Abstract: Analog circuits for providing one or more waveform parameters, e.g., the DC offset or average, of an analog input signal. Separate biasing is not necessarily required. Some embodiments comprise field-effect-transistors (FETs) configured in various diode-connected configurations that take advantage of leakage currents through the FETs so that long resistors or large capacitors are not necessarily required. One embodiment comprises two diode-connected FETs to provide an unbiased DC offset voltage of an analog input signal.

Abstract: A low loss on-die interconnect structure includes first and second differential signal lines on one of the metal layers of a microelectronic die. One or more traces may also be provided on another metal layer of the die that are non-parallel (e.g., orthogonal) to the differential signal lines. Because the traces are non-parallel, they provide a relatively high impedance return path for signals on the differential signal lines. Thus, a signal return path through the opposite differential line predominates for the signals on the differential lines. In one application, the low loss interconnect structure is used within an on-die salphasic clock distribution network.

Abstract: Analog circuits for providing one or more waveform parameters, e.g., the DC offset or average, of an analog input signal. Separate biasing is not necessarily required. Some embodiments comprise field-effect-transistors (FETs) configured in various diode-connected configurations that take advantage of leakage currents through the FETs so that long resistors or large capacitors are not necessarily required. One embodiment comprises two diode-connected FETs to provide an unbiased DC offset voltage of an analog input signal.

Abstract: A hierarchical clock distribution system includes a global clock grid that distributes a clock signal to a plurality of regional clock grids. Each of the regional clock grids then distributes the signal to a plurality of corresponding loads. The regional clock grids utilize salphasic clocking techniques to distribute the clock signal to the corresponding loads. The global grid achieves low skew based on the periodicity of the clock signal, rather than the dominance of a standing wave. The electrical distance to termination within the regional clock grids is preferably kept low to avoid the occurrence of phase change regions on the regional grids. In one approach, the regional grids are each driven at multiple points in a symmetrical fashion to reduce the electrical distance to termination.

Abstract: An area-efficient delay cell utilizes transistor stacks to control positive feedback responsive to a counter code, thereby controlling the hysteresis and overall signal delay of the cell. The code-delay response of the cell can be modified by freezing the counter code at a convenient value. Linear superposition of the responses of one modified cell connected in series with one unmodified cell provides a more linear overall response and reduces jitter when used in a delay locked loop.

Abstract: An apparatus and method for boosting a transmission gate by charging a pair of capacitors and using the coupling effect of that pair of capacitors to overdrive the gate inputs of NMOS and PMOS transistors of a transmission gate to turn on the transistors more strongly and speed the passage of data signals.

Abstract: An apparatus and method for boosting a transmission gate by charging a pair of capacitors and using the coupling effect of that pair of capacitors to overdrive the gate inputs of NMOS and PMOS transistors of a transmission gate to turn on the transistors more strongly and speed the passage of data signals.

Abstract: A novel circuit technique for reducing leakage currents through the read-path of large register files in which a negative gate-source voltage is forced on a critical pass transistor between a cell read transistor and a local bitline such that when the cell is in a first state, the leakage current from a dynamic node of the cell read transistor is reduced. The reduced leakage current increases the robustness and performance of the read operation.

Abstract: A latch having increased soft error rate tolerance includes cross-coupled inverters having transistors with varying sizes. Diffusion regions of transistors coupled to storage nodes are kept small to reduce the effect of charge accumulation resulting from particles bombarding the bulk of an integrated circuit die. Transistors having gates coupled to the storage nodes are increased in size to increase the capacitance on the storage nodes. The reduced size of diffusion regions and increased size of gates on storage nodes combine to reduce the effects of accumulated charge. Diffusion region area is further reduced by reducing the size of pass gates that load normal data and scan data. A large capacitor is coupled to a feedback node within the cross-coupled inverters to further reduce the effect of accumulated charge.

Abstract: Methods and apparatus for generating a MOSFET based voltage reference circuit with automatic trimming of resistors to compensate for process and supply voltage variations and to improve the accuracy of a MOSFET based reference voltage circuit, a temperature compensated MOSFET based reference voltage, and arbitrary translation of the MOSFET based reference voltage with or without trimming are provided.

Abstract: In some embodiments, the invention includes an interconnect system having a single ended driver and a single ended hysteretic receiver. A single ended interconnect is coupled between the single ended driver and single ended receiver. In other embodiments, the invention involves an interconnect system including interconnects, single ended drivers, and single ended hysteretic receivers connected to respective ones of the interconnects. The single ended drivers receive respective data-in signals and an enable signal and wherein the drivers transmit interconnect signals on the interconnects when the enable signal is asserted. In yet other embodiments, the invention includes an interconnect system having interconnects, quasi-static drivers and receivers connected to respective ones of the interconnects.

Abstract: A hardened latch capable of providing protection against single event upsets (SEUs) is disclosed. The hardened latch includes a first latch and a second latch that mirrors a subset of gates of the first latch. The second latch is inserted in the feedback path of the keeper circuit of the first latch and is cross-coupled with the gates of the keeper circuit of the first latch. The latch is hardened against single event upsets and an arbitrary number of successive SEUs attacking a single node, provided that the time between successive SEUs is larger than the recovery time of the latch. An alternate embodiment of the hardened latch includes a split buffer output. This embodiment is capable of reducing the propagation of erroneous transients. Another alternate embodiment of the hardened latch includes a Miller C buffer output. This embodiment is capable of reducing the propagation of erroneous transients below the level achievable in a hardened latch employing a split buffer output.

Abstract: A signal processing apparatus includes an amplifier for processing an input signal and a variable voltage source. The variable voltage source is coupled to the amplifier substrate, and the input impedance of the amplifier is controlled by varying the voltage on the substrate body of the amplifier. In processing a radio frequency (RF) signal, the amplifier receives the RF signal, and by varying the voltage on the amplifier substrate, the input impedance of the amplifier is matched to the source impedance. The overall noise performance of the amplifier is improved by employing an automatic gain control system and a digital-to-analog converter in a feedback loop between the output port of the amplifier and the amplifier substrate.

Abstract: In some embodiments, the invention includes a domino logic gate circuit having a domino state and a single ended domino compatible dual function generator. The domino state receives a domino stage input signal and provides a single ended intermediate signal as a function of the domino stage input signal, the intermediate signal having a state. The generator receives the intermediate signal and provides an out signal and an out* signal each having a state, wherein the out and out* signals have the same state during a precharge phase and have complementary states during an evaluate phase as a function of the state of the intermediate signal. In other embodiments, the invention includes domino logic gate circuit having a combined domino stage and dual function generator. The domino stage is to receive a domino stage input signal.

Abstract: In some embodiments, the invention includes circuit having a differential amplifier and body bias control circuitry. The differential amplifier includes a differential pair of first and second FET transistors to at least partially control output voltage signals responsive to input voltage signals, the first and second FET transistors being configured to be matched and having a body. The body bias control circuitry provides a body bias voltage signal to the body to place the first and second FET transistors in a forward body bias condition. The differential amplifier and body bias circuitry may be used in a sense amplifier, comparator, voltage controlled oscillator, delay locked loop, and phase locked loop as well as other circuits.

Abstract: In some embodiments, the invention includes a domino circuit having a precharge circuit including a source follower nFET device coupled to a domino stage conductor. An evaluation path circuit is also coupled to the domino stage conductor. A hysteretic output stage receives a signal from the domino stage conductor and provide therefrom an evaluated output signal. In other embodiments, the invention includes a domino circuit having a predischarge circuit coupled to a domino stage conductor. An evaluation path circuit includes source follower nFET devices coupled to the domino stage conductor. A hysteretic output stage receives a signal from the domino stage conductor and provides therefrom an evaluated output signal. In still other embodiments, the invention includes a domino circuit having a precharge circuit including coupled to a domino stage conductor. An evaluation path circuit is coupled to the domino stage conductor.

Abstract: A nonlinear body effect compensation circuit includes a number of PMOSFETs, each having an identical current flow, with two of the PMOSFETs having different sizes, and two of the PMOSFETs having different body to source voltages. The different body to source voltages of the two PMOSFETs affect the gate to source voltage of the PMOSFETs in a manner that allows compensation of nonlinear body effects as a function of temperature. A voltage proportional to absolute temperature (VPTAT) is generated as a difference between the gate to source voltages of the two PMOSFETs having different sizes, and a voltage not proportional to absolute temperature (VnPTAT) is generated as a difference between the gate to source voltages of the two PMOSFETs having different body to source voltages.

Abstract: A driver to provide low voltage swings on a bus with fast switching times, the driver comprising two pairs of pullup and pulldown nMOSFETs, each pair operated in complementary fashion to each other, each pair with a high voltage rail at a smaller voltage than the data input logic HIGH voltage, and where each substrate of the nMOSFETs are biased so as to reduce their threshold voltages.