Abstract: To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first.

Abstract: A method for rapidly performing laser irradiation in a desired position as laser irradiation patterns are switched is proposed. A laser beam emitted from a laser oscillator is entered into a deflector, and a laser beam which has passed through the deflector is entered into a diffractive optical element to be diverged into a plurality of laser beams. Then, a photoresist formed over an insulating film is irradiated with the laser beam which is made to diverge into the plurality of laser beams, and the photoresist irradiated with the laser beam is developed so as to selectively etch the insulating film.

Abstract: A wireless transmission device (100) includes: a wireless transmitting/receiving unit including an antenna (101) that transmits and receives data wirelessly; a Transmission Control Protocol (TCP) buffer (107a) in which the data that is to be transmitted and has been received by the wireless transmitting/receiving unit is temporarily stored; and an antenna control unit (102) that controls the wireless transmitting/receiving unit to improve communication quality of the antenna (101), when it is determined that a data amount stored in the TCP buffer (107a) falls below a threshold value.

Abstract: To provide a manufacturing method of a semiconductor device using an SOI substrate, by which mobility can be improved. A plurality of semiconductor films formed using a plurality of bond substrates (semiconductor substrates) are bonded to one base substrate (support substrate). At least one of the plurality of bond substrates has a crystal plane orientation different from that of the other bond substrates. Accordingly, at least one of the plurality of semiconductor films formed over one base substrate has a crystal plane orientation different from that of the other semiconductor films. The crystal plane orientation of the semiconductor film is determined in accordance with the polarity of a semiconductor element formed using the semiconductor film. For example, an n-channel element in which electrons are majority carriers is formed using a semiconductor film having a face {100}, and a p-channel element in which holes are majority carriers is formed using a semiconductor film having a face {110}.

Abstract: An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.

Abstract: A correlation unit (32) sequentially obtains correlation values between a baseband signal and a reference signal and outputs the obtained reference signal to a section division unit (33). The output of the correlation unit (32) is divided into symbol time periods by the section division unit (33). A section position detection unit (34) detects a largest correlation value in each of sections resulting from the division by the correlation unit (32) and outputs, to a synchronization judgment unit (35), first position information that indicates a relative position of each detected largest correlation value. The synchronization judgment unit (35) detects an arrival of a packet signal and estimates a symbol timing based on the first position information of the sections.

Abstract: The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide.

Abstract: A tube is arranged to be in contact with an insulating layer in an opening formation region, and a treatment agent (etching gas or etchant) is discharged to the insulating layer through the tube. With the discharged treatment agent (etching gas or etchant), the insulating layer is selectively removed to form an opening in the insulating layer. Therefore, the insulating layer provided with the opening is formed over a first conductive layer, and the first conductive layer below the insulating layer is exposed at the bottom of the opening. A second conductive layer is formed in the opening to be in contact with an exposed part of the first conductive layer, so that the first conductive layer and the second conductive layer are electrically connected in the opening provided in the insulating layer.

Abstract: A surface of a single crystal semiconductor substrate is irradiated with ions to form a damaged region, an insulating layer is formed over the surface of the single crystal semiconductor substrate, and a surface of a substrate having an insulating surface is made to be in contact with a surface of the insulating layer to bond the substrate having an insulating surface to the single crystal semiconductor substrate. Then, the single crystal semiconductor substrate is separated at the damaged region by performing heat treatment to form a single crystal semiconductor layer over the substrate having an insulating surface, and the single crystal semiconductor layer is patterned to form a plurality of island-shaped semiconductor layers. One of the island-shaped semiconductor layers is irradiated with a laser beam which is shaped to entirely cover the island-shaped semiconductor layer.

Abstract: A terahertz wave generation device is provided with an ultra-short pulse laser light source (3) for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (F1 to F5) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (15). Projection units (13) of the optical fibers (F1 to F5) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (13), respectively, on terahertz transmission line (A) in the LN crystal (15) with sequential delays. The optical lengths of the transmission paths of the optical fibers (F1 to F5) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units (13).

Abstract: The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention provides a laser irradiation apparatus being able to irradiate the laser beam having homogeneous energy distribution in a direction of its major axis. Furthermore, the present invention provides a method for manufacturing a semiconductor device being able to enhance crystallinity in the surface of the substrate and to manufacture TFT with a high operating characteristic. The beam homogenizer, one of the present invention, is to shape the beam spot on the surface to be irradiated into a rectangular spot having an aspect ratio of 10 or more, preferably 100 or more, and comprises an optical waveguide for homogenizing the energy distribution of the rectangular beam spot in the direction of its major axis.

Abstract: A semiconductor device is fabricated by forming a first crystalline region by irradiating a laser beam to a first region of an amorphous semiconductor film by relatively moving the laser beam with respect to the first region of the amorphous semiconductor film. A second crystalline region is formed by irradiating the laser beam to a second region of the amorphous semiconductor film including a portion of the first crystalline region by relatively moving the laser beam with respect to the second region of the amorphous semiconductor film. The wavelength of the laser beam falls in a range of 370 rim through 650 nm. In general, crystalline performance of the first crystalline region, the second crystalline region, and a region of overlap between the first crystalline region and the second crystalline region are the same.

Abstract: A first wireless communication device (1) performs wireless communication with a second wireless communication device (2) which is connected via a wireless network. More specifically, the first wireless communication device (1) includes a wireless communication unit which transmits and receives a wireless signal, and a transmission rate controlling unit which controls the second wireless communication device (2) so that a transmission rate of a wireless signal, which is transmitted by the second wireless communication device (2) and received by a wireless transmission and reception unit, becomes constant.

Abstract: An object is to provide a display device that can be manufactured with increased use efficiency of a material by a simplified manufacturing process and a manufacturing technique thereof. A light-absorbing layer is formed, an insulating layer is formed over the light-absorbing layer, the light-absorbing layer and the insulating layer are selectively irradiated with laser light, so that an irradiated region of the light-absorbing layer and an irradiated region of the insulating layer are removed, and accordingly an opening is formed in the light-absorbing layer and the insulating layer, and a conductive film is formed in the opening so as to be in contact with the light-absorbing film. The conductive film is formed in the opening so as to be in contact with the exposed light-absorbing layer, so that the light-absorbing layer and the conductive film are electrically connected to each other with the insulating layer interposed therebetween.

Abstract: By laser beam being slantly incident to the diffractive optics, an aberration such as astigmatism or the like is occurred, and the shape of the laser beam is made linear on the irradiation surface or in its neighborhood. Since the device has a very simple configuration, the optical adjustment is easier, and the device becomes compact in size. Furthermore, since the beam is slantly incident with respect to the irradiated body, the return beam can be prevented.

Abstract: A method for rapidly performing laser irradiation in a desired position as laser irradiation patterns are switched is proposed. A laser beam emitted from a laser oscillator is entered into a deflector, and a laser beam which has passed through the deflector is entered into a diffractive optical element to be diverged into a plurality of laser beams. Then, a photoresist formed over an insulating film is irradiated with the laser beam which is made to diverge into the plurality of laser beams, and the photoresist irradiated with the laser beam is developed so as to selectively etch the insulating film.

Abstract: In crystallizing an amorphous silicon film by illuminating it with linear pulse laser beams having a normal-distribution type beam profile or a similar beam profile, the linear pulse laser beams are applied in an overlapped manner. There can be obtained effects similar to those as obtained by a method in which the laser illumination power is gradually increased and then decreased in a step-like manner in plural scans.

Abstract: A radio transmission system is provided comprising vertically polarized antennas and horizontally polarized antennas which form a plurality of transmission paths which perform a radio data transmission, a communication condition measuring unit which detects that at least a part of transmission paths becomes unavailable for use, and a search unit which searches or sets, depending on a detecting result of the detecting unit, another alternative transmission path instead of the part of transmission paths which becomes unavailable for use. The search unit searches the alternative transmission path by using search results of a part or all of transmission paths other than the part of transmission paths which is blocked.

Abstract: There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.

Abstract: The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination device which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.