Abstract: The present application is applicable to the field of semiconductor technology and provides a method for packaging stacking a flip chip, which includes: placing a filling template on a substrate, the filling template being provided with a through hole of a preset pattern; filling a filling material into the through hole of the filling template, and after the filling material being formed on the substrate, removing the filling template; placing a chip with solder balls on the substrate formed with the filling material, such that at least a portion of the solder balls being covered by the filling material; and connecting the chip to the substrate through the solder balls, and curing the filling material with air gaps formed between the at least a portion of the solder balls covered with the filling material.

Abstract: The present disclosure discloses an autophagosome for promoting healing of a diabetic wound, and a preparation method and use thereof. In the preparation method of the autophagosome provided in the present disclosure, the autophagosome is extracted from a starved vascular endothelial cell, and the production of the autophagosome does not require induction by an additional reagent. The preparation method of the present disclosure involves simple extraction conditions, does not require an ultracentrifuge, and can be implemented in an ordinary laboratory. In addition, a yield of the autophagosome is higher than a yield of an exosome. The present disclosure provides an easy-to-implement and low-cost treatment method without toxic and side effects for a patient suffering from a chronic refractory wound. The autophagosome of the present disclosure can promote healing of a diabetic wound, and reduce physiological and psychological burdens caused by a diabetic wound to a patient.

Abstract: The present disclosure belongs to the technical fields of genetic engineering and biotherapeutic drugs, and relates to an engineered exosome for treating hypertrophic scar (HTS), and a preparation method and use thereof. In the present disclosure, the engineered exosome for treating HTS is a mesenchymal stem cell (MSC)-derived exosome overexpressing miR-141-3p. The exosome can significantly reduce formation of the HTS.

Abstract: The present disclosure provides a circCDK13-enriched engineered small extracellular vesicle (E-sEV), and a preparation method and use thereof, and belongs to the technical field of biomedicine. The present disclosure provides a preparation method of the circCDK13-enriched E-sEV. In the present disclosure, human placenta-derived mesenchymal stem cells (hP-MSCs) are infected with a vector overexpressing circCDK13, and a resulting cell supernatant is collected to obtain a small extracellular vesicle (sEV) overexpressing the circCDK13, which is used for wound healing in diabetes mellitus (DM). The E-sEV shows a therapeutic effect on DM wounds that is significantly better than that of natural small extracellular vesicles (N-sEVs) secreted by the hP-MSCs. This product not only exhibits advantages in healing speed, but also has a greater application potential in stimulating skin appendage regeneration and improving the quality of wound healing.

Abstract: Provided is a manufacturing method of a semiconductor structure, including: providing a substrate; forming a first mask layer having a first mask pattern on the substrate, and etching the substrate by using the first mask layer as a mask to form active regions; forming several discrete bitlines on the active regions; forming a sacrificial layer between adjacent bitlines; forming a second mask layer having a second mask pattern on the sacrificial layer, the first mask pattern and the second mask pattern being complementary to each other; and etching the sacrificial layer by using the second mask layer and the bitlines as masks to form a plurality of contact structures. The embodiment of the present disclosure is beneficial to reducing the manufacturing cost of the semiconductor structure.

Abstract: The present disclosure provides a display panel, a method for preparing the same, and a display device. The display panel includes: a display substrate, including a base substrate, a driving transistor embedded on the base substrate, and a first electrode layer located on the base substrate; an encapsulation protection structure located on the display substrate and surrounding a display area of the display substrate; a light emitting layer located on a surface of the first electrode layer away from the base substrate; a second electrode layer located on a surface of the light emitting layer away from the base substrate; and a first encapsulation layer located on a surface of the second electrode layer away from the base substrate.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a semiconductor body, bit lines and word lines. The semiconductor body includes a substrate and an isolation structure positioned above the substrate and configured to isolate a plurality of active regions, part of each of the active regions being formed from the substrate. The bit lines are positioned in the substrate and are connected to the active regions. The word lines intersect with the active regions and surround the active regions. The substrate is Silicon On Insulator (SOI) substrate.

Abstract: The present application provides a fabricating method of a displaying base plate, a displaying base plate and a displaying device, wherein the displaying base plate includes a tapping region, an edge region surrounding the tapping region and a displaying region surrounding the edge region, and the displaying base plate within the edge region includes: a substrate base plate, and a planarization layer provided on one side of the substrate base plate; and a spacer wall and an organic functional layer that are provided on one side of the planarization layer that is further away from the substrate base plate, wherein the organic functional layer is partitioned on sides of the spacer wall; wherein a material of the spacer wall includes a photoinduced deformed material that has had an expansive deformation and a cross-linking reaction.

Abstract: A high-precision analysis method for key thermal safety phenomena in a nuclear reactor based on a particle method is provided. Fine complex geometric modeling is implemented based on a multi-resolution particle method. High-order discretization of control equations is implemented using a high-order particle discretization model. Key thermal-hydraulic, mechanical deformation, chemical reaction, and neutron physics phenomena can be analyzed. An implicit and explicit hybrid solving technique and an asynchronous marching algorithm are employed.

Abstract: A hybrid transactional/analytical processing database includes an OLTP engine, OLAP engine, and shared storage including a mass storage device holding data of multiple tenants. The shared storage includes processing circuitry configured to implement a query executor configured to continuously monitor actual memory usage of the shared storage while the shared storage is responding to one or more queries from the OLTP engine or OLAP engine. Upon determining the actual memory usage of an operator evaluating the one or more of the queries from the OLTP engine or OLAP engine at the shared storage exceeds the preventative memory usage threshold but does not exceed the system memory usage threshold, the query executor is further configured to spill one or more fragments of query memory corresponding to the one or more queries to the mass storage device, without terminating the one or more queries.

Abstract: The technology of this application relates to a memory management method and apparatus. When garbage collection is performed by using the method, stored information about a first reference cycle is first obtained, where the first reference cycle is a cyclic reference formed by a plurality of objects, and the information about the first reference cycle includes the plurality of objects in the first reference cycle and a reference relationship between the plurality of objects. The method further includes determining that a second reference cycle exists, where information about the second reference cycle matches the information about the first reference cycle, and the information about the second reference cycle includes a plurality of objects in the second reference cycle and a reference relationship between the plurality of objects. The method further includes reclaiming memory occupied by the plurality of objects in the second reference cycle.

Abstract: The utility model discloses a pipe connection mechanism, a refrigeration system having the same, and a refrigeration appliance. The pipe connection mechanism is used for connecting a flexible pipe and a rigid pipe, and includes: a joint pipe and a sleeve sleeving the flexible pipe, wherein the joint pipe has a first pipe part fixedly connected to the rigid pipe, and a second pipe part forward inserted into the flexible pipe and stretching the flexible pipe in an interference manner; and the sleeve backward sleeves the second pipe part and the sleeve and the second pipe part clamp and fix the flexible pipe together. The refrigeration system includes a rigid pipe and a flexible pipe which are fixedly connected in a fit manner through the pipe connection mechanism.

Abstract: This invention relates to a method of increasing the size of particulates in a gas comprising particulates, e.g. a gas that is formed from the combustion of fuels. The method comprises mixing an ionised gas stream with the gas comprising particulates.

Abstract: The present disclosure provides a semiconductor device and a method for manufacturing a semiconductor device. Every two first wires of a first conductive layer of the semiconductor device have a common end, and every two second wires of a second conductive layer of the semiconductor device have a common end.

Abstract: Techniques for video processing, including video coding, video decoding and video transcoding are described. One example method includes performing a conversion between a video picture that includes one or more tiles and one or more rectangular slices and a bitstream of the video according to a rule. The rule specifies that, for iteratively determining information about the one or more rectangular slices, a variable indicating a tile index is updated only for slices having indices that are smaller than a value equal to a number of slices in the video picture minus 1.

Abstract: A humidity reduction apparatus and a method for reducing the humidity of a volume of gas. The humidity reduction apparatus comprises a gas delivery conduit, at least one heat-conductive media positioned in-line within at least a portion of the gas delivery conduit, and a cooler in contact with at least a portion of the gas delivery conduit to cool the gas delivery conduit and the at least one heat-conductive media. The gas delivery conduit comprises at least one conducting portion. The first side of the cooler is configured to cool the at least one conducting portion of the gas delivery conduit and the at least one heat-conductive media. The voltage applied across the cooler is selectably reversed such that the first side heats the at least one conducting portion of the gas delivery conduit and the at least one heat-conductive media.

Abstract: A semiconductor structure includes a base and conductive channel structure which includes first and second conductive channel layers and conductive buffer layer. The first conductive channel layer includes a first conductive channel, first and second doped regions on both sides of the first conductive channel; the second conductive channel layer includes a second conductive channel and third and fourth doped regions on both sides of the second conductive channel; the conductive buffer layer reduces electrical interference between the first and third doped regions. The semiconductor structure further includes a first wire layer disposed on the base extending in a direction and in contact with the second doped region; a second wire layer extending in another direction and in contact with the first and third doped regions; and a gate structure disposed around the first and second conductive channels.

Abstract: A method, system, and computer program product are configured to: create a link tracing data structure in response to receiving a request from a user interface (UI), wherein the link tracing data structure includes a synchronization identifier and information about user actions in the UI; handle the request by calling plural microservices; add respective synchronization content for each one of the plural microservices to the link tracing data structure, wherein the respective synchronization content for a respective one of the plural microservices comprises: the synchronization identifier; a respective step identifier that identifies the respective one of the plural microservices; and a respective synchronization message that describes an execution status of the respective one of the plural microservices; store the link tracing data structure; and provide the link tracing data structure to a requesting user.

Abstract: An air conditioner includes first and second refrigerant circulation systems each including an indoor unit including an indoor heat exchanger and an indoor throttle device, an outdoor unit including a compressor and an outdoor heat exchanger, an exhaust pipe arranged at an exhaust port of the compressor, an intake pipe arranged at an intake port of the compressor, a liquid-side piping connecting the exhaust pipe, the outdoor heat exchanger, the indoor throttle device, and the indoor heat exchanger in sequence, and a gas-side piping connecting the indoor heat exchanger and the intake pipe. The air conditioner further includes a heat circulation device configured to convey heat energy or cold energy of at least one of the indoor heat exchanger of the first refrigerant circulation system or the indoor heat exchanger of the second refrigerant circulation system into a room.

Abstract: A memory and a method for manufacturing the same are provided. The memory includes a substrate; at least one pair of transistors on a surface of the substrate, in which conductive channels of the transistors extend in a direction perpendicular to the surface of the substrate; storage layers, which each are located, in the direction perpendicular to the surface of the substrate, on a side surface of each of the transistors, the storage layers are interconnected with the conductive channels of the transistors, any one of the storage layers is located between the pair of transistors, and the storage layers are configured to store electric charges and transfer the electric charges between the storage layers and the conductive channels interconnected therewith.