Abstract: According to one embodiment, a fabrication method of a semiconductor device comprising forming a dummy gate with a gate length direction set to a [111] direction perpendicular to a [110] direction on a surface of a supporting substrate having Si1-xGex (0?x<0.5) with a crystal orientation perpendicular to the surface set to the [110] direction on the surface, forming source/drain regions and forming insulating films on side portions of the dummy gate. Next, the dummy gate is etched with using the insulating films as a mask, and a surface portion of the substrate between the source/drain regions is further etched. Next, a channel region formed of a III-V group semiconductor or Ge is grown between the source/drain regions by using the edge portions of the source/drain regions as seeds. Then, a gate electrode is formed above the channel region via a gate insulating film.

Abstract: According to one embodiment, a storage device includes a plurality of memory nodes. Each of memory nodes includes a plurality of input ports, a plurality of output ports, a selector, a packet controller and a memory. The selector outputs a packet input to the input port to one of the output ports. The packet controller controls the selector. The memory stores data. The memory nodes are mutually connected at the input ports and the output ports. The memory node has an address that is determined by its physical position. The packet controller switches the output port that outputs the packet based on information including at least a destination address of the packet and an address of the memory node having the packet controller when receiving a packet that is not addressed to the memory node having the packet controller.

Abstract: According to one embodiment, a storage device includes an interface, a first and second memory blocks and a controller. The interface receives a content search request. The first memory block stores files and inverted files corresponding to contents included in the files. The second memory block stores a file search table. The controller creates the inverted file for each content included in the files and stores IDs of the files including the content in the inverted file. The controller obtains, by search of the content, a corresponding inverted file from the inverted files stored in the first memory block and stores, in the file search table, the IDs of the files included in the obtained inverted file. The controller outputs the IDs of the files stored in the file search table from the interface as a search result for the content search request.

Abstract: A semiconductor device includes a semiconductor substrate, a p-channel MIS transistor formed on the substrate, the p-channel transistor having a first gate dielectric formed on the substrate and a first gate electrode layer formed on the first dielectric, and an n-channel MIS transistor formed on the substrate, the n-channel transistor having a second gate dielectric formed on the substrate and a second gate electrode layer formed on the second dielectric. A bottom layer of the first gate electrode layer in contact with the first gate dielectric and a bottom layer of the second gate electrode layer in contact with the second gate dielectric have the same orientation and the same composition including Ta and C, and a mole ratio of Ta to a total of C and Ta, (Ta/(Ta+C)), is larger than 0.5.