Patents by Inventor Kristy Campbell

Kristy Campbell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PCRAM device with switching glass layer
    Publication number: 20070145463
    Abstract: A method of forming a memory device, such as a PCRAM, including selecting a chalcogenide glass backbone material for a resistance variable memory function and devices formed using such a method.
    Type: Application
    Filed: February 21, 2007
    Publication date: June 28, 2007
    Inventor: Kristy Campbell
  • Access transistor for memory device
    Publication number: 20070138527
    Abstract: An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.
    Type: Application
    Filed: February 13, 2007
    Publication date: June 21, 2007
    Inventors: Jon Daley, Kristy Campbell, Joseph Brooks
  • Resistance variable memory device and method of fabrication
    Publication number: 20070138598
    Abstract: Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.
    Type: Application
    Filed: February 1, 2007
    Publication date: June 21, 2007
    Inventor: Kristy Campbell
  • Memory element and its method of formation
    Patent number: 7223627
    Abstract: A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.
    Type: Grant
    Filed: November 16, 2004
    Date of Patent: May 29, 2007
    Assignee: Micron Technology, Inc.
    Inventors: John T. Moore, Kristy A. Campbell, Terry L. Gilton
  • Amorphous carbon-based non-volatile memory
    Patent number: 7220982
    Abstract: A resistance variable memory element and a method for forming the same. The memory element has an amorphous carbon layer between first and second electrodes. A metal-containing layer is formed between the amorphous carbon layer and the second electrode.
    Type: Grant
    Filed: July 27, 2004
    Date of Patent: May 22, 2007
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Silver-selenide/chalcogenide glass stack for resistance variable memory
    Publication number: 20070102691
    Abstract: The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100?x composition.
    Type: Application
    Filed: October 24, 2006
    Publication date: May 10, 2007
    Inventors: Kristy Campbell, John Moore
  • Chalcogenide-based electrokinetic memory element and method of forming the same
    Publication number: 20070090354
    Abstract: Memory elements including a first electrode and a second electrode. A chalcogenide material layer is between the first and second electrodes and a tin-chalcogenide layer is between the chalcogenide material layer and the second electrode. A selenide layer is between the tin-chalcogenide layer and the chalcogenide material layer. Optionally, a metal layer, for example a silver layer, is between the tin-chalcogenide layer and the second electrode. Methods for forming the memory elements are also provided.
    Type: Application
    Filed: August 11, 2005
    Publication date: April 26, 2007
    Inventor: Kristy Campbell
  • Resistance variable memory element with threshold device and method of forming the same
    Publication number: 20070064474
    Abstract: A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The threshold device is configured to switch from a high resistance state to a low resistance state upon application of a voltage and, when the voltage is removed, to re-assume the high resistance state. Additionally, the threshold device can be configured to switch in response to both negative and positive applied voltages across the first and second electrodes. Memory elements having a memory portion and threshold device between first and second electrodes and methods for forming the memory elements are also provided.
    Type: Application
    Filed: November 20, 2006
    Publication date: March 22, 2007
    Inventors: Kristy Campbell, Jon Daley, Joseph Brooks
  • Resistance variable memory device and method of fabrication
    Patent number: 7190048
    Abstract: Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.
    Type: Grant
    Filed: July 19, 2004
    Date of Patent: March 13, 2007
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Resistance variable memory element with threshold device and method of forming the same
    Publication number: 20070047297
    Abstract: A memory device having a memory portion connected in series with a threshold device between. The memory portion stores at least one bit of data based on at least two resistance states. The threshold device is configured to switch from a high resistance state to a low resistance state upon application of a voltage and, when the voltage is removed, to re-assume the high resistance state. Additionally, the threshold device can be configured to switch in response to both negative and positive applied voltages across the first and second electrodes. Memory elements having a memory portion and threshold device between first and second electrodes and methods for forming the memory elements are also provided.
    Type: Application
    Filed: August 31, 2005
    Publication date: March 1, 2007
    Inventors: Kristy Campbell, Jon Daley, Joseph Brooks
  • Resistance variable memory device with nanoparticle electrode and method of fabrication
    Publication number: 20070045604
    Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or random deposition of the nanoparticle.
    Type: Application
    Filed: August 30, 2005
    Publication date: March 1, 2007
    Inventors: Jun Liu, Kristy Campbell
  • Access transistor for memory device
    Publication number: 20070034921
    Abstract: An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region vertically stacked over the substrate. The access transistor is associated with at least one resistance variable memory element.
    Type: Application
    Filed: August 9, 2005
    Publication date: February 15, 2007
    Inventors: Jon Daley, Kristy Campbell, Joseph Brooks
  • Phase change memory cell and method of formation
    Publication number: 20070029537
    Abstract: A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is over the phase change material layer. The metal chalcogenide layer is tin-telluride. A second electrode is over the metal-chalcogenide layer. The memory element is configured to have reduced current requirements.
    Type: Application
    Filed: August 2, 2005
    Publication date: February 8, 2007
    Inventor: Kristy Campbell
  • Method and apparatus for providing color changing thin film material
    Publication number: 20070030554
    Abstract: An electrochromic device and methods for forming the same are provided. The device includes first and second electrodes. A layer of (GexSe100-x)100-yMny is between the first and second electrodes.
    Type: Application
    Filed: August 2, 2005
    Publication date: February 8, 2007
    Inventor: Kristy Campbell
  • Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
    Publication number: 20070023744
    Abstract: A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method of forming the device comprises sputtering the alternating tin chalcogenide and metal layers.
    Type: Application
    Filed: August 1, 2005
    Publication date: February 1, 2007
    Inventors: Kristy Campbell, Jon Daley, Joseph Brooks
  • Method of forming a resistance variable memory element
    Patent number: 7163837
    Abstract: A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a silver layer over a chalcogenide glass layer. Processing the silver layer via heat treating, light irradiation, or a combination of both to form a layer comprising silver interstitially formed in a chalcogenide glass layer; silver-selenide formed in a layer comprising silver interstitially formed in a chalcogenide glass layer; or a silver doped chalcogenide glass layer having silver-selenide formed therein.
    Type: Grant
    Filed: August 29, 2002
    Date of Patent: January 16, 2007
    Assignee: Micron Technology, Inc.
    Inventors: John T. Moore, Kristy A. Campbell, Terry L. Gilton
  • Layered resistance variable memory device and method of fabrication
    Publication number: 20070007506
    Abstract: The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to one embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between two glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100-x composition. According to another embodiment of the invention, a resistance variable memory element is provided having at least one silver-selenide layer in between chalcogenide glass layers and further having a silver layer above at least one of said chalcogenide glass layers and a conductive adhesion layer above said silver layer.
    Type: Application
    Filed: May 31, 2006
    Publication date: January 11, 2007
    Inventors: Kristy Campbell, Jiutao Li, Allen McTeer, John Moore
  • Resistance variable memory device and method of fabrication
    Publication number: 20060289851
    Abstract: Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.
    Type: Application
    Filed: August 29, 2006
    Publication date: December 28, 2006
    Inventor: Kristy Campbell
  • Resistance variable memory elements based on polarized silver-selenide network growth
    Patent number: 7153721
    Abstract: The invention relates to a resistance variable memory element including polarizable metal-chalcogen regions within a doped chalcogenide glass. A method for physically aligning the polarizable metal-chalcogen regions to form a conducting channel is provided. The invention also relates to a resistance variable memory element including metal-chalcogen regions within a chalcogenide glass backbone. The metal-chalcogen regions and glass regions bond to form a conducting channel. In addition, a method of operating such memory elements is provided in which metal ions move in and out of the conducting channels in response to applied voltages, thereby affecting the resistance of the memory elements.
    Type: Grant
    Filed: January 28, 2004
    Date of Patent: December 26, 2006
    Assignee: Micron Technology, Inc.
    Inventor: Kristy A. Campbell
  • Silver-selenide/chalcogenide glass stack for resistance variable memory
    Patent number: 7151273
    Abstract: The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a GexSe100?x composition.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: December 19, 2006
    Assignee: Micron Technology, Inc.
    Inventors: Kristy A. Campbell, John T. Moore