Abstract: A semiconductor device includes a first fin protruding upwardly from a substrate, a second fin protruding upwardly from the substrate, a first gate structure having a first portion that at least partially wraps around an upper portion of the first fin and a second portion that at least partially wraps around an upper portion of the second fin, a second gate structure having a portion that at least partially wraps around the upper portion of the first fin, and a dielectric feature having a first portion between the first and second portions of the first gate structure. In a lengthwise direction of the first fin, the dielectric feature has a second portion extending to a sidewall of the second gate structure.

Abstract: A device includes: an active region extending in a first direction; a first metal-to-S/D (MD) contact structure extending in a perpendicular second direction, and over and coupled to the active region; a first layer of metallization over the first MD contact structure and having M_1st segments extending in the first direction and each having a substantially same width relative to the second direction, the M_1st segments including M_1st routing segments, and an M_1st power grid (PG) segment having a portion over and coupled to the first MD contact structure; a second layer of metallization over the first layer of metallization and having M_2nd segments that extend in the second direction and include an M_2nd PG rail configured for a first reference voltage, a portion thereof being over and coupled to the M_1st PG segment. the M_2nd PG rail extending across multiple cell regions.

Abstract: A speaker is provided and includes a first speaker body, a second speaker body, a speaker component, and a sound transmission member. The first speaker body has a first chamber. The second speaker body has a second chamber. The second speaker body is received in the first chamber and defines a resonant cavity in the first chamber. The speaker component is disposed on the second speaker body and includes a supporting member, a magnet, a coil, and a diaphragm. Two ends of the supporting member are respectively inserted into the second chamber and fixed on the second speaker body. The magnet is disposed in the supporting member. The diaphragm is disposed on the supporting member and abuts against the second speaker body. The coil is received in the magnet and is connected to the diaphragm. The sound transmission member is coaxially disposed in the resonant cavity with the speaker component.

Abstract: A method includes forming a multi-layer stack comprising dummy layers and semiconductor layers located alternatingly, and forming a plurality of dummy gate stacks on sidewalls and a top surface of the multi-layer stack. Two of the plurality of dummy gate stacks are immediately neighboring each other, and have a space in between. A first source/drain region and a second source/drain region are formed in the multi-layer stack, with the second source/drain region overlapping the first source/drain region. The method further includes replacing the plurality of dummy gate stacks with a plurality of replacement gate stacks, replacing a first one of the plurality of replacement gate stacks with a first dielectric isolation region, forming a deep contact plug in the space, forming a front-side via over the deep contact plug, and forming a back-side via under the deep contact plug, wherein the front-side via is electrically connected to the back-side via through the deep contact plug.

Abstract: The present disclosure describes a semiconductor device with a rare earth metal oxide layer and a method for forming the same. The method includes forming fin structures on a substrate and forming superlattice structures on the fin structures, where each of the superlattice structures includes a first-type nanostructured layer and a second-type nanostructured layer. The method further includes forming an isolation layer between the superlattice structures, implanting a rare earth metal into a top portion of the isolation layer to form a rare earth metal oxide layer, and forming a polysilicon structure over the superlattice structures. The method further includes etching portions of the superlattice structures adjacent to the polysilicon structure to form a source/drain (S/D) opening and forming an S/D region in the S/D opening.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first nanostructure stacked over and spaced apart from a second nanostructure, a gate stack wrapping around the first nanostructure and the second nanostructure, a source/drain feature adjoining the first nanostructure and the second nanostructure, and a first inner spacer layer interposing the gate stack and the source/drain feature and interposing the first nanostructure and the second nanostructure. A dopant in the source/drain feature has a first concentration at an interface between the first inner spacer layer and the source/drain feature and a second concentration at a first distance away from the interface. The first concentration is higher than the second concentration.

Abstract: A transient voltage suppression device includes at least one N-type lightly-doped structure, a first P-type well, a second P-type well, a first N-type heavily-doped area, and a second N-type heavily-doped area. The first P-type well and the second P-type well are formed in the N-type lightly-doped structure. The first N-type heavily-doped area and the second N-type heavily-doped area are respectively formed in the first P-type well and the second P-type well. The doping concentration of the first P-type well is higher than that of the second P-type well. The first P-type well and the second P-type well can be replaced with P-type lightly-doped wells respectively having P-type heavily-doped areas under the N-type heavily-doped areas.

Abstract: A hinge includes a first fixing bracket, a shaft and a swivel bracket. The first fixing bracket includes two first support pieces and a first connection piece. The two first support pieces are arranged in parallel to each other, and the first connection piece is connected to the two second support pieces. The two first support pieces are respectively provided with a shaft hole and the shaft holes are arranged coaxially along a central axis. At least one of the first support pieces is provided with one limiting extension portion extending in a direction in parallel to the central axis at an upper front end of the first support piece and extending towards the other first support piece. The shaft is inserted into the shaft hole.

Abstract: A hinge includes a first fixing bracket, a shaft and a swivel bracket. The first fixing bracket includes two first support pieces and a first connection piece. The two first support pieces are arranged in parallel to each other, and the first connection piece is connected to the two second support pieces. The two first support pieces are respectively provided with a shaft hole and the shaft holes are arranged coaxially along a central axis. At least one of the first support pieces is provided with one limiting extension portion extending in a direction in parallel to the central axis at an upper front end of the first support piece and extending towards the other first support piece. The shaft is inserted into the shaft hole.

Abstract: A hinge includes a seat, a shaft, a swivel bracket and at least one limiting bar. The seat includes two support portions. An accommodation area is defined between the two support portions. The two support portions are respectively provided with a shaft hole. The two shaft holes are arranged coaxially and connected to the accommodation area. The shaft includes a coupling section and two pivoting sections. The coupling section is located between the two pivoting sections. The two pivoting sections are respectively provided in one of the two shaft holes in a rotatable manner, and the coupling section is in the accommodation area. The swivel bracket includes a mounting plate, a sleeve piece and at least one extension portion. The mounting plate includes an inner surface, an outer surface, and a bottom edge. The sleeve piece extends from the bottom edge of the mounting plate and is wound at a side corresponding to the inner surface.

Abstract: A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.

Abstract: A controlling method for a wireless communication device is provided. The controlling method for the wireless communication device includes: attaching a first Universal Subscriber Identity Module (USIM) to a Long-Term Evolution (LTE) network; determining whether a second USIM is camped on the LTE network; detecting whether a paging collision is happened, if the second USIM is camped on the LTE network; generating a requested International Mobile Subscriber Identity (IMSI) offset for the second USIM, if the paging collision is happened, wherein the requested IMSI offset is 1 or min(T, nB)?1, T is a default paging period and nB is a number of paging occurrences within the default paging period; transmitting an attach request with the requested IMSI offset to the LTE network for the second USIM; receiving a negotiated IMSI offset from the LTE network; and attaching the second USIM to the LTE network with the negotiated IMSI offset.

Abstract: A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.

Abstract: The present invention is directed to nanoparticles comprising: (a) an inner core comprising oligomeric (?)-epigallocatechin gallate (OEGCG), (b) an outer core comprising a polyethylene glycol-epigallocatechin gallate conjugate (PEG-EGCG), and (c) a protein molecule of a drug substance encapsulated in the inner core; wherein at least 70% of the nanoparticles have a diameter between 50-300 nm. The present invention also provides a process for preparing the nanoparticles. The present invention further provides a method of treating cancer by administering to a subject in need thereof the nanoparticles of the present invention, in an amount effective to treat cancer.

Abstract: The present invention relates to a portable insulated brewing device, comprising of: a tubular body, wherein a top positioning part and a bottom positioning part are arranged on both sides; an assembly which comprises of a bracket at the top positioning part, wherein the bracket has a plurality of liquid channels, a push-pull rod placed in the accommodating center hole, wherein the top end of the rod consists of a holding block, and the other end consists of a shallow pressing cup, and a preset gap for liquid circulation is formed between the periphery of the pressing cup and the inner wall of the tube; a top cover which is assembled on top of the bracket assembly; and a bottom cover which is assembled on the bottom positioning part of the tube and forms a holding space with the pressing cup in which a brewed substance is placed.

Abstract: An object attribution analyzing method applied to an object attribution analyzing device and includes dividing a plurality of continuous frames into a current frame and several previous frames, utilizing face detection to track and compute a first attribution predicted value of an object within the current frame, utilizing the face detection to acquire a feature parameter of the object within the current frame for setting a first weighting, acquiring a second attribution predicted value of the object within the several previous frames, setting a second weighting in accordance with the first weighting, and generating a first induction attribution predicted value of the object within the plurality of continuous frames via the first attribution predicted value weighted by the first weighting and the second attribution predicted value weighted by the second weighting.

Abstract: An object attribution analyzing method applied to an object attribution analyzing device and includes dividing a plurality of continuous frames into a current frame and several previous frames, utilizing face detection to track and compute a first attribution predicted value of an object within the current frame, utilizing the face detection to acquire a feature parameter of the object within the current frame for setting a first weighting, acquiring a second attribution predicted value of the object within the several previous frames, setting a second weighting in accordance with the first weighting, and generating a first induction attribution predicted value of the object within the plurality of continuous frames via the first attribution predicted value weighted by the first weighting and the second attribution predicted value weighted by the second weighting.

Abstract: A method for transmitting and displaying an object tracking information includes steps of capturing an image by a camera, wherein an object exists in the image; analyzing the image by the camera to obtain a 3D world coordinate information of the object; transmitting a projection matrix and the 3D world coordinate information to a display device by the camera; using the projection matrix to convert the 3D world coordinate information into a 2D image coordinate information by the display device; and displaying a pattern corresponding to the object according to the 2D image coordinate information by the display device.

Abstract: A focus ring includes a main body, a plurality of electrodes and a plurality of power cables. The main body, made of a dielectric material, is formed as a frame structure to surround a base. The plurality of electrodes, made of metallic materials, are located inside the main body by surrounding the base, and the neighboring electrodes are separated by an interval. Each of the power cables is connected electrically with a voltage source, a control unit and at least one electrode. The voltage source inputs individual voltages to the plurality of electrodes via the plurality of respective power cables. The control unit controls the plurality of electrodes to have correspondingly a plurality of voltages.

Abstract: This invention applied in the field of the library function hook/replacement of an Android virtual machine discloses an Android dynamic framework and a method thereof. Firstly, the Android dynamic framework of the present invention starts the APP Launch process and checks the version; if the version needs patching, the Android dynamic framework would download the Hook Files including the Hook Apk and the DF_File; then, the Android dynamic framework would check if a hook is the Native Hook or not, if it is the Native Hook, the Android dynamic framework would compile the Hook Apk, and, if it is not the Native Hook, the Android dynamic framework updates the Hook Share Library; and finally, the Android dynamic framework restarts the APP.