Patents by Inventor Koji Kamei

Koji Kamei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10985042
    Abstract: A SiC substrate includes a first principal surface, a second principal surface disposed on a side opposite to the first principal surface, and an outer periphery connected to the first principal surface and the second principal surface, wherein a density of composite defects present at a peripheral edge portion of the SiC substrate, in which a hollow portion and a dislocation line extending from the hollow portion are connected to each other is equal to or greater than 0.01 pieces/cm2 and equal to or less than 10 pieces/cm2.
    Type: Grant
    Filed: October 11, 2019
    Date of Patent: April 20, 2021
    Assignee: SHOWA DENKO K.K.
    Inventors: Yoshitaka Nishihara, Koji Kamei
  • Patent number: 10955350
    Abstract: A SiC wafer defect measuring method which includes a device management step of managing a defect measuring device by irradiating a reference sample made of a material having a light-emitting intensity that does not change with repeated irradiation by excitation light and which has a pattern made of recesses and/or protrusions in the surface, the irradiation by the excitation light being performed before measuring defects in a SiC wafer and under the same irradiation conditions as the measurement of the defects in the SiC wafer, and then measuring the S/N ratio of the pattern from a reflection image of the pattern.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: March 23, 2021
    Assignee: SHOWA DENKO K.K.
    Inventor: Koji Kamei
  • Patent number: 10865500
    Abstract: A SiC epitaxial wafer having a SiC epitaxial layer formed on a SiC single crystal substrate having an offset angle of 4 degrees or less in a<11-20>direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.
    Type: Grant
    Filed: February 16, 2016
    Date of Patent: December 15, 2020
    Assignee: SHOWA DENKO K.K.
    Inventors: Jun Norimatsu, Akira Miyasaka, Yoshiaki Kageshima, Koji Kamei, Daisuke Muto
  • Publication number: 20200284732
    Abstract: A SiC epitaxial wafer, including: a SiC substrate; and an epitaxial layer stacked on a first surface of the SiC substrate, wherein an area occupied by bar-shaped stacking faults on the first surface of the SiC substrate is identified, and the area occupied by bar-shaped stacking faults on the first surface of the SiC substrate is equal to or less than ¼ of the first surface area of the SiC substrate.
    Type: Application
    Filed: May 26, 2020
    Publication date: September 10, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshitaka NISHIHARA, Koji KAMEI
  • Patent number: 10697898
    Abstract: In a SiC substrate evaluation method, a bar-shaped stacking fault is observed by irradiating a surface of a SiC substrate before stacking an epitaxial layer with excitation light and extracting light having a wavelength range from equal to or greater than 405 nm and equal to or less than 445 nm among photoluminescence light beams emitted from the first surface.
    Type: Grant
    Filed: October 10, 2019
    Date of Patent: June 30, 2020
    Assignee: SHOWA DENKO K.K.
    Inventors: Yoshitaka Nishihara, Koji Kamei
  • Publication number: 20200203163
    Abstract: According to the present invention, there is provided a SiC epitaxial wafer including: a 4H-SiC single crystal substrate which has a surface with an off angle with respect to a c-plane as a main surface and a bevel part on a peripheral part; and a SiC epitaxial layer having a film thickness of 20 ?m or more, which is formed on the 4H-SiC single crystal substrate, in which a density of an interface dislocation extending from an outer peripheral edge of the SiC epitaxial layer is 10 lines/cm or less.
    Type: Application
    Filed: May 14, 2018
    Publication date: June 25, 2020
    Applicant: SHOWA DENKO K.K.
    Inventor: Koji KAMEI
  • Publication number: 20200118854
    Abstract: A SIC substrate includes a first principal surface, a second principal surface disposed on a side opposite to the first principal surface, and an outer periphery connected to the first principal surface and the second principal surface, wherein a density of composite defects present at a peripheral edge portion of the SIC substrate, in which a hollow portion and a dislocation line extending from the hollow portion are connected to each other is equal to or greater than 0.01 pieces/cm2 and equal to or less than 10 pieces/cm2.
    Type: Application
    Filed: October 11, 2019
    Publication date: April 16, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshitaka NISHIHARA, Koji KAMEI
  • Publication number: 20200116649
    Abstract: In a SiC substrate evaluation method, a bar-shaped stacking fault is observed by irradiating a surface of a SiC substrate before stacking an epitaxial layer with excitation light and extracting light having a wavelength range from equal to or greater than 405 nm and equal to or less than 445 nm among photoluminescence light beams emitted from the first surface.
    Type: Application
    Filed: October 10, 2019
    Publication date: April 16, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshitaka NISHIHARA, Koji KAMEI
  • Publication number: 20190331603
    Abstract: A SiC wafer defect measuring method which includes a device management step of managing a defect measuring device by irradiating a reference sample made of a material having a light-emitting intensity that does not change with repeated irradiation by excitation light and which has a pattern made of recesses and/or protrusions in the surface, the irradiation by the excitation light being performed before measuring defects in a SiC wafer and under the same irradiation conditions as the measurement of the defects in the SiC wafer, and then measuring the S/N ratio of the pattern from a reflection image of the pattern.
    Type: Application
    Filed: December 7, 2017
    Publication date: October 31, 2019
    Applicant: SHOWA DENKO K.K.
    Inventor: Koji KAMEI
  • Publication number: 20190187068
    Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm2, and wherein a density of large pit defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.5 defects/cm2 or less.
    Type: Application
    Filed: August 21, 2017
    Publication date: June 20, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Ling GUO, Koji KAMEI
  • Publication number: 20190177876
    Abstract: A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H-SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 2.5 inclusions/cm2, wherein a total density of large pit defects and triangular defects caused by substrate carbon inclusions and contained in the SiC epitaxial layer is 0.6 defects/cm2 or less.
    Type: Application
    Filed: August 21, 2017
    Publication date: June 13, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Ling GUO, Koji KAMEI
  • Publication number: 20190172758
    Abstract: An evaluation method of a SiC epitaxial wafer includes: a first observation step of preparing a SiC epitaxial wafer having a high-concentration epitaxial layer having an impurity concentration of 1×1018 cm?3 or more, irradiating a surface of the high-concentration epitaxial layer having an impurity concentration of 1×1018 cm?3 or more with excitation light, and observing a surface irradiated with the excitation light via a band-pass filter having a wavelength band of 430 nm or less.
    Type: Application
    Filed: December 3, 2018
    Publication date: June 6, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshitaka NISHIHARA, Koji KAMEI
  • Patent number: 10065321
    Abstract: A robot service cooperation system (10) includes a server (12), a mobile terminal (14) and various robots (16a-16c) respectively connected to a network (100). Each of applications (A1, A2, A3, - - - ) on the network is written with cooperation information indicating that which other application can be cooperated with. A CPU (20) of the server specifies (S3) at least based on the cooperation information a plurality of cooperable services that can be provided to a user of the mobile terminal, presents (S7) the specified plurality of services to the user and makes (S13) the user select an arbitrary combination, and makes (S17, S19) a plurality of services constituting the selected combination cooperate mutually by registering at least a start condition of each service into an event queue in association with at least an end event of another service.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: September 4, 2018
    Assignee: Advanced Telecommunications Research Institute International
    Inventors: Takahiro Miyashita, Koji Kamei, Kazuhiko Shinozawa, Norihiro Hagita, Tadahisa Kondo
  • Publication number: 20180016706
    Abstract: An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a <11-20> direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.
    Type: Application
    Filed: February 16, 2016
    Publication date: January 18, 2018
    Applicant: SHOWA DENKO K.K.
    Inventors: Jun NORIMATSU, Akira MIYASAKA, Yoshiaki KAGESHIMA, Koji KAMEI, Daisuke MUTO
  • Patent number: 9359753
    Abstract: A flush toilet which including a bowl portion having a waste-receiving surface, a rim and a recess; a water spouting portion for spouting the flush water forwardly; and a drainage conduit. The recess of the bowl portion has a bottom below a pooled water level, and a wall surface connecting between the bottom and a lower edge of the waste-receiving surface, wherein the bottom of the recess has a front bottom surface and a rear bottom surface. The bowl portion is configured to allow flush water to form a major stream which is directed to flow from an front end of the bowl portion toward the inlet of the drainage conduit, and the rear bottom surface of the bottom is configured to allow a part of the major stream to collide therewith, and then guide the collided major stream to a front region inside the drainage conduit.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: June 7, 2016
    Assignee: TOTO LTD.
    Inventors: Tomohiro Hirakawa, Masaki Kitamura, Shu Kashirajima, Yuki Shinohara, Koji Kamei
  • Publication number: 20160046025
    Abstract: A robot service cooperation system (10) includes a server (12), a mobile terminal (14) and various robots (16a-16c) respectively connected to a network (100). Each of applications (A1, A2, A3, - - - ) on the network is written with cooperation information indicating that which other application can be cooperated with. A CPU (20) of the server specifies (S3) at least based on the cooperation information a plurality of cooperable services that can be provided to a user of the mobile terminal, presents (S7) the specified plurality of services to the user and makes (S13) the user select an arbitrary combination, and makes (S17, S19) a plurality of services constituting the selected combination cooperate mutually by registering at least a start condition of each service into an event queue in association with at least an end event of another service.
    Type: Application
    Filed: March 14, 2014
    Publication date: February 18, 2016
    Inventors: Takahiro Miyashita, Koji Kamei, Kazuhiko Shinozawa, Norihiro Hagita, Tadahisa Kondo
  • Patent number: 9157225
    Abstract: A flush toilet which includes: a bowl portion having a waste-receiving surface, a rim and a recess; a first rim spout portion which spouts flush water toward a front end of the bowl portion so as to form a swirl flow; and a second rim spout portion which spouts flush water so as to form a swirl flow having a same flow direction as that of the swirl flow formable by the first rim spout portion. The bowl portion is configured to allow flush water spouted from the first rim spout portion to form a major stream which flows from the front end of the bowl portion into the recess, and allow flush water spouted from the second rim spout portion to flow into the recess from a lateral side of the bowl portion and then merge with the major stream M.
    Type: Grant
    Filed: March 26, 2014
    Date of Patent: October 13, 2015
    Assignee: TOTO LTD.
    Inventors: Shu Kashirajima, Tomohiro Hirakawa, Masaki Kitamura, Yuki Shinohara, Koji Kamei
  • Publication number: 20150082531
    Abstract: A flush toilet which includes: a bowl portion having a waste-receiving surface, a rim and a recess; a first rim spout portion which spouts flush water toward a front end of the bowl portion so as to form a swirl flow; and a second rim spout portion which spouts flush water so as to form a swirl flow having a same flow direction as that of the swirl flow formable by the first rim spout portion. The bowl portion is configured to allow flush water spouted from the first rim spout portion to form a major stream which flows from the front end of the bowl portion into the recess, and allow flush water spouted from the second rim spout portion to flow into the recess from a lateral side of the bowl portion and then merge with the major stream M.
    Type: Application
    Filed: March 26, 2014
    Publication date: March 26, 2015
    Applicant: TOTO LTD.
    Inventors: Shu KASHIRAJIMA, Tomohiro HIRAKAWA, Masaki KITAMURA, Yuki SHINOHARA, Koji KAMEI
  • Patent number: 8866186
    Abstract: The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device. The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.
    Type: Grant
    Filed: September 20, 2006
    Date of Patent: October 21, 2014
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Gaku Oriji, Koji Kamei, Hisayuki Miki, Akihiro Matsuse
  • Publication number: 20140289947
    Abstract: A flush toilet which including a bowl portion having a waste-receiving surface, a rim and a recess; a water spouting portion for spouting the flush water forwardly; and a drainage conduit. The recess of the bowl portion has a bottom below a pooled water level, and a wall surface connecting between the bottom and a lower edge of the waste-receiving surface, wherein the bottom of the recess has a front bottom surface and a rear bottom surface. The bowl portion is configured to allow flush water to form a major stream which is directed to flow from an front end of the bowl portion toward the inlet of the drainage conduit, and the rear bottom surface of the bottom is configured to allow a part of the major stream to collide therewith, and then guide the collided major stream to a front region inside the drainage conduit.
    Type: Application
    Filed: March 26, 2014
    Publication date: October 2, 2014
    Applicant: TOTO LTD.
    Inventors: Tomohiro HIRAKAWA, Masaki KITAMURA, Shu KASHIRAJIMA, Yuki SHINOHARA, Koji KAMEI