Abstract: The present disclosure provides a package structure and a method of manufacturing a package. The package structure includes a semiconductor die laterally encapsulated by an encapsulant, a redistribution structure and bumps. The redistribution structure is disposed on the semiconductor die and the encapsulant, and is electrically connected with the at least one semiconductor die. The bumps are disposed on the redistribution structure. The redistribution structure includes dielectric layers and metallic pattern layers sandwiched between the dielectric layers. The redistribution structure includes metallic pads on an outermost dielectric layer of the dielectric layers, and the outmost dielectric layer has undercut cavities beside the metallic pads.

Abstract: A semiconductor package including one or more dam structures and the method of forming are provided. A semiconductor package may include an interposer, a semiconductor die bonded to a first side of the interposer, an encapsulant on the first side of the interposer encircling the semiconductor die, a substrate bonded to the a second side of the interposer, an underfill between the interposer and the substrate, and one or more of dam structures on the substrate. The one or more dam structures may be disposed adjacent respective corners of the interposer and may be in direct contact with the underfill. The coefficient of thermal expansion of the one or more of dam structures may be smaller than the coefficient of thermal expansion of the underfill.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer.

Abstract: Digital image stitching systems and methods are disclosed herein for generating one or more panoramic image views. A plurality of digital images depicting a target feature within an application area are captured by a camera of a scanner device. Motion data is captured, by a sensor coupled to the scanner device, as the scanner device moves relative to the target feature, where relative position data, corresponding to the plurality of digital images, is determined based on the motion data. An angle or position is generated for a first image relative to a second image of the plurality of images, and, based on image matching of the angle or the position of the second image with respect to the first image, a panoramic image view is generated depicting the target feature in a wider field of view of the application area than either the first image or the second image.

Abstract: A distinguishing device for dental plaque and dental calculus includes a light-emitting diode, an image sensing unit, and a processor. The light-emitting diode movies in a first direction and is separated from teeth in an oral cavity by a predetermined distance in a second direction. The second direction is perpendicular to the first direction. The light-emitting diode generates a blue light to illuminate the teeth, so that dental plaque on the teeth generates a first autofluorescence and dental calculus on the teeth generates a second autofluorescence. The image sensing unit is configured to sense the first autofluorescence and the second autofluorescence. The processor is coupled to the image sensing unit to distinguish a dental plaque area from a dental calculus area on the teeth according to the first autofluorescence and the second autofluorescence.

Abstract: An image classifying device is provided in the invention. The image classifying device includes a storage device, a calculation circuit and a classifying circuit. The storage device stores information corresponding to a plurality of image classes. The calculation circuit obtains a target image from an image extracting device and obtains the feature vector of the target image. The calculation circuit obtains a first estimation result corresponding to the target image based on the information corresponding to the plurality of image classes and the feature vector and obtains a second estimation result corresponding to the target image based on a reference image, wherein the reference image corresponds to one of the image classes. The classifying circuit adds the target image into one of the image classes based on the first estimation result and the second estimation result.

Abstract: A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.

Abstract: Power-glitch detection and power-glitch self-testing within a chip is shown. In a chip, a processor has a power terminal, a glitch detector, and a self-testing circuit. The power terminal is configured to receive power. The glitch detector is coupled to the power terminal of the processor for power-glitch detection. The self-testing circuit has a glitch generator and a glitch controller. The glitch controller controls the glitch generator to generate a self-testing glitch signal within the chip to test the glitch detector.

Abstract: An electronic test device includes a test seat and at least one probe. The test seat has a hole-defining surface that defines a probe hole, and has two positioning sections being proximate respectively to two ends of the probe hole opposite to each other, at least one first protrusion that protrudes inwardly from the at least one positioning sections of the hole-defining surface, and at least one second protrusion that protrudes inwardly from the hole-defining surface between the positioning sections. The at least one probe is positioned in the probe hole. A thickness of each of the at least one first protrusion and the at least one second protrusion ranges from five to thirty percent of a depth of the probe hole.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration.

Abstract: An electronic test device includes a test seat and at least one probe. The test seat has a hole-defining surface that defines a probe hole, and has two positioning sections being proximate respectively to two ends of the probe hole opposite to each other, at least one first protrusion that protrudes inwardly from the at least one positioning sections of the hole-defining surface, and at least one second protrusion that protrudes inwardly from the hole-defining surface between the positioning sections. The at least one probe is positioned in the probe hole. A thickness of each of the at least one first protrusion and the at least one second protrusion ranges from five to thirty percent of a depth of the probe hole.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the semiconductor device are disclosed. The method includes depositing a high-K dielectric layer surrounding nanostructured channel regions, performing a first doping with a rare-earth metal (REM)-based dopant on first and second portions of the high-K dielectric layer, and performing a second doping with the REM-based dopants on the first portions of the high-K dielectric layer and third portions of the high-K dielectric layer. The first doping dopes the first and second portions of the high-K dielectric layer with a first REM-based dopant concentration. The second doping dopes the first and third portions of the high-K dielectric layer with a second REM-based dopant concentration different from the first REM-based dopant concentration. The method further includes depositing a work function metal layer on the high-K dielectric layer and depositing a metal fill layer on the work function metal layer.

Abstract: The speech correction system includes a storage device, an audio receiver and a processing device. The processing device includes a speech recognition engine and a determination module. The storage device is configured to store a database. The audio receiver is configured to receive an audio signal. The speech recognition engine is configured to identify a key speech pattern in the audio signal and generate a candidate vocabulary list and a transcode corresponding to the key speech pattern; wherein the candidate vocabulary list includes a candidate vocabulary corresponding to the key speech pattern and a vocabulary score corresponding to the candidate vocabulary. The determination module is configured to determine whether the vocabulary score is greater than a score threshold. If the vocabulary score is greater than the score threshold, the determination module stores the candidate vocabulary corresponding to the vocabulary score in the database.

Abstract: A tooth-position recognition system includes an electronic device and a calculation device. The electronic device includes a first camera. The first camera is configured to capture a plurality of tooth images. The calculation device includes a second camera and a processor. The second camera is configured to capture a user image. The processor is configured to receive the tooth images, compare the corresponding position of each pixel in each tooth image to generate a depth map, and input the tooth images, the depth map, and a plurality of first tooth-region identifiers into a tooth deep-learning model. The tooth deep-learning model outputs a plurality of deep-learning probability values that are the same in number as the first tooth-region identifiers. The processor inputs the user image and the plurality of second tooth-region identifiers into a user-image deep-learning model.

Abstract: A tooth-position recognition system includes an electronic device and a calculation device. The electronic device includes a first camera. The first camera is configured to capture a plurality of tooth images. The calculation device includes a second camera and a processor. The second camera is configured to capture a user image. The processor is configured to receive the tooth images, compare the corresponding position of each pixel in each tooth image to generate a depth map, and input the tooth images, the depth map, and a plurality of first tooth-region identifiers into a tooth deep-learning model. The tooth deep-learning model outputs a plurality of deep-learning probability values that are the same in number as the first tooth-region identifiers. The processor inputs the user image and the plurality of second tooth-region identifiers into a user-image deep-learning model.

Abstract: The speech correction system includes a storage device and a processing device. The storage device stores a first database. The processing device includes an audio receiver, a speech recognition engine, a calculation module, and a determination module. The audio receiver receives multiple voice inputs. The speech recognition engine recognizes the voice inputs, generates multiple candidate vocabularies corresponding to each of the voice inputs, and generates a vocabulary probability corresponding to each of the candidate vocabularies. The calculation module performs a specific operation on the vocabulary probabilities corresponding to the same candidate vocabulary, to generate a plurality of corresponding operation results. The determination module determines whether each of the operation results is greater than a score threshold, and stores at least one output result that is greater than the score threshold to the first database.

Abstract: A method includes delivering a wafer into a process chamber, applying a thermal energy to the wafer by a heat source, and moving the heat source substantially along a longitudinal direction of the heat source with respect to the wafer. An apparatus that performs the method is also disclosed.

Abstract: A method for improving the efficiency of reconstructing a three-dimensional model is provided. The method includes: dividing a series of different Gray code binary illumination patterns into a plurality of groups; converting binary values of Gray code binary illumination patterns in each group to a plurality of sets of two specific values to generate decimal illumination patterns corresponding to the specific values; overlapping the decimal illumination patterns in each group to a grayscale illumination pattern; using a projector to project each grayscale illumination pattern onto an object from a projection direction; using a camera to capture one or more object images of the object; reverting the object images to non-overlapping Gray code binary images corresponding to the object images; and reconstructing the depth of the object according to the non-overlapping Gray code binary images.

Abstract: The speech correction system includes a storage device and a processing device. The storage device stores a first database. The processing device includes an audio receiver, a speech recognition engine, a calculation module, and a determination module. The audio receiver receives multiple voice inputs. The speech recognition engine recognizes the voice inputs, generates multiple candidate vocabularies corresponding to each of the voice inputs, and generates a vocabulary probability corresponding to each of the candidate vocabularies. The calculation module performs a specific operation on the vocabulary probabilities corresponding to the same candidate vocabulary, to generate a plurality of corresponding operation results. The determination module determines whether each of the operation results is greater than a score threshold, and stores at least one output result that is greater than the score threshold to the first database.