Abstract: A method of manufacturing a semiconductor device includes: forming a lower electrode made of a Ti-containing film on a substrate; forming a niobium oxide film on the lower electrode; forming an oxide-based high-dielectric-constant film on the niobium oxide film; forming an upper electrode on the oxide-based high-dielectric-constant film; and performing annealing, wherein, through the forming of the oxide-based high-dielectric-constant film, the forming of the upper electrode, and the performing of the annealing, the niobium oxide film is modified into a low-oxidation-number niobium oxide film that is primarily made of a niobium oxide with an oxidation number lower than Nb2O5.

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: A film forming method includes forming a cancel layer on a substrate, which is disposed within a processing container and on which a base film is formed, in a pressure-reduced atmosphere, the cancel layer cancelling orientation of the base film, forming an initial metal film by supplying a metal material gas and a boron-containing gas to the substrate on which the cancel layer is formed, and forming a main metal film on the substrate on which the initial metal film is formed.

Abstract: There is provided a film forming method including: forming an Al-containing film on a base in a depressurized state; and subsequently, forming an initial tungsten film on the Al-containing film by alternately supplying a B2H6 gas and a WF6 gas in a repetitive manner in the depressurized state without exposing the Al-containing film to an atmosphere while performing a purge process between the supply of the B2H6 gas and the supply of the WF6 gas.

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: A film forming method includes a step of disposing a substrate on which an insulating film is formed in a processing container and forming a base film by repeatedly supplying a Ti-containing gas, an Al-containing gas, and a reaction gas into the processing container under a decompressed atmosphere; and a step of forming a metal layer made of a metal material on the substrate on which the base film is formed.

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: A method of forming a tungsten film having low resistance is provided. The method includes forming a discontinuous film containing a metal on a substrate; and forming the tungsten film on the substrate on which the discontinuous film is formed. In the forming of the discontinuous film, a first source gas and a nitriding gas are supplied onto the substrate alternately along with, for example, a carrier gas. In the forming of the tungsten film, a second source gas and a reducing gas are supplied onto the substrate alternately along with, for example, a carrier gas.

Abstract: A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.

Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of nobel gas and has the noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.

Abstract: There is provided a film forming method including: forming an initial tungsten film on a base film formed on a substrate by alternately supplying a B2H6 gas and a WF6 gas while supplying a carrier gas into a processing container in a state in which the substrate is heated to a first temperature within the processing container maintained in a depressurized state; and forming a main tungsten film on the initial tungsten film by alternately supplying a tungsten-containing gas and a reducing gas for reducing the tungsten-containing gas into the processing container in a state in which the substrate is heated to a second temperature higher than the first temperature within the processing container maintained in the depressurized state.

Abstract: There is provided a film forming method including: forming an Al-containing film on a base in a depressurized state; and subsequently, forming an initial tungsten film on the Al-containing film by alternately supplying a B2H6 gas and a WF6 gas in a repetitive manner in the depressurized state without exposing the Al-containing film to an atmosphere while performing a purge process between the supply of the B2H6 gas and the supply of the WF6 gas.

Abstract: A film forming method includes forming a cancel layer on a substrate, which is disposed within a processing container and on which a base film is formed, in a pressure-reduced atmosphere, the cancel layer cancelling orientation of the base film, forming an initial metal film by supplying a metal material gas and a boron-containing gas to the substrate on which the cancel layer is formed, and forming a main metal film on the substrate on which the initial metal film is formed.

Abstract: An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. Then, the sidewall spacers over the side surfaces of the insulating films corresponding to the sidewalls of the first and second gate electrodes are removed to leave the sidewall spacers over the side surfaces of the insulating film corresponding to the sidewalls of the third gate electrode. Then, the sidewall spacers and the insulating films are etched back, so that the sidewall spacers are formed of the insulating film over the sidewalls of the first, second, and third gate electrodes.

Abstract: There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

Abstract: There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.

Abstract: A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.

Abstract: There is provided a method for forming a metal film on a target substrate having a complex-shaped portion and a flat portion, the target substrate being loaded into a chamber which is maintained under a depressurized atmosphere, by sequentially supplying a metal chloride gas as a raw material gas and a reduction gas for reducing a metal chloride into the chamber while purging the chamber in the course of sequentially supplying the metal chloride gas and the reduction gas, the method including: forming a first metal film by supplying the metal chloride gas at a relatively low flow rate; and forming a second metal film by supply the metal chloride gas at a relatively high flow rate.

Abstract: There is provided a tungsten film forming method which includes: forming a first tungsten film on a substrate; and forming a second tungsten film on the first tungsten film. The forming a first tungsten film includes alternately supplying a first raw material gas containing tungsten and a diborane gas together with a first carrier gas to the substrate. The forming a second tungsten film includes alternately supplying a second raw material gas containing tungsten and a hydrogen gas together with a second carrier gas to the substrate on which the first tungsten film is formed. The first carrier gas is a nitrogen gas. The second carrier gas includes at least one kind of inert gas and has a noble gas at a flow rate of 70% or more with respect to a total flow rate of the second carrier gas.