Abstract: Aspects of the disclosure provide an apparatus that includes a receiving circuit and a processing circuit. The receiving circuit is configured to receive a satellite signal transmitted from a satellite. The satellite signal carries navigation bits that are transmitted with a navigation bit length. The processing circuit is configured to construct aiding navigation bits based on aiding ephemeris and almanac information that are provided by an aiding source other than the satellite signal. Further, the processing circuit is configured to strip the navigation bits from the satellite signal based on the aiding navigation bits to generate a post-stripping signal, and perform an integration on the post-stripping signal.

Abstract: The present disclosure relates to derivatized agelastatin compounds and methods for the treatment, prevention, or delay of cancer, comprising administering a therapeutically effect amount of the derivatized agelastatin compounds, a pharmaceutically acceptable salt thereof, or a composition thereof to a subject in need thereof. Methods for making the derivatized agelastatin compounds are also provided.

Abstract: A method of controlling processing of a substrate includes generating, based on a signal from an in-situ monitoring system, first and second sequences of characterizing values indicative of a physical property of a reference zone and a control zone, respectively, on a substrate. A reference zone rate and a control zone rate are determined from the first and sequence of characterizing values, respectively. An error value is determined by comparing characterizing values for the reference zone and control zone. An output parameter value for the control zone is generated based on at least the error value and a dynamic nominal control zone value using a proportional-integral-derivative control algorithm, and the dynamic nominal control zone value is generated in a second control loop based on at least the reference zone rate and the control zone rate. The control zone of the substrate is processed according to the output parameter value.

Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.

Abstract: A method of chemical mechanical polishing includes bringing a substrate having a conductive layer disposed over a semiconductor wafer into contact with a polishing pad, generating relative motion between the substrate and the polishing pad, monitoring the substrate with an in-situ electromagnetic induction monitoring system as the conductive layer is polished to generate a sequence of signal values that depend on a thickness of the conductive layer, determining a sequence of thickness values for the conductive layer based on the sequence of signal values, and at least partially compensating for a contribution of conductivity of the semiconductor wafer to the signal values.

Abstract: A method and system for determining a thickness of a conductive film layer deposited on a wafer include at two eddy current sensors to take electrical resistivity measurements of the conductive film layer on the wafer as the wafer is being transported by a robot arm, a temperature sensor to determine a temperature change of the wafer during the electrical resistivity measurement, and a processing device to adjust a value of the electrical resistivity measurement by an amount based on the determined temperature change and to determine a thickness of the conductive film layer using the adjusted value of the electrical resistivity measurement and a previously determined correlation between electrical resistivity measurement values and respective thicknesses of conductive film layers. Alternatively, the wafer can be kept at a steady temperature when taking electrical resistivity measurements of the conductive film layer to determine a thickness of the conductive film layer.

Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

Abstract: A method and system of analyzing a symbolic sequence is provided. Metadata of a symbolic sequence is received from a computing device of an owner. A set of R random sequences are generated based on the received metadata and sent to the computing device of the owner of the symbolic sequence for computation of a feature matrix based on the set of R random sequences and the symbolic sequence. The feature matrix is received from the computing device of the owner. Upon determining that an inner product of the feature matrix is below a threshold accuracy, the iterative process returns to generating R random sequences. Upon determining that the inner product of the feature matrix is at or above the threshold accuracy, the feature matrix is categorized based on machine learning. The categorized global feature matrix is sent to be displayed on a user interface of the computing device of the owner.

Abstract: Technologies for interpretable general reasoning system using key value memory networks are described. Aspects include processing a complex question having at least two subject and relation pairs into keys in key memory locations, and importing entities of a knowledge base as values into value memory locations based on the keys and importing a STOP key. Other aspects include generating a query representation, a key representation of the keys in the key memory locations, and a value representation of the values in the value memory locations; and updating the query representation into an updated query representation over one or more iterations by combining the query representation with the value representation and the key representations until the STOP key is detected.

Abstract: Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

Abstract: The present invention provides a phase transition material fluid and a proppant formed therefrom, wherein the components for preparing the phase transition material fluid comprise in percentages by mass: a supramolecular building block 10 to 60 wt %, a supramolecular functional unit 20 to 50 wt %, a dispersant 0.1 to 2 wt %, an inorganic co-builder 0.1 to 1 wt %, an initiator 0.1 to 1 wt %, the balance being a solvent. The supramolecular building block comprises a melamine-based substance and/or a triazine-based substance; the supramolecular functional unit comprises a dicyclopentadiene resin; and the dispersant includes a hydroxyl-bearing polysaccharide substance and a surfactant. After the phase transition material fluid enters the reservoir, it may form a solid substance to prop the fracture under the action of supramolecular chemistry and physics.

Abstract: A method of polishing includes polishing a layer of a substrate, monitoring the layer of the substrate with an in-situ monitoring system to generate signal that depends on a thickness of the layer, filtering the signal to generate a filtered signal, determining an adjusted threshold value from an original threshold value and a time delay value representative of time required for filtering the signal, and triggering a polishing endpoint when the filtered signal crosses the adjusted threshold value.

Abstract: An apparatus for chemical mechanical polishing includes a support for a polishing pad having a polishing surface, and an electromagnetic induction monitoring system to generate a magnetic field to monitor a substrate being polished by the polishing pad. The electromagnetic induction monitoring system includes a core and a coil wound around a portion of the core. The core includes a back portion, a center post extending from the back portion in a first direction normal to the polishing surface, and an annular rim extending from the back portion in parallel with the center post and surrounding and spaced apart from the center post by a gap. A width of the gap is less than a width of the center post, and a surface area of a top surface of the annular rim is at least two times greater than a surface area of a top surface of the center post.

Abstract: A system and methods comprise a touchscreen at a premises. The touchscreen includes a processor coupled to a security system at the premises. User interfaces are presented via the touchscreen. The user interfaces include a security interface that provides control of functions of the security system and access to data collected by the security system, and a network interface that provides access to network devices. Network devices at the premises are coupled to the touchscreen. Application programming interfaces (APIs) are coupled to the processor and provide access to the plurality of network devices. A security server at a remote location is coupled to the touchscreen. The security server comprises a client interface through which remote client devices exchange data with the touchscreen and security system, a web application that accesses a first set of the APIs, and a server application that accesses a second set of the APIs.

Abstract: A system and methods comprise a touchscreen at a premises. The touchscreen includes a processor coupled to a security system at the premises. User interfaces are presented via the touchscreen. The user interfaces include a security interface that provides control of functions of the security system and access to data collected by the security system, and a network interface that provides access to network devices. Network devices at the premises are coupled to the touchscreen. Application programming interfaces (APIs) are coupled to the processor and provide access to the plurality of network devices. A security server at a remote location is coupled to the touchscreen. The security server comprises a client interface through which remote client devices exchange data with the touchscreen and security system, a web application that accesses a first set of the APIs, and a server application that accesses a second set of the APIs.

Abstract: The present invention discloses a phase change fracturing fluid system for phase change fracturing, including the following components in percentage by weight: 10%-40% of supramolecular construction unit, 0-40% of supramolecular function unit, 0.5%-2% of surfactant, 0-5% of inorganic salt, 0.5%-2% of oxidizing agent, 0-2% of cosolvent and the remaining of solvent. The supramolecular construction unit is melamine, triallyl isocyanurate, or a mixture thereof. The supramolecular function unit is vinyl acetate, acrylonitrile, or a mixture thereof. The solvent is methylbenzene, ethylbenzene, o-xylene, m-xylene or p-xylene. In the fracturing construction process, a conventional fracturing fluid is used for fracturing a formation first; the phase change fracturing fluid is then injected into the formation, or the phase change fracturing fluid and other fluids which cannot be subjected to phase change are injected into the formation together.

Abstract: An image classification method is provided. The method includes: inputting a to-be-classified image into a plurality of neural network models; obtaining data output by multiple non-input layers specified by each neural network model to generate a plurality of image features corresponding to the plurality of neural network models; respectively inputting the plurality of corresponding image features into linear classifiers, each of the linear classifiers being trained by one of the plurality of neural network models for determining whether an image belongs to a preset class; obtaining, using each neural network model, a corresponding probability that the to-be-classified image comprises an object image of the preset class; and determining, according to each obtained probability, whether the to-be-classified image includes the object image of the preset class.

Abstract: A phase-change hydraulic fracturing process, including the following steps: (1) injecting clean water or conventional fracturing fluid to a formation, so that the formation fractures; (2) placing non-phase-change liquid and phase-change liquid in different liquid mixing tanks and injecting into a shaft at the same time, an injection volume ratio of the non-phase-change liquid to the phase-change liquid is (0-0.7):(0.3-1); (3) injecting a displacement fluid into the shaft, so that the non-phase-change liquid and the phase-change liquid in the shaft completely enter a reservoir; (4) performing well shut-in and pressure-out for 30-200 min, so that solid-phase matters generated by the phase-change liquid are laid in the fracture; and (5) relieving pressure to finish the construction.

Abstract: Disclosed is a water purifier comprising: a water route integrated device, disposed in the water purifier; a pre-filter cartridge, disposed on a first card interface of a first auxiliary water route plate; a rear filter cartridge, disposed on a second card interface of the first auxiliary water route plate; a reverse osmosis (RO) film filter cartridge, disposed on a third card interface of a main water route plate; a standard piece module, disposed on the main water route plate, and is on a same side of the first auxiliary water route plate; and a pump module, disposed on the main water route plate, and is on a same side of the second auxiliary water route plate.

Abstract: A method of controlling polishing includes polishing a substrate at a first polishing station, monitoring the substrate with a first eddy current monitoring system to generate a first signal, determining an ending value of the first signal for an end of polishing of the substrate at the first polishing station, determining a first temperature at the first polishing station, polishing the substrate at a second polishing station, monitoring the substrate with a second eddy current monitoring system to generate a second signal, determining a starting value of the second signal for a start of polishing of the substrate at the second polishing station, determining a gain for the second polishing station based on the ending value, the starting value and the first temperature, and calculating a third signal based on the second signal and the gain.