Patents by Inventor Koichiro Tanaka

Koichiro Tanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230014316
    Abstract: A control device for adjusting an amount of fuel to be supplied to a gas turbine based on a rotational speed of the gas turbine, such that a frequency of electric power output by a power generator that generates electric power using the gas turbine is within a given range, includes a load value acquisition unit configured to acquire a load value that is a value of a load applied to the power generator after cutoff of a part of the load applied to the power generator when the part of the load applied to the power generator is cut off, an arithmetic unit configured to calculate an adjusted value that is a value of the load different from the load value by carrying out an arithmetic operation on the load value and a bias, and a command unit configured to adjust the amount of fuel by outputting a first signal for causing the power generator to output electric power corresponding to the adjusted value.
    Type: Application
    Filed: September 27, 2022
    Publication date: January 19, 2023
    Inventors: Akihiko SAITO, Hidekazu YAMASHITA, Jun SASAHARA, Koichiro YANO, Yosuke KITAUCHI, Mizuhiko TANAKA, Masahiro YOSHIDA
  • Publication number: 20220357691
    Abstract: A drum member includes: a substantially cylindrical drum body having a hollow part extending in an axial direction; a sheet member wound on the drum body; an adjusting mechanism configured to adjust tension in the sheet member, the adjusting mechanism including a moving member that holds an end of the sheet member in a circumferential direction and moves in a depth direction of the hollow part, and a fixing member that fixes the moving member to the drum body; and one or more positioning members that position the moving member such that the moving member does not move in the circumferential direction of the drum body when the moving member is fixed with the fixing member.
    Type: Application
    Filed: July 22, 2022
    Publication date: November 10, 2022
    Applicant: FUJIFILM Business Innovation Corp.
    Inventors: Kazuki KISHI, Koichiro YUASA, Kazuyoshi HAGIWARA, Kei TANAKA, Tomoaki YOSHIOKA, Toshiaki BABA, Yoko MIYAMOTO, Hirotaka TANAKA
  • Patent number: 11493872
    Abstract: A static elimination device includes: a first static elimination member that makes contact with a medium that is transported; a second static elimination member arranged such that the medium is inserted between the first static elimination member and the second static elimination member; and a power source that applies a voltage to at least one of the first static elimination member or the second static elimination member, in which at least one of the first static elimination member and the second static elimination member has an elastic body.
    Type: Grant
    Filed: July 14, 2020
    Date of Patent: November 8, 2022
    Assignee: FUJIFILM Business Innovation Corp.
    Inventors: Hirotaka Tanaka, Koichiro Yuasa
  • Patent number: 11370900
    Abstract: A rubber composition contains (A) a modified conjugated diene-based polymer, (B) modified silica, and (C) a polymer having crystalline character. A crosslinked product is produced through crosslinking of the rubber composition containing the modified conjugated diene-based polymer (A), the modified silica (B), and the polymer having crystalline character (C). The crosslinked product is used for producing a tire including a tread and a sidewall, wherein at least one of the tread and the sidewall is formed of the crosslinked product.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: June 28, 2022
    Assignee: ENEOS MATERIALS CORPORATION
    Inventors: Koichiro Tani, Naoki Sugiyama, Kunpei Kobayashi, Ryoji Tanaka
  • Patent number: 11259449
    Abstract: Provided is an electromagnetic wave shielding material that can exhibit improved electromagnetic wave shielding property, light-weight property and formability. The present invention relates to an electromagnetic wave shielding material comprising a laminate in which N number of metal foils each having a thickness of 5 to 100 ?m and N+1 number of resin layers each having a thickness of 5 ?m or more are alternately laminated or a laminate in which N+1 number of metal foils each having a thickness of 5 to 100 ?m and N number of resin layers each having a thickness of 5 ?m or more are alternately laminated, N being an integer of 2 or more, wherein thickness of the laminate is from 100 to 500 ?m, and wherein, when a thickness center of the laminate is used as a reference, for all pairs of interfaces at which sequences of the resin layers and the metal foils on both upper and lower sides of the reference correspond to each other, distances from the reference to the interfaces have an error of within ±10%.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: February 22, 2022
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Kazuki Kammuri, Koichiro Tanaka
  • Patent number: 11040518
    Abstract: Provided is a laminated body of at least one metal foil and resin layers, which is suitable for drawing. The laminated body includes at least one metal foil and at least two resin layers. The laminated body has a thickness of 25 to 500 ?m. In the laminated body, both surfaces of each metal foil are closely laminated to the resin layers, and the relationships: 60??Y?150, and 1.4??b/?Y are satisfied, in which ?Y represents a nominal stress (MPa) at a nominal strain of 5% when a tensile test according to JIS K 7127: 1999 is performed on the laminated body, and ?b represents a nominal stress (MPa) at a nominal strain at which the metal foil in the laminated body is broken when a tensile test according to JIS K 7127: 1999 is performed on the laminated body.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: June 22, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Koichiro Tanaka
  • Patent number: 11019759
    Abstract: Provided is an electromagnetic shielding material that has good magnetic field shielding properties against a low-frequency electromagnetic field of 1 MHz or less, lightweight and also excellent formability. The electromagnetic shielding material has a structure in which at least two metal foils are closely laminated via at least one resin layer, wherein at least one resin forming the at least one resin layer has no yield point at 150° C.; wherein all of combinations of the at least two metal foils and the at least one resin layer forming the electromagnetic shielding material satisfy the following equation (A): ?M×dM×dR?3×10?3,??Equation (A): wherein the electromagnetic shielding material satisfies the following equation (B): ? i a = 1 ? ( d Ra + f Ra ) ? j b = 1 ? ( d Mb + f Mb ) ? 0.
    Type: Grant
    Filed: December 1, 2016
    Date of Patent: May 25, 2021
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Koichiro Tanaka
  • Publication number: 20210118916
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Application
    Filed: December 24, 2020
    Publication date: April 22, 2021
    Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
  • Patent number: 10910219
    Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: February 2, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koichiro Tanaka, Hidekazu Miyairi, Aiko Shiga, Akihisa Shimomura, Atsuo Isobe
  • Patent number: 10879272
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: December 29, 2020
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
  • Patent number: 10842058
    Abstract: A metal foil for electromagnetic shielding, comprising: a metal foil base having a thickness of exceeding 4 ?m, an alloy layer having an A element configured of Sn or In and a B element group selected from the group consisting of one or more of Ag, Ni, Fe and Co formed on one or both surfaces of the base, and an underlayer having the B element group formed between the alloy layer and the base, wherein an adhesion amount of the A element is 10 to 300 ?mol/dm2, and a total adhesion amount of the B element group is 40 to 900 ?mol/dm2.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: November 17, 2020
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Koichiro Tanaka
  • Publication number: 20200315073
    Abstract: Provided is an electromagnetic shielding material that has good magnetic field shielding properties against a low-frequency electromagnetic field of 1 MHz or less, lightweight and also excellent formability. The electromagnetic shielding material has a structure in which at least two metal foils are closely laminated via at least one resin layer, wherein at least one resin forming the at least one resin layer has no yield point at 150 ° C.; wherein all of combinations of the at least two metal foils and the at least one resin layer forming the electromagnetic shielding material satisfy the following equation (A): ?M×dM×dR?3×10?3, ??Equation (A): wherein the electromagnetic shielding material satisfies the following equation (B): ? a = 1 i ? ( d Ra + f Ra ) ? b = 1 j ? ( d Mb + f Mb ) ? 0.
    Type: Application
    Filed: December 1, 2016
    Publication date: October 1, 2020
    Inventor: Koichiro Tanaka
  • Publication number: 20200135770
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Application
    Filed: December 23, 2019
    Publication date: April 30, 2020
    Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
  • Patent number: 10609849
    Abstract: Provided is an electromagnetic wave shielding material including a multilayer structure in which at least one metal foil and at least two resin layers are closely laminated, wherein both surfaces of each metal foil are closely laminated to the resin layers; wherein each metal foil satisfies the following relationship with each of the two resin layers adjacent to the metal foil: 0.02?VM/VM??1.2, in which: VM is a volume fraction of the metal foil relative to a total volume of the metal foil and the resin layer; VM? is (?R??R?)/(?M+?R??R?); ?M is a true stress (MPa) of the metal foil at breakage when a tensile stress is applied to the metal foil; ?R is a true stress (MPa) of the resin layer at breakage when a tensile stress is applied to the resin layer; and ?R? is a true stress (MPa) of the resin layer when a logarithmic strain same as a logarithmic strain at breakage of the metal foil is applied to the resin layer.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: March 31, 2020
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Koichiro Tanaka
  • Patent number: 10515983
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: December 24, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Atsuo Isobe, Shunpei Yamazaki, Koji Dairiki, Hiroshi Shibata, Chiho Kokubo, Tatsuya Arao, Masahiko Hayakawa, Hidekazu Miyairi, Akihisa Shimomura, Koichiro Tanaka, Mai Akiba
  • Patent number: 10488671
    Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.
    Type: Grant
    Filed: March 5, 2018
    Date of Patent: November 26, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koichiro Tanaka, Tomoaki Moriwaka
  • Publication number: 20190348286
    Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.
    Type: Application
    Filed: July 26, 2019
    Publication date: November 14, 2019
    Inventors: Koichiro TANAKA, Hidekazu MIYAIRI, Aiko SHIGA, Akihisa SHIMOMURA, Atsuo ISOBE
  • Publication number: 20190341404
    Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
    Type: Application
    Filed: July 18, 2019
    Publication date: November 7, 2019
    Inventors: Atsuo ISOBE, Shunpei YAMAZAKI, Koji DAIRIKI, Hiroshi SHIBATA, Chiho KOKUBO, Tatsuya ARAO, Masahiko HAYAKAWA, Hidekazu MIYAIRI, Akihisa SHIMOMURA, Koichiro TANAKA, Mai AKIBA
  • Patent number: 10442159
    Abstract: Provided is an electromagnetic shielding material having improved electromagnetic shielding properties, light weight properties and formability. The present invention relates to an electromagnetic shielding material having a structure in which at least three metal foils are laminated via insulating layers, wherein all of combinations of the metal foils and the insulating layers making up the electromagnetic shielding material satisfy the equation: ?M×dM×dR?3×10?3, in which: the symbol ?M represents conductivity of each metal foil at 20° C. (S/m); the symbol dM represents the thickness of each metal foil (m); and the symbol dR represents the thickness of each insulating layer (m).
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: October 15, 2019
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Koichiro Tanaka, Kenji Sato
  • Patent number: 10369658
    Abstract: The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: August 6, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Koichiro Tanaka, Hirotada Oishi