Abstract: A method for correcting a touch position and applied to an electronic apparatus is provided. The method includes: receiving a current touch event; obtaining prediction information of the current touch event based on correction information of a previous touch event which is received at a previous time point before the current touch event; obtaining correction information of the current touch event according to the prediction information and a measuring position of the current touch event; and updating a position of the current touch event at a display unit by using the correction information of the current touch event.

Abstract: A micro cooling fan includes a housing, a fan wheel, and a main circuit board. The main circuit board has a stator and a driving circuit. The stator is electrically connected to the driving circuit. The stator is disposed on a first inner surface, and the driving circuit is disposed on a first outer surface, so that the housing and the driving circuit of the micro fan motor form an integral structure. The first outer surface is opposite to the first inner surface, or the first outer surface is located on a side surface of the housing. Therefore, by disposing the driving circuit on the first outer surface, the wind resistance of the fan blades is reduced, and the air volume of the micro cooling fan is increased accordingly, so that the cooling effect of the micro cooling fan is improved.

Abstract: A conductive substrate comprises a substrate, a plurality of conductive patterns, and a plurality of optical compensation patterns. The conductive patterns extend along a first direction and are sequentially disposed on the substrate along a second direction. The optical compensation patterns are staggered from the conductive patterns along the second direction on the substrate. An edge of at least one of the conductive patterns extending along the first direction has a plurality of conductive protrusions, and an edge of at least one of the optical compensation patterns extending along the first direction has a plurality of optical compensation protrusions. A touch display device is also disclosed.

Abstract: A lateral-diffused metal oxide semiconductor device (LDMOS) includes a substrate, a first deep well, at least a field oxide layer, a gate, a second deep well, a first dopant region, a drain and a common source. The substrate has the first deep well which is of a first conductive type. The gate is disposed on the substrate and covers a portion of the field oxide layer. The second deep well having a second conductive type is disposed in the substrate and next to the first deep well. The first dopant region having a second conductive type is disposed in the second deep well. The doping concentration of the first dopant region is higher than the doping concentration of the second deep well.

Abstract: An optical toy is disclosed. The optical toy includes a frame, at least one emitting part, at least one receiving part, a plurality of light guiding parts, and at least one power source. The frame includes a container and at least one containing structure. The emitting part is movably located on the containing structure. The emitting part includes at least one light source for emitting light. The receiving part is movably located on the containing structure. The receiving part includes a light sensor for sensing the light. The plurality of light guiding parts is located in the container for changing the direction of the light. The relative positions of the plurality of light guiding parts can be changed. The power source is located in the frame for providing power to the optical toy.

Abstract: A micro cooling fan comprises a housing and a main circuit board. The housing has an accommodation space, a first inner surface, and a gap. The gap is in communication with the accommodation space, and two opposite side edges of the gap have a groove respectively. The main circuit board comprises a first circuit board and a second circuit board. The first circuit board has a stator, the second circuit board has a driving circuit, and the stator is electrically connected to the driving circuit. The first circuit board is disposed on the first inner surface, and the second circuit board is embedded into the grooves and blocks the gap.

Abstract: The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a second conductive type. The second doped region, which has a racetrack-shaped layout, is disposed in the first doped region, and has a long axis. The third doped region is disposed in the second doped region. The gate structure is disposed on the first doped region and the second doped region at a side of the third doped region. The contact metal is disposed on the first doped region at a side of the second doped region extending out along the long axis, and is in contact with the first doped region.

Abstract: An improved floating apparatus for scroll compressors is disclosed, which is a multi-function device integrating a temperature protection mechanism, a pressure protection mechanism and a backflow-proof mechanism and therefore substantially is a floating seal member with overheating protection, high pressure protection and backflow-proof capabilities. In detail, the present disclosure provides a floating apparatus for scroll compressors that not only can be manufactured easily, but also capable of distributing the acting force resulting from the gliding block for providing better sealing effect while preventing the scroll compressors from being damaged by high temperature and high pressure.

Abstract: A suspension for a HGA comprises a flexure having a suspension tongue arranged for supporting a slider, which comprising a stainless steel layer and a dielectric layer formed thereon. The dielectric layer has a top surface and bottom surface, a plurality of bonding pads are formed on the top surface at a leading portion of the suspension tongue and arranged for connecting with the slider, and at least two separate supporting pieces are formed on the bottom surface and located at a corresponding position with the bonding pads, thereby releasing stress generated on the bonding pads. The invention also discloses a HGA and a disk drive unit with the same. The invention can release the stress generated on the bonding pads of the suspension, reduce the temperature impact to the suspension, and in turn, reduce thermal crown change of the slider, thereby improving the reading and writing performance.

Abstract: A lateral-diffused metal oxide semiconductor device (LDMOS) includes a substrate, a first deep well, at least a field oxide layer, a gate, a second deep well, a first dopant region, a drain and a common source. The substrate has the first deep well which is of a first conductive type. The gate is disposed on the substrate and covers a portion of the field oxide layer. The second deep well having a second conductive type is disposed in the substrate and next to the first deep well. The first dopant region having a second conductive type is disposed in the second deep well. The doping concentration of the first dopant region is higher than the doping concentration of the second deep well.

Abstract: A controller used in a light emitting element driving circuit, wherein the light emitting element driving circuit has a power converter configured to provide an output current for the light emitting element. The controller has a dimming processing unit and a current control unit. The dimming processing unit is configured to receive a first dimming signal with a first duty cycle and a second dimming signal with a second duty cycle, and to generate a second dimming processing signal relative to the product of the first duty cycle and the second duty cycle. The current control unit is coupled between the dimming processing unit and the power converter, and is configured to generate a control signal for the power converter based on the second dimming processing signal and a feedback signal indicating the output current.

Abstract: A high voltage switching device and associated method of manufacturing, the high voltage switching device having a substrate, an epitaxial layer, a source region, a drain region, a drift region, a gate oxide, a filed oxide, a gate and a snake shaped poly.

Abstract: A multilayered miniature coil component, comprising a plurality of coil layers and insulating layers, the plurality of coil layers and insulating layers being alternately overlapped on each other. Each of the plurality of coil layers includes a plurality of coils and wires, each of the coils has a first and a second end, and a plurality of first conductive portions is disposed on each of the coil layers, at least one second conductive portion is disposed on at least one of the coil layers, and each of the plurality of insulating layers has a plurality of conductive through holes disposed correspondingly to the first conductive portions and the second conductive portions, thus through the plurality of wires, the first and the second conductive portions and the conductive through holes, the plurality of coils in each of the coil layers are composed as a circuit loop.

Abstract: The apparatus and method for measuring displacement according to the present invention includes a first beam and a second beam. A first reflection structure reflects a first beam to the surface of an object under test; and a second reflection structure reflects a second beam to the surface of the object under test. The reflected first beam and the reflected second beam have an optical path difference. The object under test scatters a scattering beam of gathering the first and second beams. The scattering beam has an interference signal. A photodetector receives the interference signal of the scattering beam. Then an operational unit receives and computes the interference signal for producing a displacement value. By using the first and second reflection structures, the first and second beams split from an incident beam produce an optical path difference. Thereby, the structure of the apparatus for measuring displacement can be simplified.

Abstract: A high voltage semiconductor device is provided. A first-polarity buried layer is formed in the substrate. A first high voltage second-polarity well region is located over the first-polarity buried layer. A second-polarity base region is disposed within the first high voltage second-polarity well region. A source region is disposed within the second-polarity base region. A high voltage deep first-polarity well region is located over the first-polarity buried layer and closely around the first high voltage second-polarity well region. A first-polarity drift region is disposed within the high voltage deep first-polarity well region. A gate structure is disposed over the substrate. A second high voltage second-polarity well region is located over the first-polarity buried layer and closely around the high voltage deep first-polarity well region. A deep first-polarity well region is located over the first-polarity buried layer and closely around the second high voltage second-polarity well region.

Abstract: The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a second conductive type. The second doped region, which has a racetrack-shaped layout, is disposed in the first doped region, and has a long axis. The third doped region is disposed in the second doped region. The gate structure is disposed on the first doped region and the second doped region at a side of the third doped region. The contact metal is disposed on the first doped region at a side of the second doped region extending out along the long axis, and is in contact with the first doped region.

Abstract: A lateral-diffusion metal-oxide-semiconductor device includes a semiconductor substrate having at least a field oxide layer, a gate having a layout pattern of a racetrack shape formed on the substrate, a common source formed in the semiconductor substrate and enclosed by the gate, and a drain surrounding the gate and formed in the semiconductor substrate. The gate covers a portion of the field oxide layer. The common source includes a first doped region having a first conductive type and a plurality of islanding second doped regions having a second conductive type. The drain includes a third doped region having the first conductive type. The third doped region overlaps a portion of the field oxide layer and having an overlapping area between the third doped region and the field oxide layer.

Abstract: A high voltage semiconductor device is provided. A first-polarity buried layer is formed in the substrate. A first high voltage second-polarity well region is located over the first-polarity buried layer. A second-polarity base region is disposed within the first high voltage second-polarity well region. A source region is disposed within the second-polarity base region. A high voltage deep first-polarity well region is located over the first-polarity buried layer and closely around the first high voltage second-polarity well region. A first-polarity drift region is disposed within the high voltage deep first-polarity well region. A gate structure is disposed over the substrate. A second high voltage second-polarity well region is located over the first-polarity buried layer and closely around the high voltage deep first-polarity well region. A deep first-polarity well region is located over the first-polarity buried layer and closely around the second high voltage second-polarity well region.

Abstract: A motor device includes a main body, an assembling body, a stator and a rotor. The main body includes a first bearing hole and a plurality of first connectors, and all distances between each of the first connectors and an axle of the first bearing hole are the same. The assembling body has a second bearing hole. The stator includes a passage and a plurality of second connectors, the second connectors are coupled to the first connectors respectively to have the stator assembled in the main body, and the passage and the first bearing hole are coaxial. The rotor is disposed inside the passage and two ends of the rotor are installed in the first bearing hole and the second bearing hole respectively. By having both the stator and the rotor positioned by the main body, a gap between the rotor and the stator can be maintained consistently.

Abstract: A multilayered miniature coil component, comprising a plurality of coil layers and insulating layers, the plurality of coil layers and insulating layers being alternately overlapped on each other.