Abstract: A semiconductor device includes a semiconductor wafer in which semiconductor chip forming regions and a scribe region located between the semiconductor chip forming regions are formed, a plurality of semiconductor chip circuit portions provided over the semiconductor wafer, a plurality of first conductive layers, provided in each of the semiconductor chip forming regions, which is electrically connected to each of the circuit portions, and a first connecting portion that electrically connects the first conductive layers to each other across a portion of the scribe region. An external power supply or grounding pad is connected to any one of the first conductive layer and the first connecting portion. The semiconductor device includes a communication portion, connected to the circuit portion, which performs communication with the outside by capacitive coupling or inductive coupling.

Abstract: The hot-dip aluminum alloy plated steel has a base steel and a plated layer, in which the composition of the plated layer contains, by % by mass, Fe: 25% to 75%, Mg: 2% to 20%, and Ca: 0.02% to 2% with a remainder of Al and inevitable impurities, the plated layer contains one or both of an ?-Mg phase and an Al3Mg2 phase, and the sum of the partial volume fraction of the ?-Mg phase and the partial volume fraction of the Al3Mg2 phase in a range of a depth of 5 ?m from a surface of the plated layer is 1% to 40%.

Abstract: A clock converting circuit (1) receives and then converts m-phase clocks of a frequency f having a phase difference of 1/(f×m) to n-phase clocks of the frequency f having a phase difference of 1/(f×n). A single-phase clock generating circuit (2) receives the n-phase clocks of the frequency f having a phase difference equivalent time of 1/(f×n) to generate single-phase clocks in synchronism with the rising or falling edges of the n-phase clocks. Since the frequency of the m-phase clocks inputted to the clock converting circuit (1) is ‘f’, if a desired frequency of the single-phase clocks is decided, then ‘n’ can be obtained from the equation: the frequency of the single-phase clocks is equal to (f×n). This value of ‘n’ is set to the clock converting circuit (1), thereby obtaining the n-phase clocks of the frequency f from the m-phase clocks of the frequency f to provide single-phase clocks of a desired frequency.

Abstract: There is provided an aging diagnostic device including: a reference ring oscillator (101) that constitutes a ring oscillator using an odd-numbered plurality of logic gates constituted using a CMOS circuit; a test ring oscillator (102) that constitutes a ring oscillator using an odd-numbered plurality of logic gates having the same configuration as that of the logic gate; a load unit (104) that inputs a load signal to the test ring oscillator (102); a control unit (105) that simultaneously inputs a control signal instructing a start of oscillation of the reference ring oscillator (101) and the test ring oscillator (102) to the reference ring oscillator (101) and the test ring oscillator (102); and a comparison unit (103) that compares differences in the amount of movement of pulses within the reference ring oscillator (101) and the test ring oscillator (102), respectively, in the same time.

Abstract: A control voltage generating circuit according to an aspect of the present invention includes: a reference voltage unit that includes a plurality of first transistors of the same conductivity type connected in series between a first power supply and a second power supply, and generates a drain voltage of one of the plurality of first transistor as a reference voltage; and a voltage conversion unit that includes a plurality of second transistors connected in series between the first power supply and the second power supply and having the same conductivity type as that of the reference voltage, supplies the reference voltage to a gate of one of the plurality of second transistors, and outputs a drain voltage of one of the plurality of second transistors as a control voltage.

Abstract: To provide, for example, a pulse input type power amplifying apparatus that can be operated at low voltage and low power, effectively suppressing generation of harmonic component. The amplifying apparatus includes at least two amplification circuits, one and other amplification circuits, composed of multiple amplifiers whose output sides are connected to each other, driven at the same frequency. The multiple amplifiers forming the one amplification circuit are configured with a first inverting amplifier M12 inputting and amplifying a reference pulse, and a second inverting amplifier M11 to which an inverted pulse formed by shifting and inverting the phase of the reference pulse is inputted. The other amplification circuit is configured with the first inverting amplifier M14 and the second inverting amplifier M13 to each of which other wide pulse with a width greater than that of the reference pulse is commonly inputted.

Abstract: An electronic circuit includes: a first power line capable of supplying power; a second power line capable of supplying power independently from the first power line; a main circuit connected to the second power line; a detector that detects the supply of power from the first power line or the second power line; and a controller connected to the first power line and the second power line, wherein the controller controls a voltage or a current supplied from the first power line and supplies the voltage or the current to the main circuit when the detector detects supply of power from the first power line.

Abstract: A semiconductor wafer in which a plurality of regions, designed to become semiconductor chips are provided in a matrix array with interposition of a dicing line(s) respectively separating the regions. The semiconductor wafer comprises: a plurality of test pads provided in an area(s) of the semiconductor wafer disposed between the semiconductor chips, inclusive of the dicing line(s); an inter-test pad interconnect(s) provided in parallel with the test pads in the area(s) of the semiconductor wafer disposed between the regions to become semiconductor chips; the inter-test pad interconnect(s) being connected to the test pads; and an inter-chip interconnect that interconnects at least two of the regions designed to become semiconductor chips; the inter-test pad interconnect being electrically connected to the inter-chip interconnect.

Abstract: To provide a rational frequency dividing circuit wherein the variations in cycle times of frequency divided clock signals are small, there are many occasions in which the minimum cycle time of frequency divided clock signals and test costs are small. A clock signal frequency dividing circuit, the frequency division ratio of which is specified as N/M where are both N and M are integers, includes an output clock selecting circuit (200) that selects one of three situations: an input clock signal is outputted as it is, the input clock signal is inverted and outputted and the input clock signal is not outputted; and a clock selection control circuit (100) that generates a control signal for controlling the foregoing selection of the output clock selecting circuit. The clock selection control circuit controls the foregoing selection of the output clock selecting circuit at every cycle of the input clock signal.

Abstract: A semiconductor device (1) includes a semiconductor wafer (11) on which a plurality of semiconductor chip forming regions (1A) is formed, a circuit section (12) which is provided within each of the semiconductor chip forming regions (1A) of the semiconductor wafer (11), a control circuit section (14), provided within each of the semiconductor chip forming regions (1A) and connected to the circuit section (12), that controls electric power supplied to the circuit section (12), a power supply line (18) connected to the plurality of control circuit section (14), and a reference power line (17) connected to the plurality of control circuit section (14). In each of the control circuit sections (14), a voltage of electric power supplied from the power supply line (18) is controlled on the basis of a reference voltage from the reference power line (17).

Abstract: A light receiving circuit (114) includes a light inputting circuit (113) which converts one-system optical signal to be outputted from an optical transmission path (101) to an electrical signal and inverts a potential of the electrical signal each time the optical signal is detected, and a buffer circuit (110) which amplifies the electrical signal converted by the light inputting circuit and outputs the same. According to such configuration, since one-system optical signal may be inputted to the light receiving circuit, a system circuit configuration can be avoided to be complicated.

Abstract: Small-scale measuring circuits (111-1qum) are arranged in m columns×q rows. The small-scale measuring circuits of each row (111-11m, 121-12m, 1q1-1qm) are connected in series. The respective rows are connected in parallel. Supplying reference signals B having different parameter values to the small-scale measuring circuits (111-11m, . . . ) connected in series makes it possible to improve the measurement range or measurement resolution. Supplying reference signals B having the same parameter to the respective rows can reduce a noise component depending on the transistor size. According to this invention, using a plurality of small-scale measuring circuits in accordance with required measurement performance concerning a measurement range, resolution, noise reduction, or the like can implement the desired performance while minimizing the area of each measuring circuit.

Abstract: Provided is a modulation device including a signal selection circuit selecting two carrier signals from a plurality of carrier signals having the same frequency and the same phase difference according to a defined control signal and outputting the selected carrier signals, and a phase interpolator adjusting the phase in smaller units than the phase difference between the plurality of carrier signals according to the control signal and modulating the frequency or the phase of the carrier signal into a baseband signal based on the carrier signals selected by the signal selection circuit to generate a carrier wave signal.

Abstract: An interpolated signal generating circuit (101) generates interpolated signals (SIG1-SIGN) of two consecutive discrete signals (SIG). N measuring circuits (501) measure interpolated signals. Since the interpolated signals are measurement targets, N-times oversampling measurement can also be performed for the discrete signals. With the oversampling measurement, the frequency spectra of the signal components of the discrete signals are maintained, and only the frequency spectrum of a noise component due to a quantization error increases to a high-frequency band, thereby reducing a noise component per unit frequency. Therefore, removing a high-frequency component from a measurement result from each measuring circuit using a low-pass filter (502) makes it possible to improve the signal-to-noise ratio of the measurement result as compared with a case in which no oversampling is performed.

Abstract: Disclosed is a semiconductor integrated circuit including a first storage circuit and a second storage circuit that respectively store logic levels of an input to the delay circuit and an output of the delay circuit when a logic level of a clock line is changed, and a determination circuit that determines whether or not the results of the first storage circuit and the second storage circuit coincide or not. Even if a transistor or a wiring that constitutes the semiconductor integrated circuit has been degraded due to secular change or the like, a possibility of an anomaly or a failure in one of the operation circuits caused by the degradation can be predicted before the anomaly or the failure occurs.

Abstract: A clock signal dividing circuit in which a dividing ratio is regulated by N/M (M and N are positive integers and satisfy M>N) includes: a variable delay circuit which gives a predetermined delay amount based on a control value to an input clock signal CKI to output an output clock signal CKO; and a variable delay control circuit which cumulatively adds values obtained by subtracting N from M every cycle of the input clock signal CKI, when the addition result is N or more, performs a calculation which subtracts N from the addition result to obtain a calculation result K, and calculates, to a maximum delay amount in the variable delay circuit corresponding to one cycle of the input clock signal CKI, a control value corresponding to a delay amount of K/N of the maximum delay amount to give the control value to the variable delay circuit.

Abstract: A control signal input circuit for supplying control signals to a plurality of controlled circuits comprises N pieces of control signal preservation/output circuits provided one by one corresponding to plural-bit signals for delivering input data as it is when a trigger signal is at a first level, and holding previously delivered output data when the trigger signal is at a second level, and a controlled circuit selector circuit for setting the trigger signal for S pieces of the control signal preservation/output circuits to the first level, and setting the trigger signal for the rest of the control signal preservation/output circuits to the second level.

Abstract: A semiconductor test apparatus, semiconductor device, and test method are provided that enable the realization of a high-speed delay test. Semiconductor test apparatuses (1a-1c) include: flip-flops (11) each provided with first input terminal SI, second input terminal D, mode terminal SE that accepts a mode signal indicating either a first mode or a second mode, clock terminal CK that accepts a clock signal, and output terminal Q, the flip-flops (11) selecting first input terminal SI when the mode signal indicates the first mode, selecting second input terminal D when the mode signal indicates the second mode, and holding information being received by the input terminal that was selected based on the mode signal in synchronization with the clock signal and supplying as output from output terminal Q; and hold unit 12 that holds a set value and that provides the set value to first input terminal SI.

Abstract: Current reading means detects an output current of a current source whose output current varies with a variation in temperature and outputs a value proportional to the output current. The temperature of the current source corresponding to the output value of the current reading means which is proportional to the output current of the current source is measured, and a parameter for converting the output value to temperature information is determined from the output value of the current reading means and the measured value of the temperature of the current source corresponding to the output value. The output value of the current reading means is converted to the temperature information using the determined parameter.

Abstract: A phase difference measuring device according to this invention has an object of shortening the measuring time, and includes a plurality of phase difference measuring circuits (104, 105, 106) formed in a row, and phase difference conversion circuits (101, 102, 103) each connected between adjacent phase difference measuring circuits. The phase difference measuring circuit receives first and second signals, respectively gives the first and second signals first and second delay amounts cumulatively a plurality of number of times, and, whenever giving the delay amounts, compares the phases of the first and second signals given the delay amounts, thereby determining which one of the phases leads the other.