Abstract: Analog circuits for providing one or more waveform parameters, e.g., the DC offset or average, of an analog input signal. Separate biasing is not necessarily required. Some embodiments comprise field-effect-transistors (FETs) configured in various diode-connected configurations that take advantage of leakage currents through the FETs so that long resistors or large capacitors are not necessarily required. One embodiment comprises two diode-connected FETs to provide an unbiased DC offset voltage of an analog input signal.

Abstract: A strained-silicon voltage controlled oscillator (VCO) includes a first p-channel metal oxide semiconductor (PMOS) device having a strained-silicon layer coupled to a second PMOS device having a strained-silicon layer.

Abstract: Techniques to provide DC-offset correction in a variable gain amplifier are described.

Abstract: An apparatus and system may include a microstrip line capable of being coupled to an amplifier, wherein the microstrip line is to transform an input impedance of the amplifier to a substantially resistive value, and wherein the microstrip line has a characteristic impedance approximately equal to a selected system reference impedance. The apparatus and system may include a transformer coupled to the microstrip line, wherein the transformer is to transform the substantially resistive value into approximately a resistance of a source impedance included in a source. An article may include data, which, when accessed, results in a machine performing a method including simulating selecting a system having a reference impedance and simulating coupling an amplifier having an input impedance to a source having a source impedance using a transformer coupled to a microstrip line.

Abstract: A low loss on-die interconnect structure includes first and second differential signal lines on one of the metal layers of a microelectronic die. One or more traces may also be provided on another metal layer of the die that are non-parallel (e.g., orthogonal) to the differential signal lines. Because the traces are non-parallel, they provide a relatively high impedance return path for signals on the differential signal lines. Thus, a signal return path through the opposite differential line predominates for the signals on the differential lines. In one application, the low loss interconnect structure is used within an on-die salphasic clock distribution network.

Abstract: Phase and amplitude offsets of a multicarrier transceiver may be reduced by measuring receiver amplitude and phase mismatches of receiver radio-frequency (RF) circuitry by performing a fast Fourier transform (FFT) on a receiver calibration signal.

Abstract: Briefly, devices and methods for tuning of quadrature oscillators which may be used, for example, in a Complementary Metal-Oxide Semiconductor (CMOS) process. Devices and methods in accordance with some exemplary embodiments of the invention may allow, for example, improved locking, tuning and performance of slave oscillators and a master oscillator within a quadrature oscillator utilizing injection-locking.

Abstract: A low loss on-die interconnect structure includes first and second differential signal lines on one of the metal layers of a microelectronic die. One or more traces may also be provided on another metal layer of the die that are non-parallel (e.g., orthogonal) to the differential signal lines. Because the traces are non-parallel, they provide a relatively high impedance return path for signals on the differential signal lines. Thus, a signal return path through the opposite differential line predominates for the signals on the differential lines. In one application, the low loss interconnect structure is used within an on-die salphasic clock distribution network.

Abstract: A quadrature oscillator includes a master tuned oscillator and two injection-locked slave tuned oscillators.

Abstract: A semiconductor device or a circuit includes a controllable oscillator and circuitry that senses a voltage which may control the controllable oscillator and digitally controls a gain compensation, adaptively compensating for a drop in a gain against overall loop gain within a closed loop. In one embodiment, a single supply source may be used to power the closed loop while a variable gain stage that is digitally controllable may adjust the gain in a feed-forward manner based on the drop.

Abstract: A semiconductor device or a circuit includes a controllable oscillator and circuitry that senses a voltage which may control the controllable oscillator and digitally controls a gain compensation, adaptively compensating for a drop in a gain against overall loop gain within a closed loop. In one embodiment, a single supply source may be used to power the closed loop while a variable gain stage that is digitally controllable may adjust the gain in a feed-forward manner based on the drop.

Abstract: A strained-silicon voltage controlled oscillator (VCO) includes a first p-channel metal oxide semiconductor (PMOS) device having a strained-silicon layer coupled to a second PMOS device having a strained-silicon layer.

Abstract: A quadrature oscillator includes a master tuned oscillator and two injection-locked slave tuned oscillators.

Abstract: A dual-rail static logic gate with a self cut-off mechanism is disclosed. In an embodiment, the output of the first rail is coupled to the input of the pull-up device of the second rail and vice versa. The cross-coupling allows the self cut-off mechanism of the static gate to function properly and provides for components which have lower capacitance than conventional static gates. The lower capacitance results in a faster static gate.

Abstract: Briefly, devices and methods which may be used in conjunction with a Complementary Metal-Oxide Semiconductor (CMOS) process. Exemplary embodiments of the invention may provide an enhanced charge-pump circuit with gain compensation, an enhanced varactor with wide tuning range, and/or enhanced Phase-Lock Loop (PLL) circuits, which may be used, for example, within various oscillators and/or wireless communication devices.

Abstract: Briefly, an antenna receiver that may receive and combine RF signals from two or more antennas. The antenna receiver may include a plurality of antenna weighted value generators operably coupled to a plurality of antennas. The antenna weighted value generator is able to generate an antenna weighted value based on a manipulation of a first value derived from an amplitude of a received signal received by one antenna with a second value derived from a phase of the received signal.

Abstract: Briefly, devices and methods for wide-range tuning of oscillators which may be used, for example, in a Complementary Metal-Oxide Semiconductor (CMOS) process. An oscillator in accordance with an exemplary embodiment of the invention may include, for example, a tuner to tune a frequency of the oscillator between a first free-running frequency of a first oscillation tank and a second free-running frequency of a second oscillation tank.

Abstract: Briefly, devices and methods for tuning of quadrature oscillators which may be used, for example, in a Complementary Metal-Oxide Semiconductor (CMOS) process. Devices and methods in accordance with some exemplary embodiments of the invention may allow, for example, improved locking, tuning and performance of slave oscillators and a master oscillator within a quadrature oscillator utilizing injection-locking.

Abstract: Briefly, exemplary embodiments of the invention may provide devices and methods to provide precise and/or low phase-noise quadrature oscillation signals. A quadrature oscillator in accordance with an exemplary embodiment of the invention may include, for example, a phase-shift generator to provide a phase-shift of substantially &pgr;/2 radians to an oscillation signal between a first oscillation tank, which provides substantially no phase-shift, and a second oscillation tank.

Abstract: A clock receiver circuit converts low amplitude, differential clock signal components received from a differential clock distribution medium into a full swing digital clock. The clock receiver circuit can be used as part of, for example, an on-die salphasic clock distribution system within a microelectronic device.