Abstract: A transfer member includes: an inner layer; and an outer layer that is adhered to the inner layer and has a hardness lower than a hardness of the inner layer.

Abstract: An olefin production device for producing an olefin from a raw material gas containing methane and oxygen includes a reactor containing: a first catalyst; and a second catalyst disposed downstream of the first catalyst in a flow direction of the raw material gas. The first catalyst is a catalyst in which a zirconium salt or carbonate of an alkali metal, an oxide of an alkaline earth metal, an oxide of one kind of lanthanoid element, a composite oxide containing a lanthanoid element, or a combination thereof is supported on a support. The second catalyst is a catalyst containing a tungsten oxide, phosphate, or carbonate of an alkali metal.

Abstract: An estimation method includes: receiving, by first and second antennas, radio waves including reflected radio waves that are radio waves transmitted from a transmitting antenna and reflected by a target; calculating a phase difference between first received radio waves that are radio waves received by the first antenna in the receiving and second received radio waves that are radio waves received by the second antenna in the receiving; calculating an amount of correction based on the amplitude of the first received radio waves and the amplitude of the second received radio waves, adding the calculated amount of correction to the phase difference calculated in the calculating of the phase difference, and obtaining a corrected phase difference resulting from correction of the phase difference; and estimating, based on the corrected phase difference and the distance between the first and second antennas, a direction in which the target is located.

Abstract: Provided is an electromagnetic wave shielding material that can exhibit improved electromagnetic wave shielding property, light-weight property and formability. The present invention relates to an electromagnetic wave shielding material comprising a laminate in which N number of metal foils each having a thickness of 5 to 100 ?m and N+1 number of resin layers each having a thickness of 5 ?m or more are alternately laminated or a laminate in which N+1 number of metal foils each having a thickness of 5 to 100 ?m and N number of resin layers each having a thickness of 5 ?m or more are alternately laminated, N being an integer of 2 or more, wherein thickness of the laminate is from 100 to 500 ?m, and wherein, when a thickness center of the laminate is used as a reference, for all pairs of interfaces at which sequences of the resin layers and the metal foils on both upper and lower sides of the reference correspond to each other, distances from the reference to the interfaces have an error of within ±10%.

Abstract: Provided is a laminated body of at least one metal foil and resin layers, which is suitable for drawing. The laminated body includes at least one metal foil and at least two resin layers. The laminated body has a thickness of 25 to 500 ?m. In the laminated body, both surfaces of each metal foil are closely laminated to the resin layers, and the relationships: 60??Y?150, and 1.4??b/?Y are satisfied, in which ?Y represents a nominal stress (MPa) at a nominal strain of 5% when a tensile test according to JIS K 7127: 1999 is performed on the laminated body, and ?b represents a nominal stress (MPa) at a nominal strain at which the metal foil in the laminated body is broken when a tensile test according to JIS K 7127: 1999 is performed on the laminated body.

Abstract: Provided is an electromagnetic shielding material that has good magnetic field shielding properties against a low-frequency electromagnetic field of 1 MHz or less, lightweight and also excellent formability. The electromagnetic shielding material has a structure in which at least two metal foils are closely laminated via at least one resin layer, wherein at least one resin forming the at least one resin layer has no yield point at 150° C.; wherein all of combinations of the at least two metal foils and the at least one resin layer forming the electromagnetic shielding material satisfy the following equation (A): ?M×dM×dR?3×10?3,??Equation (A): wherein the electromagnetic shielding material satisfies the following equation (B): ? i a = 1 ? ( d Ra + f Ra ) ? j b = 1 ? ( d Mb + f Mb ) ? 0.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formulation region of a TFT, thereby preventing grain boundaries rom lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: A metal foil for electromagnetic shielding, comprising: a metal foil base having a thickness of exceeding 4 ?m, an alloy layer having an A element configured of Sn or In and a B element group selected from the group consisting of one or more of Ag, Ni, Fe and Co formed on one or both surfaces of the base, and an underlayer having the B element group formed between the alloy layer and the base, wherein an adhesion amount of the A element is 10 to 300 ?mol/dm2, and a total adhesion amount of the B element group is 40 to 900 ?mol/dm2.

Abstract: Provided is an electromagnetic shielding material that has good magnetic field shielding properties against a low-frequency electromagnetic field of 1 MHz or less, lightweight and also excellent formability. The electromagnetic shielding material has a structure in which at least two metal foils are closely laminated via at least one resin layer, wherein at least one resin forming the at least one resin layer has no yield point at 150 ° C.; wherein all of combinations of the at least two metal foils and the at least one resin layer forming the electromagnetic shielding material satisfy the following equation (A): ?M×dM×dR?3×10?3, ??Equation (A): wherein the electromagnetic shielding material satisfies the following equation (B): ? a = 1 i ? ( d Ra + f Ra ) ? b = 1 j ? ( d Mb + f Mb ) ? 0.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: Provided is an electromagnetic wave shielding material including a multilayer structure in which at least one metal foil and at least two resin layers are closely laminated, wherein both surfaces of each metal foil are closely laminated to the resin layers; wherein each metal foil satisfies the following relationship with each of the two resin layers adjacent to the metal foil: 0.02?VM/VM??1.2, in which: VM is a volume fraction of the metal foil relative to a total volume of the metal foil and the resin layer; VM? is (?R??R?)/(?M+?R??R?); ?M is a true stress (MPa) of the metal foil at breakage when a tensile stress is applied to the metal foil; ?R is a true stress (MPa) of the resin layer at breakage when a tensile stress is applied to the resin layer; and ?R? is a true stress (MPa) of the resin layer when a logarithmic strain same as a logarithmic strain at breakage of the metal foil is applied to the resin layer.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: If an optical path length of an optical system is reduced and a length of a laser light on an irradiation surface is increased, there occurs curvature of field which is a phenomenon that a convergent position deviates depending on an incident angle or incident position of a laser light with respect to a lens. To avoid this phenomenon, an optical element having a negative power such as a concave lens or a concave cylindrical lens is inserted to regulate the optical path length of the laser light and a convergent position is made coincident with a irradiation surface to form an image on the irradiation surface.

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: Provided is an electromagnetic shielding material having improved electromagnetic shielding properties, light weight properties and formability. The present invention relates to an electromagnetic shielding material having a structure in which at least three metal foils are laminated via insulating layers, wherein all of combinations of the metal foils and the insulating layers making up the electromagnetic shielding material satisfy the equation: ?M×dM×dR?3×10?3, in which: the symbol ?M represents conductivity of each metal foil at 20° C. (S/m); the symbol dM represents the thickness of each metal foil (m); and the symbol dR represents the thickness of each insulating layer (m).

Abstract: The present invention is to provide a laser irradiation technique for irradiating the irradiation surface with the laser beam having homogeneous intensity distribution using a cylindrical lens array without being affected by the intensity distribution of the original beam. A laser beam emitted from a laser oscillator is divided by two kinds of cylindrical lens arrays into a plurality of beams, which are two kinds of linear laser beams with their energy intensity distribution inverted each other, and the two kinds of linear laser beams are superposed in a minor-axis direction. This can form the linear laser beam having homogeneous intensity distribution on the irradiation surface.

Abstract: The present invention is characterized in that by laser beam being slantly incident to the convex lens, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the present invention has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.