Abstract: A leadframe includes a first frame part and a second frame part. The first frame part includes a bed portion including a first section being thin in a first direction, a first support portion, a first lead portion positioned between the bed portion and the first support portion in a second direction, the first lead portion being connected with the bed portion and the first support portion, a first extension portion being connected to the bed portion, and a second extension portion separated from the first extension portion in a third direction and connected to the bed portion. The second frame part includes a second support portion connected to the first and second extension portions, and a second lead portion connected to the second support portion.

Abstract: An article retaining device includes a hopper configured to temporarily retain articles and discharge the articles, and a supporting body configured to detachably support the hopper. The hopper has a main body configured to retain the articles, and an extending portion that extends along a width direction of the main body. The supporting body has an engaging portion that engages with the extending portion, and a guide surface configured to guide movement of the extending portion to the engaging portion when the hopper is attached.

Abstract: A combination weighing apparatus 1 includes a pool hopper 5 and a support body 11. An attached portion 30 of the support body 11 has first defining portions 34 and 39 and second defining portions 35 and 40, support portions 36 and 41 capable of supporting a first locking member 24, and guide portions 37 and 42 disposed on the track of a second locking member 25 at a time when the pool hopper 5 is swung to the support body 11 side about the first locking member 24 with the first locking member 24 supported by the support portions 36 and 41 and guiding the second locking member 25 such that the second locking member 25 moves to the lower side in a height direction with respect to a position on the track and is positioned in the second defining portions 35 and 40.

Abstract: A leadframe includes a first frame part and a second frame part. The first frame part includes a bed portion including a first section being thin in a first direction, a first support portion, a first lead portion positioned between the bed portion and the first support portion in a second direction, the first lead portion being connected with the bed portion and the first support portion, a first extension portion being connected to the bed portion, and a second extension portion separated from the first extension portion in a third direction and connected to the bed portion. The second frame part includes a second support portion connected to the first and second extension portions, and a second lead portion connected to the second support portion.

Abstract: A conveyance mechanism is configured to sandwich a label including the adhesive side, on which an adhesive has been provided, between a drive roller and a rotatably provided assist roller and to drive the drive roller in order to unwind the label from a label roll in which the label is wound. The assist roller includes a contact portion configured to come into contact with at least a part of the print side of the label. The contact portion is provided so as to avoid coming into contact with an adhesive oozing from at least one of edges of the label along a conveyance direction of the label.

Abstract: A processing temperature TS by a rapid thermal processing furnace is 1250° C. or more and 1350° C. or less, and a cooling rate Rd from the processing temperature is in a range of 20° C./s or more and 150° C./s or less, and thermal processing is performed by adjusting the processing temperature TS and the cooling rate Rd within a range between the upper limit P=0.00207TS·Rd?2.52Rd+13.3 (Formula (A)) and the lower limit P=0.000548TS·Rd?0.605Rd?0.511 (Formula (B)) of an oxygen partial pressure P in a thermal processing atmosphere.

Abstract: A combination weighing apparatus 1 includes a pool hopper 5 and a support body 11. An attached portion 30 of the support body 11 has first defining portions 34 and 39 and second defining portions 35 and 40, support portions 36 and 41 capable of supporting a first locking member 24, and guide portions 37 and 42 disposed on the track of a second locking member 25 at a time when the pool hopper 5 is swung to the support body 11 side about the first locking member 24 with the first locking member 24 supported by the support portions 36 and 41 and guiding the second locking member 25 such that the second locking member 25 moves to the lower side in a height direction with respect to a position on the track and is positioned in the second defining portions 35 and 40.

Abstract: An evaluation method of a silicon wafer allows non-destructive and non-contact inspection of a slip that affects the electrical properties of semiconductor devices, without being subjected to restrictions of the surface condition of silicon wafers or processing contents as much as possible. The evaluation method of a silicon wafer includes a step of section analysis where a surface of a single crystal silicon wafer after thermal processing is divided by equally-spaced lines into sections with an area of 1 mm2 or more and 25 mm2 or less and the existence of strain in each of the sections is determined based on a depolarization value of polarized infrared light, and a screening step where the wafer is evaluated as non-defective when the number of adjacent sections being determined to have strain by the section analysis step does not exceed a predetermined threshold value.

Abstract: An evaluation method of a silicon wafer allows non-destructive and non-contact inspection of a slip that affects the electrical properties of semiconductor devices, without being subjected to restrictions of the surface condition of silicon wafers or processing contents as much as possible. The evaluation method of a silicon wafer includes a step of section analysis where a surface of a single crystal silicon wafer after thermal processing is divided by equally-spaced lines into sections with an area of 1 mm2 or more and 25 mm2 or less and the existence of strain in each of the sections is determined based on a depolarization value of polarized infrared light, and a screening step where the wafer is evaluated as non-defective when the number of adjacent sections being determined to have strain by the section analysis step does not exceed a predetermined threshold value.

Abstract: A protective-film forming method for a semiconductor substrate suppresses deterioration in the number of LPDs and adhesion of impurities such as particles by forming a new protective-film of a surfactant solution when the semiconductor substrate is detached from a polishing head. The method includes a first protective-film forming process for forming a protective-film by hydrophilizing the front surface of the polished substrate with a surfactant solution and, after the first protective-film forming process, a second protective-film forming process for forming protective-films on the front and back surface of the substrate by detaching the substrate from the polishing head in a state where at least the front surface of the polished semiconductor substrate is in contact with the liquid surface of the protective-film forming treatment liquid comprising a surfactant solution, then by immersing the polished substrate in a protective-film forming treatment liquid.

Abstract: A protective-film forming method for a semiconductor substrate suppresses deterioration in the number of LPDs and adhesion of impurities such as particles by forming a new protective-film of a surfactant solution when the semiconductor substrate is detached from a polishing head. The method includes a first protective-film forming process for forming a protective-film by hydrophilizing the front surface of the polished substrate with a surfactant solution and, after the first protective-film forming process, a second protective-film forming process for forming protective-films on the front and back surface of the substrate by detaching the substrate from the polishing head in a state where at least the front surface of the polished semiconductor substrate is in contact with the liquid surface of the protective-film forming treatment liquid comprising a surfactant solution, then by immersing the polished substrate in a protective-film forming treatment liquid.

Abstract: A processing temperature TS by a rapid thermal processing furnace is 1250° C. or more and 1350° C. or less, and a cooling rate Rd from the processing temperature is in a range of 20° C./s or more and 150° C./s or less, and thermal processing is performed by adjusting the processing temperature TS and the cooling rate Rd within a range between the upper limit P=0.00207TS·Rd?2.52Rd+13.3 (Formula (A)) and the lower limit P=0.000548TS·Rd?0.605Rd?0.511 (Formula (B)) of an oxygen partial pressure P in a thermal processing atmosphere.

Abstract: A conveyance mechanism is configured to sandwich a label including the adhesive side, on which an adhesive has been provided, between a drive roller and a rotatably provided assist roller and to drive the drive roller in order to unwind the label from a label roll in which the label is wound. The assist roller includes a contact portion configured to come into contact with at least a part of the print side of the label. The contact portion is provided so as to avoid coming into contact with an adhesive oozing from at least one of edges of the label along a conveyance direction of the label.

Abstract: A silicon wafer includes a denuded zone which is a surface layer and of which the density of vacancy-oxygen complexes which are complexes of vacancies and oxygen is less than 1.0×1012/cm3. An intermediate layer is disposed inwardly of the denuded zone so as to be adjacent to the denuded zone. The density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction from the boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3. The intermediate layer has a depth determined corresponding to the depth of the denuded zone. A bulk layer is disposed inwardly of the intermediate layer so as to be adjacent to the intermediate layer. The density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over.

Abstract: A silicon wafer includes a denuded zone which is a surface layer and of which the density of vacancy-oxygen complexes which are complexes of vacancies and oxygen is less than 1.0×1012/cm3. An intermediate layer is disposed inwardly of the denuded zone so as to be adjacent to the denuded zone. The density of the vacancy-oxygen complexes in the intermediate layer increases gradually inwardly in the depth direction from the boundary with the denuded zone within a range of 1.0×1012/cm3 or over and less than 5.0×1012/cm3. The intermediate layer has a depth determined corresponding to the depth of the denuded zone. A bulk layer is disposed inwardly of the intermediate layer so as to be adjacent to the intermediate layer. The density of the vacancy-oxygen complexes in the bulk layer is 5.0×1012/cm3 or over.

Abstract: A silicon wafer is manufactured by subjecting a silicon wafer sliced from a silicon single-crystal ingot grown by the Czochralski process to a rapid thermal process in which the silicon wafer is heated to a maximum temperature within a range of 1300 to 1380° C., and kept at the maximum temperature for 5 to 60 seconds; and removing a surface layer of the wafer where a semiconductor device is to be manufactured by a thickness of not less X [?m] which is calculated according to the below equations (1) to (3): X [?m]=a [?m]+b [?m]??(1); a [?m]=(0.0031×(said maximum temperature) [° C.]?3.1)×6.4×(cooling rate)?0.4 [° C./second]??(2); and b [?m]=a/(solid solubility limit of oxygen) [atoms/cm3]/(oxygen concentration in substrate) [atoms/cm3]??(3).

Abstract: A semiconductor device comprises a first metal lead frame portion with a chip mounting surface, a second metal lead frame portion, and a semiconductor chip with a first surface facing and attached to the chip mounting surface of the first metal lead frame part and a second surface facing away from the chip mounting surface of the first metal lead frame part. A connector portion is electrical connected to the second metal lead frame portion and is attached to the second surface of the semiconductor chip. The connector portion covers the entirety of a planar area of the semiconductor chip when viewed along a direction orthogonal to second surface of the semiconductor chip.

Abstract: A drive unit for actuating a brake device by a driver's operation, when a vehicle is parked or stopped, is disposed independently in a trailing arm for each of right and left rear wheels. Thus, the drive unit for actuating the brake device via a wire when the vehicle is stopped or parked can be loaded, even if the space of the vehicle is tight. That is, the drive unit for actuating the brake device via the wire when the vehicle is stopped or parked can be loaded, regardless of the space of the vehicle.

Abstract: A semiconductor device comprises a first metal lead frame portion with a chip mounting surface, a second metal lead frame portion, and a semiconductor chip with a first surface facing and attached to the chip mounting surface of the first metal lead frame part and a second surface facing away from the chip mounting surface of the first metal lead frame part. A connector portion is electrical connected to the second metal lead frame portion and is attached to the second surface of the semiconductor chip. The connector portion covers the entirety of a planar area of the semiconductor chip when viewed along a direction orthogonal to second surface of the semiconductor chip.

Abstract: A drive unit for actuating a brake device by a driver's operation, when a vehicle is parked or stopped, is disposed independently in a trailing arm for each of right and left rear wheels. Thus, the drive unit for actuating the brake device via a wire when the vehicle is stopped or parked can be loaded, even if the space of the vehicle is tight. That is, the drive unit for actuating the brake device via the wire when the vehicle is stopped or parked can be loaded, regardless of the space of the vehicle.