Abstract: A solid laser apparatus has either a combination of a lowpass filter and a highpass filter or a bandpass filter provided in its output control circuit for increasing the gain and adjusting the phase of a signal in the vicinity of the relaxation oscillating frequency. Also, a solid laser apparatus has the phase shift circuit provided in its output control circuit for advancing the phase of a signal in the vicinity of the relaxation oscillating frequency thereof. Moreover, a solid laser apparatus has a pseudo notch filter, which is arranged for the gain to have a local minimum at the relaxation oscillating frequency of the solid laser apparatus, provided in the output control circuit so that the peak of the gain transmission characteristic of the nonlinear optical device or of a combination of the nonlinear optical device and the microchip laser crystal is offset.

Abstract: A solid laser apparatus has either a combination of a lowpass filter (9c) and a highpass filter (9d) or a bandpass filter 9f provided in its output control circuit (8, 9, 10) for increasing the gain and adjusting the phase of a signal in the vicinity of the relaxation oscillating frequency. Also, a solid laser apparatus has the phase shift circuit (9g) provided in its output control circuit (8,9,10) for advancing the phase of a signal in the vicinity of the relaxation oscillating frequency thereof. Moreover, a solid laser apparatus has a pseudo notch filter (9h), which is arranged for the gain to have a local minimum at the relaxation oscillating frequency of the solid laser apparatus, provided in the output control circuit (8,9,10) so that the peak of the gain transmission characteristic of the nonlinear optical device (4) or of a combination of the nonlinear optical device (4) and the microchip laser crystal (3) is offset.

Abstract: An apparatus comprises a vehicle body side bracket 4 having a vehicle body mount portion 4c to be mounted on a vehicle body and paired left and right opposed flat plate portions 4a, 4b, a steering column 2 having an expanded portion 13, formed by expanding a portion of a tubular material, that is to be in pressure contact with the pair of opposed flat plate portions 4a, 4b of the vehicle body side bracket; a shaft 5 inserted through the pair of opposed flat plate portions 4a, 4b and the expanded portion 13 and adapted to adjust the distance between the pair of opposed flat plate portions 4a, 4b as an operation lever 8 is rotated. The steering column 2 has a portion that is present in an area extending from the shaft 5 up to at least the vehicle body mount portion 4c and has a width substantially equal to the width of a penetrated portion of the expanded portion 13 at which the shaft 5 is inserted through.

Abstract: In a neutral range preset, there are set a zone for stopping and holding a rotating body only by a mechanical brake, a zone for holding the body only by performing position holding control, and a zone for simultaneously exerting both effects, i.e., the effect of the mechanical brake and the effect of the holding control. On-the-spot holding torque generated when the position holding control is performed is stored. The higher of the on-the-spot holding torque stored and accelerating torque according to an operation amount of the body at a rotation starting time is set as electric motor torque for acceleration. When performing a pressing work including pressing a bucket against an object for work, torque control is carried out according to the operation amount.

Abstract: A semiconductor memory device including a plurality of memory cells is provided. One of the plurality of memory cells includes a variable resistor having a resistance value thereof reversibly changed in accordance with a voltage applied thereto, and a transistor connected to the variable resistor.

Abstract: In a semiconductor memory device having a crosspoint-type memory cell array, each reference level between two adjacent memory levels when memory levels of multi-level information stored in a memory cell are arranged in order of size of resistance values of a corresponding variable resistive element is defined by a reference current in a middle state between a first and a second current states. In the first current state, a readout current of high resistance selected cell in which the resistance is higher in the two adjacent memory levels becomes the largest state depending on a distribution pattern of a resistance state of the other unselected cell. In the second current state, a readout current of low resistance selected cell in which the resistance is lower in the two adjacent memory levels becomes a smallest state depending on a distribution pattern of a resistance state of the other unselected memory cell.

Abstract: A steering apparatus for a vehicle has a steering column rotatably supporting a steering shaft, a first support member held between opposed flat plate portions of an upper bracket and supporting the steering column, a second support member held between opposed flat plate portions of a lower bracket and supporting the steering column, a first support mechanism for supporting the steering column on the upper bracket, and a second support mechanism for supporting the steering column on the lower bracket, wherein the steering column, the first support member and the second support member are integrally formed, the first support member is integrally formed with a first swelling portion having a pair of side portions that respectively press-abut on a pair of opposed flat plate portions of the upper bracket, and the second support member is integrally formed with a second swelling portion having a pair of side portions that respectively press-abut on a pair of opposed flat plate portions of the lower bracket.

Abstract: The present invention provides a memory cell having a variable resistor as a memory element, and also provides a memory device comprising the memory cells. The variable resistor is made of a thin-film material (for example, PCMO) or the like having a perovskite structure. So the memory cell can operate at a low voltage and can be highly integrated. The memory cell MC is formed of a combination of a current controlling device and a variable resistor. A field-effect transistor, diode or bipolar transistor is used as the current controlling device. The current controlling device is connected in series with the current path of the variable resistor so as to control a current flowing through the variable resistor.

Abstract: A semiconductor memory device having a crosspoint-type memory cell array includes a column readout voltage supply circuit 12 which supplies a predetermined first voltage when readout is selected, and supplies a second voltage different from the first voltage when the readout is not selected, to each of column selection lines BL, a row readout voltage supply circuit 11 which supplies the second voltage to each of row selection lines DL at the time of readout, a sense circuit 15 which senses a current flowing in the selected row selection line DL separately from a current flowing in the unselected row selection lines DL and senses an electric resistance state of the selected memory cell at the time of readout, and a row voltage displacement prevention circuit 31 which prevents a displacement in a supplied voltage level in at least selected row selection line DL at the time of readout.

Abstract: In a semiconductor memory device having a crosspoint-type memory cell array, each reference level between two adjacent memory levels when memory levels of multi-level information stored in a memory cell are arranged in order of size of resistance values of a corresponding variable resistive element is defined by a reference current in a middle state between a first and a second current states. In the first current state, a readout current of high resistance selected cell in which the resistance is higher in the two adjacent memory levels becomes the largest state depending on a distribution pattern of a resistance state of the other unselected cell. In the second current state, a readout current of low resistance selected cell in which the resistance is lower in the two adjacent memory levels becomes a smallest state depending on a distribution pattern of a resistance state of the other unselected memory cell.

Abstract: In a neutral range preset, there are set a zone for stopping and holding a rotating body only by a mechanical brake, a zone for holding the body only by performing position holding control, and a zone for simultaneously exerting both effects, i.e., the effect of the mechanical brake and the effect of the holding control. On-the-spot holding torque generated when the position holding control is performed is stored. The higher of the on-the-spot holding torque stored and accelerating torque according to an operation amount of the body at a rotation starting time is set as electric motor torque for acceleration. When performing a pressing work including pressing a bucket against an object for work, torque control is carried out according to the operation amount.

Abstract: A steering column apparatus comprising: a steering column provided with a body-side bracket mounted to a body strength member to have a pair of side plate portions opposed each other to be extended in a vertical direction, and a substantially cylindrical distance unit for supporting a steering shaft to be rotatable therein and having a pair of pressed and expanding portions formed to be expanded by plastic working to be pressed and supported by the side plate portions of the body-side bracket; and an adjusting mechanism capable of adjusting a position of the steering column with respect to the side plate portions of the body-side bracket within a predetermined range, wherein the steering column is formed with a reinforcement portion for enhancing the clamping rigidity of the distance unit with respect to the side plate portions.

Abstract: In a construction machine comprising an electric motor 6 for driving a rotational system, an operating member for instructing an operation of the electric motor 6, and a controller 9 for controlling the electric motor 6 according to an operation command from the operating member, the controller 9 has an emulation model 9a for simulating dynamic characteristics of a hydraulic rotation driving device in real time, and a target value for control is calculated from the emulation model 9a according to the operation command from the operating member to control the electric motor 6. Accordingly, the electric motor can mildly respond to the operation of a lever in an intermediate range and swiftly respond to a quick operation of the lever.

Abstract: An optical recording medium containing one or more compounds selected from imide compounds having a metallocene residue in a recording layer and an imide compound represented by a general formula (1): wherein a ring AR represents a substituted or unsubstituted aromatic ring residue or a residue formed by combining two or more aromatic ring residues via one or more linking groups; n represents the number of imide groups bonded to the ring AR; Am represents any one of substituents A1 to An bonded to a nitrogen atom of each imide group; and m represents an integer of from 1 to n, with the proviso that at least one substituent selected from the group consisting of A1 to An is one having at least one substituted or unsubstituted metallocene residue.

Abstract: To eliminate unnaturalness in the display of video signals that are intermittently updated. Video signals recorded in a disk 1 in a compressed manner are reproduced through a pickup 2. The reproduced signals are fed to a reproduction processing unit 3 from where a bit stream is fetched which is then fed to a decoder circuit 4. The decoder circuit 4 produces video signals reconstructed from the compression. The signals from the decoder circuit 4 are fed to an adder 12 which is an adder means through an amplifier 11 which is a weighting circuit having a coefficient of, for example, 0.5. The added signal from the adder 12 is fetched to an output terminal 13, and is fed to a frame memory 14 which is a storage means of, for example, one frame. The signal stored in the frame memory 14 is fed to an adder 12 through an amplifier 15 which is a second weighting circuit having a coefficient of, for example, 0.5.

Abstract: A semiconductor memory device comprises a column readout voltage supply circuit which supplies a predetermined first voltage when readout is selected and supplies a predetermined second voltage which is different from the fist voltage when the readout is not selected, to each column selection line, a row readout voltage supply circuit which supplies the second voltage to each row selection line at the time of readout, a sense circuit which detects a current flowing in the selected row selection line separately from a current flowing in the non-selected row selection lines to detect an electric resistance state of the selected memory cell at the time of readout, and a column voltage displacement prevention circuit which prevents displacement of a supplied voltage level for each of the non-selected column selection lines at the time of readout.

Abstract: A master cylinder device for a brake comprise a master cylinder body having a cylinder bore, a reserve tank provided integrally with the master cylinder body so as to have a fluid reserving portion for feeding hydraulic fluid for the brake, a fluid passing port provided in the fluid reserving portion of the reserve tank, the fluid passing port having an opening area smaller than an opening cross-sectional area of the fluid reserving portion, and a communicating passage connecting the fluid passing port to the cylinder bore, wherein the reserve tank is provided on an upper end of the master cylinder device such that a longitudinal direction of the reserve tank is substantially orthogonal to a longitudinal axis of the master cylinder body.

Abstract: An object of the present invention is to provide a mass-storage nonvolatile memory device capable of performing high speed operation. The nonvolatile memory device comprises a memory array comprising a plurality of memory cells arranged in a matrix, each of the memory cells comprising a variable resistor element formed of a manganese-containing oxide having a perovskite structure in which an electric resistance is varied by application of a voltage pulse and a variation amount of the electric resistance is variable depending on the magnitude of the voltage amplitude; and a program pulse generation circuit that, in order to program 3-level or larger multi-level data corresponding to one erase state and two or more program states into the variable resistor element, is capable of performing generation of program pulses having two or more different voltage amplitudes corresponding to the program states, the generation being separately performed corresponding to program data.

Abstract: A lockup clutch for a torque converter includes a pump extension, a receiving plate connected to the pump extension defining a hydraulic pressure chamber communicating with a portion between a pump impeller and a turbine impeller, a pressing plate opposed to the receiving plate for movement toward and away from the receiving plate, an annular friction clutch plate interposed between the receiving plate and the pressing plate and connected to the turbine impeller, a return spring for biasing the pressing plate in a retracting direction, and an escape bore permitting the inside and outside of the receiving plate to communicate with each other on the side of an inner periphery of the friction clutch plate. When the rotational speed of the pump impeller is increased to a value equal to or higher than a predetermined value, the pressing plate clamps the friction clutch plate in cooperation with the receiving plate under the action of a centrifugal hydraulic pressure within the hydraulic pressure chamber.

Abstract: A solid laser apparatus has either a combination of a lowpass filter and a highpass filter or a bandpass filter provided in its output control circuit for increasing the gain and adjusting the phase of a signal in the vicinity of the relaxation oscillating frequency. Also, a solid laser apparatus has the phase shift circuit provided in its output control circuit for advancing the phase of a signal in the vicinity of the relaxation oscillating frequency thereof. Moreover, a solid laser apparatus has a pseudo notch filter, which is arranged for the gain to have a local minimum at the relaxation oscillating frequency of the solid laser apparatus, provided in the output control circuit so that the peak of the gain transmission characteristic of the nonlinear optical device or of a combination of the nonlinear optical device and the microchip laser crystal is offset.