Abstract: A waterproof electrical connector includes a connector body and a waterproof cap. The connector body includes a mating island surrounded by a ring groove. The mating island defines a mating face and plural passageways. The passageways receive conductive terminals and penetrate through the mating face. A soft cushion is set inside the waterproof cap. The connector body includes a collar portion. The collar portion is higher than the mating face and forms an entrance cavity around the ring groove. When the cap covers the connector body, the soft cushion penetrates into the entrance cavity to press and seal the mating face.

Abstract: A method includes providing a substrate, forming a patterned hard mask layer over the substrate, etching the patterned hard mask layer to form a hole that penetrates the patterned hard mask layer, forming a barrier portion in the hole, removing the patterned hard mask layer, and forming a gate structure over the substrate. Formation of the gate structure includes forming a dielectric body portion on the substrate. The barrier portion that is thicker than the dielectric body portion adjoins one end of the dielectric body portion. The dielectric body portion and the barrier portion are collectively referred to as a gate dielectric layer. Formation of the gate structure further includes forming a gate electrode on the gate dielectric layer and forming gate spacers on opposite sidewalls of the gate electrode. During formation of the gate spacers, a portion of the barrier portion is removed to form a recessed corner.

Abstract: A manufacturing method of a split gate trench device includes forming an epitaxial layer on a substrate, and forming a trench in the epitaxial layer, wherein the trench is divided into a first part and a second part above the first part. A shielding gate and a shielding oxide layer are then formed in the first part, wherein the shielding oxide layer is located between the shielding gate and the trench and exposes the second part. The second part is filled with an oxide, two grooves having a contour that is wide at the top and narrow at the bottom are then formed in the oxide, and a part of a sidewall of the trench is exposed. A gate oxide layer is formed on an exposed surface of the sidewall, and a first top gate and a second top gate are then formed in each of the two grooves.

Abstract: A package structure and a manufacturing method thereof are disclosed. The structure includes at least one semiconductor die, a redistribution layer disposed on the at least one semiconductor die, and connectors there-between. The connectors are disposed between the at least one semiconductor die and the redistribution layer, and electrically connect the at least one semiconductor die and the redistribution layer. The redistribution layer includes a dielectric layer with an opening and a metallic pattern layer disposed on the dielectric layer, and the metallic pattern layer includes a metallic via located inside the opening with a dielectric spacer surrounding the metallic via and located between the metallic via and the opening.

Abstract: A split gate trench device, including a substrate, an epitaxial layer having a trench, and a split gate structure, is provided. The epitaxial layer is formed on the substrate, and the split gate structure is disposed in the trench. The split gate structure includes a shielding gate, two top gates, a shielding oxide layer, a gate oxide layer, and an inter-gate oxide layer. Each of the two top gates has a shape that is wide at the top and narrow at the bottom.

Abstract: A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: A shower head structure and a plasma processing apparatus are provided. The shower head structure includes a plate body with a first zone and a second zone on a first surface. A plurality of first through holes are in the first zone, each of the first through holes having a diameter uniform with others of the first through holes. A plurality of second through holes are in the second zone. The first zone is in connection with the second zone, and the diameter of each of the first through holes is greater than a diameter of each of the second through holes. A plasma processing apparatus includes the shower head structure is also provided.

Abstract: The present disclosure, in some embodiments, relates an integrated chip. The integrated chip includes a substrate. A through-substrate-via (TSV) extends through the substrate. A dielectric liner separates the TSV from the substrate. The dielectric liner is along one or more sidewalls of the substrate. The TSV includes a horizontally extending surface and a protrusion extending outward from the horizontally extending surface. The TSV has a maximum width along the horizontally extending surface.

Abstract: A gallium nitride high electron mobility transistor including a substrate, a nucleation layer, a buffer layer, a channel layer, a barrier layer, a gate electrode, a source electrode, at least one first p-type gallium nitride island, a drain electrode, and a dielectric layer is provided. A second side of the gate electrode is opposite to a first side of the gate electrode. The first p-type gallium nitride island is disposed on the barrier layer on the second side of the gate electrode, and the drain electrode is also disposed on the barrier layer on the second side of the gate electrode and covers the first p-type gallium nitride island. The dielectric layer is disposed between the drain electrode and the first p-type gallium nitride island, so that the first p-type gallium nitride island is electrically floating.

Abstract: A connector controller controls a connector with a power pin, a communication pin, and a ground pin. The connector detects the voltage at the communication pin at least twice to generate first and second voltages respectively. A bus power is supplied at the power pin. The first voltage is detected when a bus current to/from the bus power is about zero. The connector controller controls the bus power in response to a difference between the first and second voltage.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, an electronic package comprises a package substrate, and a die on the package substrate. In an embodiment, the electronic package further comprises a voltage regulator on the package substrate adjacent to the die, and a metal printed circuit board (PCB) heat spreader. In an embodiment, a trace on the metal PCB heat spreader couples the die to the voltage regulator.

Abstract: A trench power semiconductor device includes a substrate, an epitaxial layer, a drain, a first active device, a second active device, and isolation trench structures. The epitaxial layer and the drain are disposed on two surfaces of the substrate, respectively. The first active device is disposed in a first portion of the epitaxial layer and has a first source and a first gate. The second active device is disposed in a second portion of the epitaxial layer and has a second source and a second gate. The isolation trench structures are disposed between the first portion and the second portion of the epitaxial layer to electrically isolate the first active device and the second active device. Each of the isolation trench structures includes a polysilicon structure with a floating potential and an insulating layer. The insulating layer is between the polysilicon structure and the epitaxial layer.

Abstract: A modular telescopic arm by motor control includes a knuckle module, a telescopic module, an outer sleeve module and an inner sleeve module. The telescopic module is disposed to one end of the knuckle module. The telescopic module includes a ball screw assembly. The ball screw assembly has a screw shaft, and a nut disposed around the screw shaft. The nut is able to slide along the screw shaft. The outer sleeve module is mounted around the one end of the knuckle module. The screw shaft is longitudinally mounted in the outer sleeve module. The inner sleeve module is disposed to the one end of the knuckle module, and the inner sleeve module surrounds a part of the telescopic module. The outer sleeve module surrounds the inner sleeve module. One end of the inner sleeve module is fastened around the nut.

Abstract: A modular telescopic rotation arm by motor control includes a fastening element, a first knuckle module, a first flange, a telescopic module, an outer sleeve module and an inner sleeve module. The first knuckle module is disposed in one end of the fastening element. One end of the first flange is connected to one end of the first knuckle module. The telescopic module is partially disposed in the fastening element. The telescopic module includes a second knuckle module. The second knuckle module is disposed in the fastening element. The outer sleeve module is connected to the first flange, and the telescopic module is partially surrounded by the outer sleeve module. The inner sleeve module is surrounded by the outer sleeve module.

Abstract: A wire retracting device includes a base having a platform, a limiting board disposed on the base, a cover including a top surface and a side wall, a slide block slidably disposed on a sliding area, and a transmission wire disposed in an accommodating space formed between the cover and the base. An annular wall is arranged on the platform, and has a limiting portion that has a first stop portion and a second stop portion respectively formed on two sides thereof. A gap, in which the cover is limited to being movable, is formed between the limiting board and the platform. The top surface has a grooved opening, and a lever is arranged on an inner edge thereof. The side wall is disposed along an edge of the top surface. The sliding area is formed between the inner edge of the grooved opening and the annular wall.

Abstract: A trench MOSFET and a manufacturing method of the same are provided. The trench MOSFET includes a substrate, an epitaxial layer having a first conductive type, a gate in a trench in the epitaxial layer, a gate oxide layer, a source region having the first conductive type, and a body region and an anti-punch through region having a second conductive type. The anti-punch through region is located at an interface between the source region and the body region, and a doping concentration thereof is higher than that of the body region. The epitaxial layer has a first pn junction near the source region and a second pn junction near the substrate. N regions are divided into N equal portions between the two pn junctions, and N is an integer greater than 1. The closer the N regions are to the first pn junction, the greater the doping concentration thereof is.

Abstract: Systems, apparatus, and/or processes directed to applying pressure to a socket to alter a shape of the socket to improve a connection between the socket and a substrate, printed circuit board, or other component. The socket may receive one or more chips, may be an interconnect, or may be some other structure that is part of a package. The shape of the socket may be flattened so that a side of the socket may form a high-quality physical and electrical coupling with the substrate.

Abstract: A movable cell incubator contains: a body, a first lid, a second lid and an electric control unit. The body includes a first internal space, a refrigeration room, and an airtight culture room. The first lid airtightly covers the culture room, the second lid airtightly covers the refrigeration room, and the control unit includes a microprocessor, a power module, a digital/analog conversion module defined between a microprocessor and the power module, a heating module controlling temperature of the culture room, a cooling module supplying cold source to the refrigeration room, a peristaltic pump module, a flow sensing module, a CO2 detective supply module supplying CO2 to the culture room, and a setting display module exposing and fixed on the first lid, with the peristaltic pump module aseptically connected between cell culture media and cell culture bag by multiple conveying tubes.