Abstract: A lateral-diffused metal oxide semiconductor device (LDMOS) includes a substrate, a first deep well, at least a field oxide layer, a gate, a second deep well, a first dopant region, a drain and a common source. The substrate has the first deep well which is of a first conductive type. The gate is disposed on the substrate and covers a portion of the field oxide layer. The second deep well having a second conductive type is disposed in the substrate and next to the first deep well. The first dopant region having a second conductive type is disposed in the second deep well. The doping concentration of the first dopant region is higher than the doping concentration of the second deep well.

Abstract: A suspension for a HGA comprises a flexure having a suspension tongue arranged for supporting a slider, which comprising a stainless steel layer and a dielectric layer formed thereon. The dielectric layer has a top surface and bottom surface, a plurality of bonding pads are formed on the top surface at a leading portion of the suspension tongue and arranged for connecting with the slider, and at least two separate supporting pieces are formed on the bottom surface and located at a corresponding position with the bonding pads, thereby releasing stress generated on the bonding pads. The invention also discloses a HGA and a disk drive unit with the same. The invention can release the stress generated on the bonding pads of the suspension, reduce the temperature impact to the suspension, and in turn, reduce thermal crown change of the slider, thereby improving the reading and writing performance.

Abstract: A controller used in a light emitting element driving circuit, wherein the light emitting element driving circuit has a power converter configured to provide an output current for the light emitting element. The controller has a dimming processing unit and a current control unit. The dimming processing unit is configured to receive a first dimming signal with a first duty cycle and a second dimming signal with a second duty cycle, and to generate a second dimming processing signal relative to the product of the first duty cycle and the second duty cycle. The current control unit is coupled between the dimming processing unit and the power converter, and is configured to generate a control signal for the power converter based on the second dimming processing signal and a feedback signal indicating the output current.

Abstract: A high voltage switching device and associated method of manufacturing, the high voltage switching device having a substrate, an epitaxial layer, a source region, a drain region, a drift region, a gate oxide, a filed oxide, a gate and a snake shaped poly.

Abstract: A multilayered miniature coil component, comprising a plurality of coil layers and insulating layers, the plurality of coil layers and insulating layers being alternately overlapped on each other. Each of the plurality of coil layers includes a plurality of coils and wires, each of the coils has a first and a second end, and a plurality of first conductive portions is disposed on each of the coil layers, at least one second conductive portion is disposed on at least one of the coil layers, and each of the plurality of insulating layers has a plurality of conductive through holes disposed correspondingly to the first conductive portions and the second conductive portions, thus through the plurality of wires, the first and the second conductive portions and the conductive through holes, the plurality of coils in each of the coil layers are composed as a circuit loop.

Abstract: The apparatus and method for measuring displacement according to the present invention includes a first beam and a second beam. A first reflection structure reflects a first beam to the surface of an object under test; and a second reflection structure reflects a second beam to the surface of the object under test. The reflected first beam and the reflected second beam have an optical path difference. The object under test scatters a scattering beam of gathering the first and second beams. The scattering beam has an interference signal. A photodetector receives the interference signal of the scattering beam. Then an operational unit receives and computes the interference signal for producing a displacement value. By using the first and second reflection structures, the first and second beams split from an incident beam produce an optical path difference. Thereby, the structure of the apparatus for measuring displacement can be simplified.

Abstract: A high voltage semiconductor device is provided. A first-polarity buried layer is formed in the substrate. A first high voltage second-polarity well region is located over the first-polarity buried layer. A second-polarity base region is disposed within the first high voltage second-polarity well region. A source region is disposed within the second-polarity base region. A high voltage deep first-polarity well region is located over the first-polarity buried layer and closely around the first high voltage second-polarity well region. A first-polarity drift region is disposed within the high voltage deep first-polarity well region. A gate structure is disposed over the substrate. A second high voltage second-polarity well region is located over the first-polarity buried layer and closely around the high voltage deep first-polarity well region. A deep first-polarity well region is located over the first-polarity buried layer and closely around the second high voltage second-polarity well region.

Abstract: The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a second conductive type. The second doped region, which has a racetrack-shaped layout, is disposed in the first doped region, and has a long axis. The third doped region is disposed in the second doped region. The gate structure is disposed on the first doped region and the second doped region at a side of the third doped region. The contact metal is disposed on the first doped region at a side of the second doped region extending out along the long axis, and is in contact with the first doped region.

Abstract: A lateral-diffusion metal-oxide-semiconductor device includes a semiconductor substrate having at least a field oxide layer, a gate having a layout pattern of a racetrack shape formed on the substrate, a common source formed in the semiconductor substrate and enclosed by the gate, and a drain surrounding the gate and formed in the semiconductor substrate. The gate covers a portion of the field oxide layer. The common source includes a first doped region having a first conductive type and a plurality of islanding second doped regions having a second conductive type. The drain includes a third doped region having the first conductive type. The third doped region overlaps a portion of the field oxide layer and having an overlapping area between the third doped region and the field oxide layer.

Abstract: A high voltage semiconductor device is provided. A first-polarity buried layer is formed in the substrate. A first high voltage second-polarity well region is located over the first-polarity buried layer. A second-polarity base region is disposed within the first high voltage second-polarity well region. A source region is disposed within the second-polarity base region. A high voltage deep first-polarity well region is located over the first-polarity buried layer and closely around the first high voltage second-polarity well region. A first-polarity drift region is disposed within the high voltage deep first-polarity well region. A gate structure is disposed over the substrate. A second high voltage second-polarity well region is located over the first-polarity buried layer and closely around the high voltage deep first-polarity well region. A deep first-polarity well region is located over the first-polarity buried layer and closely around the second high voltage second-polarity well region.

Abstract: A multilayered miniature coil component, comprising a plurality of coil layers and insulating layers, the plurality of coil layers and insulating layers being alternately overlapped on each other.

Abstract: A motor device includes a main body, an assembling body, a stator and a rotor. The main body includes a first bearing hole and a plurality of first connectors, and all distances between each of the first connectors and an axle of the first bearing hole are the same. The assembling body has a second bearing hole. The stator includes a passage and a plurality of second connectors, the second connectors are coupled to the first connectors respectively to have the stator assembled in the main body, and the passage and the first bearing hole are coaxial. The rotor is disposed inside the passage and two ends of the rotor are installed in the first bearing hole and the second bearing hole respectively. By having both the stator and the rotor positioned by the main body, a gap between the rotor and the stator can be maintained consistently.

Abstract: A method for controlling layer changes for an optical disk drive is provided, where a focus of a laserbeam emitted by a pickup head of the optical disk drive is moved from a current data layer of a disk to a target data layer of the disk. First, a position of a collimator lens of the pickup head is adjusted for spherical aberration correction. The objective lens is then lowered to a low position to move the focus of the laserbeam off the surface of the disk. The objective lens is then raised towards the disk. A focusing error signal is generated while the objective lens is being raised. Whether a target S-curve corresponding to the target data layer is present in the focusing error signal is then started to be detected. If the target S-curve is detected, the focus on operation on the target data layer of the disk is successful.

Abstract: A method and a system for voice communication, especially for a user who has voice or speaking problems, are disclosed. The method requires a communication sheet and a digital voice signal processing device. The communication sheet comprises a plurality of communication units and a plurality of function units for a user to click with the digital voice signal processing device. The plurality of function units comprise a whole sentence unit, and the method comprises a method for performing a function of emitting the sound of a whole sentence, which comprises the following steps: receiving sounds of words selected by the user; searching a voice file according to each of the sounds of words; receiving a command generated by the user's clicking the whole sentence unit; and playing voice files in order.

Abstract: The present invention discloses a method for fabricating an optical filter based on polymer asymmetric bragg couplers using holographic interference techniques, soft lithography, and micro molding, which comprises following steps: prepare a UV polymer with gratings; coating photo-resister film on the UV polymer, and exposed by UV light to obtain a photo-resister mold with two grooves each having gratings; coating diluted PDMS film on the photo-resister mold, and baking the PDMS film to obtain a PDMS mold having two waveguides with gratings; placing glass substrate over the PDMS mold to form a first tunnel; injecting a precure UV polymer into the first tunnel to from a cladding layer with two grooves having gratings pattern at its bottom; placing glass slide over the cladding layer and injecting a mixed UV polymer into the grooves to form waveguide cores; placing a second glass substrate over the cladding layer, and injecting UV polymer to form an upper cladding layer laminated with the cladding layer to obtai

Abstract: This invention provides a transition metal carbene complexes and the electroluminescent application thereof. Through employing different N?N heteroleptic ligand, the transition metal carbene complex can display wide-range color tuning ability from deep blue to red. The mentioned transition metal carbene complex can be applied in luminescent device, and the luminescent device can display wide-range color tuning ability with high luminescent efficiency while employing different N?N heteroleptic ligand in the transition metal carbene complex.

Abstract: The present disclosure relates to a mobile device provided with a camera module that is detachably received in a side of the device body. Particularly, the camera module is hidden inside the device body when not in use and can be drawn out from the side of the device body when in use. Since the camera module is not affixed permanently to the device, the detachable camera module can be used in small confined areas with expanded photo-capturing scope and angle.

Abstract: A multi-protection touch lock has a lock body and an unlocking panel connecting to the lock body. The lock body has a control mechanism, a locking unit connecting to the control mechanism, and at least one displaying unit connecting to the control unit, and at least one connection interface connecting to the displaying unit. The at least one unlocking panel has at least one transmission interface connecting to the at least one connection interface, and at least one operating unit connecting to the at least one transmission interface. The lock can be located at the predetermined position to control the door access, vehicle actuation and the use of electrical appliances. When unlocking, the unlocking panel comes to in contact with the lock and the correct password is input via the unlocking panel. After the unlocking action is completed, the unlocking panel is removed from the predetermined position.

Abstract: A high-voltage transistor device comprises a spiral resistive field plate over a first well region between a drain region and a source region of the high-voltage transistor device, wherein the spiral resistive field plate is separated from the first well region by a first isolation layer, and is coupled between the drain region and the source region. The high-voltage transistor device further comprises a plurality of first field plates over the spiral resistive field plate with each first field plate covering one or more segments of the spiral resistive field plate, wherein the plurality of first field plates are isolated from the spiral resistive field plate by a first dielectric layer, and wherein the plurality of first field plates are isolated from each other, and a starting first field plate is connected to the source region.

Abstract: A method for forming large substantially defect-free void areas on a semiconductor integrated circuit chip includes processing the chip through the passivation level processing operations then forming one or more openings in a designated blank area of the integrated circuit chip in a separate dedicated etching operation. The one or more openings may constitute 5-10% or more of the total area of the semiconductor chip. The void areas are deep trench openings that extend through the passivation layer and through all of the other material layers in the blank area exposing the substrate surface in one embodiment and through all material layers except for a field oxide layer formed directly on the substrate in another embodiment.