Abstract: The present invention discloses a detection method, a system, an electronic equipment, and a storage medium of product test data, where the detection method includes: obtaining historical test data of historical batches of products; screening the historical test data to obtain intermediate test data; grouping the intermediate test data based on preset test parameters to obtain first groups; obtaining distribution patterns of the first groups based on the intermediate test data of the first groups; when the distribution pattern is a preset distribution pattern, using the first group corresponding to the distribution pattern as a target group; and obtaining a target test limit value based on the intermediate test data corresponding to the target group. In the present invention, the test limit value can be adjusted dynamically and adaptively, and chip test data with abnormal data can be effectively detected in real time, which improves test quality of the chip.

Abstract: A technique for matching the throughput between writing into and reading from a memory can include receiving, in parallel, computational results in a high precision format for storing into the memory at a first frequency, and storing the computational results in the memory. The technique may further include rounding the computational results using round-to-the-nearest-even or stochastic rounding to down-convert the computational results from the high precision format to a low precision format in parallel, and outputting the computational results in the low precision format in parallel from the memory at a second frequency.

Abstract: Provided in the present disclosure are a Zika/dengue vaccine and its application thereof. The present disclosure introduces a mutation into the E-protein FL fusion region of the Zika virus or dengue virus. Antigens with said mutations are unable to bind to antibodies that causes ADE. After immunization with the vaccine of the present disclosure acquired from the said antigens, production of FL epitope-induced antibodies can be prevented, thereby reducing or eliminating the ADE effect.

Abstract: The present disclosure provides a gearbox and a vehicle, and relates to the field of vehicles technologies. The gearbox includes an output shaft and two drive assemblies, wherein each of the two drive assemblies is used to drive the output shaft; the drive assembly includes an electric machine, a reduction gear set, and a gear transmission assembly in transmission connection with the output shaft, and the electric machine is in transmission connection with the gear transmission assembly through the reduction gear set; the gear transmission assembly includes at least three gear pairs, and transmission ratios of respective gear pairs in the at least three gear pairs are different; and in response to the gearbox being in a first transmission mode, the reduction gear set is in transmission connection with the output shaft through one of the at least three gear pairs.

Abstract: A direct memory access (DMA) engine may receive a first indication that memory descriptors for a DMA operation are ready to be fetched from a memory. The DMA engine may prefetch the memory descriptors from the memory without waiting for memory locations specified in the memory descriptors to be ready for access. The DMA engine may receive a second indication that the memory locations specified in the memory descriptors are ready to be accessed. The DMA engine may execute the DMA operation based on the memory descriptors upon receiving the second indication.

Abstract: A method of chemical mechanical polishing includes bringing a conductive layer of a substrate into contact with a polishing pad, supplying a polishing liquid to the polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, and determining a sequence of thickness values for the conductive layer based on the sequence of signal values. Determining the sequence of thickness values includes at least partially compensating for a contribution of the polishing liquid to the signal values.

Abstract: In one example, an apparatus comprises: a direct memory access (DMA) descriptor queue that stores DMA descriptors, each DMA descriptor including an indirect address; an address translation table that stores an address mapping between indirect addresses and physical addresses; and a DMA engine configured to: fetch a DMA descriptor from the DMA descriptor queue to the address translation table to translate a first indirect address of the DMA descriptor to a first physical address based on the address mapping, and perform a DMA operation based on executing the DMA descriptor to transfer data to or from the first physical address.

Abstract: An air conditioner indoor unit includes a housing, a panel, a fan assembly, a first air guide assembly, and a first driving assembly. The panel includes a first air outlet. The first air guide assembly is located on a side of the panel away from the housing, and a second air outlet is constituted between an edge of the first air guide assembly and an edge of the first air outlet. The first driving assembly is configured to drive the first air guide assembly to move relative to the panel, so as to change a size of the second air outlet to adjust a flow direction of air flowing out from the second air outlet. The first air guide assembly includes a flow direction changing structure, and the flow direction changing structure is configured to move in a direction different from a moving direction of the first air guide assembly.

Abstract: A method of processing a substrate includes polishing a front surface of a substrate on a first pad coupled to a first platen. The method further includes transferring the substrate from the first pad to a second pad coupled to a second platen with a carrier head. The method further includes moving the carrier head to a scan position to place an edge of the substrate above an orientation sensor disposed at a rotational center of the second pad. The method further includes scanning the edge of the substrate with the orientation sensor to produce a signal. The method further includes analyzing the signal to locate a reference mark of the substrate to determine a rotational orientation of the substrate relative to the carrier head.

Abstract: During polishing of a backside conductive layer, a sensor of an in-situ eddy current monitoring system is repeatedly swept across the substrate so that each respective sweep of the sensor generates a respective signal trace that includes a sequence of signal values. For each respective signal trace, the sequence of signal values is converted to a corresponding thickness trace that includes sequence of thickness values for different locations on the substrate, thus generating a sequence of thickness traces. For each respective thickness trace in the sequence of thickness traces, a plurality of minima in the respective thickness trace are identified. A sequence of layer thickness values over time is calculated based on the plurality of minima from the respective traces in the sequence of thickness traces. Conductive vias extend through the semiconductor wafer of the substrate to electrically connect the backside conductive layer to a front-side conductive layer.

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, a carrier head to hold a substrate such that a layer on the substrate contacts the polishing pad, an actuator that controls a radial position of the carrier head over the platen, an eddy current monitoring system, and a controller. The eddy current monitoring system includes a first plurality of eddy current sensors supported by the platen and arranged in a first ring at a first distance from an axis of rotation of the platen and a second plurality of eddy current sensors supported by the platen and arranged in a second ring at a larger second distance from the axis of rotation of the platen. The controller is configured to control the actuator such that the second plurality of sensors sweep only across an edge portion of the substrate held by the carrier head.

Abstract: During polishing of a stack of adjacent conductive layers on a substrate, an in-situ eddy current monitoring system measures sequence of characterizing values. A polishing rate is repeatedly calculated from the sequence of characterizing values repeatedly, one or more adjustments for one or more polishing parameters are repeatedly calculated based on a current polishing rate using a first control algorithm for an initial time period, a change in the polishing rate that meets at least one first predetermined criterion that indicates exposure of the underlying conductive layer is detected, and one or more adjustments for one or more polishing parameters are calculated based on the polishing rate using a different second control algorithm for a subsequent time period after detecting the change in the polishing rate.

Abstract: An ambient light bar includes: a printed circuit board (PCB) board; at least one beveled light emitting diode (LED) bead group and a lens assembly. The beveled LED bead group includes at least two beveled LED beads, and the at least two beveled LED beads are fixed on the PCB board according to a preset arrangement. A bevel angle is formed between a chip mounting face and a welding plane of each of the beveled LED beads, and the bevel angles of the at least two beveled LED beads are different. The lens assembly is covered above a light output side of the beveled LED bead group and is fixed on the PCB board.

Abstract: Techniques are provided for congestion aware placement of the fabric components of an interconnect in an integrated circuit device. A floorplan of the interconnect is projected on a virtual grid that includes placement locations for the fabric components. Locations of the fabric components can be initialized with the placement locations of the virtual grid. Updated locations for the placement of each of the fabric components on the virtual grid can be determined based on minimization of a total wirelength (TWL) cost function of all the nets in the interconnect. Timing slices are inserted in the interconnect after the placement of the fabric components at the updated locations. The floorplan information with the placement information of the fabric components and the timing slices can be used for the physical design of the interconnect to provide a timing clean result.

Abstract: A method of compensating for a contribution of conductivity of the semiconductor wafer to a measured trace by an in-situ electromagnetic induction monitoring system includes storing or generating a modified reference trace. The modified reference trace represents measurements of a bare doped reference semiconductor wafer by an in-situ electromagnetic induction monitoring system as modified by a neutral network. The substrate is monitored with an in-situ electromagnetic induction monitoring system to generate a measured trace that depends on a thickness of the conductive layer, and at least a portion of the measured trace is applied to a neural network to generate a modified measured trace. An adjusted trace is generated, including subtracting the modified reference trace from the modified measured trace.

Abstract: Techniques to reduce direct memory access (DMA) overhead may include retrieving an address translation descriptor from a descriptor queue of a DMA engine, and updating an address translation table in the DMA engine with address translation information obtained from the location indicated by the address translation descriptor. A set of memory descriptors is then obtained from the descriptor queue. The set of memory descriptors can be processed by determining that the addresses in the set of memory descriptors are to be translated using the address translation table, and performing memory access operations by using the address translation table to translate the addresses in the set of memory descriptors.

Abstract: An apparatus for processing a substrate, the apparatus comprising a polishing assembly and a controller. The polishing assembly is configured to (a) polish a surface of the substrate. The controller is configured to (b) detect a first substrate measurement corresponding to a first region of the substrate, (c) detect a second substrate measurement corresponding to a second region of the substrate; (d) determine a difference between the first substrate measurement at the first region and the second substrate measurement at the second region; stop the polishing of the surface of the substrate in response to a determination that the difference between the first substrate measurement and the second substrate measurement is within a tolerance threshold; and repeat (a)-(d) in response to a determination that the difference between the first substrate measurement and the second substrate measurement is outside of the tolerance threshold.

Abstract: A method of polishing a layer on the substrate at a polishing station includes the actions of monitoring the layer during polishing at the polishing station with an in-situ monitoring system to generate a plurality of measured signals for a plurality of different locations on the layer; generating, for each location of the plurality of different locations, an estimated measure of thickness of the location, the generating including processing the plurality of measured signals through a neural network; and at least one of detecting a polishing endpoint or modifying a polishing parameter based on each estimated measure of thickness.