Patents by Inventor Koji Asakawa

Koji Asakawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF
    Publication number: 20090079322
    Abstract: The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ? of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ? of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.
    Type: Application
    Filed: August 7, 2008
    Publication date: March 26, 2009
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Eishi TSUTSUMI, Akira Fujimoto, Koji Asakawa
  • Polarizing element, method of manufacturing polarizing element, method of evaluating exposure apparatus, method of manufacturing semiconductor device, and exposure apparatus
    Patent number: 7505117
    Abstract: A polarizing element is disclosed which includes a smooth glass substrate and a polarization layer formed thereon, the polarization layer having polarization characteristics for the incident light. The polarization layer is made of a carbon-based substance including carbon atoms. The carbon atoms are continuously connected via carbon-carbon double bonds having [pi] electron clouds. The [pi] electron clouds have average continuous distance of 100 nm or more in a longitudinal direction and have an average continuous distance less than 50 nm in a transverse direction. The carbon-based substance is formed in such a way that a plurality of the [pi] electron clouds have longitudinal directions which are in parallel along the glass-substrate surface.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: March 17, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Nomura, Koji Asakawa, Yuichi Motoi
  • SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090042325
    Abstract: In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ? to 9/10 of that of the bottom of the mesa portion.
    Type: Application
    Filed: October 6, 2008
    Publication date: February 12, 2009
    Inventors: Akira Fujimoto, Koji Asakawa, Kenichi Ohashi
  • Semiconductor light emitting device and method for manufacturing the same
    Patent number: 7476910
    Abstract: In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ? to 9/10 of that of the bottom of the mesa portion.
    Type: Grant
    Filed: September 8, 2005
    Date of Patent: January 13, 2009
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Fujimoto, Koji Asakawa, Kenichi Ohashi
  • Method of manufacturing semiconductor device, acid etching resistant material and copolymer
    Patent number: 7445881
    Abstract: Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
    Type: Grant
    Filed: February 27, 2007
    Date of Patent: November 4, 2008
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Asakawa, Kenichi Ohashi, Akira Fujimoto, Takashi Sasaki
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ACID ETCHING RESISTANCE MATERIAL AND COPOLYMER
    Publication number: 20080261149
    Abstract: Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
    Type: Application
    Filed: May 13, 2008
    Publication date: October 23, 2008
    Inventors: Koji Asakawa, Kenichi Ohashi, Akira Fujimoto, Takashi Sasaki
  • SILICONE RESIN COMPOSITION
    Publication number: 20080220266
    Abstract: A silicone resin composition is provided, which includes an alkenyl group-containing polysiloxane represented by the following average composition formula (PSA(1)), a hydro group-containing polysiloxane represented by the following average composition formula (PSA(2)), two kinds of polysiloxane, both having opposite ends sealed with a vinyl group, which are represented by the following formulas (PSC(1) and PSC(4)), and a hydrosilylating catalyst:
    Type: Application
    Filed: December 17, 2007
    Publication date: September 11, 2008
    Inventors: Shinji Murai, Koji Asakawa
  • Recording medium, method of manufacturing recording medium and recording apparatus
    Patent number: 7306743
    Abstract: A recording medium includes a substrate, and a recording layer formed on the substrate having (a) a recording track band, and (b) recording cells regularly arrayed in the recording track band to form a plurality rows of sub-tracks. The recording cells included in each sub-track are formed apart from each other at a pitch P in the track direction. Nearest neighboring two recording cells, each positioned on adjacent two sub-tracks in the track band, are formed apart from each other at a pitch P/n in the track direction, where 2?n?5.
    Type: Grant
    Filed: July 27, 2006
    Date of Patent: December 11, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroyuki Hieda, Masatoshi Sakurai, Koji Asakawa, Toshiro Hiraoka, Katsuyuki Naito
  • SHORT-WAVELENGTH POLARIZING ELEMENTS AND THE MANUFACTURE AND USE THEREOF
    Publication number: 20070183025
    Abstract: While gold wire grids have been used to polarize infrared wavelengths for over a hundred years, they are not appropriate for shorter wavelengths due to their large period. With embodiments of the present invention, grids with periods a few tens of nanometers can be fabricated. Among other things, such grids can be used to polarize visible and even ultraviolet light. As a result, such wire grid polarizers have a wide variety of applications and uses, such as, e.g., in the fabrication of semiconductors, nanolithography, and more.
    Type: Application
    Filed: September 19, 2006
    Publication date: August 9, 2007
    Inventors: Koji Asakawa, Vincent Pelletier, Mingshaw Wu, Douglas Adamson, Richard Register, Paul Chaikin
  • SHORT-WAVELENGTH POLARIZING ELEMENTS AND THE MANUFACTURE AND USE THEREOF
    Publication number: 20070183035
    Abstract: While gold wire grids have been used to polarize infrared wavelengths for over a hundred years, they are not appropriate for shorter wavelengths due to their large period. With embodiments of the present invention, grids with periods a few tens of nanometers can be fabricated. Among other things, such grids can be used to polarize visible and even ultraviolet light. As a result, such wire grid polarizers have a wide variety of applications and uses, such as, e.g., in the fabrication of semiconductors, nanolithography, and more.
    Type: Application
    Filed: September 19, 2006
    Publication date: August 9, 2007
    Inventors: Koji Asakawa, Vincent Pelletier, Mingshaw Wu, Douglas Adamson, Richard Register, Paul Chaikin
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ACID ETCHING RESISTANCE MATERIAL AND COPOLYMER
    Publication number: 20070142592
    Abstract: Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
    Type: Application
    Filed: February 27, 2007
    Publication date: June 21, 2007
    Inventors: Koji Asakawa, Kenichi Ohashi, Akira Fujimoto, Takashi Sasaki
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, ACID ETCHING RESISTANCE MATERIAL AND COPOLYMER
    Publication number: 20070138139
    Abstract: Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
    Type: Application
    Filed: February 27, 2007
    Publication date: June 21, 2007
    Inventors: Koji Asakawa, Kenichi Ohashi, Akira Fujimoto, Takashi Sasaki
  • Electrostatic spraying device
    Publication number: 20070131805
    Abstract: An electrostatic spraying device has a capability of confirming that the device is ready for making an electrostatic spraying of the liquid composition on a user's skin. The device includes a nozzle and a pump for dispensing the liquid composition out through the nozzle. An emitter electrode is disposed to electrostatically charge the liquid composition being dispensed for making the electrostatic spraying. The device is provided with a power switch and a selector for selection between a spraying mode and a dripping mode. In the dripping mode, the pump is alone actuated to dispense the liquid composition absent electrostatic charge. In the spraying mode, both of the pump and the emitter electrode are activated to make the electrostatic spraying. Thus, the user can be easy to drip the liquid composition by simply manipulating the selector prior to initiating the electrostatic spraying.
    Type: Application
    Filed: November 26, 2004
    Publication date: June 14, 2007
    Applicants: MATSUSHITA ELECTRIC WORKS, LTD., THE PROCTER & GAMBLE COMPANY
    Inventors: Naoki Yamaguchi, Koji Asakawa, David Wilson, Kazumi Toyama, Meei-Lih Lin
  • Electrostatic spraying device
    Publication number: 20070114305
    Abstract: An electrostatic spraying device has a removable cartridge with a reservoir containing a volume of liquid compositions to be electrically sprayed on a user's skin. The device includes a nozzle for dispensing the liquid as well as an emitter electrode disposed adjacent to the nozzle for charging the liquid composition just being dispensed from the nozzle. A field electrode surrounds the reservoir in order to charge the liquid composition within the reservoir, thereby avoiding an occurrence of electric current which would otherwise flow in the liquid composition and would deteriorate the composition remaining in the reservoir. The reservoir is devoid of the field electrode, and therefore can be designed into a simple and compact structure without being restricted by the field electrode, assuring to have an enhanced liquid containing volume in relation to the bulk of the removable cartridge.
    Type: Application
    Filed: February 9, 2004
    Publication date: May 24, 2007
    Applicants: MATSUSHITA ELECTRIC WORKS, LTD, THE PROCTER & GAMBLE COMPANY
    Inventors: Naoki Yamaguchi, Koji Asakawa, David Wilson, Shunichi Nagasawa
  • Method of manufacturing semiconductor device, acid etching resistance material and copolymer
    Patent number: 7208334
    Abstract: Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1): (in the general formula (1), R1 is a hydrogen atom or methyl group; R3 is a cyclic group selected from an alicyclic group and an aromatic group; R4 is a polar group; R2 is a group represented by the following general formula (2); and j is 0 or 1): (in the general formula (2), R5 is a hydrogen atom or methyl group).
    Type: Grant
    Filed: February 14, 2005
    Date of Patent: April 24, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Asakawa, Kenichi Ohashi, Akira Fujimoto, Takashi Sasaki
  • Circuit breaker
    Patent number: 7187258
    Abstract: A circuit breaker includes an elongated movable contact having a contact at one end thereof for flowing a current therethrough and the other end rotatably supported with a holder, and a protection cover made of an insulating material for covering and protecting a movable contact from short circuit and discharge. The protection cover is made of only the insulating material, covers the movable contact, and has elasticity to tightly hold the movable contact.
    Type: Grant
    Filed: June 7, 2005
    Date of Patent: March 6, 2007
    Assignee: Fuji Electric FA Components & Systems Co., Ltd.
    Inventors: Tomoo Yamazaki, Mitsuhiro Mitsushige, Koji Asakawa, Hideto Yamagata, Akifumi Sato
  • Light-emitting device and method for manufacturing the same
    Patent number: 7179672
    Abstract: A nanometer size roughened structure is formed on a surface of a light-emitting element, and luminous efficiency is improved. The roughened structure on the surface of the light-emitting element of the invention is formed into the following shape such that the refractive index smoothly changes: (1) the mean diameter of projections on the roughened surface is smaller than the light wavelength; (2) a pitch of the roughened surface is irregular; and (3) positions of the top and bottom of the roughened surface are distributed from their mean values within the light wavelength in order to give a smooth gradient of the refractive index.
    Type: Grant
    Filed: November 1, 2004
    Date of Patent: February 20, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koji Asakawa, Akira Fujimoto, Hitoshi Sugiyama, Kenichi Ohashi, Kenji Suzuki, Junichi Tonotani
  • Circuit breaker
    Publication number: 20070035367
    Abstract: A circuit breaker includes a main case containing a contactor section, an arc-extinguishing device and an overcurrent tripping device; a middle cover laid on the main case, the middle cover having in a central section thereof a recess partitioned with a bottom wall for containing a switching mechanism and at least one interior attachment; and a top cover covering the top side of the recess in the middle cover. The main case, the middle cover and the top cover are arranged to be dividable from one another. The middle cover has an auxiliary cover, covering the switching mechanism, and the auxiliary cover has the top cover mounted thereon.
    Type: Application
    Filed: July 25, 2006
    Publication date: February 15, 2007
    Applicant: FUJI ELECTRIC FA COMPONENTS & SYSTEMS CO., LTD.
    Inventors: W.P. Desilva, Koji Asakawa, Hideto Yamagata, Akifumi Sato, Yasuhiro Takahashi
  • Earth leakage breaker
    Patent number: 7167349
    Abstract: An earth leakage breaker includes a main contact, a switch mechanism, an operating handle, a leakage tripping device and an over-current tripping device having an earth-leakage-detection circuit disposed in a main-body case. A power-supply line connects the earth-leakage-detection circuit to the main circuit for supplying voltage between phases of the main circuit as a power source of the earth-leakage-detection circuit. Further, a test switch is provided for turning on and off a power-supply circuit of the power-supply line connected to the earth-leakage-detection circuit, and an operation of the test switch is linked to an ON/OFF operation of the switch mechanism.
    Type: Grant
    Filed: March 2, 2004
    Date of Patent: January 23, 2007
    Assignee: Fuji Electric FA Components & Systems Co., Ltd.
    Inventors: Hisanobu Asano, Koji Asakawa, Yasuhiro Takahashi
  • Process for producing a semiconductor device
    Patent number: 7163781
    Abstract: According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.
    Type: Grant
    Filed: September 10, 2004
    Date of Patent: January 16, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takeshi Okino, Koji Asakawa, Naomi Shida, Toru Ushirogouchi, Satoshi Saito