Abstract: An information processing system including: a road-side apparatus installed at an entrance or an exit of a toll road or a facility, the road-side apparatus being configured to perform predetermined wireless communication with an in-vehicle apparatus in a vehicle passing through the entrance or the exit; and a server is provided. The server includes a control unit configured to: if passage of the vehicle through the entrance or the exit is detected by the road-side apparatus, acquire destination information relating to a destination of the vehicle and state information relating to a state of the vehicle from the in-vehicle apparatus; select advertisement information to be distributed to the vehicle, based on the destination information; determine whether or not a predetermined condition for ensuring safety of running of the vehicle is satisfied, based on the state information; and if the predetermined condition is satisfied, distribute the advertisement information to the vehicle.

Abstract: Provided is an information processing system including: a roadside apparatus placed at an entrance or an exit of a toll road or a pay facility; a display apparatus placed at the entrance or the exit; and a server capable of communicating with the roadside apparatus. The roadside apparatus includes: a radio communicator performing predetermined radio communications with an onboard apparatus loaded on the vehicle passing through the entrance or the exit; a communicator communicating with the server; and a processor transmitting user information regarding a user owning the vehicle received from the onboard apparatus via the radio communicator to the server via the communicator. The server includes a processor that: receives user information; when the user information is the user information regarding an advertiser, acquires advertisement information corresponding to the advertiser; and transmits an instruction to display the advertisement information on the display apparatus.

Abstract: An information processing system including a vehicle and a server is provided. The vehicle includes a display installed so as to face the inside of the vehicle, a position information acquirer configured to acquire position information, and, an in-vehicle apparatus. The server includes a communicator configured to receive the position information of the vehicle and a controller configured to transmit advertisement data including a content posted on a sign present in a predetermined range centered on the vehicle in a direction in which the display is installed to the in-vehicle apparatus via the communicator. Also, the in-vehicle apparatus includes a communicator configured to transmit the position information of the vehicle to the server and receive the advertisement data from the server, and a controller configured to perform processing for causing the advertisement data to be displayed on the display.

Abstract: In an edge termination region, a trench is provided near a boundary of an active region. An embedded insulating film is embedded in the trench, and an inner FP and an outer FP are provided in the embedded insulating film. The inner FP extends from a center portion of the trench, upward and toward the active region and is curved in a protrusion-like shape that protrudes in a direction away from a side wall and a bottom of the trench. An upper end of the inner FP opposes an inner top corner portion of the trench, across the embedded insulating film or the interlayer insulating film. The upper end of the inner FP is positioned a predetermined distance from the front surface of the semiconductor substrate due to the embedded insulating film between the upper end of the inner FP and the front surface of the semiconductor substrate.

Abstract: In a semiconductor device, a p+ back gate region (PBG) is arranged in a main surface (S1) between first and second portions (P1, P2) of an n+ source region (SR), and arranged on a side closer to an n+ drain region (DR) with respect to the n+ source region (SR). Thereby, a semiconductor device having a high on-state breakdown voltage can be obtained.

Abstract: A control apparatus for a hybrid vehicle determines a scheduled travel route. The control apparatus further determines a downhill section included in the scheduled travel route by using gradient information acquired for a road section at a time when the vehicle has traveled on the road section and using gradient information stored in a navigation database for a road section on which the vehicle travels for a first time. The control apparatus determines a section from a downhill control start point to an end point of the target downhill section as a downhill control section. The downhill control start point is a point located a predetermined first distance closer to the vehicle from a start point of the target downhill section. When the vehicle travels on the downhill control section, the control apparatus executes downhill control.

Abstract: A control apparatus for a hybrid vehicle determines a scheduled travel route. The control apparatus further determines a downhill section included in the scheduled travel route by using gradient information acquired for a road section at a time when the vehicle has traveled on the road section and using gradient information stored in a navigation database for a road section on which the vehicle travels for a first time. The control apparatus determines a section from a downhill control start point to an end point of the target downhill section as a downhill control section. The downhill control start point is a point located a predetermined first distance closer to the vehicle from a start point of the target downhill section. When the vehicle travels on the downhill control section, the control apparatus executes downhill control.

Abstract: A lever-type connector includes a housing having support holes; a fitting part provided inside the housing and fitted in a counterpart connector; a lever that includes a pair of plate-like portions facing each other in an opposed manner, a connection portion connecting the pair of plate-like portions with each other, and projection portions provided respective outside surfaces of the pair of plate-like portions, the lever being rotatably supported by the housing while the projection portions are engaged with the support holes; and sliding members each includes a guide portion that is slidably supported by the housing and engaged with a part to be guided provided to the counterpart connector, the sliding members being slid depending on a rotation of the lever to depress the part to be guided by way of the guide portion and fit the counterpart connector in the fitting part.

Abstract: In a semiconductor device, a p+ back gate region (PBG) is arranged in a main surface (S1) between first and second portions (P1, P2) of an n+ source region (SR), and arranged on a side closer to an n+ drain region (DR) with respect to the n+ source region (SR). Thereby, a semiconductor device having a high on-state breakdown voltage can be obtained.

Abstract: In a semiconductor device, a p+ back gate region (PBG) is arranged in a main surface (S1) between first and second portions (P1, P2) of an n+ source region (SR), and arranged on a side closer to an n+ drain region (DR) with respect to the n+ source region (SR). Thereby, a semiconductor device having a high on-state breakdown voltage can be obtained.

Abstract: A lever-type connector includes a housing having support holes; a fitting part provided inside the housing and fitted in a counterpart connector; a lever that includes a pair of plate-like portions facing each other in an opposed manner, a connection portion connecting the pair of plate-like portions with each other, and projection portions provided respective outside surfaces of the pair of plate-like portions, the lever being rotatably supported by the housing while the projection portions are engaged with the support holes; and sliding members each includes a guide portion that is slidably supported by the housing and engaged with a part to be guided provided to the counterpart connector, the sliding members being slid depending on a rotation of the lever to depress the part to be guided by way of the guide portion and fit the counterpart connector in the fitting part.

Abstract: A control apparatus for a hybrid vehicle determines a scheduled travel route. The control apparatus further determines a downhill section included in the scheduled travel route by using gradient information acquired for a road section at a time when the vehicle has traveled on the road section and using gradient information stored in a navigation database for a road section on which the vehicle travels for a first time. The control apparatus determines a section from a downhill control start point to an end point of the target downhill section as a downhill control section. The downhill control start point is a point located a predetermined first distance closer to the vehicle from a start point of the target downhill section. When the vehicle travels on the downhill control section, the control apparatus executes downhill control.

Abstract: An indoor illuminating device includes a housing that has an opening part, a light source that is accommodated in the housing by being inserted into the housing via the opening part of the housing, electric wires that are led in the housing via the opening part of the housing, and supplies electric power to the light source, and a cover that covers the opening part of the housing. A plurality of through holes are formed between the housing and the cover in a state where the cover is installed to the housing. The electric wires are drawn out from the housing via the through holes. The cover is formed with a rib to which a corrugated tube through which the electric wires are inserted is fixed by being wound with tape.

Abstract: A trench lateral diffusion metal oxide semiconductor (LDMOS) device, disposed on a substrate, comprising: a transistor and an LDMOS transistor. The transistor has a gate. The LDMOS transistor has a trench gate, wherein the trench gate protrudes from a surface of the substrate. Electrical connection of the trench gate and a doping region due to a metal silicide may be prevented by protruding the trench gate from the surface of the substrate. And furthermore a step height difference between a gate and the trench gate may be decreased, and openings respectively exposing a top portion of the trench gate and a top portion of the gate may be formed without changing the manufacturing conditions.

Abstract: In a semiconductor device, a p+ back gate region (PBG) is arranged in a main surface (Si) between first and second portions (P1, P2) of an n+ source region (SR), and arranged on a side closer to an n+ drain region (DR) with respect to the n+ source region (SR). Thereby, a semiconductor device having a high on-state breakdown voltage can be obtained.

Abstract: To provide a semiconductor device capable of suppressing a reduction in breakdown voltage by suppressing a change in dimensions of a double RESURF structure, and a method of manufacturing the same. In the semiconductor device, an upper RESURF region is formed so as to contact with a first buried region on a side of the one main surface within a semiconductor substrate. The semiconductor substrate has a field oxide formed so as to reach the upper RESURF region on the one main surface. The semiconductor substrate includes a second conductivity type body region formed so as to contact with the upper RESURF region on a side of the one main surface and so as to neighbor the field oxide within the semiconductor substrate.

Abstract: A semiconductor structure is provided. An N-type epitaxial layer is disposed on an N-type substrate. The N-type epitaxial layer has at least one trench therein, wherein the trench has a straight sidewall. A first insulating layer is disposed on at least a portion of a surface of the trench. A silicon-containing layer is disposed in a lower portion of the trench and has at least one air gap therein. A first conductive layer is disposed in an upper portion of the trench. Two P-type well regions are disposed in the N-type epitaxial layer beside the trench. Two N-type source regions are respectively disposed in the P-type well regions beside the trench.

Abstract: To provide a semiconductor device capable of suppressing a reduction in breakdown voltage by suppressing a change in dimensions of a double RESURF structure, and a method of manufacturing the same. In the semiconductor device, an upper RESURF region is formed so as to contact with a first buried region on a side of the one main surface within a semiconductor substrate. The semiconductor substrate has a field oxide formed so as to reach the upper RESURF region on the one main surface. The semiconductor substrate includes a second conductivity type body region formed so as to contact with the upper RESURF region on a side of the one main surface and so as to neighbor the field oxide within the semiconductor substrate.

Abstract: An indoor illuminating device includes a housing that has an opening part, a light source that is accommodated in the housing by being inserted into the housing via the opening part of the housing, electric wires that are led in the housing via the opening part of the housing, and supplies electric power to the light source, and a cover that covers the opening part of the housing. A plurality of through holes are formed between the housing and the cover in a state where the cover is installed to the housing. The electric wires are drawn out from the housing via the through holes. The cover is formed with a rib to which a corrugated tube through which the electric wires are inserted is fixed by being wound with tape.

Abstract: A charging state displaying device includes a casing, a board, a plurality of light sources, and display units. The casing includes a light blocking part. The board is mounted on the light blocking part and is accommodated in the casing. The light sources are disposed on the board so as to be separated by the board. The display units have light-permeability and are provided at positions of the casing corresponding to the light sources respectively. The board is configured to prevent leakage and mixture of lights emitted from the light sources in a cooperation with the light blocking part.