Abstract: A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions.

Abstract: A semiconductor device includes a channel region; a gate dielectric over the channel region; and a gate electrode over the gate dielectric. A first source/drain region is adjacent the gate dielectric, wherein the first source/drain region is a semiconductor region and of a first conductivity type. A second source/drain region is on an opposite side of the channel region than the first source/drain region, wherein the second source/drain region is a metal region. A pocket region of a second conductivity type opposite the first conductivity type is horizontally between the channel region and the second source/drain region.

Abstract: A semiconductor device includes a channel region; a gate dielectric over the channel region; a gate electrode over the gate dielectric; and a first source/drain region adjacent the gate dielectric. The first source/drain region is of a first conductivity type. At least one of the channel region and the first source/drain region includes a superlattice structure. The semiconductor device further includes a second source/drain region on an opposite side of the channel region than the first source/drain region. The second source/drain region is of a second conductivity type opposite the first conductivity type. At most, one of the first source/drain region and the second source/drain region comprises an additional superlattice structure.

Abstract: A semiconductor device and the methods of forming the same are provided. The semiconductor device includes a low energy band-gap layer comprising a semiconductor material; a gate dielectric on the low energy band-gap layer; a gate electrode over the gate dielectric; a first source/drain region adjacent the gate dielectric, wherein the first source/drain region is of a first conductivity type; and a second source/drain region adjacent the gate dielectric. The second source/drain region is of a second conductivity type opposite the first conductivity type. The low energy band-gap layer is located between the first and the second source/drain regions.