Abstract: A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.

Abstract: An adversarial example detection system capable of detecting adversarial examples at a low computational cost is provided. The preparation unit 100 calculates an inverse matrix of a Gram matrix that is used in a process of approximating a deep learner to a Gaussian process. The output distribution calculation unit 222 calculates mean and variance of output values that are numerical values used for class determination for each class by using the inverse matrix of the Gram matrix, for each input observation data. The probabilistic margin calculation unit 223 calculates a probabilistic margin that is an index of variability of the output values based on the mean and variance of the output values, for each input observation data. The adversarial example detection unit 224 detects the adversarial example from the input observation data based on the probabilistic margin calculated for each input observation data.

Abstract: There is provided a semiconductor device including: an emitter region of a first conductivity type, a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate; one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions; a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, is in contact with the contact region of the second conductivity type, and is not in contact with the emitter region; and a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode, in which the contact region in contact with the second trench portion is in contact with the emitter electrode.

Abstract: A model building apparatus includes: a building unit that builds a generation model that outputs an adversarial example, which causes misclassification by a learned model, when a source sample is entered into the generation model; and a calculating unit that calculates a first evaluation value and a second evaluation value, wherein the first evaluation value is smaller as a difference is smaller between an actual visual feature of the adversarial example outputted from the generation model and a target visual feature of the adversarial example that are set to be different from a visual feature of the source sample, and the second evaluation value is smaller as there is a higher possibility that the learned model misclassifies the adversarial example outputted from the generation model. The building unit builds the generation model by updating the generation model such that an index value based on the first and second evaluation values is smaller.

Abstract: A display device includes a display configured to display a deterioration degree of a secondary battery and a controller. The controller is configured to control the display such that the display does not display the deterioration degree when the deterioration degree is lower than a first level, or configured to control the display such that the display does not display the deterioration degree when the deterioration degree is higher than a second level that is higher than the first level.

Abstract: A display device includes a display configured to display a deterioration degree of a secondary battery and a controller. The controller is configured to control the display such that the display does not display the deterioration degree when the deterioration degree is lower than a first level, or configured to control the display such that the display does not display the deterioration degree when the deterioration degree is higher than a second level that is higher than the first level.

Abstract: An abnormality detection apparatus (200) includes storage means (210) for storing a learned self-encoder (211) including predetermined number of two or more of elements as input layers, extraction means (220) for extracting a target data group of a predetermined period including data pieces from time series data measured by one or more sensors, the number of the data pieces being the predetermined number, conversion means (230) for converting the target data group into multi-dimensional vector data including the predetermined number of elements, identifying means (240) for identifying a time period in which there may be a cause of an abnormality from the predetermined period based on a difference between output vector data having the predetermined number of elements obtained by inputting the multi-dimensional vector data to the self-encoder (211) and the multi-dimensional vector data, and output means (250) for outputting abnormality detection information including the identified time period.

Abstract: Provided is a semiconductor apparatus including: a first peak of a hydrogen chemical concentration disposed on the lower surface side of the semiconductor substrate; and a flat portion disposed on the upper surface side of the semiconductor substrate with respect to the first peak, containing a hydrogen donor, and having a substantially (almost) flat donor concentration distribution in a depth direction. An oxygen contribution ratio indicating a ratio of an oxygen chemical concentration contributing to generation of the hydrogen donor in the oxygen chemical concentration of the oxygen ranges from 1×10?5 to 7×10?4. A concentration of the oxygen contributing to generation of the hydrogen donor in the flat portion is lower than the hydrogen chemical concentration. A hydrogen donor concentration in the flat portion ranges from 2×1012/cm3 to 5×1014/cm3.

Abstract: There is provided a semiconductor device including: an emitter region of a first conductivity type, a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate; one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions; a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, is in contact with the contact region of the second conductivity type, and is not in contact with the emitter region; and a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode, in which the contact region in contact with the second trench portion is in contact with the emitter electrode.

Abstract: A semiconductor device having a semiconductor substrate that includes a first-conductivity-type substrate and a first-conductivity-type epitaxial layer, and a plurality of trenches reaching a predetermined depth from a main surface of the semiconductor substrate to terminate in the first-conductivity-type epitaxial layer. The semiconductor substrate includes a hydrogen-donor introduced part, of which a concentration of a hydrogen donor is greatest at a depth position that is separate from bottoms of the trenches by a distance at least two times of the depth of the trenches. The impurity concentration of an impurity dopant of the first-conductivity-type substrate being lower than that of the first-conductivity-type epitaxial layer.

Abstract: Provided is a semiconductor apparatus comprising: an emitter region having a first conductivity type provided on a front surface of a semiconductor substrate; a first gate trench part and a second gate trench part in contact with the emitter region; a first emitter non-contact trench part and a second emitter non-contact trench part out of contact with the emitter region; a gate pad for setting the first gate trench part, the second gate trench part, the first emitter non-contact trench part, and the second emitter non-contact trench part to gate potential; and a diode having an anode connected to the gate pad and a cathode connected to the first emitter non-contact trench part and the second emitter non-contact trench part, wherein the first gate trench part, the first emitter non-contact trench part, the second gate trench part, and the second emitter non-contact trench part are adjacently arranged in order.

Abstract: To enable a user to easily recognize temporal order of elements included in a retrieval sentence, a retrieval sentence utilization device 10 includes: a retrieval sentence division unit 11 for dividing a retrieval sentence into a plurality of retrieval contents each of which includes an event; and a directed graph generation unit 12 for generating, from each of the retrieval contents, a subtree in which the event is an edge and a source of the event and an object of the event are nodes, and integrating a plurality of subtrees generated from the retrieval contents to generate a directed graph, wherein the directed graph generation unit 12 places the plurality of subtrees in the directed graph according to occurrence order of events corresponding to the plurality of subtrees.

Abstract: A display device includes a display configured to display a deterioration degree of a secondary battery and a controller. The controller is configured to control the display such that the display does not display the deterioration degree when the deterioration degree is lower than a first level, or configured to control the display such that the display does not display the deterioration degree when the deterioration degree is higher than a second level that is higher than the first level.

Abstract: An information processing apparatus including: a communicator; and a processor configured to receive help request information that is information for requesting help and positional information of a user terminal of a user in a vehicle from the user terminal via the communicator, based on the positional information of the user terminal, identify a first advertisement display apparatus that is located within a predetermined distance range from the user terminal and satisfies a predetermined condition, and transmit an instruction to display a help request message corresponding to the help request information, to the first advertisement display apparatus via the communicator is provided.

Abstract: A semiconductor device having a semiconductor substrate that includes a first-conductivity-type substrate and a first-conductivity-type epitaxial layer, and a plurality of trenches reaching a predetermined depth from a main surface of the semiconductor substrate to terminate in the first-conductivity-type epitaxial layer. The semiconductor substrate includes a hydrogen-donor introduced part, of which a concentration of a hydrogen donor is greatest at a depth position that is separate from bottoms of the trenches by a distance at least two times of the depth of the trenches. The impurity concentration of an impurity dopant of the first-conductivity-type substrate being lower than that of the first-conductivity-type epitaxial layer.

Abstract: An information processing apparatus (2000) classifies each event that occurred in a target apparatus to be determined (10) either as an event (event of a first class) that also occurs in a standard apparatus (20) or as an event (event of a second class) that does not occur in the standard apparatus (20). Herein, a first model used for a determination with respect to an event that also occurs in the standard apparatus (20) and a second model used for a determination with respect to an event that does not occur in the standard apparatus (20) are used as models for determining whether an event that occurs in a target apparatus to be determined (10) is a target for warning. The information processing apparatus (2000) performs learning of the first model using an event of the first class. Further, the information processing apparatus (2000) performs learning of the second model using an event of the second class.

Abstract: A semiconductor device includes an edge terminal structure portion provided between the active portion and an end portion of the semiconductor substrate on an upper surface of the semiconductor substrate, in which the edge terminal structure portion has a first high concentration region of the first conductivity type which has a donor concentration higher than a doping concentration of the bulk donor in a region between the upper surface and a lower surface of the semiconductor substrate, an upper surface of the first high concentration region is located on an upper surface side of the semiconductor substrate, and a lower surface of the first high concentration region is located on a lower surface side of the semiconductor substrate.

Abstract: There is provided a semiconductor device including: an emitter region of a first conductivity type, a contact region of a second conductivity type, provided on the front surface side of the semiconductor substrate; one or more first trench portions which are electrically connected to a gate electrode and are in contact with emitter regions; a second trench portion which is adjacent to one of the one or more first trench portions, is electrically connected to the gate electrode, is in contact with the contact region of the second conductivity type, and is not in contact with the emitter region; and a dummy trench portion which is adjacent to one of the one or more first trench portions and is electrically connected to an emitter electrode, in which the contact region in contact with the second trench portion is in contact with the emitter electrode.

Abstract: An information processing apparatus including: a communicator; and a processor configured to receive help request information that is information for requesting help and positional information of a user terminal of a user in a vehicle from the user terminal via the communicator, based on the positional information of the user terminal, identify a first advertisement display apparatus that is located within a predetermined distance range from the user terminal and satisfies a predetermined condition, and transmit an instruction to display a help request message corresponding to the help request information, to the first advertisement display apparatus via the communicator is provided.

Abstract: A display device includes a display configured to display a deterioration degree of a secondary battery and a controller. The controller is configured to control the display such that the display does not display the deterioration degree when the deterioration degree is lower than a first level, or configured to control the display such that the display does not display the deterioration degree when the deterioration degree is higher than a second level that is higher than the first level.