Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: A ZVS (zero voltage switching) control circuit for controlling a flyback power converter includes: a primary side controller circuit for generating a switching signal, to control a primary side switch; and a secondary side controller circuit for generating a synchronous rectifier (SR) control signal for controlling a synchronous rectifier switch. The SR control signal includes an SR-control pulse and a ZVS pulse. The SR-control pulse controls the synchronous rectifier switch to perform secondary side synchronous rectification. The secondary side controller circuit determines a trigger timing point of the ZVS pulse according to a waveform characteristic of a ringing signal, to control the synchronous rectifier switch to be ON for a predetermined period, thereby achieving zero voltage switching of the primary side switch. The primary side or the secondary side controller circuit includes a jitter controller for performing jitter control on the ZVS pulse.

Abstract: A monitoring system applied to a shaping machine having a high speed electricity meter. The monitoring system includes a current obtaining device and an analyzing device. The current obtaining device is coupled to the high speed electricity meter to obtain a plurality of current signals from the operated shaping machine and in respond to the shaping machine executes a machining program, the current obtaining device extracts current variation data from the current signals. The machining program corresponds to a piece of the current variation data. The piece of the current variation datum comprises a maximum current and an occurring time that the maximum current being recorded. The analyzing device is configured to calculate a gap, based on the maximum currents and the occurring times corresponding to at least two successive machining programs. In respond to the gap time exceeding a predetermined threshold, the analyzing device generates a warning signal.

Abstract: A ZVS (zero voltage switching) control circuit for controlling a flyback power converter includes: a primary side controller circuit for generating a switching signal, to control a primary side switch; and a secondary side controller circuit for generating a synchronous rectifier (SR) control signal for controlling a synchronous rectifier switch. The SR control signal includes an SR-control pulse and a ZVS pulse. The SR-control pulse controls the synchronous rectifier switch to perform secondary side synchronous rectification. The secondary side controller circuit determines a trigger timing point of the ZVS pulse according to a waveform characteristic of a ringing signal, to control the synchronous rectifier switch to be ON for a predetermined period, thereby achieving zero voltage switching of the primary side switch. The primary side or the secondary side controller circuit includes a jitter controller for performing jitter control on the ZVS pulse.

Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

Abstract: A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

Abstract: A flyback power converter includes a transformer having a primary winding for receiving an input power, a secondary winding for generating an output power, and an auxiliary winding for generating a supply voltage, a primary side switch coupled to the primary winding, a high voltage start-up switch coupled to the input voltage and the controller supply voltage, and a primary side controller powered by the controller supply voltage. The primary side controller includes a multi-function pin coupled to a control terminal of the high voltage start-up switch, a high voltage start-up circuit for controlling the high voltage start-up switch to be ON through the multi-function pin when the controller supply voltage is lower than a threshold, and a protection control circuit which is coupled to an protection sensing signal through the multi-function pin; the protection control circuit operates the flyback power converter according to the protection sensing signal.

Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: An evaluation system applied on shaping machine, in which the shaping machine has a controller and an electricity meter. The evaluation system includes a parameter obtaining device and an evaluation device. The parameter obtaining device communicatively coupled to the controller and the electricity meter. The parameter obtaining device is configured to obtain a plurality of parameter data regarding a machining program from the controller and the electricity meter. The evaluation device is electrically coupled to the parameter obtaining device, the evaluation device configured to transform the parameter data into numerical parameters to extract a bolster plate position value and a motor current value, multiply the bolster plate position value and the motor current value with weights and sum up the weighted bolster plate position value and the weighted motor current value as an evaluation score.

Abstract: A data collecting system includes a management server, a number of data collecting chains. Each data collecting chain includes a computer connected to the management server, at least one sensor and a data acquisition (DAQ), coupled to the sensor(s) and connected to the computer through RS485, configured to acquire sensing data from the sensor(s) and transmit the sensing data to the computer. The DAQs are connected to the computers through a wireless backup transmission interface. The management server sends a first confirmation signal to the computers. When at least one of the computers does not respond to the first confirmation signal, the management server indicates the computers which have responded to the first confirmation signal to receive the sensing data from the DAQ(s) corresponding to the computer(s) which doesn't respond to the first confirmation signal through the wireless backup transmission interface.

Abstract: A monitoring system applied to a shaping machine having a high speed electricity meter. The monitoring system includes a current obtaining device and an analyzing device. The current obtaining device is coupled to the high speed electricity meter to obtain a plurality of current signals from the operated shaping machine and in respond to the shaping machine executes a machining program, the current obtaining device extracts current variation data from the current signals. The machining program corresponds to a piece of the current variation data. The piece of the current variation datum comprises a maximum current and an occurring time that the maximum current being recorded. The analyzing device is configured to calculate a gap, based on the maximum currents and the occurring times corresponding to at least two successive machining programs. In respond to the gap time exceeding a predetermined threshold, the analyzing device generates a warning signal.

Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

Abstract: A flyback power converter includes a transformer having a primary winding receiving an input power, a secondary winding generating an output power, and an auxiliary winding generating an auxiliary voltage and providing a supply voltage, a primary side switch controlling the primary winding, a start-up switch coupled to the input voltage and the supply voltage, and a primary side controller supplied by the supply voltage. The primary side controller includes a shared pin coupled to a control terminal of the start-up switch, a start-up circuit for controlling the start-up switch to be conductive through the shared pin when the supply voltage is lower than a threshold, and a signal processing circuit receiving an auxiliary signal related to the auxiliary voltage through the shared pin and operating the flyback power converter accordingly, wherein the shared pin, besides providing a function of controlling the start-up switch, provides another function.

Abstract: A flyback power converter includes a transformer having an auxiliary winding for generating an auxiliary voltage and providing a supply voltage on a supply node; a primary side controller circuit which is powered by the supply voltage from the supply node; and a high voltage (HV) start-up circuit. The HV start-up circuit is coupled to an high voltage signal through a HV input terminal and generates the supply voltage through a supply output terminal, wherein when the supply voltage does not exceed a start-up voltage threshold, a HV start-up switch conducts the HV input terminal and the supply output terminal to provide the supply voltage, and when the supply voltage exceeds a start-up voltage threshold, the HV start-up switch is OFF. The HV start-up circuit and the primary side controller circuit are packaged in two separate integrated circuit packages respectively.

Abstract: Semiconductor devices, FinFET devices with optimized strained-source-drain recess profiles and methods of forming the same are provided. One of the semiconductor devices includes a substrate, a gate stack over the substrate and a strained layer in a recess of the substrate and aside the gate stack. Besides, a ratio of a depth at the greatest width of the recess to a width of the gate stack ranges from about 0.5 to 0.7.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The first trench has an inner wall and a bottom surface. The image sensor device includes an insulating layer covering the back surface, the inner wall, and the bottom surface. A thickness of a first upper portion of the insulating layer in the first trench increases in a direction away from the front surface, and the insulating layer has a second trench partially in the first trench. The image sensor device includes a reflective structure filled in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: A flyback power converter includes a transformer having an auxiliary winding for generating an auxiliary voltage and providing a supply voltage on a supply node; a primary side controller circuit which is powered by the supply voltage from the supply node; and a high voltage (HV) start-up circuit. The HV start-up circuit is coupled to an high voltage signal through a HV input terminal and generates the supply voltage through a supply output terminal, wherein when the supply voltage does not exceed a start-up voltage threshold, a HV start-up switch conducts the HV input terminal and the supply output terminal to provide the supply voltage, and when the supply voltage exceeds a start-up voltage threshold, the HV start-up switch is OFF. The HV start-up circuit and the primary side controller circuit are packaged in two separate integrated circuit packages respectively.

Abstract: A flyback power converter circuit includes: a transformer including a primary side winding coupled to an input power and a secondary side winding coupled to an output node, wherein the input power includes an input voltage; a primary side switch coupled to the primary side winding for controlling the input power to generate an output power on the output node through the secondary side winding, wherein the output power includes an output voltage; a clamping circuit including an auxiliary switch and an auxiliary capacitor connected in series to form an auxiliary branch which is connected with the primary side winding in parallel; and a conversion control circuit for adjusting an ON time of the auxiliary switch according to at least one of a current related signal, the input voltage, and the output voltage, such that the primary side switch is zero voltage switching when turning ON.