the light emitting element; and a fluorescent element (110) contained in the silicone resin to absorb the primary light and release visible light.

Abstract: A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.

Abstract: A light emitting device, free from change of color even when the wavelength of a light emitting element shifts, includes a light emitting element (106) for emitting primary light having an intensity peak at a wavelength shorter than 400 nm; a silicone resin (111) provided to embed the light emitting element; and a fluorescent element (110) contained in the silicone resin to absorb the primary light and release visible light.

Abstract: A light emitting device, free from change of color even when the wavelength of a light emitting element shifts, includes a light emitting element (106) for emitting primary light having an intensity peak at a wavelength shorter than 400 nm; a silicone resin (111) provided to embed the light emitting element; and a fluorescent element (110) contained in the silicone resin to absorb the primary light and release visible light.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.

Abstract: An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.