Abstract: A carry-lookahead adder is provided. A first mask unit performs first mask operation on first input data with the first mask value to obtain first masked data. A second mask unit performs second mask operation on second input data with the second mask value to obtain second masked data. A first XOR gate receives the first and second mask values to provide a variable value. A half adder receives the first and second masked data to generate a propagation value and an intermediate generation value. A third mask unit performs third mask operation on the propagation value with the third mask value to obtain the third masked data. A carry-lookahead generator provides the carry output and the carry value according to carry input, the generation value, and the propagation value. The second XOR gate receives the third masked data and the carry value to provide the sum output.

Abstract: A method for protecting and managing keys is provided. The method includes the following steps. An OTF cipher transmits a request message to a cryptographic engine to request that the cryptographic engine obtain a wrap key when a key is located in an external memory. The cryptographic engine requests the wrap key from a key store. The key store reads and transmits the wrap key to the cryptographic engine. The OTF cipher requests access to a protection key from the key store, and the key store requests that an external memory controller read the protection key from the external memory. The external memory transmits the protection key to the cryptographic engine. The cryptographic engine generates the key according to the wrap key and the protection key and transmits the key to the OTF cipher. The OTF cipher uses the key to perform an encryption and decryption process.

Abstract: A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.

Abstract: A one-time programmable memory device is provided in the invention. The one-time programmable memory device includes a one-time programmable memory and a memory controller. The one-time programmable memory includes a first block, a second block and a third block. The first block includes a plurality of initial-address-unit groups and each initial-address-unit group includes a plurality of initial address units and each initial address unit corresponds to a variable to record the storage address of its corresponding variable. The second block includes a plurality of initial address control units and each initial address control unit corresponds to one of the variables to record the corresponding initial-address-unit group of each variable. The third block includes a plurality of storage units and each storage unit has a corresponding storage address. The memory controller is configured to assign the storage addresses to the variables.

Abstract: A data-processing device is provided. The data-processing device includes: a flash memory, a computation unit, and a flash-memory controller. The flash-memory controller is electrically connected to the computation unit, and configured to control access to the flash memory. The flash-memory controller allocates a first execute-only memory (XOM) setting and a second XOM setting in a first memory bank and a second memory bank of the flash memory, respectively. The flash-memory controller allocates one or more XOM spaces in the flash memory according to the first XOM setting or the second XOM setting.

Abstract: A semiconductor structure and a method for forming a semiconductor structure are provided. A substrate having a cell region and a mark region is received. A dielectric layer is etched to expose a conductive line in the cell region and form a trench in the mark region. A conductive layer is formed over the cell region and in the trench. The conductive layer is etched to form a bottom electrode via in the cell region and a first mark layer in the trench.

Abstract: A one-time programmable memory device is provided in the invention. The one-time programmable memory device includes a one-time programmable memory and a memory controller. The one-time programmable memory includes a first block and a second block. The first block includes a plurality of initial address units and each initial address unit corresponds to a variable to record the storage address of its corresponding variable, and wherein the second block includes a plurality of storage units and each storage unit has a corresponding storage address. The memory controller is coupled to the one-time programmable memory. The memory controller allocates the storage address to the variable. The content of each variable is stored in the storage unit corresponding to the storage address corresponding to the variable. The number of initial address units is smaller than the number of storage units.

Abstract: A method for fabricating magnetic tunnel junction (MTJ) pillars is provided. The method includes following operations. A MTJ stack of layers including a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer is provided. A first patterning step is carried out by using a reactive ion etching. In the first patterning step, the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalk of the pillar structures.

Abstract: An electronic device is provided, including a first substrate, a second substrate and a blocking component. The second substrate is opposite to the first substrate. The second substrate has a cutting edge extending along a cutting direction. The blocking component is disposed between the first substrate and the second substrate. The blocking component extends along the cutting direction and is disposed corresponding to the cutting edge.

Abstract: A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.

Abstract: A one-time programmable memory device is provided in the invention. The one-time programmable memory device includes a one-time programmable memory and a memory controller. The one-time programmable memory includes a first block, a second block and a third block. The first block includes a plurality of initial-address-unit groups and each initial-address-unit group includes a plurality of initial address units and each initial address unit corresponds to a variable to record the storage address of its corresponding variable. The second block includes a plurality of initial address control units and each initial address control unit corresponds to one of the variables to record the corresponding initial-address-unit group of each variable. The third block includes a plurality of storage units and each storage unit has a corresponding storage address. The memory controller is configured to assign the storage addresses to the variables.

Abstract: A one-time programmable memory device is provided in the invention. The one-time programmable memory device includes a one-time programmable memory and a memory controller. The one-time programmable memory includes a first block and a second block. The first block includes a plurality of initial address units and each initial address unit corresponds to a variable to record the storage address of its corresponding variable, and wherein the second block includes a plurality of storage units and each storage unit has a corresponding storage address. The memory controller is coupled to the one-time programmable memory. The memory controller allocates the storage address to the variable. The content of each variable is stored in the storage unit corresponding to the storage address corresponding to the variable. The number of initial address units is smaller than the number of storage units.

Abstract: A foldable storage box includes a bottom panel, a rear panel, two lateral panels, a front panel, and a lid. The bottom panel has a rear edge with a first pivotal connection portion, two lateral edges each with a second pivotal connection portion, and a front edge with a third pivotal connection portion. The rear panel has a first bottom edge with a fourth pivotal connection portion pivotally connected to the first pivotal connection portion. Each lateral panel has a second bottom edge with a fifth pivotal connection portion pivotally connected to one of the second pivotal connection portions. The front panel has a third bottom edge with a sixth pivotal connection portion pivotally connected to the third pivotal connection portion. The lid is detachably connected to the rear panel, the two lateral panels, and the front panel to form the foldable storage box and the receiving space therein.

Abstract: The present invention provides a conjugated diene polymer, formulations, and manufacturing methods for the same. The present invention provides a conjugated diene polymer obtained by polymerizing conjugated diene monomers and vinyl aromatic monomers using an initiator by way of an anionic polymerization, the conjugated diene polymer comprising a plurality of blocks having more than 6 consecutive vinyl aromatic units, wherein a vinyl aromatic monomer content of the plurality of blocks having more than 6 consecutive vinyl aromatic units is less than 5 wt % based on a total vinyl aromatic monomer content of the conjugated diene polymer. The present invention also provides formulations for preparing the conjugated diene polymer and the manufacturing methods for the same.

Abstract: A scraping tool includes a first holding member having a first through-groove between a first holding portion and a first connecting portion. A second holding member includes a second through-groove between a second holding portion and a second connecting portion. The second connecting portion is connected to the first connecting portion to permit the second holding member to sway relative to the first holding member between a holding position and an extended position. A locking device includes first and second abutting portion respectively abutting against the first and second holding member and a sliding portion slideably extending through the first and second through-groove. The locking device is movable relative to the first and second holding member between a locking position in which the second holding member is in the holding position and a release position in which the second holding member is movable to the extended position.

Abstract: An abnormal power failure control system and a method thereof are provided. The system includes a first comparator, a boost-buck control circuit, a logic control circuit, a switch circuit, a current sensor circuit, a current slope comparator circuit, a second comparator, and a mode switching circuit. The first comparator compares a stored power with a first reference voltage source to output a first voltage compared signal. The boost-buck control circuit outputs a boost-buck control signal and the logic control circuit accordingly controls the switch circuit. The current slope comparator circuit determines change of a slope of a current of the switch circuit. The second comparator compares the stored power with the second reference voltage to output a second voltage compared signal. The mode switching circuit instructs the logic control circuit to control the switch circuit.

Abstract: A data-processing device is provided. The data-processing device includes: a flash memory, a computation unit, and a flash-memory controller. The flash-memory controller is electrically connected to the computation unit, and configured to control access to the flash memory. The flash-memory controller allocates a first execute-only memory (XOM) setting and a second XOM setting in a first memory bank and a second memory bank of the flash memory, respectively. The flash-memory controller allocates one or more XOM spaces in the flash memory according to the first XOM setting or the second XOM setting.

Abstract: A herbal composition for relieving symptoms of diabetic retinopathy includes 40 wt % of an ethanol extract of Astragalus membranaceus, 8 wt % of an ethanol extract of Angelica sinensis and 52 wt % of a water extract of Dendrobium officinale. A method for diabetic retinopathy by administrating the herbal composition to a subject in need is also provided.