Abstract: A three-phase motor includes a bearing structure, a rotor structure and a stator structure. The bearing structure has a bushing. The rotor structure has a shaft disposed in the bushing. The stator structure is disposed corresponding to the rotor structure and includes a first coil assembly and a second coil assembly overlapped on the first coil assembly. A fan with the motor is also disclosed. The present invention can increase the ratio of the effective coils of the stator structure, and further promote the operation efficiency of the three-phase motor and the fan with the three-phase motor.

Abstract: A recirculation fan includes a casing, a covering member, a wind-guiding device, a passive impeller, and an active impeller. The covering member is coupled with the casing to define an accommodation space. The wind-guiding device is disposed on the covering member, and includes a wind-guiding cover and a magnetoresistive structure. The magnetoresistive structure is disposed on the covering member and the wind-guiding cover. The passive impeller is disposed within the accommodation space. The active impeller is disposed within the accommodation space and located beside the passive impeller for generating a wind to drive rotation of the passive impeller and the wind-guiding cover. In response to a magnetic torque resulted from a magnetic vortex of the magnetoresistive structure, a rotating speed of the wind-guiding cover is slowed down.

Abstract: A passive drive motor is disclosed. A stator assembly is connected to a base. A rotating shaft is rotatably connected to the base. A rotor assembly is connected to the rotating shaft. The rotor assembly interacts with the stator assembly to rotate the rotating shaft. A first metal disk is rotated by the rotating shaft. At least one first magnet pair is disposed on the first metal disk. A second metal disk opposes the first magnet pair. When the rotating shaft rotates to drive the first metal disk to rotate, the first magnet pair disposed on the first metal disk magnetically interacts with the second metal disk, driving the second metal disk to rotate with respect to the first metal disk.

Abstract: A data stream recorder system, for multi-stream recording and retrieval of utilizes a number of gateways, each for sending and receiving packets containing streaming multimedia content data at real-time rates via a packet data network. A session manager communicates via the network with source client devices and receiver client devices, to establish and control recording and retrieval sessions. The manager assigns sessions to the gateways for the sending and receiving of the packets to and from client devices. Content is distributed across storage devices associated in storage nodes. Each of the gateways receives packets containing content data at real time rates during a recording session and distributes the received packets from the session across all of the storage nodes. A scheduler of each respective storage node distributes content data from packets distributed to the respective storage node, across all of the digital storage devices of the respective storage node.

Abstract: A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.

Abstract: A high bright LED comprises a substrate, a conductive layer, a first semiconductor layer, a luminous layer, a second semiconductor layer, a first electrode, a second electrode and an insulation structure. The conductive layer, the first semiconductor layer, the luminous layer and the second semiconductor layer are disposed upwards from an upper solder layer of the substrate in order. The first electrode is electrically connected to the conductive layer The second electrode penetrates through the conductive layer, the first semiconductor layer and the luminous layer to make the upper solder and the second semiconductor layer electrically connected. The insulation structure comprises at least two passivation layers peripherally wrapping the second electrode. The thicknesses of the at least two passivation layers are conformed to the distributed Bragg reflection technique to make the passivation layers jointly used as a reflector with high reflectance.

Abstract: A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.

Abstract: The present invention provides fan with an inrunner motor. The fan includes a fan frame, a rotor and a stator. The fan frame includes a base. The rotor includes a hub, a bushing and a magnetic member, wherein the magnetic member sleeves on the bushing. The stator is disposed on the base and coupled with the rotor, and the stator includes a shaft through the bushing, wherein an end of the shaft is fixed on the base.

Abstract: A cover mechanism for an electronic device includes a protective cover and a resisting member. The protective cover includes a cover portion, and an arm portion. The arm portion allows the protective cover to rotate relative to the electronic device. The resisting member is attached to the electronic device, and prevents the arm portion from separating from the electronic device.

Abstract: A fuel cell MEA with a border packaging structure. A catalyst coated membrane includes an anode catalyst layer, a cathode catalyst layer, and a proton exchange membrane disposed therebetween. An anode border packaging member is connected between the anode catalyst layer and an anode gas diffusion layer. A cathode border packaging member is connected between the cathode catalyst layer and a cathode gas diffusion layer and adheres to the anode border packaging member at outer edges of the catalyst coated membrane. The anode border packaging member and the cathode border packaging member respectively include two adhesive layers and a substrate layer formed therebetween. The anode border packaging member and the cathode border packaging member are respectively connected between the anode catalyst layer and the anode gas diffusion layer and between the cathode catalyst layer and the cathode gas diffusion layer by the adhesive layers.

Abstract: A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020 atoms/cm3 and 1025 atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.

Abstract: A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T1, and the barrier layers are formed at a growth temperature T2, where T1<T2. Then, a second type doped semiconductor layer is formed on the light emitting layer.

Abstract: A computing system for managing site security through a communication device includes a mobile communication device, a notification, and the communication device. Using BLUETOOTH technology, the mobile communication device communicates with and activates the communication device and the notification. The communication device detects any noteworthy event and captures visual data accordingly, and transmits the visual data to the mobile communication device. The notification generates visual and audio alerts. A related method and storage medium with instructions for performance of the method also provided.

Abstract: A semiconductor wafer includes a substrate, a first separating structure and a semiconductor stacked layer structure. The substrate has a first surface. The first separating structure is formed on the first surface to divide the first surface into a plurality of independent regions. The minimum area of each of the regions is more than or equal to one square inch. The semiconductor stacked layer structure is disposed on the first surface and the first separating structure. The semiconductor wafer can prevent bowing of the semiconductor wafer during an epitaxial growth process so as to enhance quality of the semiconductor wafer.

Abstract: A three-phase motor includes a bearing structure, a rotor structure and a stator structure. The bearing structure has a bushing. The rotor structure has a shaft disposed in the bushing. The stator structure is disposed corresponding to the rotor structure and includes a first coil assembly and a second coil assembly overlapped on the first coil assembly. A fan with the motor is also disclosed. The present invention can increase the ratio of the effective coils of the stator structure, and further promote the operation efficiency of the three-phase motor and the fan with the three-phase motor.

Abstract: A portable electronic device includes a housing defining a receiving hole, an operating element slidably received in the receiving hole, an elastic element elastically positioned between the housing and the operating element, and a battery cover removably attached to the housing and latching with the operating element. A battery cover assembly is also provided.

Abstract: A cover mechanism for an electronic device includes a protective cover and a resisting member. The protective cover includes a cover portion, and an arm portion. The arm portion allows the protective cover to rotate relative to the electronic device. The resisting member is attached to the electronic device, and prevents the arm portion from separating from the electronic device.

Abstract: A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020 atoms/cm3 and 1025 atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.

Abstract: A fabrication method of light emitting diode is provided. A first type doped semiconductor layer is formed on a substrate. Subsequently, a light emitting layer is formed on the first type doped semiconductor layer. A process for forming the light emitting layer includes alternately forming a plurality of barrier layers and a plurality of quantum well layers on the first type doped semiconductor layer. The quantum well layers are formed at a growth temperature T1, and the barrier layers are formed at a growth temperature T2, where T1<T2. Then, a second type doped semiconductor layer is formed on the light emitting layer.

Abstract: A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020 atoms/cm3 and 1025 atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.