Abstract: In a method of manufacturing a semiconductor device, a first source/drain structure is formed over a substrate, one or more first insulating layers are formed over the first source/drain structure, a first opening is formed in the one or more first insulating layers, the first opening is filled with a first conductive material to form a first lower contact in contact with the first source/drain structure, one or more second insulating layers are formed over the first lower contact, a second opening is formed in the one or more second insulating layers to at least partially expose the first lower contact, a first liner layer is formed on at least a part of an inner side face of the second opening, and the second opening is filled with a second conductive material to form a first upper contact in contact with the first lower contact without the first liner layer.

Abstract: Modified adhesive layers are prepared by contacting an adhesive layer to a modified microstructured release liner. The modified release liner has a release layer surface with a set of microstructured depressions and a discontinuous pattern of ink material located on the surface of the release layer. A portion of the discontinuous pattern of ink material overlaps with and is located within some of the depressions. The ink material comprises a non-adhesive but adhesively transferrable material, or an adhesive material. Upon removal of the adhesive from the release liner, the ink material transfers to the adhesive surface.

Abstract: A composite image generation system comprises: a position information detection device 14 that detects position information about a predetermined spot in a real space; and a processing device 16 that generates a composite image in which a separately acquired superimposed image is overlaid onto a desired region in a camera image of the real space captured by a movably placed video camera 18, based on the position information from the position information detection device 14. The processing device 16 includes a position information specifying means 35 that adjusts a detection result from the position information detection device 14 to specify position information about a probe 19 used when superimposing the superimposed image onto the desired region.

Abstract: The disclosure describes an example vehicle assistance system including a light sensor, a pixelated filter array adjacent the light sensor, and a full-field optically-selective element adjacent the pixelated filter array. The optically-selective element is configured to selectively direct an optical component of light incident on the optically-selective element across the pixelated filter array to the light sensor.

Abstract: A composite image generation system comprises: a position information detection device 14 that detects position information about a predetermined spot in a real space; and a processing device 16 that generates a composite image in which a separately acquired superimposed image is overlaid onto a desired region in a camera image of the real space captured by a movably placed video camera 18, based on the position information from the position information detection device 14. The processing device 16 includes a position information specifying means 35 that adjusts a detection result from the position information detection device 14 to specify position information about a probe 19 used when superimposing the superimposed image onto the desired region.

Abstract: A method for evaluating a gas well productivity with eliminating an influence of liquid loading includes steps of: collecting basic data of a liquid loading gas well; according to a relative density of natural gas, a formation depth, and a casing pressure during a productivity test, determining a pressure generated by a static gas column in an annular space between a casing and a tubing from a well head to a bottomhole of the gas well, and obtaining a bottomhole pressure under a condition of no liquid loading; according to a pseudo-pressure of a formation pore pressure, pseudo-pressures of the bottomhole pressure respectively under the conditions of liquid loading and no liquid loading, and a production rate under the condition of liquid loading, determining a production rate under the condition of no liquid loading, and determining an absolute open flow rate with eliminating the influence of liquid loading.

Abstract: The disclosed structured retroreflective article includes a symbol aligned with raised regions of the structured retroreflective article through an orientation mark which aligns the symbol to the raised region. In one embodiment, the retroreflective article comprises a substrate comprising a background surface and a raised region, a retroreflective film comprising a first symbol and an orientation mark, wherein the retroreflective film is applied to the substrate and the orientation mark aligns the first symbol to the raised region.

Abstract: The present disclosure discloses a manufacturing device of mask assembly including at least one mask, comprising a first stretching mechanism configured to clamp the edges of the mask in a first direction and stretch the mask in a second direction and a second stretching mechanism configured to clamp the edges of the mask in the second direction and stretch the mask in the first direction, wherein the first direction being perpendicular to the second direction. The disclosure also relates to a method of manufacturing a mask assembly and a mask assembly.

Abstract: A composite image generation system comprises: a position information detection device that detects position information about a predetermined spot in a real space; and a processing device that generates a composite image in which a separately acquired superimposed image is overlaid onto a desired region in a camera image of the real space captured by a movably placed video camera, based on the detected position information. In the processing device, after performing an initial setting that sets a global coordinate system that serves as a reference when generating the composite image, the initial setting being performed while each optical marker is in a stationary state, position information about a peripheral marker used during the initial setting is reset according to a recognition state of the peripheral marker provided at a predetermined spot presumed to be disposed in the stationary state and a detection state from an acceleration sensor.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure.

Abstract: Provided herein are retroreflective colored article having a predetermined pattern of beaded and unbeaded regions and at least one polymeric color layer (130) covering at least a portion of the beaded and unbeaded regions, a reflector layer (140) covering the colour layer, and a carrier (150). Also disclosed are methods for making the articles.

Abstract: The disclosed light directing article has an optical element and a conformal retarder with predefined thickness that contours with the optical element. In one aspect, the light directing article is a retroreflective article, which further comprises a phase reversing optical reflector.

Abstract: Described herein is an article having a microsphere layer comprising a monolayer of microspheres, the monolayer of microspheres comprising a first area substantially free of microspheres and a second area comprising a plurality of randomly-distributed microspheres, wherein the monolayer of microspheres comprises a predetermined pattern, the predetermined pattern comprises at least one of (i) a plurality of the first areas, (ii) a plurality of the second areas, and (iii) combinations thereof; and (b) a bead bonding layer disposed on the microsphere layer, wherein the plurality of microspheres are partially embedded in a first major surface of the bead bonding layer, wherein the article has a retroreflectivity (Ra) of less than 5.0 candelas/lux/square meter. Also disclosed herein are transfer carriers and methods of making the articles and transfer carriers.

Abstract: In general, techniques are described for a personal protective equipment (PPE) management system (PPEMS) that uses images of optical patterns embodied on articles of personal protective equipment (PPEs) to identify safety conditions that correspond to usage of the PPEs. In one example, an article of personal protective equipment (PPE) includes a first optical pattern embodied on a surface of the article of PPE; a second optical pattern embodied on the surface of the article of PPE, wherein a spatial relation between the first optical pattern and the second optical pattern is indicative of an operational status of the article of PPE.

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. The semiconductor structure further includes a first source/drain structure and a second source/drain structure formed in the substrate adjacent to the gate structure. The semiconductor structure further includes an interlayer dielectric layer formed over the substrate to cover the gate structure, the first source/drain structure, and the second source/drain structure. The semiconductor structure further includes a first conductive structure formed in the interlayer dielectric layer over the first source/drain structure. The semiconductor structure further includes a second conductive structure formed in the interlayer dielectric layer over the second source/drain structure.

Abstract: An exposed-lens retroreflective article including a binder layer and a plurality of retroreflective elements. Each retroreflective element includes a transparent microsphere partially embedded in the binder layer. At least some of the retroreflective elements comprise at least one color layer comprising a bi-layer structure.

Abstract: A retroreflective article including a binder layer and a plurality of retroreflective elements. Each retroreflective element includes a transparent microsphere partially embedded in the binder layer. At least some of the retroreflective elements include a reflective layer that is a locally-laminated reflective layer that is embedded between the transparent microsphere and the binder layer. At least some of the locally-laminated reflective layers may be localized reflective layers.

Abstract: A retroreflective article including a reflective-particle-containing binder layer and a plurality of retroreflective elements. Each retroreflective element includes a transparent microsphere partially embedded in the binder layer. At least some of the retroreflective elements comprise a primary reflective layer that covers a portion of the embedded surface area of the transparent microsphere, and a secondary reflective layer provided by portions of the reflective-particle-containing binder layer that are adjacent to portions of the embedded surface area of the transparent microsphere that are not covered by the primary reflective layer.

Abstract: An exposed-lens retroreflective article including a binder layer and a plurality of retroreflective elements. Each retroreflective element includes a transparent microsphere partially embedded in the binder layer. At least some of the retroreflective elements comprise a reflective layer disposed between the transparent microsphere and the binder layer and at least one localized color layer that is embedded between the transparent microsphere and the reflective layer.

Abstract: A retroreflective article including a binder layer and a plurality of retroreflective elements. Each retroreflective element includes a transparent microsphere partially embedded in the binder layer. At least some of the retroreflective elements include a reflective layer that is embedded between the transparent microsphere and the binder layer. At least some of the embedded reflective layers are localized reflective layers.