Patents by Inventor Koji Asakawa

Koji Asakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100183866
    Abstract: The present invention provides a method for easily producing a particle-arranged structure. In the structure produced by the method, particles are regularly arranged. The method of the present invention comprises: preparing a dispersion comprising a solvent, a polymerizable compound dissolved in the solvent and particles insoluble and dispersed uniformly in the solvent; spin-coating the dispersion on a substrate so as to arrange the particles in the liquid phase of the dispersion; and then curing the polymerizable compound.
    Type: Application
    Filed: January 14, 2010
    Publication date: July 22, 2010
    Inventors: Akira FUJIMOTO, Tsutomu Nakanishi, Shigeru Matake, Koji Asakawa
  • Patent number: 7759861
    Abstract: In an organic EL display provided with a transparent substrate, a buffer layer provided on the transparent substrate, and an organic EL element provided on the buffer layer, the buffer layer is formed of a material having the same refractive index as the transparent electrode of the EL element, and has a two-dimensional concavo-convex structure having two pattern periods.
    Type: Grant
    Filed: September 26, 2005
    Date of Patent: July 20, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Fujimoto, Koji Asakawa, Tsutomu Nakanishi
  • Publication number: 20100175749
    Abstract: A solar cell includes: a first electrode layer formed on a substrate; a generating layer formed on the first electrode layer; and a second electrode layer formed on the generating layer, at least one of the first electrode layer and the second electrode layer being a metal electrode layer having optical transparency, the metal electrode layer having a plurality of openings that penetrate through the metal electrode layer. The metal electrode layer includes metal parts, any two metal parts of the metal electrode layer continues to each other without a cut portion, the metal electrode layer has a film thickness in the range of 10 nm to 200 nm, and sizes of the openings are equal to or smaller than ½ of the wavelength of light to be used for generating electricity.
    Type: Application
    Filed: January 29, 2009
    Publication date: July 15, 2010
    Inventors: Eishi Tsutsumi, Tsutomu Nakanishi, Ryota Kitagawa, Akira Fujimoto, Koji Asakawa, Satoshi Mikoshiba
  • Publication number: 20100160589
    Abstract: Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
    Type: Application
    Filed: March 3, 2010
    Publication date: June 24, 2010
    Inventors: Koji ASAKAWA, Kenichi Ohashi, Akira Fujimoto, Takashi Sasaki
  • Patent number: 7741649
    Abstract: In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ? to 9/10 of that of the bottom of the mesa portion.
    Type: Grant
    Filed: October 6, 2008
    Date of Patent: June 22, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Fujimoto, Koji Asakawa, Kenichi Ohashi
  • Patent number: 7737460
    Abstract: A white LED includes an LED chip formed on one main surface of a sapphire substrate, the LED chip being formed in a semiconductor stack structure including a light emitting layer and emitting light of a predetermined wavelength, a light extracting film applied on the other main surface of the substrate, the light extracting film being formed of a material having a refractive index within a range of ±5% of a refractive index of the substrate and a surface of the light extracting film that is located on an opposite side to the substrate being processed into a recess and projection shape, and a phosphor member provided on an opposite side of the substrate with respect to the light extracting film, and generating white light as light is incident thereon.
    Type: Grant
    Filed: February 9, 2006
    Date of Patent: June 15, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Fujimoto, Koji Asakawa
  • Patent number: 7714316
    Abstract: Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
    Type: Grant
    Filed: May 13, 2008
    Date of Patent: May 11, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Asakawa, Kenichi Ohashi, Akira Fujimoto, Takashi Sasaki
  • Publication number: 20100065868
    Abstract: A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4?×(area)/(circumferential length)2) being equal to or larger than 0.7.
    Type: Application
    Filed: March 16, 2009
    Publication date: March 18, 2010
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ryota Kitagawa, Akira Fujimoto, Koji Asakawa, Takeyuki Suzuki
  • Publication number: 20090242925
    Abstract: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ? of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ? of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
    Type: Application
    Filed: January 30, 2009
    Publication date: October 1, 2009
    Inventors: Ryota KITAGAWA, Koji Asakawa, Akira Fujimoto, Tsutomu Nakanishi, Eishi Tsutsumi
  • Publication number: 20090236962
    Abstract: The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein.
    Type: Application
    Filed: February 25, 2009
    Publication date: September 24, 2009
    Inventors: Akira FUJIMOTO, Koji Asakawa, Tsutomu Nakanishi, Eishi Tsutsumi, Ryota Kitagawa
  • Publication number: 20090224660
    Abstract: The present invention provides a highly efficient light-extraction layer and an organic electroluminescence element excellent in light-extraction efficiency. The light-extraction layer of the present invention comprises a reflecting layer and a three-dimensional diffraction layer formed thereon. The diffraction layer comprises fine particles having a variation coefficient of the particle diameter of 10% or less and of a matrix having a refractive index different from that of the fine particles. The particles have a volume fraction of 50% or more based on the volume of the diffraction layer. The particles are arranged to form first areas having short-distance periodicity, and the first areas are disposed and adjacent to each other in random directions to form second areas. The organic electroluminescence element of the present invention comprises the above light-extraction layer.
    Type: Application
    Filed: December 31, 2008
    Publication date: September 10, 2009
    Inventors: Tsutomu Nakanishi, Akira Fujimoto, Shigeru Matake, Koji Asakawa
  • Publication number: 20090219617
    Abstract: While gold wire grids have been used to polarize infrared wavelengths for over a hundred years, they are not appropriate for shorter wavelengths due to their large period. With embodiments of the present invention, grids with periods a few tens of nanometers can be fabricated. Among other things, such grids can be used to polarize visible and even ultraviolet light. As a result, such wire grid polarizers have a wide variety of applications and uses, such as, e.g., in the fabrication of semiconductors, nanolithography, and more.
    Type: Application
    Filed: October 31, 2006
    Publication date: September 3, 2009
    Applicants: KABUSHIKI KAISHA TOSHIBA, PRINCETON UNIVERSITY
    Inventors: Koji Asakawa, Vincent Pelletier, Mingshaw Wu, Douglas H. Adamson, Richard A. Register, Paul M. Chaikin, Young-Rae Hong
  • Publication number: 20090211783
    Abstract: The present invention provides a light-transmitting metal electrode including a substrate and a metal electrode layer having plural openings. The metal electrode layer also has such a continuous metal part that any pair of point-positions in the part is continuously connected without breaks. The openings in the metal electrode layer are periodically arranged to form plural microdomains. The plural microdomains are so placed that the in-plane arranging directions thereof are oriented independently of each other. The thickness of the metal electrode layer is in the range of 10 to 200 nm.
    Type: Application
    Filed: September 23, 2008
    Publication date: August 27, 2009
    Inventors: Eishi Tsutsumi, Tsutomu Nakanishi, Akira Fujimoto, Koji Asakawa
  • Publication number: 20090189180
    Abstract: A silicone resin composition is provided, which includes polysiloxane including (PSA1), (PSA2), (PSB) and (PSC), and a hydrosilylating catalyst, wherein a weight ratio between (PSA2) and (PSA1) (w2/w1) is 0.03-0.
    Type: Application
    Filed: December 19, 2008
    Publication date: July 30, 2009
    Inventors: Shinji MURAI, Koji Asakawa
  • Publication number: 20090179543
    Abstract: A display device comprises a substrate and a laminate structure formed on the substrate and comprising a plurality of layers including a display region. The laminate structure has a recessed/projected portions at least one of an outermost surface of display side and an interface between the layers. The projected portions of the recessed/projected portions have a mean circle-equivalent diameter ranging from 50 nm to 250 nm with the standard deviation of circle-equivalent diameter of the projected portions being within the range of 10 to 50% of the mean circle-equivalent diameter, and a mean height ranging from 100 nm to 500 nm with the standard deviation of height being within the range of 10 to 50% of the mean height. The projected portions have a circularity coefficient ranging from 0.6 to 1, and an area ratio ranging from 20 to 75%.
    Type: Application
    Filed: March 24, 2009
    Publication date: July 16, 2009
    Inventors: Akira Fujimoto, Koji Asakawa
  • Publication number: 20090176015
    Abstract: The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
    Type: Application
    Filed: December 31, 2008
    Publication date: July 9, 2009
    Inventors: Tsutomu NAKANISHI, Akira Fujimoto, Koji Asakawa, Takeshi Okino, Shinobu Sugimura
  • Publication number: 20090130380
    Abstract: A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc?No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
    Type: Application
    Filed: January 16, 2009
    Publication date: May 21, 2009
    Inventors: Koji Asakawa, Toshiro Hiraoka, Yoshihiro Akasaka, Yasuyuki Hotta
  • Patent number: 7535327
    Abstract: A circuit breaker includes a main case containing a contactor section, an arc-extinguishing device and an overcurrent tripping device; a middle cover laid on the main case, the middle cover having in a central section thereof a recess partitioned with a bottom wall for containing a switching mechanism and at least one interior attachment; and a top cover covering the top side of the recess in the middle cover. The main case, the middle cover and the top cover are arranged to be dividable from one another. The middle cover has an auxiliary cover, covering the switching mechanism, and the auxiliary cover has the top cover mounted thereon.
    Type: Grant
    Filed: July 25, 2006
    Date of Patent: May 19, 2009
    Assignee: Fuji Electric FA Components & Systems Co., Ltd.
    Inventors: W. P. Hemantha Desilva, Koji Asakawa, Hideto Yamagata, Akifumi Sato, Yasuhiro Takahashi
  • Patent number: 7524428
    Abstract: A display device comprises a substrate and a laminate structure formed on the substrate and comprising a plurality of layers including a display region. The laminate structure has a recessed/projected portions at least one of an outermost surface of display side and an interface between the layers. The projected portions of the recessed/projected portions have a mean circle-equivalent diameter ranging from 50 nm to 250 nm with the standard deviation of circle-equivalent diameter of the projected portions being within the range of 10 to 50% of the mean circle-equivalent diameter, and a mean height ranging from 100 nm to 500 nm with the standard deviation of height being within the range of 10 to 50% of the mean height. The projected portions have a circularity coefficient ranging from 0.6 to 1, and an area ratio ranging from 20 to 75%.
    Type: Grant
    Filed: February 26, 2004
    Date of Patent: April 28, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Fujimoto, Koji Asakawa
  • Patent number: 7517466
    Abstract: A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc?No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
    Type: Grant
    Filed: June 20, 2006
    Date of Patent: April 14, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Asakawa, Toshiro Hiraoka, Yoshihiro Akasaka, Yasuyuki Hotta