Abstract: It is an object to achieve continuous crystal growth without optical interference using a compact laser irradiation apparatus. A megahertz laser beam is split and combined to crystallize a semiconductor film. At this point of time, an optical path difference is provided between the split beams to reduce optical interference. The optical path difference is set to have a length equivalent to the pulse width of the megahertz laser beam or more and less than a length equivalent to the pulse repetition interval; thus, optical interference can be suppressed with a very short optical path difference. Therefore, laser beams can be applied continuously and efficiently without energy deterioration.

Abstract: The present invention is to provide a laser irradiation apparatus for forming a laser beam which has a shape required for the annealing and which has homogeneous energy distribution, by providing a slit at an image-formation position of a diffractive optical element, wherein the slit has a slit opening whose length is changeable. The laser irradiation apparatus comprises a laser oscillator, a diffractive optical element, and a slit, wherein the slit has a slit opening whose length in a major-axis direction thereof is changeable, wherein a laser beam is delivered obliquely to a substrate, and wherein the laser beam is a continuous wave solid-state, gas, or metal laser, or a pulsed laser with a repetition frequency of 10 MHz or more.

Abstract: It is an object of the present invention to provide laser irradiation apparatus and method which can decrease the proportion of the microcrystal region in the whole irradiated region and can irradiate a semiconductor film homogeneously with a laser beam. A low-intensity part of a laser beam emitted from a laser oscillator is blocked by a slit, the laser beam is deflected by a mirror, and the beam is shaped into a desired size by using two convex cylindrical lenses. Then, the laser beam is delivered to the irradiation surface.

Abstract: An object is to provide a method for manufacturing a highly-reliable semiconductor device with an improved material use efficiency and with a simplified manufacturing process. The method includes the steps of forming a conductive layer over a substrate, forming a light-transmitting layer over the conductive layer, and selectively removing the conductive layer and the light-transmitting layer by irradiation with a femtosecond laser beam from above the light-transmitting layer. Note that the conductive layer and the light-transmitting layer may be removed so that an end portion of the light-transmitting layer is located on an inner side than an end portion of the conductive layer. Before the irradiation with a femtosecond laser beam, a surface of the light-transmitting layer may be subjected to liquid-repellent treatment.

Abstract: An object is to provide a novel structure of a backlight unit using color-scan backlight drive, which can relieve a color mixture problem. A backlight unit including a plurality of light guide elements is used. The light guide element has a shape extended in the x direction. The light guide element has a shape of rectangular column. Grooves are provided on a bottom surface of the light guide element so as to traverse it in the y direction. Light sources are provided at the ends of the light guide element in the x direction to supply light into the light guide element. Light supplied into the light guide element is reflected by the grooves in the z direction, and emitted to the outside of the light guide element through the top surface. A reflective layer may be provided under the bottom surface of the light guide element.

Abstract: A manufacturing method of a semiconductor device in which a space between semiconductor films transferred to a plurality of places can be made small. Transfer of a semiconductor film from a bond substrate to a base substrate is carried out a plurality of times. In the case where a semiconductor film transferred first and a semiconductor film transferred later are provided adjacently, the latter transfer is carried out using a bond substrate with its end portion partially removed. The width in a perpendicular direction to the bond substrate used for the later transfer, of the region of the bond substrate corresponding to the removed end portion is larger than the thickness of the semiconductor film which is transferred first.

Abstract: A laser beam treatment device capable of solving problem in a conventional technology that any uniform laser anneal cannot be realized since use of a galvano mirror changes the angle of incidence of the laser beam to the substrate and the reflected light from a back side of a transmissive substrate interferes with the reflected light from a surface of a semiconductor film or an interface between the semiconductor film and the substrate. Laser anneal is performed by using the laser beam treatment device comprising a laser, an optical system for shaping the laser beam oscillated from the laser, and a substrate holds to hold a work formed on the transmissive substrate, in which the substrate holder holds a liquid, and the liquid is brought into contact with the surface.

Abstract: A lens sheet is provided which is configured to create, below the lens sheet, a region not irradiated with light when light is incident on the lens sheet from above. A photoelectric conversion element is efficiently irradiated with light incident on the lens sheet. In addition, a high-efficiency photoelectric conversion module is provided. The lens sheet includes a light-transmitting substrate having lens arrays on both sides, and the lens arrays each have lens regions and non-lens regions placed alternately (in stripes), in which an end portion of each lens region on the front side overlaps with an end portion of each lens region on the back side.

Abstract: To provide a substrate which is light and has high reliability and high light extraction efficiency from an organic EL element. To provide a substrate which includes a protective layer in a resin layer, an uneven structure on a light incident surface, and an opening which surrounds the uneven structure and through which the protective layer is exposed. To provide a light-emitting device which includes a resin layer provided with an uneven structure on a light incident surface over a protective layer, and a light-emitting element in the protective layer and a counter substrate which are bonded with a sealant. The protective layer and the resin layer have a property of transmitting visible light. The light-emitting element includes a light-transmitting first electrode over a resin layer, a layer containing a light-transmitting organic compound over the first electrode, and a second electrode over the layer containing a light-transmitting organic compound.

Abstract: An optical element comprises an organic resin and bubbles distributed to have a number density increasing from a first plane of the optical element toward a second plane of the optical element, where a diameter of the bubbles is less than or equal to a wavelength of light which enters the optical element. At least one of the first plane and the second plane may have an uneven structure.

Abstract: The lighting device includes a layer containing a light-emitting organic compound which is provided over a substrate; a first barrier layer covering the layer containing a light-emitting organic compound; a second barrier layer provided over the first barrier layer; a sealant provided between the first barrier layer and the second barrier layer; a resin layer including a desiccant which is surrounded by the first barrier layer, the second barrier layer, and the sealant; and a resin substrate which is provided over the second barrier layer and has a first uneven structure on a surface in contact with the second barrier layer and a second uneven structure on a surface in contact with the air, and the second uneven structure has a larger height difference than the first uneven structure.

Abstract: An object is to provide a deposition method in which an organic material layer which is a material of a common layer is evenly formed over an entire surface of a donor substrate (a first substrate) and can be transferred to an element formation substrate (a second substrate) as transfer layers which are common layers for red (R), green (G), and blue (B) with different thicknesses. An organic material layer over a first absorption layer and a second absorption layer is deposited to a second substrate as a first transfer layer and a second transfer layer by sublimating the organic material layer over the first substrate. The thicknesses of the first and second transfer layers differ in accordance with the ratio of the area of the first absorption layer to the area of the second absorption layer.

Abstract: An effect of interference is eliminated and intensity of a laser beam is homogenized. The beam homogenizer 100 includes reflecting mirrors 103 and 104 which are provided so that reflecting surfaces thereof face each other. The laser beam LB propagates through a space between the reflecting mirrors 103 and 104 while being reflected therebetween, so that intensity distribution of the laser beam LB is homogenized, but the laser beam LB also interferes. The first reflecting mirror 103 and the second reflecting mirror 104 are oscillated in a direction perpendicular to a direction in which the laser beam LB is scanned, intensity distribution of the laser beam LB in an oscillation direction is temporally averaged.

Abstract: An object is to provide a method for manufacturing a light-emitting device in which a defective portion is insulated. In addition, another object is to provide a manufacturing apparatus of a light-emitting device in which a defective portion is insulated. After a hemispherical lens is formed to overlap with a light-emitting element, the defective portion is detected. Then, the hemispherical lens overlapping with the light-emitting element including the detected defective portion may be irradiated with a laser beam having a low energy density, and the defective portion may be insulated by light condensed through the hemispherical lens.

Abstract: The noise amount information storage unit 161 stores noise amount information which indicates relationships between gain value of the variable gain amplification units 121 and 125 and the amount of noise included in BB signals output from the down converters 131 and 135. The AGC unit 140 controls the gain value of the variable gain amplification units 121 and 125 so that the power of BB signals output from the down converters 131 and 135 becomes constant. The noise amount estimation unit 162 estimates noise amount of noise corresponding to the controlled gain value of the variable gain amplification units 121 and 125 by referring to the noise amount information stored in the noise amount information storage unit 161. The weight generation unit 170 generates weight matrix based on results of estimations performed by the channel characteristic estimation unit 150 and the noise estimation unit 162.

Abstract: One object is to provide a lighting device having a large irradiation range at low cost. One object is to provide a lighting device with improved light extraction efficiency at low cost. The lighting device includes a light-transmitting base, a first light-transmitting electrode formed over almost the whole area of a surface of the light-transmitting base, an EL layer over the first light-transmitting electrode, and a second electrode over the EL layer. The light-transmitting base has a cylindrical shape, a conical shape, a prismatic shape, or a pyramidal shape whose bottom surface is the surface of the light-transmitting base.

Abstract: A timing signal generating part generates a timing signal at a preceding timing preceding a switchover timing between a video signal for the left eye and a video signal for the right eye by a predetermined offset time. When a transmitting time adjustment cause is detected by an adjustment cause detecting part at a generating timing of the timing signal, a timing signal transmitting part generates an adjusted timing signal by adjusting the transmitting time of the timing signal by a predetermined adjustment time at a transmitting time at which the transmitting time adjustment cause does not exist, adds adjustment time information including the information on the adjustment time to the adjusted timing signal, and wirelessly transmits the resultant signal to the wireless communication apparatus.

Abstract: A technique for increasing productivity by simplified steps in a manufacturing process of TFTs, electronic circuits using TFTs, and semiconductor devices formed of TFTs is provided. A method for manufacturing a semiconductor device includes forming a light absorbing layer, forming a light-transmitting layer on the light absorbing layer emitting a linear laser beam with a homogenized energy onto a mask and thereby splitting the linear laser beam into a plurality of laser beams and emitting the plurality of laser beams onto the light-transmitting layer on the light absorbing layer, and thereby forming a plurality of openings in the light-transmitting layer and the light absorbing layer.

Abstract: It is an object of the present invention to provide a laser irradiation apparatus being able to irradiate the irradiation object with the laser beam having homogeneous energy density without complicating the optical system. The laser irradiation apparatus of the present invention comprises a laser oscillator, an optical system for scanning repeatedly a beam spot of the laser beam emitted from the laser oscillator in a uniaxial direction over the surface of the irradiation object, and a position controlling means for moving the position of the irradiation object relative to the laser beam in a direction perpendicular to the uniaxial direction.

Abstract: There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region.