Abstract: A plasma processing apparatus includes: a processing container; a ceiling plate that constitutes a ceiling wall of the processing container, is formed of a first dielectric, and has an opening formed in the first dielectric; at least one transmissive window disposed in the opening and formed of a second dielectric having a second permittivity greater than a first permittivity of the first dielectric; and at least one electromagnetic wave supplier configured to supply electromagnetic waves toward the at least one transmissive window.

Abstract: Provided is a plasma film-firming apparatus including: a chamber configured to accommodate a substrate therein; a substrate pedestal configured to disposed the substrate thereon within the chamber; a gas supply mechanism configured to supply a gas including a film-forming gas into the chamber; an exhaust mechanism configured to exhaust an inside of the chamber; and a plasma generating unit configured to generate plasma in the chamber. The substrate pedestal includes a pedestal body having a smaller diameter than that of the substrate and including a placement surface, and an annular adjustment member disposed outside the pedestal body. The adjustment member is replaceably installed. A plurality of adjustment members having various steps are provided at a position outside the substrate as the adjustment member, and among the plurality of adjustment members, an adjustment member is selected and used according to a processing condition of a plasma processing.

Abstract: Disclosed is a microwave plasma source including a microwave generator that generates microwaves; a waveguide that propagates the microwaves in a TE mode; a microwave converter including a conversion port that converts a vibration mode of the microwaves guided from the waveguide from the TE mode into a TEM mode, and a coaxial waveguide that propagates the microwaves from the conversion port toward the chamber and converts a remaining TE mode component into the TEM mode during the propagation; a planar antenna including a plurality of slots that radiate the microwaves guided to the coaxial waveguide toward the chamber; and a microwave transmitting plate made of a dielectric material that transmits the microwaves radiated from the plurality of slots of the planar antenna to the chamber. A length of the coaxial waveguide is equal to or longer than a wavelength of the microwaves generated from the microwave generator.

Abstract: Provided is a plasma film-firming apparatus including: a chamber configured to accommodate a substrate therein; a substrate pedestal configured to disposed the substrate thereon within the chamber; a gas supply mechanism configured to supply a gas including a film-forming gas into the chamber; an exhaust mechanism configured to exhaust an inside of the chamber; and a plasma generating unit configured to generate plasma in the chamber. The substrate pedestal includes a pedestal body having a smaller diameter than that of the substrate and including a placement surface, and an annular adjustment member disposed outside the pedestal body. The adjustment member is replaceably installed. A plurality of adjustment members having various steps are provided at a position outside the substrate as the adjustment member, and among the plurality of adjustment members, an adjustment member is selected and used according to a processing condition of a plasma processing.

Abstract: There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

Abstract: A processing method performs a predetermined process to an object by supplying a process gas at a prescribed flow rate into a process container to which a gas supply unit and an exhaust system are connected. The processing method includes a first process of setting the gas supply unit to supply a process gas at a flow rate greater than the prescribed flow rate of a predetermined process for a predetermined short time from a gas channel while exhausting an atmosphere in the process container through the exhaust system; and a second process of setting the gas supply unit to supply the process gas at the prescribed flow rate from the gas channel after the first process is completed.

Abstract: A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.

Abstract: A first flow passage (16), which cools a temperature controlled object by a circulating first cooling water (15), and a second flow passage (19) separate from the first flow passage are provided so as to exchange heat between a second cooling water (18) flowing through the second flow passage (19) and the first cooling water (15). There is no need to store the first cooling water (15) in a tank of a constant capacity, and the first cooling water (15) flowing through the first flow passage (16) of a chiller corresponding part is absorbed substantially in its entirety by the second cooling water (18). A response becomes quick with respect to a load fluctuation of the temperature controlled object, and waste of energy can be reduced while improving accuracy of temperature control.

Abstract: There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

Abstract: A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor.

Abstract: A metallic separator in which falling off of the conductive inclusions projecting from a matrix surface is prevented, whereby the contact resistance is decreased, resulting in increasing the characteristics for generation of electrical energy. A metallic separator for a fuel cell comprises conductive inclusions in a metal structure, and the conductive inclusions project from a surface of a matrix to a height of 1 to 3 micrometers.

Abstract: A processing apparatus includes a process container having a placing table for placing a processing object, an exhaust system having vacuum pumps and a pressure control valve for exhausting atmosphere in the process container. A gas injection unit having a gas ejection hole is provided in the process container, as well as a gas supplying unit for supplying a process gas to the gas injection unit. The entire process apparatus is controlled by a controlling unit. The control unit controls the exhaust system and the gas supplying unit. When starting a predetermined process, the process gas at a flow rate greater than a prescribed flow rate is supplied for a short time while exhausting the atmosphere in the process container by the exhaust system, and then the process gas at a prescribed flow rate is supplied.

Abstract: There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

Abstract: A metallic separator according to a first embodiment is formed by obtaining a blank by rolling a metallic material having conductive inclusions, and removing a surface of the blank by 2% or more of the thickness of the blank. A metallic separator according to a second embodiment is formed by pressing a metallic plate so as to have a cross section including ridges and grooves alternatively, and removing parts of the ridged portions so as to make flattened surfaces. A metallic separator having conductive inclusions in its metal texture according to a third embodiment is formed by blasting a liquid containing two or more kinds of abrasives having different particle diameters to a blank after it has been rolled. A metallic separator having conductive inclusion in its metal texture according to a fourth embodiment is formed by blasting a passivation treatment liquid mixed with abrasives to the separator.

Abstract: A substrate processing system comprises a plurality of CVD processing units (15a-15c) and one refrigerator (101). A supply line (102) for supplying a cooling medium from the refrigerator to the CVD processing units, and a feedback line (103) for feeding the cooling medium back to the refrigerator from the processing units are laid in the system. The cooling medium from the refrigerator is thus distributively fed to the processing units. Circuits (104a-104c) are laid out in rod stages (33), objects of temperature control, in the respective processing units. Each circuit is connected to the supply line and to the feedback line. The cooling medium is circulated around the circuits to control the temperatures of the rod stages stably. When the temperature of the rod stage rises, the cooling medium at a low temperature is taken in the circuit from the supply line to cool the rod stage.

Abstract: The data analysis device 100 includes: difference calculation means (S2) for, with respect to an image, carrying out a calculation of calculating a difference between intensity values at an arbitrary point in the image and a point located in the vicinity of the arbitrary point in a first direction as a first intensity difference of the arbitrary point and of calculating a difference between intensity values at the arbitrary point and a point located in the vicinity of the arbitrary point in a second direction different from the first direction as a second intensity difference of the arbitrary point, the difference calculation means carrying out the calculation with respect to each of a plurality of points in the image; and frequency distribution generation means (S3 to S5) for quantizing a vector comprising the first intensity difference and the second intensity difference obtained by the difference calculation means for each of the plurality of points in the image into a single region of a plurality of regio

Abstract: The plasma processing apparatus includes: a processing container 11 having a holding stage 13 that holds a substrate 12 to be processed; a micro-wave transmission window 17 provided on or above the processing container, opposite to the substrate to be processed placed on the holding stage; a micro-wave antenna 20 provided above the processing container correspondingly to the micro-wave transmission window for supplying a micro-wave into the processing container; and a micro-wave electric power supplying source 32 connected to the micro-wave antenna. The plasma processing apparatus further includes an electric-field measuring unit 25, 26 that measures electric field strength of the micro-wave supplied by the micro-wave antenna, and a controlling unit 32a, 50A that controls the micro-wave electric power supplying source based on the electric field strength measured by the electric-field measuring unit. This enables a stable substrate process.

Abstract: A metallic separator according to a first embodiment is formed by obtaining a blank by rolling a metallic material having conductive inclusions, and removing a surface of the blank by 2% or more of the thickness of the blank. A metallic separator according to a second embodiment is formed by pressing a metallic plate so as to have a cross section including ridges and grooves alternatively, and removing parts of the ridged portions so as to make flattened surfaces. A metallic separator having conductive inclusions in its metal texture according to a third embodiment is formed by blasting a liquid containing two or more kinds of abrasives having different particle diameters to a blank after it has been rolled. A metallic separator having conductive inclusion in its metal texture according to a fourth embodiment is formed by blasting a passivation treatment liquid mixed with abrasives to the separator.

Abstract: A metallic separator according to a first embodiment is formed by obtaining a blank by rolling a metallic material having conductive inclusions, and removing a surface of the blank by 2% or more of the thickness of the blank. A metallic separator according to a second embodiment is formed by pressing a metallic plate so as to have a cross section including ridges and grooves alternatively, and removing parts of the ridged portions so as to make flattened surfaces. A metallic separator having conductive inclusions in its metal texture according to a third embodiment is formed by blasting a liquid containing two or more kinds of abrasives having different particle diameters to a blank after it has been rolled. A metallic separator having conductive inclusion in its metal texture according to a fourth embodiment is formed by blasting a passivation treatment liquid mixed with abrasives to the separator.

Abstract: A first flow passage (16), which cools a temperature controlled object by a circulating first cooling water (15), and a second flow passage (19) separate from the first flow passage are provided so as to exchange heat between a second cooling water (18) flowing through the second flow passage (19) and the first cooling water (15). There is no need to store the first cooling water (15) in a tank of a constant capacity, and the first cooling water (15) flowing through the first flow passage (16) of a chiller corresponding part is absorbed substantially in its entirety by the second cooling water (18). A response becomes quick with respect to a load fluctuation of the temperature controlled object, and waste of energy can be reduced while improving accuracy of temperature control.