Abstract: A calibration device includes a continuous wave signal generator that generates a continuous wave signal having a predetermined amplitude, a quadrature modulator that amplifies the continuous wave signal using a variable gain and performs quadrature modulation of the amplified continuous wave signal to generate a radio frequency signal, an envelope detector that detects an envelope of the radio frequency signal, a gain adjuster that adjusts the variable gain, based on power of the detected envelope, a correction value searcher that searches for a correction value that provides a minimum value of a fluctuation amount of an amplitude of the envelope, and a corrector that adds the correction value obtained through the search by the correction value searcher to the continuous wave signal and outputs the continuous wave signal after the addition to the quadrature modulator.

Abstract: A receiving device that receives a signal in a receiving antenna. The receiving device includes a gain controller that adjusts a gain in the receiving device in response to information related to power of the signal, and a signal detector that determines whether, within a predetermined period after the information related to the power of the signal exceeds a first threshold value, the information related to the power of the signal exceeds a second threshold value which is larger than the first threshold value. The gain controller adjusts a search range of the gain in the receiving device based on a determination result of the signal detector with respect to the information related to the power of the signal.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: A calibration device includes a continuous wave signal generator that generates a continuous wave signal having a predetermined amplitude, a quadrature modulator that amplifies the continuous wave signal using a variable gain and performs quadrature modulation of the amplified continuous wave signal to generate a radio frequency signal, an envelope detector that detects an envelope of the radio frequency signal, a gain adjuster that adjusts the variable gain, based on power of the detected envelope, a correction value searcher that searches for a correction value that provides a minimum value of a fluctuation amount of an amplitude of the envelope, and a corrector that adds the correction value obtained through the search by the correction value searcher to the continuous wave signal and outputs the continuous wave signal after the addition to the quadrature modulator.

Abstract: A receiving device that receives a signal in a receiving antenna. The receiving device includes a gain controller that adjusts a gain in the receiving device in response to information related to power of the signal, and a signal detector that determines whether, within a predetermined period after the information related to the power of the signal exceeds a first threshold value, the information related to the power of the signal exceeds a second threshold value which is larger than the first threshold value. The gain controller adjusts a search range of the gain in the receiving device based on a determination result of the signal detector with respect to the information related to the power of the signal.

Abstract: A carrier leakage correction device includes a non-modulation signal generator that outputs a first non-modulation signal having a first amplitude or a second non-modulation signal having a second amplitude larger than the first amplitude, a quadrature modulator that performs quadrature modulation on the first or second non-modulation signal and converts a first or second quadrature modulation signal into a high-frequency signal, an envelope detector that detects an envelope of the high-frequency signal, a correction value searcher that performs a search for a correction value giving a minimum value of a fluctuation amount of an envelope amplitude of the envelope detected by the envelope detector by changing a candidate for the correction value, and a corrector that adds the correction value obtained through the search of the correction value searcher to the first or second non-modulation signal.

Abstract: An equalization method includes carrying out frequency domain conversion of M received signals into a 2M received vector having 2M elements, carrying out channel estimation and noise/interference estimation based on the 2M vector, calculating a 2M channel vector and a (2M)×(2M) noise/interference matrix, selecting a 2M?1 or less channel vector from the calculated 2M channel vector, selecting a (2M?1)×(2M?1) or less noise/interference matrix from the calculated (2M)×(2M) noise/interference matrix, calculating a 2M?1 or less equalization coefficient vector as equalization coefficients based on the selected 2M?1 channel vector and the selected (2M?1)×(2M?1) noise/interference matrix, selecting a 2M?1 or less received vector from the 2M received vector, and equalizing the selected 2M?1 received vector by using the calculated equalization coefficients.

Abstract: An equalization method includes carrying out frequency domain conversion of M received signals into a 2M received vector having 2M elements, carrying out channel estimation and noise/interference estimation based on the 2M vector, calculating a 2M channel vector and a (2M)×(2M) noise/interference matrix, selecting a 2M?1 or less channel vector from the calculated 2M channel vector, selecting a (2M?1)×(2M?1) or less noise/interference matrix from the calculated (2M)×(2M) noise/interference matrix, calculating a 2M?1 or less equalization coefficient vector as equalization coefficients based on the selected 2M?1 channel vector and the selected (2M?1)×(2M?1) noise/interference matrix, selecting a 2M?1 or less received vector from the 2M received vector, and equalizing the selected 2M?1 received vector by using the calculated. equalization coefficients.

Abstract: A phase rotation correcting method includes receiving a signal modulated by a multi-value modulation method; recognizing a position of a symbol point of the received signal on an IQ plane; performing phase rotation for rotating a phase of the symbol point of the received signal toward an I axis or a Q axis in accordance with the recognized position and calculating, as an amount of phase rotation correction, a value on an axis different from the axis toward which the phase of the symbol point has been rotated by the phase rotation; and correcting phase rotation of the symbol point by using the calculated amount of phase rotation correction.

Abstract: A receiving device that receives a signal in a receiving antenna. The receiving device includes a gain controller that adjusts a gain in the receiving device in response to information related to power of the signal, and a signal detector that determines whether, within a predetermined period after the information related to the power of the signal exceeds a first threshold value, the information related to the power of the signal exceeds a second threshold value which is larger than the first threshold value. The gain controller adjusts a search range of the gain in the receiving device based on a determination result of the signal detector with respect to the information related to the power of the signal.

Abstract: In order to realize a semiconductor device of enhanced TFT characteristics, a semiconductor thin film is selectively irradiated with a laser beam at the step of crystallizing the semiconductor thin film by the irradiation with the laser beam. By way of example, only driver regions (103 in FIG. 1) are irradiated with the laser beam in a method of fabricating a display device of active matrix type. Thus, it is permitted to obtain the display device (such as liquid crystal display device or EL display device) of high reliability as comprises the driver regions (103) made of crystalline semiconductor films, and a pixel region (102) made of an amorphous semiconductor film.

Abstract: A wireless communication device includes a digital modulation signal generator that generates digital modulation signals, a DAC that converts digital output of the digital modulation signal generator into analog signals, a modulator that generates amplified quadrature modulation signals by exerting quadrature modulation and amplification on the analog signals, an antenna that radiates the amplified quadrature modulation signals, a power detector that outputs power detected signals obtained from power detection of the amplified quadrature modulation signals, a controller that adjusts gain of the modulator by using the power detected signals and a desired power value, a thermometer that measures ambient temperatures at a plurality of burst transmission periods, and a high-power prevention circuit that readjusts the gain of the modulator for a present burst transmission period.

Abstract: Provided is a copper foil for a printed wiring board, the copper foil being suitable for achieving finer pitch, favorable in terms of manufacturing cost, and excellent both in etching ability and adhesion to an insulating substrate. The copper foil for a printed wiring board comprises a copper foil base material and a covering layer for covering at least a portion of a surface of the copper foil base material, wherein the covering layer is formed by an nickel-vanadium alloy layer containing nickel and vanadium, and a chromium layer, laminated in this order from the surface of the copper foil base material; the chromium layer contains chromium in an amount of 15-210 ?g/dm2; the nickel-vanadium alloy layer contains nickel and vanadium in a combined covering amount of 20-600 ?g/dm2; and the nickel-vanadium alloy layer contains vanadium in an amount of 3-70 wt %.

Abstract: A receiving apparatus receives a signal via a receiving antenna and quantizes the signal. The receiving apparatus includes: a gain control section that adjusts gain in the receiving apparatus in accordance with electric power of the quantized signal; an electric power estimating section that estimates electric power of the signal before quantization of the signal received by the receiving antenna on the basis of the electric power of the quantized signal and the gain in the receiving apparatus; and an error detecting section that detects a reception error in a predetermined region of the quantized signal, and the gain control section adjusts a search range for the gain on the basis of a result of detection of the reception error in the predetermined region of the quantized signal and an electric power estimated value of the signal before quantization of the signal received by the receiving antenna.

Abstract: A copper foil composite comprising a copper foil and a resin layer laminated thereon, satisfying an equation 1: (f3×t3)/(f2×t2)=>1 wherein t2 (mm) is a thickness of the copper foil, f2 (MPa) is a stress of the copper foil under tensile strain of 4%, t3 (mm) is a thickness of the resin layer, f3 (MPa) is a stress of the resin layer under tensile strain of 4%, and an equation 2: 1<=33f1/(F×T) wherein f1 (N/mm) is 180° peeling strength between the copper foil and the resin layer, F(MPa) is strength of the copper foil composite under tensile strain of 30%, and T (mm) is a thickness of the copper foil composite, wherein a Sn layer having a thickness of 0.2 to 3.0 ?m is formed on a surface of the copper foil on which the resin layer is not laminated.

Abstract: In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution.

Abstract: A copper foil composite comprising a copper foil and a resin layer laminated thereon, satisfying an equation 1: (f3×t3)/(f2×t2)=>1 wherein t2 (mm) is a thickness of the copper foil, f2 (MPa) is a stress of the copper foil under tensile strain of 4%, t3 (mm) is a thickness of the resin layer, f3 (MPa) is a stress of the resin layer under tensile strain of 4%, and an equation 2:1<=33f1/(F×T) wherein f1 (N/mm) is 180° peeling strength between the copper foil and the resin layer, F(MPa) is strength of the copper foil composite under tensile strain of 30%, and T (mm) is a thickness of the copper foil composite, wherein a Cr oxide layer is formed at an coating amount of 5 to 100 ?g/dm2. is formed on a surface of the copper foil on which the resin layer is not laminated.

Abstract: A display device is manufactured by forming a semiconductor film over a substrate and irradiating the film with laser light. The laser light is generated from an oscillator, passes through an attenuator that includes a filter, and passes through an optical system after passing through the attenuator. A first region of the semiconductor film is irradiated with the laser light passed through the optical system such that one point of the first region of the semiconductor film is irradiated with at least two shots. A second region of the semiconductor film is also irradiated with the laser light passed through the optical system such that one point of the second region of the semiconductor film is irradiated with at least two shots. The first region and the second region have a portion at which they overlap, and the semiconductor film is etched into semiconductor layers for transistors in areas outside the portion.