Patents by Inventor Koji Asakawa

Koji Asakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RECHARGEABLE ELECTRIC DEVICE
    Publication number: 20130169217
    Abstract: Under a control by a controller (14), a rechargeable electric device makes a full charge display to display on a display unit (15) that a secondary battery (11) is fully charged, after a start of charging the secondary battery (11) in a case where either when a count value of a counter reaches a first predetermined value (C1) corresponding to the full charge of the secondary battery (11), or when a duty ratio of switching signals which make an on/off control of a switching element (131) becomes smaller than or equal to a predetermined value (D) corresponding to the charge current obtained at a time of the full charge of the secondary battery (11).
    Type: Application
    Filed: June 13, 2011
    Publication date: July 4, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Kazunori Watanabe, Koji Asakawa, Seiichi Iwao
  • CIRCUIT BREAKER
    Publication number: 20130162377
    Abstract: A molded case housing each part is configured of a case main body (54) and a cover (55) placed on an upper portion of the case main body, the case main body (54) is configured of a bottom portion case (56) that forms a bottom portion of a circuit breaker and an intermediate case (57), placed on an upper portion of the bottom portion case, having a dividing wall that blocks off a space between the intermediate case and the bottom portion case. A power source side terminal block (3) and second movable contact (4) are fitted inside the bottom portion case, and a first movable contact (5), the load side terminal block (9), the contact portion (52), and the arc extinguishing chamber (6) are fitted inside the intermediate case.
    Type: Application
    Filed: September 12, 2011
    Publication date: June 27, 2013
    Inventors: Shinichiro Ando, Koji Asakawa, Akifumi Sato, W. P. Hemantha Desilva, Tomoo Yamazaki
  • ANTIREFLECTION STRUCTURE FORMATION METHOD AND ANTIREFLECTION STRUCTURE
    Publication number: 20130135746
    Abstract: The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
    Type: Application
    Filed: December 21, 2012
    Publication date: May 30, 2013
    Inventors: Tsutomu Nakanishi, Akira Fujimoto, Koji Asakawa, Takeshi Okino
  • Semiconductor light-emitting element and process for production thereof
    Patent number: 8450768
    Abstract: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ? of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ? of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
    Type: Grant
    Filed: December 23, 2011
    Date of Patent: May 28, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ryota Kitagawa, Koji Asakawa, Akira Fujimoto, Tsutomu Nakanishi, Eishi Tsutsumi
  • Method for manufacturing porous structure and method for forming pattern
    Patent number: 8435416
    Abstract: A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc-No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: May 7, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Asakawa, Toshiro Hiraoka, Yoshihiro Akasaka, Yasuyuki Hotta
  • SOLAR CELL
    Publication number: 20130092219
    Abstract: The present invention provides a solar cell comprising a laminate of a photoelectric conversion layer, a metal porous membrane and a refractive index adjusting layer. The metal porous membrane is positioned on the light-incident side, is directly in contact with the photoelectric conversion layer, and has plural openings bored though the membrane. The refractive index adjusting layer covers at least a part of the surface of the metal porous membrane and of the inner surfaces of the openings, and has a refractive index of 1.35 to 4.2 inclusive. If adopting a nano-fabricated metal membrane as an electrode, the present invention enables to provide a solar cell capable of realizing efficient photoelectric conversion by use of electric field-enhancement effect.
    Type: Application
    Filed: September 14, 2012
    Publication date: April 18, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Eishi TSUTSUMI, Kumi Masunaga, Ryota Kitagawa, Tsutomu Nakanishi, Akira Fujimoto, Koji Asakawa
  • PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF PRODUCING THE SAME
    Publication number: 20130081683
    Abstract: The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres.
    Type: Application
    Filed: September 27, 2012
    Publication date: April 4, 2013
    Inventors: Kumi MASUNAGA, Akira FUJIMOTO, Eishi TSUTSUMI, Koji ASAKAWA, Tsutomu NAKANISHI, Hideyuki NISHIZAWA, Ryota KITAGAWA
  • LIGHT-TRANSMITTING METAL ELECTRODE, ELECTRONIC APPARATUS AND LIGHT EMITTING DEVICE
    Publication number: 20130075778
    Abstract: According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.
    Type: Application
    Filed: February 28, 2012
    Publication date: March 28, 2013
    Inventors: Tsutomu NAKANISHI, Akira FUJIMOTO, Ryota KITAGAWA, Kumi MASUNAGA, Kenji NAKAMURA, Koji ASAKAWA, Shinji NUNOTANI, Takanobu KAMAKURA
  • METHOD OF FORMING PATTERN AND LAMINATE
    Publication number: 20130078570
    Abstract: According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.
    Type: Application
    Filed: September 25, 2012
    Publication date: March 28, 2013
    Inventors: Atsushi HIENO, Shigeki HATTORI, Hiroko NAKAMURA, Satoshi MIKOSHIBA, Koji ASAKAWA, Masahiro KANNO, Yuriko SEINO, Tsukasa AZUMA
  • POWER SUPPLY DEVICE
    Publication number: 20130063095
    Abstract: Provided is a power supply device integrally combined with an electrical device body including a motor, comprising a rechargeable battery for supplying power to the motor, a microcomputer for detecting a residual capacity and a battery voltage of the battery, and a switching element provided between the battery and the microcomputer. The microcomputer stops charging the battery when the detected residual capacity has become 100%, and when the detected value of the battery voltage has become lower than a peak value after the value of the battery voltage passes the peak value, making it possible to prevent overcharging of the battery. The microcomputer also controls to turn off the switching element to stop the power supply from the battery to the microcomputer when the residual capacity becomes less than a predetermined threshold value, making it possible to reduce power consumption.
    Type: Application
    Filed: July 27, 2012
    Publication date: March 14, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Kazunori WATANABE, Koji ASAKAWA
  • Display device and method of manufacturing transparent substrate for display device
    Patent number: 8395305
    Abstract: A display device comprises a substrate and a laminate structure formed on the substrate and comprising a plurality of layers including a display region. The laminate structure has a recessed/projected portions at least one of an outermost surface of display side and an interface between the layers. The projected portions of the recessed/projected portions have a mean circle-equivalent diameter ranging from 50 nm to 250 nm with the standard deviation of circle-equivalent diameter of the projected portions being within the range of 10 to 50% of the mean circle-equivalent diameter, and a mean height ranging from 100 nm to 500 nm with the standard deviation of height being within the range of 10 to 50% of the mean height. The projected portions have a circularity coefficient ranging from 0.6 to 1, and an area ratio ranging from 20 to 75%.
    Type: Grant
    Filed: March 24, 2009
    Date of Patent: March 12, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Fujimoto, Koji Asakawa
  • Method for manufacturing porous structure and method for forming pattern
    Patent number: 8394877
    Abstract: A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc?No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: March 12, 2013
    Assignee: Kabushika Kaisha Toshiba
    Inventors: Koji Asakawa, Toshiro Hiraoka, Yoshihiro Akasaka, Yasuyuki Hotta
  • LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF
    Publication number: 20130057138
    Abstract: The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ? of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ? of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
    Type: Application
    Filed: November 6, 2012
    Publication date: March 7, 2013
    Inventors: Eishi TSUTSUMI, Akira Fujimoto, Koji Asakawa
  • Antireflection structure formation method and antireflection structure
    Patent number: 8361339
    Abstract: The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: January 29, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Nakanishi, Akira Fujimoto, Koji Asakawa, Takeshi Okino, Shinobu Sugimura
  • Semiconductor light-emitting device and process for production thereof
    Patent number: 8357557
    Abstract: One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.
    Type: Grant
    Filed: March 4, 2010
    Date of Patent: January 22, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Fujimoto, Ryota Kitagawa, Koji Asakawa, Hidefumi Yasuda, Yasuhiko Akaike, Takeyuki Suzuki
  • Light-extraction layer of light-emitting device and organic electroluminescence element employing the same
    Patent number: 8355204
    Abstract: The present invention provides a highly efficient light-extraction layer and an organic electroluminescence element excellent in light-extraction efficiency. The light-extraction layer of the present invention comprises a reflecting layer and a three-dimensional diffraction layer formed thereon. The diffraction layer comprises fine particles having a variation coefficient of the particle diameter of 10% or less and of a matrix having a refractive index different from that of the fine particles. The particles have a volume fraction of 50% or more based on the volume of the diffraction layer. The particles are arranged to form first areas having short-distance periodicity, and the first areas are disposed and adjacent to each other in random directions to form second areas. The organic electroluminescence element of the present invention comprises the above light-extraction layer.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: January 15, 2013
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tsutomu Nakanishi, Akira Fujimoto, Shigeru Matake, Koji Asakawa
  • Light-transmitting metal electrode having hyperfine structure and process for preparation thereof
    Patent number: 8334547
    Abstract: The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ? of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ? of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
    Type: Grant
    Filed: August 7, 2008
    Date of Patent: December 18, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Eishi Tsutsumi, Akira Fujimoto, Koji Asakawa
  • PHOTOELECTRIC CONVERSION ELEMENT
    Publication number: 20120247552
    Abstract: A photoelectric conversion element includes a photoelectric conversion layer to include a first metal layer, a semiconductor layer, and a second metal layer, all of which are laminated. In addition, at least one of the first metal layer and the second metal layer is a nano-mesh metal having a plurality of through holes or a dot metal having a plurality of metal dots arranged separately from each other on the semiconductor layer. The photoelectric conversion layer includes a long-wavelength absorption layer containing an impurity which is different from impurities for p-type doping and n-type doping of the semiconductor layer. The long-wavelength absorption layer is within a depth of 5 nm from the nano-mesh metal or the dot metal.
    Type: Application
    Filed: March 16, 2012
    Publication date: October 4, 2012
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Akira FUJIMOTO, Tsutomu Nakanishi, Kenji Nakamura, Kumi Masunaga, Koji Asakawa
  • METHOD OF FORMING PATTERN
    Publication number: 20120244474
    Abstract: According to one embodiment, a method of forming a pattern includes applying a block copolymer to a substrate, the block copolymer including a first block and a second block, the first block including polyacrylate or polymethacrylate having a side chain to which an alicyclic hydrocarbon group or a hydrocarbon group including a tertiary carbon is introduced, and the second block including polystyrene substituted with hydrocarbon or halogen at an ?-position, causing the block copolymer to be phase-separated, irradiating the block copolymer with an energy beam to decompose the second block, and removing the second block with a developer to form a pattern of the first block.
    Type: Application
    Filed: March 26, 2012
    Publication date: September 27, 2012
    Inventors: Koji ASAKAWA, Shigeki Hattori, Ryota Kitagawa
  • ORGANIC MOLECULAR MEMORY
    Publication number: 20120241713
    Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.
    Type: Application
    Filed: March 21, 2012
    Publication date: September 27, 2012
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hideyuki NISHIZAWA, Reiko YOSHIMURA, Tsukasa TADA, Shigeki HATTORI, Masaya TERAI, Satoshi MIKOSHIBA, Koji ASAKAWA