Patents by Inventor Kun-Tsang Chuang
Kun-Tsang Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210305396Abstract: A transistor device and method of making the same are disclosed. The transistor device includes one or more air gaps in one or more sidewall spacers. The one or more air gaps may be located adjacent the gate and/or above the source or drain regions of the device. Various embodiments may include different combinations of air gaps formed in one or both sidewall spacers. Various embodiments may include air gaps formed in one or both sidewall spacers adjacent to the gate and/or above the source or drain regions of the device. The formation of the air gaps may reduce unwanted parasitic and/or fringing capacitance.Type: ApplicationFiled: March 31, 2020Publication date: September 30, 2021Inventors: Gulbagh Singh, Po-Jen Wang, Kun-Tsang Chuang
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Patent number: 11121141Abstract: A semiconductor structure includes a semiconductor substrate, at least one raised dummy feature, at least one memory cell, and at least one word line. The raised dummy feature is present on the semiconductor substrate and defines a cell region on the semiconductor substrate. The memory cell is present on the cell region. The word line is present adjacent to the memory cell.Type: GrantFiled: May 6, 2019Date of Patent: September 14, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chiang-Ming Chuang, Chien-Hsuan Liu, Chih-Ming Lee, Kun-Tsang Chuang, Hung-Che Liao, Hsin-Chi Chen
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Publication number: 20210210381Abstract: A method of making a semiconductor structure includes depositing a first passivation material between adjacent conductive elements on a substrate, wherein a bottommost surface of the first passivation material is coplanar with a bottommost surface of each of the adjacent conductive elements. The method further includes depositing a second passivation material on the substrate, wherein the second passivation material contacts a sidewall of each of the adjacent conductive elements and a sidewall of the first passivation material, a bottommost surface of the second passivation material is coplanar with the bottommost surface of each of the adjacent conductive elements, and the second passivation material is different from the first passivation material.Type: ApplicationFiled: March 19, 2021Publication date: July 8, 2021Inventors: Chih-Ming LEE, Hung-Che LIAO, Kun-Tsang CHUANG, Wei-Chung LU
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Patent number: 10964589Abstract: A semiconductor structure includes a substrate, first and second conductors, a passivation material, and a passivation sidewall block. The first and second conductors are on the substrate. The passivation material is between the first and second conductors. The passivation sidewall block is on sidewalls of the first and second conductors and the passivation material.Type: GrantFiled: August 13, 2017Date of Patent: March 30, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chih-Ming Lee, Hung-Che Liao, Kun-Tsang Chuang, Wei-Chung Lu
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Publication number: 20210057517Abstract: The present disclosure relates to an apparatus that includes a bottom electrode and a dielectric structure. The dielectric structure includes a first dielectric layer on the bottom electrode and the first dielectric layer has a first thickness. The apparatus also includes a blocking layer on the first dielectric layer and a second dielectric layer on the blocking layer. The second dielectric layer has a second thickness that is less than the first thickness. The apparatus further includes a top electrode over the dielectric structure.Type: ApplicationFiled: August 23, 2019Publication date: February 25, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Ting CHEN, Tsung-Han Tsai, Kun-Tsang Chuang, Po-Jen Wang, Ying-Hao Chen, Chien-Cheng Chuang
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Publication number: 20210043566Abstract: A method includes capturing an image of a wafer, the wafer comprising a first conductive contact over an active region of the wafer and a second conductive contact over a shallow trench isolation (STI) region abutting the active region; identifying a brightness of a first contact region in the captured image at which the first conductive contact is rendered; identifying a brightness of a second contact region in the captured image at which the second conductive contact is rendered; and in response to the identified brightness of the first contact region in the captured image being substantially the same as the identified brightness of the second contact region in the captured image, determining that the second conductive contact is shorted to the first conductive contact.Type: ApplicationFiled: October 23, 2020Publication date: February 11, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Hsung HO, Chia-Yi TSENG, Chih-Hsun LIN, Kun-Tsang CHUANG, Yung-Lung HSU
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Publication number: 20210013343Abstract: The present disclosure describes a method that mitigates the formation of facets in source/drain silicon germanium (SiGe) epitaxial layers. The method includes forming an isolation region around a semiconductor layer and a gate structure partially over the semiconductor layer and the isolation region. Disposing first photoresist structures over the gate structure, a portion of the isolation region, and a portion of the semiconductor layer and doping, with germanium (Ge), exposed portions of the semiconductor layer and exposed portions of the isolation region to form Ge-doped regions that extend from the semiconductor layer to the isolation region. The method further includes disposing second photoresist structures over the isolation region and etching exposed Ge-doped regions in the semiconductor layer to form openings, where the openings include at least one common sidewall with the Ge-doped regions in the isolation region. Finally the method includes growing a SiGe epitaxial stack in the openings.Type: ApplicationFiled: September 24, 2020Publication date: January 14, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Gulbagh SINGH, Hsin-Chu CHEN, Kun-Tsang CHUANG
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Patent number: 10886165Abstract: Negatively sloped isolation structures are formed on a semiconductor substrate to isolate devices from one another. The negatively sloped isolation structures have a top critical dimension which is smaller than a bottom critical dimension. The negatively sloped isolation structures may penetrate through an insulator layer of a silicon-on-insulator structure arrangement.Type: GrantFiled: June 15, 2018Date of Patent: January 5, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Gulbagh Singh, Tsung-Han Tsai, Kun-Tsang Chuang
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Publication number: 20200395459Abstract: A semiconductor arrangement includes a gate structure disposed between a first source/drain region and a second source/drain region and a first contact disposed over the first source/drain region. The semiconductor arrangement includes a second contact disposed over the second source/drain region and an airgap disposed between the first contact and the second contact and over the gate structure.Type: ApplicationFiled: June 14, 2019Publication date: December 17, 2020Inventors: Gulbagh SINGH, Wang Po-Jen, Kun-Tsang Chuang, Tsung-Han Tsai
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Patent number: 10818595Abstract: A method of fabricating a semiconductor structure includes forming first and second features in a scribe region of a semiconductor substrate in which the first feature has a first electrical resistance, the second feature has a second electrical resistance, and the first electrical resistance is different form the second electrical resistance; forming an interlayer dielectric layer over the first and second features; and forming a first contact in the interlayer dielectric layer and connected to the first feature and a second contact in the interlayer dielectric layer and connected to the second feature.Type: GrantFiled: April 13, 2017Date of Patent: October 27, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yen-Hsung Ho, Chia-Yi Tseng, Chih-Hsun Lin, Kun-Tsang Chuang, Yung-Lung Hsu
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Patent number: 10790391Abstract: The present disclosure describes a method that mitigates the formation of facets in source/drain silicon germanium (SiGe) epitaxial layers. The method includes forming an isolation region around a semiconductor layer and a gate structure partially over the semiconductor layer and the isolation region. Disposing first photoresist structures over the gate structure, a portion of the isolation region, and a portion of the semiconductor layer and doping, with germanium (Ge), exposed portions of the semiconductor layer and exposed portions of the isolation region to form Ge-doped regions that extend from the semiconductor layer to the isolation region. The method further includes disposing second photoresist structures over the isolation region and etching exposed Ge-doped regions in the semiconductor layer to form openings, where the openings include at least one common sidewall with the Ge-doped regions in the isolation region. Finally the method includes growing a SiGe epitaxial stack in the openings.Type: GrantFiled: August 30, 2018Date of Patent: September 29, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Gulbagh Singh, Hsin-Chi Chen, Kun-Tsang Chuang
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Publication number: 20200295046Abstract: Bulk semiconductor substrates configured to exhibit semiconductor-on-insulator (SOI) behavior, and corresponding methods of fabrication, are disclosed herein. An exemplary bulk substrate configured to exhibit SOI behavior includes a first isolation trench that defines a channel region of the bulk substrate and a second isolation trench that defines an active region that includes the channel region. The first isolation trench includes a first isolation trench portion and a second isolation trench portion disposed over the first isolation trench portion. A first isolation material fills the first isolation trench portion, and an epitaxial material fills the second isolation trench portion. The epitaxial material is disposed on the first isolation material. A second isolation material fills the second isolation trench. A portion of the bulk substrate underlying the first isolation trench and the channel region is configured to have a higher resistance than the bulk substrate.Type: ApplicationFiled: June 1, 2020Publication date: September 17, 2020Inventors: Gulbagh Singh, Kun-Tsang Chuang, Hsin-Chi Chen
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Publication number: 20200251554Abstract: The present disclosure describes a fabrication method that prevents divots during the formation of isolation regions in integrated circuit fabrication. In some embodiments, the method of forming the isolation regions includes depositing a protective layer over a semiconductor layer; patterning the protective layer to expose areas of the semiconductor layer; depositing an oxide on the exposed areas the semiconductor layer and between portions of the patterned protective layer; etching a portion of the patterned protective layer to expose the semiconductor layer; etching the exposed semiconductor layer to form isolation openings in the semiconductor layer; and filling the isolation openings with a dielectric to form the isolation regions.Type: ApplicationFiled: April 22, 2020Publication date: August 6, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Gulbagh SINGH, Hsin-Chi CHEN, Kun-Tsang CHUANG
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Patent number: 10672777Abstract: A method for manufacturing a semiconductor device having a multi-height structure is provided. The semiconductor device having a multi-height structure includes a silicon substrate. A first structure and a second structure are respectively formed on the silicon substrate and connected to each other. A limiting block is formed on the second structure and near an edge of the second structure beside the first structure. A bottom anti-reflection coating (BARC) layer is formed to blanketly cover the first structure, the second structure and the limiting block, in which the BARC layer includes a low-viscosity material, and the BARC layer overlying the top surface of the second structure has an external surface substantially parallel to the top surface of the second structure. Control gates are formed on the external surface of the BARC layer.Type: GrantFiled: February 18, 2019Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuan-Wei Su, Yung-Lung Hsu, Chih-Hsun Lin, Kun-Tsang Chuang, Chiang-Ming Chuang, Chia-Yi Tseng
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Patent number: 10672795Abstract: Bulk semiconductor substrates configured to exhibit semiconductor-on-insulator (SOI) behavior, and corresponding methods of fabrication, are disclosed herein. An exemplary bulk substrate configured to exhibit SOI behavior includes a first isolation trench that defines a channel region of the bulk substrate and a second isolation trench that defines an active region that includes the channel region. The first isolation trench includes a first isolation trench portion and a second isolation trench portion disposed over the first isolation trench portion. A first isolation material fills the first isolation trench portion, and an epitaxial material fills the second isolation trench portion. The epitaxial material is disposed on the first isolation material. A second isolation material fills the second isolation trench. A portion of the bulk substrate underlying the first isolation trench and the channel region is configured to have a higher resistance than the bulk substrate.Type: GrantFiled: August 30, 2018Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Gulbagh Singh, Kun-Tsang Chuang, Hsin-Chi Chen
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Publication number: 20200152648Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.Type: ApplicationFiled: January 13, 2020Publication date: May 14, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Hsuan Liu, Chiang-Ming Chuang, Chih-Ming Lee, Kun-Tsang Chuang, Hung-Che Liao, Chia-Ming Pan, Hsin-Chi Chen
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Publication number: 20200135875Abstract: The present disclosure relates to a semiconductor structure includes a substrate with a top surface and first and second devices formed on the top surface of the substrate. The semiconductor structure also includes a deep isolation structure formed in the substrate and between the first and second devices. The deep isolation structure includes a top portion formed at the top surface and having a top width and a bottom surface having a bottom width larger than the top width.Type: ApplicationFiled: December 30, 2019Publication date: April 30, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Gulbagh SINGH, Tsung-Han TSAI, Kun-Tsang CHUANG
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Patent number: 10636870Abstract: The present disclosure describes a fabrication method that prevents divots during the formation of isolation regions in integrated circuit fabrication. In some embodiments, the method of forming the isolation regions includes depositing a protective layer over a semiconductor layer; patterning the protective layer to expose areas of the semiconductor layer; depositing an oxide on the exposed areas the semiconductor layer and between portions of the patterned protective layer; etching a portion of the patterned protective layer to expose the semiconductor layer; etching the exposed semiconductor layer to form isolation openings in the semiconductor layer; and filling the isolation openings with a dielectric to form the isolation regions.Type: GrantFiled: August 15, 2018Date of Patent: April 28, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Gulbagh Singh, Hsin-Chi Chen, Kun-Tsang Chuang
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Patent number: 10636695Abstract: Negatively sloped isolation structures are formed on a semiconductor substrate to isolate devices from one another. The negatively sloped isolation structures have a top critical dimension which is smaller than a bottom critical dimension. The negatively sloped isolation structures may penetrate through an insulator layer of a silicon-on-insulator structure arrangement.Type: GrantFiled: September 11, 2019Date of Patent: April 28, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Gulbagh Singh, Tsung-Han Tsai, Kun-Tsang Chuang
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Publication number: 20200058736Abstract: The present disclosure describes a fabrication method that prevents divots during the formation of isolation regions in integrated circuit fabrication. In some embodiments, the method of forming the isolation regions includes depositing a protective layer over a semiconductor layer; patterning the protective layer to expose areas of the semiconductor layer; depositing an oxide on the exposed areas the semiconductor layer and between portions of the patterned protective layer; etching a portion of the patterned protective layer to expose the semiconductor layer; etching the exposed semiconductor layer to form isolation openings in the semiconductor layer; and filling the isolation openings with a dielectric to form the isolation regions.Type: ApplicationFiled: August 15, 2018Publication date: February 20, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Gulbagh Singh, Hsin-Chi Chen, Kun-Tsang Chuang