Abstract: A method for dicing a semiconductor wafer includes the steps of: forming grooves in an integrated circuit layer of the semiconductor wafer; forming a photoresist layer on the integrated circuit layer; forming V-shaped first notches, each of which is further indented from the integrated circuit layer; thinning the substrate; attaching a blue tape to the integrated circuit layer; forming V-shaped second notches, each of which is indented from the thinned substrate and each of which is registered with a respective one of the first notches such that the first and second notches cooperatively define imaginary breaking lines, respectively; and pressing the blue tape at positions that are aligned with the imaginary breaking lines, respectively.

Abstract: General information blocks of text are extracted from a document. A label is applied to each general information block and detailed information strings of text are extracted from at least one of the general information blocks based on the corresponding label of the at least one general information block.

Abstract: A method for making a semiconductor light emitting device comprises the steps of: (a) forming a plurality of buttresses on a first supporting substrate such that the buttresses are separated by a plurality of intercommunicated spaces thereamong; (b) forming a base layer on top end portions of the buttresses in such a manner that the top end portions of the buttresses are enclosed in the base layer; (c) forming a multi-layered light-emitting structure on the base layer; (d) attaching a second supporting substrate to the light-emitting structure; and (e) separating the first supporting substrate from the light-emitting structure by destroying the buttresses.

Abstract: The invention describes a method to facilitate the use of low-sensitivity monitoring equipment for detecting and monitoring defects on the surface of semiconductor wafers. The method includes the use of a hydrofluoric acid solution for increasing the dimensions of a defect and the application of a thin-film layer of a metal, such as titanium, for improving the appearance of the defect such that the defect dimensions increase to above 0.1 nanometer, the detection threshold for economical low-sensitivity monitoring equipment.

Abstract: A structure and method for a data processing product with anion function, in which the structure provides a anions apparatus comprising of an apparatus housing for assembling various storage media of the data processing product. There are air-exhaust portions and air-entrance portions arranged in the front side and the rear side of the apparatus housing. The air-entrance portions have an air actuator and the power supply for the data processing product is electrically connected with the anions apparatus for supplying power. A method for data processing product with anion function for applying an anions module to a data processing product comprises designing an assembly place in a convective scope between the air actuator and the air holes, assembling the anions module in the assembly place, and connecting power supply for the data processing product with the anions module.

Abstract: A slot apparatus for a memory module on a printed circuit board. The slot apparatus includes a first memory slot set, a second memory slot set, a terminal resistor, and a serial resistance. The first and second memory slot sets are disposed on the printed circuit board. The terminal resistor is disposed between the first and second memory slot sets. The serial resistance is disposed on the printed circuit board and is electrically connected to the first and second memory slot sets through the printed circuit board. The terminal resistor is respectively and electrically connected to the first and second memory slot sets through the printed circuit board. The terminal resistor and the first and second memory slot sets are connected to a terminator voltage.

Abstract: An optically compensated birefringence liquid crystal alignment agent. The liquid crystal alignment agent includes one or more polymerizable monomers polymerized to form a polymer having liquid crystal alignment memory on an alignment layer by irradiating an energy ray. Liquid crystals are rapidly converted from splay state to bend state along the polymer memory direction so that a liquid crystal display reaches steady state immediately by only applying normal voltage, without application of high voltage. The invention also provides a liquid crystal display including the liquid crystal alignment agent and a method for fabricating the liquid crystal display.

Abstract: A vacuum laser constant temperature device is adopted for a housing that has a heat dissipation module arranged therein. The device has a metallic partition adjacent to the heat dissipation module to enclose a airtight vacancy formed with the housing, a thermoelectric cooling chip with a heating portion connecting to a side of the metallic partition and a cooling portion, a semiconductor laser lighting module arranged in the airtight vacancy and connecting to the cooling portion of the thermoelectric cooling chip, and a heat insulation layer arranged both on an opposite side of the metallic partition and in the airtight vacancy. Heat generated by the semiconductor laser lighting module can be transferred to the heat dissipation module via the thermoelectric cooling chip and the metallic partition. The thermoelectric cooling chip makes an output power of the semiconductor laser lighting module keep constant within various environments without the condensation thereon.

Abstract: A method for making a semiconductor light emitting device comprises the steps of: (a) forming a plurality of buttresses on a first supporting substrate such that the buttresses are separated by a plurality of intercommunicated spaces thereamong; (b) forming a base layer on top end portions of the buttresses in such a manner that the top end portions of the buttresses are enclosed in the base layer; (c) forming a multi-layered light-emitting structure on the base layer; (d) attaching a second supporting substrate to the light-emitting structure; and (e) separating the first supporting substrate from the light-emitting structure by destroying the buttresses.

Abstract: The invention describes a method to facilitate the use of low-sensitivity monitoring equipment for detecting and monitoring defects on the surface of semiconductor wafers. The method includes the use of a hydrofluoric acid solution for increasing the dimensions of a defect and the application of a thin-film layer of a metal, such as titanium, for improving the appearance of the defect such that the defect dimensions increase to above 0.1 nanometer, the detection threshold for economical low-sensitivity monitoring equipment.

Abstract: A heat dissipation module is used for a high-power semiconductor laser device with an operation current below 2 amperes and has a housing, a plurality of air holes in side panels of the housing, an air outlet on a rear panel of the housing, and a heat dissipation module in the housing. The heat dissipation module has a heat-dissipating plate and a base placed beside the heat-dissipating plate. The base has a plurality of holes corresponding to a current controller, the current controller is arranged on one face of the heat-dissipating plate and near the air outlet, and the current controller has pins connected to holes on the base through insulating unit and wire. Therefore, the high-power semiconductor laser device can be operated at a stable temperature.

Abstract: A money checking apparatus has a U-shaped with having a cavity with a receiving space for receiving an object to be tested, an LCD monitor arranged atop the cavity for viewing a status of the object, and a first switch and a second switch being placed beside the receiving space and operated to turn on/off at least one infrared lamp and ultraviolet lamp. A CMOS sensor is arranged on an inner face beside the cavity and connected to the second switch and the LCD monitor, the CMOS sensor fetching the image reflected from the optical object and displaying the image on the LCD monitor. A processor is arranged in the base and connected to a power supply, the receiver, the first switch and the second switch. The money checking apparatus can be used to examine US dollars, euro bills, Chinese RMB bills and credit cards.

Abstract: A high power semiconductor laser lighting device has a housing, a fan module arranged in an exhaust hole in the housing, a base connected to the bottom wall of the housing and disposed on a side of the fan module, and a semiconductor laser constant-temperature module. The base has a driving unit with at least one high power electronic component connected to fins of the fan module. The semiconductor laser constant-temperature module has a metallic partition to enclose a vacuum formed in a front portion of the housing, and a heat insulation layer arranged in the vacuum. The metallic partition has a side connecting the heat dissipation plate and an opposite side connecting a heating portion of a thermoelectric cooling chip, which includes a cooling portion connecting to a semiconductor laser lighting module. The high power semiconductor laser lighting device to keep an output power thereof constant within various environments.

Abstract: A heat dissipation module is used for a high-power semiconductor laser device with an operation current below 8 amperes. The heat dissipation module has a housing, a plurality of air holes on in panels of the housing, an air outlet in a rear panel of the housing, a heat dissipation module in the housing, the heat dissipation module having a heat-dissipating plate and a base placed beside the heat-dissipating plate, the base having a plurality of holes corresponding to at least one high-power element, the high-power element being arranged on one face of the heat-dissipating plate and near the air outlet, and the high-power element having pins connected to holes on the base through insulating unit and wire. Therefore, the high-power semiconductor laser device can be operated at a stable temperature.

Abstract: A vacuum laser constant temperature device is adopted for a housing that has a heat dissipation module arranged therein. The device has a metallic partition adjacent to the heat dissipation module to enclose a airtight vacancy formed with the housing, a thermoelectric cooling chip with a heating portion connecting to a side of the metallic partition and a cooling portion, a semiconductor laser lighting module arranged in the airtight vacancy and connecting to the cooling portion of the thermoelectric cooling chip, and a heat insulation layer arranged both on an opposite side of the metallic partition and in the airtight vacancy. Heat generated by the semiconductor laser lighting module can be transferred to the heat dissipation module via the thermoelectric cooling chip and the metallic partition. The thermoelectric cooling chip makes an output power of the semiconductor laser lighting module keep constant within various environments without the condensation thereon.

Abstract: A heat dissipation module is used for high-power semiconductor laser device with operation current below 3.5 amperes and has a housing with a plurality of air holes in side panels of the housing, an air outlet on a rear panel of the housing and a heat dissipation module in the housing. The heat dissipation module has a heat-dissipating plate and a base placed beside the heat-dissipating plate, the base has a plurality of holes corresponding to at least one current controller, the current controller is arranged on one face of the heat-dissipating plate and near the air outlet, and the current controller has pins connected to holes on the base through insulating unit and wire. Therefore, the high-power semiconductor laser device can be operated at a stable temperature.

Abstract: A method for predicting a source of semiconductor part deviation is disclosed. The method includes the steps of selecting at least one chart including part parameters and associating with each of the part parameters at least one fabrication process, which are stored in recipes, scanning the selected charts for deviations in the part parameters, wherein the deviations are determined by monitoring a trend of recent values of the part parameters, indicating the charts containing the part parameters wherein the part parameter values are determined as being outside of at least one trend tolerance value associated with the parameter, identifying, in each of the indicated charts at least one process associated with each of the part parameter deviations outside the at least one tread tolerance value, and determining a source of the parameter deviation by correlating each of the identified at least one processes.

Abstract: A slot apparatus for a memory module on a printed circuit board. The slot apparatus includes a first memory slot set, a second memory slot set, a terminal resistor, and a serial resistance. The first and second memory slot sets are disposed on the printed circuit board. The terminal resistor is disposed between the first and second memory slot sets. The serial resistance is disposed on the printed circuit board and is electrically connected to the first and second memory slot sets through the printed circuit board. The terminal resistor is respectively and electrically connected to the first and second memory slot sets through the printed circuit board. The terminal resistor and the first and second memory slot sets are connected to a terminator voltage.

Abstract: The present invention provides a method of producing an added defect count for monitoring the property of chambers or wafers. First, a proper pre-process sensitivity is determined with map to map process by maximizing the summation of a mapping rate and a catching rate. Second, a wafer is scanned with the proper pre-process sensitivity and a pre-process particle number P1 is recorded. Third, a manufacturing step is processed on the wafer. Fourth, the wafer is scanned with the most sensitive scale of the post-process sensitivities and a post-process particle number P2 is recorded. Finally, the post-process particle number P2 is subtracted from the pre-process particle number P1.

Abstract: The present invention provides a method of producing an added defect count for monitoring the property of chambers or wafers. First, a proper pre-process sensitivity is determined with map to map process by maximizing the summation of a mapping rate and a catching rate. Second, a wafer is scanned with the proper pre-process sensitivity and a pre-process particle number P1 is recorded. Third, a manufacturing step is processed on the wafer. Fourth, the wafer is scanned with the most sensitive scale of the post-process sensitivities and a post-process particle number P2 is recorded. Finally, the post-process particle number P2 is subtracted from the pre-process particle number P1.