Abstract: A power supply system with power factor correction, includes: an AC rectifier, a power factor correction (PFC) conversion circuit, an asymmetric half-bridge (AHB) flyback converter and a communication protocol power delivery (PD) interface. When a power level of an adapter output power is lower than a power threshold, and a converted voltage of a converted power is higher than a first voltage threshold, the communication protocol PD interface generates a disable signal to disable a PFC conversion of the PFC conversion circuit, when the PFC conversion is disabled, the PFC conversion circuit operates a bypass coupling operation, as thus, the converted voltage is equal to a rectified voltage of a rectified power.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. During a DCM (discontinuous conduction mode) operation, the second driving signal includes a resonant pulse for demagnetizing the transformer and a ZVS (zero voltage switching) pulse for achieving ZVS of the first transistor. The resonant pulse is skipped when the output voltage is lower than a low-voltage threshold.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. The second driving signal includes a resonant pulse having a resonant pulse width and a ZVS pulse during the DCM operation. The resonant pulse is configured to demagnetize the transformer. The resonant pulse has a first minimum resonant period for a first level of the output load and a second minimum resonant period for a second level of the output load. The first level is higher than the second level and the second minimum resonant period is shorter than the first minimum resonant period.

Abstract: A resonant asymmetrical half-bridge flyback power converter includes: a first transistor and a second transistor switching a transformer coupled to a capacitor for generating an output power; a voltage divider coupled to an auxiliary winding of the transformer; a differential sensing circuit which includes a first terminal and a second terminal coupled to the voltage divider to sense an auxiliary signal generated by the auxiliary winding for generating a peak signal and a demagnetization-time signal; and a PWM control circuit configured to generate a first PWM signal and a second PWM signal in accordance with the peak signal and the demagnetization-time signal, for controlling the first transistor and the second transistor respectively; wherein a period of an enabling state of the demagnetization-time signal is correlated to the output power level; wherein the peak signal is related to a quasi-resonance of the transformer after the transformer is demagnetized.

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Abstract: A circuit of a resonant power converter comprising: a high-side switch and a low-side switch, coupled to form a half-bridge switching circuit which is configured to switch a transformer for generating an output voltage; a high-side drive circuit, generating a high-side drive signal coupled to drive the high-side switch in response to a high-side control signal; a bias voltage, coupled to a bootstrap diode and a bootstrap capacitor providing a power source from the bootstrap capacitor for the high-side drive circuit; wherein the high-side drive circuit generates the high-side drive signal with a fast slew rate to turn on the high-side switch when the high-side switch is to be turned on with soft-switching; the high-side drive circuit generates the high-side drive signal with a slow slew rate to turn on the high-side switch when the high-side switch is to be turned on without soft-switching.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a material layer over a semiconductor substrate; forming a plurality of spacer masks over the material layer; patterning the material layer into a plurality of masks below the spacer masks, wherein patterning the material layer comprises an atomic layer etching (ALE) process; and etching the semiconductor substrate through the masks.

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Abstract: A resonant asymmetrical half-bridge flyback power converter includes: a first transistor and a second transistor switching a transformer coupled to a capacitor for generating an output power; a voltage divider coupled to an auxiliary winding of the transformer; a differential sensing circuit which includes a first terminal and a second terminal coupled to the voltage divider to sense an auxiliary signal generated by the auxiliary winding for generating a peak signal and a demagnetization-time signal; and a PWM control circuit configured to generate a first PWM signal and a second PWM signal in accordance with the peak signal and the demagnetization-time signal, for controlling the first transistor and the second transistor respectively; wherein a period of an enabling state of the demagnetization-time signal is correlated to the output power level; wherein the peak signal is related to a quasi-resonance of the transformer after the transformer is demagnetized.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.

Abstract: A switching control circuit for use in controlling a resonant flyback power converter generates a first driving signal and a second driving signal. The first driving signal is configured to turn on the first transistor to generate a first current to magnetize a transformer and charge a resonant capacitor. The transformer and charge a resonant capacitor are connected in series. The second driving signal is configured to turn on the second transistor to generate a second current to discharge the resonant capacitor. During a power-on period of the resonant flyback power converter, the second driving signal includes a plurality of short-pulses configured to turn on the second transistor for discharging the resonant capacitor. A pulse-width of the short-pulses of the second driving signal is short to an extent that the second current does not exceed a current limit threshold.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. During a DCM (discontinuous conduction mode) operation, the second driving signal includes a resonant pulse for demagnetizing the transformer and a ZVS (zero voltage switching) pulse for achieving ZVS of the first transistor. The resonant pulse is skipped when the output voltage is lower than a low-voltage threshold.

Abstract: A resonant flyback power converter includes: a first transistor and a second transistor which are configured to switch a transformer and a resonant capacitor for generating an output voltage; and a switching control circuit generating first and second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal magnetizes the transformer. The second driving signal includes a resonant pulse having a resonant pulse width and a ZVS pulse during the DCM operation. The resonant pulse is configured to demagnetize the transformer. The resonant pulse has a first minimum resonant period for a first level of the output load and a second minimum resonant period for a second level of the output load. The first level is higher than the second level and the second minimum resonant period is shorter than the first minimum resonant period.

Abstract: A resonant flyback power converter includes: a first and a second transistors which form a half-bridge circuit for switching a transformer and a resonant capacitor to generate an output voltage; a current-sense device for sensing a switching current of the half-bridge circuit to generate a current-sense signal; and a switching control circuit generating a first and a second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal controls the half-bridge circuit to generate a positive current to magnetize the transformer and charge the resonant capacitor. The turn-on of the second driving signal controls the half-bridge circuit to generate a negative current to discharge the resonant capacitor. The switching control circuit turns off the first transistor when the positive current exceeds a positive-over-current threshold, and/or, turns off the second transistor when the negative current exceeds a negative-over-current threshold.

Abstract: A boost power factor correction circuit includes: a switch and an inductor coupled to each other; a current sensing device generating a current sensing signal according to a current flowing through the switch; a temperature sensing device coupled to the inductor to generate a temperature sensing signal; and a conversion control circuit operating the switch. The conversion control circuit is an integrated circuit and includes: a shared pin coupled to the temperature sensing device and the current sensing device; and a current sensing circuit and a temperature sensing circuit which sense a multipurpose sensing signal through the shared pin. The multipurpose sensing signal is related to the current sensing signal when the switch is ON and related to the temperature sensing signal when the switch is OFF. The temperature sensing signal is related to an input voltage, an output voltage and an electrical parameter of the temperature sensing device.

Abstract: Multiple-patterning techniques described herein enable forming fin structures of a semiconductor device in a manner that enables decreased fin-to-fin spacing of the fin structures while providing precise control over etching depth of the fin structures. In some implementations, an etch operation is performed to form a pattern in one or more mask layers that is used to etch a substrate to form the fin structures. The etch operation includes an advanced pulsing technique, in which a high-frequency radio frequency (RF) source and a low-frequency RF source are pulsed. Pulsing the high-frequency RF source and the low-frequency RF source in the etch operation reduces consumption of a thickness of the one or more mask layers which increases the aspect ratio of the pattern. This enables deeper etching of the substrate when forming the fin structures, which reduces the likelihood of under etching.

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a material layer over a semiconductor substrate; forming a plurality of spacer masks over the material layer; patterning the material layer into a plurality of masks below the spacer masks, wherein patterning the material layer comprises an atomic layer etching (ALE) process; and etching the semiconductor substrate through the masks.

Abstract: A flyback power converter circuit includes a transformer, a blocking switch, a primary side switch, a primary side controller circuit and a secondary side controller circuit. The transformer is coupled between an input voltage and an internal output voltage in an isolated manner. The blocking switch controls the electric connection between the internal output voltage and an external output voltage. In a standby mode, the internal output voltage is regulated to a standby voltage, and the blocking switch is controlled to be OFF; in an operation mode, the internal output voltage is regulated to an operating voltage, and the blocking switch is controlled to be ON, such that the external output voltage has the operating voltage. The standby voltage is smaller than the operating voltage, so that the power consumption of the flyback power converter circuit is reduced in the standby mode.

Abstract: A method includes providing a substrate having a first semiconductor material; creating a mask that covers an nFET region of the substrate; etching a pFET region of the substrate to form a trench; epitaxially growing a second semiconductor material in the trench, wherein the second semiconductor material is different from the first semiconductor material; and patterning the nFET region and the pFET region to produce a first fin in the nFET region and a second fin in the pFET region, wherein the first fin includes the first semiconductor material and the second fin includes a top portion over a bottom portion, wherein the top portion includes the second semiconductor material, and the bottom portion includes the first semiconductor material.