Abstract: The present disclosure relates to a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer. An embodiment of the disclosure includes a gallium nitride-based compound semiconductor light-emitting device, which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, which may be formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and a region having a semiconductor metal concentration of 20 at. % or more, based on all metals, is present in the transparent electrically conducting film on the semiconductor side surface of the transparent electrically conducting film.

Abstract: An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

Abstract: The present disclosure relates to a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer. An embodiment of the disclosure includes a gallium nitride-based compound semiconductor light-emitting device, which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, which may be formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and a region having a semiconductor metal concentration of 20 at. % or more, based on all metals, is present in the transparent electrically conducting film on the semiconductor side surface of the transparent electrically conducting film.

Abstract: The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device. The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.

Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency. The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.

Abstract: A gallium nitride-based compound semiconductor light-emitting device having an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed in this order on a substrate. Each layer includes a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and on the p-type semiconductor layer, respectively, the positive electrode is at least partially formed of a transparent electrically conducting film, the transparent electrically conducting film is at least partially in contact with the p-type semiconductor layer, a semiconductor metal mixed layer containing a Group III metal component is present on the semiconductor side surface of the transparent electrically conducting film, and the thickness of the semiconductor metal mixed layer is from 0.1 to 10 nm.

Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a positive electrode which comprises a first electrode and an over-coating layer covering the side surfaces and upper surface of the first electrode provided on a p-type semiconductor layer, the over-coating layer tending not to be exfoliated from the p-type semiconductor layer.

Abstract: A gallium nitride-based compound semiconductor light-emitting device which has a highly reflective positive electrode that has high reverse voltage and excellent reliability with low contact resistance to the p-type gallium nitride-based compound semiconductor layer. The reflective positive electrode for a semiconductor light-emitting device comprises a contact metal layer adjoining a p-type semiconductor layer, and a reflective layer on the contact metal layer, wherein the contact metal layer is formed of a platinum group metal or an alloy containing a platinum group metal, and the reflective layer is formed of at least one metal selected from the group consisting of Ag, Al, and alloys containing at least one of Ag and Al. Also disclosed is a production method of the reflective positive electrode.

Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer.

Abstract: An object of the present invention is to provide a positive electrode, in which the silver is used, for a compound-semiconductor light-emitting device high in inverse voltage and excellent in stability and productivity. The inventive positive electrode for a compound-semiconductor light-emitting device comprises a reflective layer of a silver alloy.

Abstract: The present invention relates to a process for producing a water-based pigment dispersion which includes a first step of mixing (A) an emulsion composition including a water-insoluble polymer having a specific weight-average molecular weight and containing a salt-forming group, an organic solvent having a specific solubility in water, a neutralizing agent and water, with (B) a pigment to obtain a preliminary dispersion having a content of non-volatile components of from 5 to 50% by weight and a weight ratio of the organic solvent to water [organic solvent/water] of from 0.1 to 0.

Abstract: A gallium nitride-based compound semiconductor light-emitting device is disclosed which includes an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and has a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively. The negative electrode includes a bonding pad layer and a contact metal layer which is in contact with the n-type semiconductor layer, and the contact metal layer is composed of a Cr—Al alloy.

Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency. The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.

Abstract: This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

Abstract: It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device which has a highly reflective positive electrode that has high reverse voltage and excellent reliability with low contact resistance to the p-type gallium nitride-based compound semiconductor layer. The inventive reflective positive electrode for a semiconductor light-emitting device comprises a contact metal layer adjoining a p-type semiconductor layer, and a reflective layer on the contact metal layer, wherein the contact metal layer is formed of a platinum group metal or an alloy containing a platinum group metal, and the reflective layer is formed of at least one metal selected from the group consisting of Ag, Al, and alloys containing at least one of Ag and Al.

Abstract: A gallium nitride-based compound semiconductor light-emitting device which includes an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and has a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively; wherein the negative electrode includes a bonding pad layer and a contact metal layer which is in contact with the n-type semiconductor layer, and the contact metal layer is composed of Cr or a Cr alloy and formed through sputtering.

Abstract: An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

Abstract: An object of the present invention is to provide a positive electrode, in which the silver is used, for a compound-semiconductor light-emitting device high in inverse voltage and excellent in stability and productivity. The inventive positive electrode for a compound-semiconductor light-emitting device comprises a reflective layer of a silver alloy.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor light-emitting device having a positive electrode that exhibits low contact resistance with a p-type gallium nitride compound semiconductor layer and that can be fabricated with high productivity.

Abstract: A stopper member 54 is fixed to an inner column 3a, and a second displacement preventing protruding portion 57 provided in the stopper member 54 is opposed to a bolt 42 fixed to an outer column 2b. In the case where a load not less than a predetermined value is given from the bolt 42 to the second displacement preventing protruding portion 57, the second displacement preventing protruding portion 57 is deformed and the thus deformed portion is withdrawn into an accommodating recess portion 60 provided in the stopper member 54. A plate spring made of conductive material is elastically pressed to the stopper member 54 and the outer column 2b in the circumferential direction of the outer column 2b.