Patents by Inventor Kristy Campbell

Kristy Campbell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure for amorphous carbon based non-volatile memory
    Patent number: 7344946
    Abstract: A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at least one second memory elements.
    Type: Grant
    Filed: June 7, 2006
    Date of Patent: March 18, 2008
    Assignee: Micron Technology, Inc.
    Inventors: John Moore, Kristy A. Campbell, Joseph F. Brooks
  • Diode/superionic conductor/polymer memory structure
    Patent number: 7338851
    Abstract: A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal-chalcogenide layer has a first conductivity type and the second metal-chalcogenide layer has a second conductivity type. The plane of contact between the first and second metal-chalcogenide layers creates the p-n junction of the built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide layer. The second metal-chalcogenide layer provides ions to the polymer layer to change its resistivity. A top electrode is then provided over the polymer layer. An exemplary memory cell may have the following stacked structure: first electrode/n-type semiconductor/p-type semiconductor/conjugated polymer/second electrode.
    Type: Grant
    Filed: July 14, 2004
    Date of Patent: March 4, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Phase change memory cell and method of formation
    Patent number: 7332735
    Abstract: A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is over the phase change material layer. The metal chalcogenide layer is tin-telluride. A second electrode is over the metal-chalcogenide layer. The memory element is configured to have reduced current requirements.
    Type: Grant
    Filed: August 2, 2005
    Date of Patent: February 19, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Differential negative resistance memory
    Patent number: 7329558
    Abstract: The invention relates to a DNR (differential negative resistance) exhibiting device that can be programmed to store information as readable current amplitudes and to methods of making such a device. The stored data is semi-volatile. Generally, information written to a device in accordance with the invention can maintain its memory for a matter of minutes, hours, or days before a refresh is necessary. The power requirements of the device are far reduced compared to DRAM. The memory function of the device is highly stable, repeatable, and predictable. The device can be produced in a variety of ways.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: February 12, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Memory device with switching glass layer
    Patent number: 7326950
    Abstract: A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device.
    Type: Grant
    Filed: June 7, 2005
    Date of Patent: February 5, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Method and apparatus for providing color changing thin film material
    Patent number: 7317567
    Abstract: An electrochromic device and methods for forming the same are provided. The device includes first and second electrodes. A layer of (GexSe100-x)100-yMny is between the first and second electrodes.
    Type: Grant
    Filed: August 2, 2005
    Date of Patent: January 8, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • SnSe-based limited reprogrammable cell
    Patent number: 7317200
    Abstract: Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a layer of a chalcogenide or germanium comprising material between the first electrode and the second electrode. The memory device further includes a tin-chalcogenide layer between the chalcogenide or germanium comprising material layer and the second electrode.
    Type: Grant
    Filed: February 23, 2005
    Date of Patent: January 8, 2008
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Methods of operating and forming chalcogenide glass constant current devices
    Patent number: 7315465
    Abstract: The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.
    Type: Grant
    Filed: January 13, 2005
    Date of Patent: January 1, 2008
    Assignee: Micro Technology, Inc.
    Inventors: Kristy A. Campbell, Terry L. Gilton, John T. Moore, Joseph F. Brooks
  • Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
    Publication number: 20070287219
    Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.
    Type: Application
    Filed: August 17, 2007
    Publication date: December 13, 2007
    Inventors: Kristy Campbell, Jon Daley, Joseph Brooks
  • Chalcogenide-based electrokinetic memory element and method of forming the same
    Patent number: 7304368
    Abstract: Memory elements including a first electrode and a second electrode. A chalcogenide material layer is between the first and second electrodes and a tin-chalcogenide layer is between the chalcogenide material layer and the second electrode. A selenide layer is between the tin-chalcogenide layer and the chalcogenide material layer. Optionally, a metal layer, for example a silver layer, is between the tin-chalcogenide layer and the second electrode. Methods for forming the memory elements are also provided.
    Type: Grant
    Filed: August 11, 2005
    Date of Patent: December 4, 2007
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Method of forming a memory cell
    Patent number: 7294527
    Abstract: The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the processes can form the metal-rich metal chalcogenide without the use of photodoping techniques and without direct deposition of the metal. For example, the process can remove selenium from silver selenide.
    Type: Grant
    Filed: October 27, 2005
    Date of Patent: November 13, 2007
    Assignee: Micron Technology Inc.
    Inventors: Kristy A. Campbell, Terry L. Gilton, John T. Moore
  • Structure for amorphous carbon based non-volatile memory
    Patent number: 7288784
    Abstract: A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first conductive layer common to the at least one first and the at least one second memory elements.
    Type: Grant
    Filed: August 19, 2004
    Date of Patent: October 30, 2007
    Assignee: Micron Technology, Inc.
    Inventors: John Moore, Kristy A. Campbell, Joseph F. Brooks
  • Resistance variable memory element with threshold device and method of forming the same
    Patent number: 7289349
    Abstract: A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The threshold device is configured to switch from a high resistance state to a low resistance state upon application of a voltage and, when the voltage is removed, to re-assume the high resistance state. Additionally, the threshold device can be configured to switch in response to both negative and positive applied voltages across the first and second electrodes. Memory elements having a memory portion and threshold device between first and second electrodes and methods for forming the memory elements are also provided.
    Type: Grant
    Filed: November 20, 2006
    Date of Patent: October 30, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Kristy A. Campbell, Jon Daley, Joseph F. Brooks
  • Resistance variable memory device and method of fabrication
    Patent number: 7282783
    Abstract: Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.
    Type: Grant
    Filed: February 1, 2007
    Date of Patent: October 16, 2007
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Resistance variable memory element with threshold device and method of forming the same
    Patent number: 7277313
    Abstract: A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The threshold device is configured to switch from a high resistance state to a low resistance state upon application of a voltage and, when the voltage is removed, to re-assume the high resistance state. Additionally, the threshold device can be configured to switch in response to both negative and positive applied voltages across the first and second electrodes. Memory elements having a memory portion and threshold device between first and second electrodes and methods for forming the memory elements are also provided.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: October 2, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Kristy A. Campbell, Jon Daley, Joseph F. Brooks
  • Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
    Patent number: 7274034
    Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: September 25, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Kristy A. Campbell, Jon Daley, Joseph F. Brooks
  • Microelectronic devices and methods for manufacturing microelectronic devices
    Publication number: 20070218583
    Abstract: Microelectronic devices and methods for manufacturing microelectronic devices are disclosed herein. In one embodiment, a method includes constructing a radiation sensitive component in and/or on a microelectronic device, placing a curable component in and/or on the microelectronic device, and forming a barrier in and/or on the microelectronic device to at least partially inhibit irradiation of the radiation sensitive component. The radiation sensitive component can be doped silicon, chalcogenide, polymeric random access memory, or any other component that is altered when irradiated with one or more specific frequencies of radiation. The curable component can be an adhesive, an underfill layer, an encapsulant, a stand-off, or any other feature constructed of a material that requires curing by irradiation.
    Type: Application
    Filed: March 15, 2006
    Publication date: September 20, 2007
    Applicant: Micron Technology, Inc.
    Inventors: Warren Farnworth, Kristy Campbell
  • Chalcogenide glass constant current device, and its method of fabrication and operation
    Publication number: 20070201255
    Abstract: The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.
    Type: Application
    Filed: January 17, 2007
    Publication date: August 30, 2007
    Inventors: Kristy Campbell, Terry Gilton, John Moore, Joseph Brooks
  • Phase change current density control structure
    Publication number: 20070158631
    Abstract: A phase change memory element and method of forming the same. The memory element includes first and second electrodes. A first layer of phase change material is between the first and second electrodes. A second layer including a metal-chalcogenide material is also between the first and second electrodes and is one of a phase change material and a conductive material. An insulating layer is between the first and second layers. There is at least one opening in the insulating layer providing contact between the first and second layers.
    Type: Application
    Filed: December 16, 2005
    Publication date: July 12, 2007
    Inventors: Jon Daley, Kristy Campbell
  • PCRAM device with switching glass layer
    Publication number: 20070152204
    Abstract: A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device.
    Type: Application
    Filed: February 21, 2007
    Publication date: July 5, 2007
    Inventor: Kristy Campbell