Abstract: An electrode of a metal, which is one of Group IV and VI elements, is deposited on an n-type InxAlyGa1−x−yN layer. Alternatively, after an electrode material of carbon, germanium), selenium, rhodium, tellurium, iridium, zirconium, hafnium, copper, titanium nitride, tungsten nitride, molybdenum or titanium silicide, is deposited on an n-type InxAlyGa1−x−yN layer or a p-type InxAlyGa1−x−yN layer, an impurity for increasing the carrier concentration of the semiconductor layer is ion-implanted, and the annealing is carried out. Thus, it is possible to provide a light emitting semiconductor device, which has a low contact resistance and a sufficient bond strength to the InxAlyGa1−x−yN layer while maintaining the crystallinity of the InxAlyGa1−x−yN layer.

Abstract: A light emitting element includes a multi-layered structure including an n-type nitride compound semiconductor layer and a p-type nitride compound semiconductor layer stacked on a substrate, and the multi-layered structure has formed an n-type region extending through the p-type semiconductor layer down to the n-type semiconductor layer to permit the p-side electrode and the n-side electrode to be formed on a common plane. A high-resistance region may be formed to surround the n-type region in order to more effectively block a leak current produced between the n-type region and the p-type nitride compound semiconductor. The light emitting element therefore includes no step on its surface, which simplifies the wafer process and contributes to wider applications of the semiconductor light emitting elements.

Abstract: An electronic component connecting method of connecting a first electronic component and a second electronic component via a connecting structure like a bump electrode in which a thermosetting conductive adhesive is applied on connecting electrodes on an IC chip, which serves as the first electronic component, by printing or the like, and is hardened, whereby tapered projecting electrodes as bump electrodes are formed to project in the form of, for example, a circular cone. Then, a conductive adhesive for connection is applied on the projecting electrodes. Before the conductive adhesive for connection is hardened, the IC chip is aligned with a wiring board, which serves as the second electronic component, so that the ends of the projecting electrodes and connecting electrodes on the wiring board are in contact with each other. In this aligned state, the conductive adhesive for connection is hardened.

Abstract: A gallium-nitride-based blue light emitting element that is manufacturable through a small number of processes and a method of manufacturing the same are disclosed. A first gallium-nitride-based semiconductor layer containing impurities of a first conductivity type, a gallium-nitridebased semiconductor active layer that is substantially intrinsic, and a second gallium-nitride-based semiconductor layer containing impurities of a second conductivity type that is opposite to the first conductivity type are formed according to a thermal CVD method and are left in an inert gas to cool by themselves.

Abstract: An electronic component connecting method of connecting a first electronic component and a second electronic component via a connecting structure like a bump electrode in which a thermosetting conductive adhesive is applied on connecting electrodes on an IC chip, which serves as the first electronic component, by printing or the like, and is hardened, whereby tapered projecting electrodes as bump electrodes are formed to project in the form of, for example, a circular cone. Then, a conductive adhesive for connection is applied on the projecting electrodes. Before the conductive adhesive for connection is hardened, the IC chip is aligned with a wiring board, which serves as the second electronic component, so that the ends of the projecting electrodes and connecting electrodes on the wiring board are in contact with each other. In this aligned state, the conductive adhesive for connection is hardened.

Abstract: A piezoelectric component prevents development of a short circuit between separate electrodes of a piezoelectric element and provides a high level of connection reliability. The piezoelectric component includes a piezoelectric element utilizing a longitudinal oscillation mode and being mounted on a mounting substrate. The piezoelectric element has on one main surface thereof a first electrode and a second electrode formed by dividing electrode material via longitudinally extending linear grooves and, on the other main surface, a third electrode. Conductive support members are secured to node sections of the first and second electrodes so as to be spaced apart from each other with respect to the longitudinal dimension of the piezoelectric substrate. The support members are adhered to and secured to pattern electrodes of the mounting substrate by conductive adhesive.

Abstract: A piezoelectric element prevents the development of a short circuit between separate electrodes and provides a high level of connection reliability. The piezoelectric element utilizing a longitudinal oscillation mode includes a piezoelectric substrate which has on one main surface thereof a first electrode and a second electrode separated by longitudinally extending linear grooves and, on the other main surface, a third electrode. Conductive support members are secured to node sections of the first and second electrodes so as to be spaced apart from each other with respect to the longitudinal dimension of the piezoelectric substrate.

Abstract: An ultrasonic sensor includes: a floored cylindrical case, a piezoelectric vibration element and input-output terminals. The floored cylindrical case has a separately prepared cylinder part and a separately prepared vibration part, and the cylinder part and the vibration part are adhered together with an adhesive material having an elastic modulus in the range from 100 through 20,000 kgf/mm.sup.2 at a temperature range from 25 through 125.degree. C. The piezoelectric vibration element is disposed on the inner bottom floor of the floored cylindrical case. The input-output terminals are electrically connected to the piezoelectric vibration element and are adapted for electrical connection to outside of the floored cylindrical case.

Abstract: A piezoelectric component prevents development of a short circuit between separate electrodes of a piezoelectric element and provides a high level of connection reliability. The piezoelectric component includes a piezoelectric element utilizing a longitudinal oscillation mode and being mounted on a mounting substrate. The piezoelectric element has on one main surface thereof a first electrode and a second electrode formed by dividing electrode material via longitudinally extending linear grooves and, on the other main surface, a third electrode. Conductive support members are secured to node sections of the first and second electrodes so as to be spaced apart from each other with respect to the longitudinal dimension of the piezoelectric substrate. The support members are adhered to and secured to pattern electrodes of the mounting substrate by conductive adhesive.

Abstract: A semiconductor light emitting diode having a high surge resistance and high reliability has a structure which includes an additional capacitor formed between an anode and a cathode of the light emitting element. Specifically, in an LED having an n-type GaN semiconductor layer, a GaN-based active layer and a p-type GaN-based semiconductor layer on a sapphire substrate, the cathode is formed on the n-type GaN semiconductor layer and an electrode wiring extends from the top of the p-type GaN-based semiconductor layer to form a capacitor.

Abstract: There is disclosed a semiconductor device formed on a sapphire substrate, for example, a blue LED of a double-hetero structure having a laminated structure which comprises a first cladding layer made of a first conductivity type gallium nitride based semiconductor, an active layer made of a gallium nitride based semiconductor into which impurity is not doped intentionally, and a second cladding layer made of a second conductivity type gallium nitride based semiconductor which being opposite to the first conductivity type on a sapphire substrate. A surface of the sapphire substrate is polished to have optical transmissivity of more than 60%.

Abstract: A piezoelectric element prevents the development of a short circuit between separate electrodes and provides a high level of connection reliability. The piezoelectric element utilizing a longitudinal oscillation mode includes a piezoelectric substrate which has on one main surface thereof a first electrode and a second electrode separated by longitudinally extending linear grooves and, on the other main surface, a third electrode. Conductive support members are secured to node sections of the first and second electrodes so as to be spaced apart from each other with respect to the longitudinal dimension of the piezoelectric substrate.

Abstract: There is disclosed a blue light emitting device having a laminated structure, which comprises a buffer layer made of a first conductivity type GaN-based semiconductor, a first cladding layer made of the first conductivity type GaN-based semiconductor, an active layer made of a substantially intrinsic GaN-based semiconductor, and a second cladding layer made of a second conductivity type GaN-based semiconductor, on a conductive substrate such as a conductive sapphire substrate. The GaN-based semiconductors of the present invention are made of quaternary compound semiconductor layers, and preferably made of In.sub.x A.sub.y Ga.sub.1-x-y N whose mole fraction values x, y satisfy 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1 and x+y.ltoreq.1. The mole fraction values x, y are selected to obtain desired luminous wavelength and intensity.

Abstract: A method of manufacturing blue light-emitting device is disclosed wherein a laminated structure comprising a p-type In.sub.x Al.sub.y Ga.sub.1-x-y N layer and an n-type In.sub.x Al.sub.y Ga.sub.1-x-y N layer are etched selectively by virtue of a parallel plate type plasma etching (RIE) using etching gas including boron trichloride (BCl.sub.3) and chlorine (Cl.sub.2).

Abstract: A light-emitting semiconductor device comprising an n-type cladding layer provided on a surface of a substrate and having concentric first and second parts, a first electrode mounted on the first part of the n-type cladding layer, a p-type cladding layer provided above the surface of the substrate and surrounding the first electrode and the second part of the n-type cladding layer, and a second electrode provided on the p-type cladding layer.

Abstract: A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1.times.10.sup.20 cm.sup.-3 of Mg and 2.times.10.sup.19 cm.sup.-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5.times.10.sup.18 cm.sup.-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.

Abstract: This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.

Abstract: A thick layer of electrode material paint is formed on a flat surface. A film of the electrode material paint is formed on an element by dipping the element into the layer. In the next step, a thinner layer of the electrode material paint than the aforementioned layer is formed on a flat surface. Into the thinner layer of the electrode material paint, the film of the electrode material paint formed on the element is dipped. Alternatively, the element may first be dipped into a thinner layer of the electrode material paint so that a thin film of the electrode material paint is formed on the element. The film formed on the element is then dipped into a thick layer of the electrode material paint and then again into a thin layer of the electrode material paint in such order. By firing the film of the electrode material paint obtained in this manner, an electronic element having external electrodes of a uniform thickness can be obtained.

Abstract: According to this invention, a semiconductor laser device includes a compound semiconductor substrate, a double hetero structure formed on the compound semiconductor substrate and having an active layer and first and second cladding layers which interpose the active layer, a current blocking region formed in one facet portion of the double hetero structure in a resonator direction. A reflecting layer is arranged on the other facet of the double hetero structure in the resonator direction and has a reflectance higher than that of a natural cleavage surface, thereby shifting the oscillation wavelength of the laser device to a long wavelength side with respect to the wavelength of spontaneous radiation emitted from one facet of the double hetero structure.

Abstract: A semiconductor light-emitting element includes a semiconductor substrate of a first conductivity type, a lower cladding layer formed on the semiconductor substrate and constituted by an InGaAlP-based compound of the first conductivity type, an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAlAs, and InGaAs, and an upper cladding layer formed on the active layer, and constituted by the InGaAlP-based compound of a second conductivity type, wherein the InGaAlP-based compound is represented by a formula In.sub.y (Ga.sub.1-x Al.sub.x).sub.y P, where x is in the range of 0.3 to 0.7 and y is in the range of 0.45 to 0.55.