Abstract: An exposure apparatus comprises an exposure head, a memory and at least one processor. The exposure head includes light-emitting elements, and a rod lens array. A photosensitive body is rotationally driven. The light-emitting elements are arranged in a direction intersecting a direction of rotation of the photosensitive body. The rod lens array forms an image of light on the photosensitive body. The light is outputted from any of the light-emitting elements based on image data, passes through the rod lens array and reaches the photosensitive body. The memory stores correction data for correcting a streak image. The at least one processor corrects the image data based on the correction data read out from the memory.

Abstract: An image forming apparatus includes: an exposure head including a first light emitting chip, a second light emitting chip, a first lens fixed to a housing at a position facing the first light emitting chip, and configured to form an image of light emitted from a plurality of light emitting portions included in the first light emitting chip on a photoreceptor, and a second lens provided separately from the first lens, fixed to the housing at a position facing the second light emitting chip, and configured to form an image of light emitted from a plurality of light emitting portions included in the second light emitting chip on the photoreceptor; and a controller capable of controlling application of a voltage to each of a plurality of electrodes of the first light emitting chip and a plurality of electrodes of the second light emitting chip so as to form one pixel.

Abstract: The plurality of surface light emitting element array chips in the first row and the plurality of surface light emitting element array chips in the second row are arranged in a staggered manner along the main scanning direction, and a space between the plurality of surface light emitting element array chips in the first row and the plurality of surface light emitting element array chips in the second row is set so as not to be an integral multiple of an image resolution pitch in the sub-scanning direction.

Abstract: An image forming apparatus includes: an exposure head including a first light emitting chip, a second light emitting chip, a first lens fixed to a housing at a position facing the first light emitting chip, and configured to form an image of light emitted from a plurality of light emitting portions included in the first light emitting chip on a photoreceptor, and a second lens provided separately from the first lens, fixed to the housing at a position facing the second light emitting chip, and configured to form an image of light emitted from a plurality of light emitting portions included in the second light emitting chip on the photoreceptor; and a controller capable of controlling application of a voltage to each of a plurality of electrodes of the first light emitting chip and a plurality of electrodes of the second light emitting chip so as to form one pixel.

Abstract: A second electrode is laminated on a light emitting layer on an opposite side across the light emitting layer from a first electrode laminated on a silicon substrate. The second electrode is capable of transmitting light. A photoconductor drum is exposed to light by using light transmitted through the second electrode.

Abstract: An exposure head includes a plurality of light emitting element array chips. A first distance from a first side which is one of two long sides of each of the plurality of light emitting element array chips to one long side of a sealing area which is parallel to and proximate to the first side is shorter than a second distance from a second side which is another one of the two long sides to another long side of the sealing area which is parallel to and proximate to the second side, and a third distance from the first side to one long side of a light emitting area which is parallel to and proximate to the first side is shorter than a fourth distance from the second side to another long side of the light emitting area which is parallel to and proximate to the second side.

Abstract: Provided is a semiconductor light emitting device including nodes each connected to a gate of a shift thyristor and a gate of a light emitting thyristor and transfer diodes arranged to connect the nodes to each other. The shift thyristor has a laminated structure including semiconductor layers, and is provided to a mesa formed separately from the light emitting thyristors and the transfer diodes. The shift thyristor includes a first metal layer continuously provided to straddle the mesa, and a second metal layer, which is arranged in an upper layer than the first metal layer, and includes a first part and a second part arranged to be opposed to the first part across the mesa. The first part and the second part of the second metal layer are each electrically connected to the first metal layer in a region that does not overlap the mesa in a plan view.

Abstract: A semiconductor light-emitting device includes a semiconductor stacked structure including a light-emitting layer, a metal electrode provided over the semiconductor stacked structure and having an opening for externally emitting a light emitted from the light-emitting layer, and a transparent electrode provided over the semiconductor stacked structure inside the opening and over the metal electrode.

Abstract: Provided is a semiconductor light-emitting device including a plurality of nodes and a plurality of transfer diodes connecting the nodes, and gates of a shift thyristor and a light-emitting thyristor are connected to each of the nodes. Each of the transfer diodes includes a stacked structure including a first semiconductor layer of a first conductivity type provided over a semiconductor substrate, a second semiconductor layer of a second conductivity type, which is different from the first conductivity type, provided over the first semiconductor layer, a third semiconductor layer of the first conductivity type provided over the second semiconductor layer, a fourth semiconductor layer of the second conductivity type provided over the third semiconductor layer, and a fifth semiconductor layer of the first conductivity type provided over the fourth semiconductor layer, and a diode is formed by a p-n junction between the fourth and fifth semiconductor layers.

Abstract: Provided is a semiconductor light emitting device including nodes each connected to a gate of a shift thyristor and a gate of a light emitting thyristor and transfer diodes arranged to connect the nodes to each other. The shift thyristor has a laminated structure including semiconductor layers, and is provided to a mesa formed separately from the light emitting thyristors and the transfer diodes. The shift thyristor includes a first metal layer continuously provided to straddle the mesa, and a second metal layer, which is arranged in an upper layer than the first metal layer, and includes a first part and a second part arranged to be opposed to the first part across the mesa. The first part and the second part of the second metal layer are each electrically connected to the first metal layer in a region that does not overlap the mesa in a plan view.

Abstract: A semiconductor light-emitting device includes a semiconductor stacked structure including a light-emitting layer, a metal electrode provided over the semiconductor stacked structure and having an opening for externally emitting a light emitted from the light-emitting layer, and a transparent electrode provided over the semiconductor stacked structure inside the opening and over the metal electrode.

Abstract: A semiconductor light-emitting device includes a shift thyristor, a light-emitting thyristor, a transfer diode having one node connected to gates of the shift thyristor and the light-emitting thyristor, and a stacked structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, a third semiconductor layer of the first conductivity type, and a fourth semiconductor layer of the second conductivity type. The stacked structure includes first and second mesas, the transfer diode is provided in the first mesa, and at least one of the shift thyristor and the light-emitting thyristor is provided in the second mesa. The device further includes a resistor connected to the other node of the transfer diode and including at least part of the third semiconductor layer and first and second electrodes on the third semiconductor layer.

Abstract: Provided is a semiconductor light-emitting device including a plurality of nodes and a plurality of transfer diodes connecting the nodes, and gates of a shift thyristor and a light-emitting thyristor are connected to each of the nodes. Each of the transfer diodes includes a stacked structure including a first semiconductor layer of a first conductivity type provided over a semiconductor substrate, a second semiconductor layer of a second conductivity type, which is different from the first conductivity type, provided over the first semiconductor layer, a third semiconductor layer of the first conductivity type provided over the second semiconductor layer, a fourth semiconductor layer of the second conductivity type provided over the third semiconductor layer, and a fifth semiconductor layer of the first conductivity type provided over the fourth semiconductor layer, and a diode is formed by a p-n junction between the fourth and fifth semiconductor layers.

Abstract: In a light emitting element array in which a plurality of components having multiple light emitting thyristors connected to a single shift thyristor are arranged in a plurality of lines, the density of the light emitting thyristor is increased without reduction in the amount of light emission of each of the light emitting thyristors. In the light emitting element array in which multiple light emitting thyristors are formed on a single island structure and the multiple light emitting thyristors are connected to a single shift thyristor, a first element-isolating groove that element-isolates the multiple light emitting thyristors from each other inside the single island structure is formed shallower than a second element-isolating groove that element-isolates the island structure.

Abstract: A light-emitting element includes, on a substrate, a shift thyristor and a light-emitting thyristor. The shift thyristor and the light-emitting thyristor each include a semiconductor multilayer structure consisting of first to fourth semiconductor layers stacked with alternating conductivity types. The shift thyristor includes a current diffusion layer in contact with the semiconductor multilayer structure, and a first metal electrode in this order, or the first metal electrode which is in contact with the semiconductor multilayer structure on the semiconductor multilayer structure; and wherein in the shift thyristor, a region in which a region in which the current diffusion layer or the first metal electrode and the semiconductor multilayer structure come into contact with each other is projected in a stacked direction of the semiconductor multilayer structure is included in a region in which the first metal electrode is projected in the stacked direction.

Abstract: A surface emitting laser having a wide wavelength tunable band is provided. A surface emitting laser includes a first reflecting mirror (102); a second reflecting mirror (116); and an active layer (104) arranged between the first reflecting mirror (102) and the second reflecting mirror (116), a gap being formed between the second reflecting mirror (116) and the active layer (104), an oscillation wavelength being tunable. The second reflecting mirror (116) includes a beam (108) comprising a single-crystal semiconductor, and a dielectric multilayer film (110) supported by the beam (108), and the dielectric multilayer film (110) is arranged in an opening (118) formed in the beam (108).

Abstract: In a light emitting element array in which a plurality of components having multiple light emitting thyristors connected to a single shift thyristor are arranged in a plurality of lines, the density of the light emitting thyristor is increased without reduction in the amount of light emission of each of the light emitting thyristors. In the light emitting element array in which multiple light emitting thyristors are formed on a single island structure and the multiple light emitting thyristors are connected to a single shift thyristor, a first element-isolating groove that element-isolates the multiple light emitting thyristors from each other inside the single island structure is formed shallower than a second element-isolating groove that element-isolates the island structure.

Abstract: In a light-emitting element array using light emitting thyristors, a light emitting output of each light emitting thyristor can be increased and a variation in the light emitting output can be suppressed. On a substrate, a thyristor having a mesa structure including a cathode layer, a gate layer, a gate layer, and an anode layer is formed. A contact layer is formed on the anode layer. A current constriction region is formed by a region in which the anode layer is in contact with the contact layer. A minimum distance from the current constriction region to a side surface of the mesa structure is greater than or equal to 4 ?m.

Abstract: A surface emission laser includes a first beam, a second reflector disposed in an opening portion formed in the first beam, and a second beam disposed in the opening portion, and extending in a widthwise direction of the first beam to connect the second reflector and the first beam, wherein a length, in a longitudinal direction of the first beam, of the second beam is smaller than a length, in the longitudinal direction of the first beam, of the second reflector.

Abstract: A light-emitting element includes, on a substrate, a shift thyristor and a light-emitting thyristor. The shift thyristor and the light-emitting thyristor each include a semiconductor multilayer structure consisting of first to fourth semiconductor layers stacked with alternating conductivity types. The shift thyristor includes a current diffusion layer in contact with the semiconductor multilayer structure, and a first metal electrode in this order, or the first metal electrode which is in contact with the semiconductor multilayer structure on the semiconductor multilayer structure; and wherein in the shift thyristor, a region in which a region in which the current diffusion layer or the first metal electrode and the semiconductor multilayer structure come into contact with each other is projected in a stacked direction of the semiconductor multilayer structure is included in a region in which the first metal electrode is projected in the stacked direction.