Patents by Inventor Kuo-An Liang
Kuo-An Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11381899Abstract: A headphone control system for use within a headphone includes a temperature sensor for detecting whether the circumference temperature of the headphone is relatively far from the human temperature implying the headphone is no longer worn by the user, and a gravity sensor for detecting whether the headphone is stationary implying that the headphone is not used for enabling a power saving mode, or is moving implying that the headphone is not yet unused for maintaining operation. The detection constantly is applied to the headphone disregarding whether the headphone is in an operation mode or a power saving mode so as to efficiently have the headphone operated in response to currently using or power-saved in response to non-using.Type: GrantFiled: May 14, 2020Date of Patent: July 5, 2022Assignees: FOXCONN (KUNSHAN) COMPUTER CONNECTOR CO., LTD., FOXCONN INTERCONNECT TECHNOLOGY LIMITEDInventors: Wen-Kuei Chou, Hui-Cheng Chen, Hsu-Kuo Liang
-
Publication number: 20220181467Abstract: A semiconductor structure includes an interfacial layer disposed over a semiconductor layer, a high-k gate dielectric layer disposed over the interfacial layer, where the high-k gate dielectric layer includes a first metal, a metal oxide layer disposed between the high-k gate dielectric layer and the interfacial layer, where the metal oxide layer is configured to form a dipole moment with the interfacial layer, and a metal gate stack disposed over the high-k gate dielectric layer. The metal oxide layer includes a second metal different from the first metal, and a concentration of the second metal decreases from a top surface of the high-k gate dielectric layer to the interface between the high-k gate dielectric layer and the interfacial layer.Type: ApplicationFiled: February 21, 2022Publication date: June 9, 2022Inventors: Hsueh Wen Tsau, Ziwei Fang, Huang-Lin Chao, Kuo-Liang Sung
-
Publication number: 20220172625Abstract: An approach is provided for dynamically identifying a danger zone for a predicted traffic accident and generating a warning about the accident. From a monitoring device at a first location, information about traffic conditions for vehicles at time T0 and at least one subsequent time T0+t is received. Based on speeds of the vehicles and a fixed distance from the first location, a response time is calculated. Within the response time, a dual artificial intelligence (AI) model using shallow and deep learners applied on historical accident data is employed. Based on the dual AI model and the traffic conditions, an accident involving vehicle(s) in the traffic is predicted to occur in a zone. A warning about the accident is generated and sent to device(s) in the vehicle(s). The warning is presented to driver(s) of the vehicle(s).Type: ApplicationFiled: December 2, 2020Publication date: June 2, 2022Inventors: Kuo-Liang Chou, Min Luo, Der-Joung Wang, Xiang Yu Yang, Ci-Wei Lan
-
Patent number: 11335964Abstract: A cold plate for a battery module comprising a plurality of cells that produces heat as charging and discharging is disclosed. The cold plate includes a plurality of first fins distributed in a first subarea of the cold plate; and a plurality of second fins distributed in a second subarea of the cold plate; wherein a second fin coverage of the plurality of second fins distributed in the second subarea is smaller than a first fin coverage of the plurality of first fins distributed in the first subarea when an amount of heat absorption of the second subarea from the plurality of cells is greater than an amount of heat absorption of the first subarea from the plurality of cells.Type: GrantFiled: December 4, 2019Date of Patent: May 17, 2022Assignee: National Chung-Shan Institute of Science and TechnologyInventors: Fu-Min Fang, Kuo-Kuang Jen, Gwo-Huei You, Kuo-An Liang
-
Publication number: 20220140236Abstract: A resistive memory device includes a first electrode, a second electrode, a first metal oxide layer, a second metal oxide layer, and a multilayer insulator structure. The first metal oxide layer is disposed between the first electrode and the second electrode in a vertical direction. The second metal oxide layer is disposed between the first metal oxide layer and the second electrode in the vertical direction. The multilayer insulator structure is disposed between the first metal oxide layer and the second metal oxide layer in the vertical direction. The first metal oxide layer includes first metal atoms, the second metal oxide layer includes second metal atoms, and the multilayer insulator structure includes third metal atoms. Each of the third metal atoms is identical to each of the second metal atoms, and an atomic percent of the third metal atoms in the multilayer insulator structure gradually changes in the vertical direction.Type: ApplicationFiled: January 17, 2022Publication date: May 5, 2022Applicant: United Semiconductor (Xiamen) Co., Ltd.Inventors: Yuheng Liu, Yunfei Fu, Chih-Chien Huang, KUO LIANG HUANG, WEN YI TAN
-
Publication number: 20220131406Abstract: An Uninterruptible Power Supply (UPS) including a charger configured to convert input AC power into DC power having a first voltage level, a DC-DC converter configured to convert the DC power having the first voltage level into DC power having a DC bus voltage level, a DC bus coupled to the DC-DC converter, an inverter coupled to the output via an output switch and configured to convert the DC power having the DC bus voltage level into output AC power, a bypass line including a bypass switch coupled between the input and the output switch, a rectifier coupled between the bypass line and the DC bus, and a controller configured to operate the UPS in a first mode of operation to provide DC power to the DC bus via the DC-DC converter and in a second mode of operation to provide DC power to the DC bus via the rectifier.Type: ApplicationFiled: September 27, 2021Publication date: April 28, 2022Inventors: Andraw Chih-Feng Ho, Kuo-Liang Lee
-
Publication number: 20220116796Abstract: A wireless communication system for performing communication and computing includes a plurality of cells configured to perform the communication between at least one user equipment and at least one network; and an Artificial Intelligence (AI) computing platform comprising a plurality of AI slices to perform the computing, wherein the plurality of cells are located in air, space, sea, or land.Type: ApplicationFiled: October 8, 2021Publication date: April 14, 2022Inventors: CHIE-MING CHOU, FANG-MING LU, KUO-LIANG HO, YI-CHUAN HUANG
-
Patent number: 11283013Abstract: A resistive memory device includes a first electrode, a second electrode, a first metal oxide layer, a second metal oxide layer, and a multilayer insulator structure. The first metal oxide layer is disposed between the first electrode and the second electrode in a vertical direction. The second metal oxide layer is disposed between the first metal oxide layer and the second electrode in the vertical direction. The multilayer insulator structure is disposed between the first metal oxide layer and the second metal oxide layer in the vertical direction. The first metal oxide layer includes first metal atoms, the second metal oxide layer includes second metal atoms, and the multilayer insulator structure includes third metal atoms. Each of the third metal atoms is identical to each of the second metal atoms, and an atomic percent of the third metal atoms in the multilayer insulator structure gradually changes in the vertical direction.Type: GrantFiled: June 18, 2020Date of Patent: March 22, 2022Assignee: United Semiconductor (Xiamen) Co., Ltd.Inventors: Yuheng Liu, Yunfei Fu, Chih-Chien Huang, Kuo-Liang Huang, Wen Yi Tan
-
Publication number: 20220085145Abstract: Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.Type: ApplicationFiled: October 15, 2021Publication date: March 17, 2022Inventors: Wei Kai SHIH, Kuo-Liang WANG
-
Patent number: 11275864Abstract: A system and method for privacy identity control for sharing media on a social media platform includes receiving a digital image encoded with a privacy identification data from a media capturing device for sharing on the social media platform, retrieving a first key based on the privacy identification data for decrypting an encrypted personal privacy protocol, wherein the personal privacy protocol is encrypted using a second key, decrypting the encrypted personal privacy protocol using the first key to obtain a decrypted personal privacy protocol, and displaying the digital image on the social media platform based on the decrypted personal privacy protocol.Type: GrantFiled: August 24, 2018Date of Patent: March 15, 2022Assignee: International Business Machines CorporationInventors: Kuo-Liang Chou, Kate Lin, Peter Wu, I-Chien Lin, Chiwen Chang, Ci-Wei Lan, Tsai-Hsuan Hsieh
-
Patent number: 11257923Abstract: A method includes removing a dummy gate structure to form a gate trench over a semiconductor layer, forming a high-k gate dielectric layer over an interfacial layer exposed in the gate trench, depositing a metal-containing precursor over the high-k gate dielectric layer to form a metal-containing layer, and subsequently depositing an aluminum-containing precursor over the metal-containing layer, where depositing the aluminum-containing precursor forms an aluminum oxide layer at an interface between the high-k gate dielectric layer and the interfacial layer and where the metal-containing precursor includes a metal different from aluminum. The method further includes, subsequent to depositing the aluminum-containing precursor, removing a portion of the metal-containing layer, depositing a work-function metal layer over a remaining portion of the metal-containing layer, and forming a bulk conductive layer over the work-function metal layer, resulting in a metal gate structure.Type: GrantFiled: September 17, 2019Date of Patent: February 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsueh Wen Tsau, Ziwei Fang, Huang-Lin Chao, Kuo-Liang Sung
-
Patent number: 11220269Abstract: A computer-implemented method for fording depth estimation based on a real-time image recognition is provided according an embodiment of the present disclosure. In the method, a first image of a low-lying road being submerged under a bridge can be acquired. At least one second image of the low-lying road without being submerged can be determined. A fording depth of the low-lying road can be estimated based on the first image and the at least one second image.Type: GrantFiled: April 2, 2019Date of Patent: January 11, 2022Assignee: International Business Machines CorporationInventors: Cheng Xu, Su Liu, Kuo-Liang Chou, Shun Xian Wu, Yin Xi Guo
-
Publication number: 20210359204Abstract: A resistive memory device includes a first electrode, a second electrode, a first metal oxide layer, a second metal oxide layer, and a multilayer insulator structure. The first metal oxide layer is disposed between the first electrode and the second electrode in a vertical direction. The second metal oxide layer is disposed between the first metal oxide layer and the second electrode in the vertical direction. The multilayer insulator structure is disposed between the first metal oxide layer and the second metal oxide layer in the vertical direction. The first metal oxide layer includes first metal atoms, the second metal oxide layer includes second metal atoms, and the multilayer insulator structure includes third metal atoms. Each of the third metal atoms is identical to each of the second metal atoms, and an atomic percent of the third metal atoms in the multilayer insulator structure gradually changes in the vertical direction.Type: ApplicationFiled: June 18, 2020Publication date: November 18, 2021Inventors: Yuheng Liu, Yunfei Fu, Chih-Chien Huang, Kuo-Liang Huang, WEN YI TAN
-
Patent number: 11164935Abstract: Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.Type: GrantFiled: September 15, 2020Date of Patent: November 2, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei Kai Shih, Kuo-Liang Wang
-
Publication number: 20210272928Abstract: The present disclosure, in some embodiments, relates to a workpiece bonding apparatus. The workpieces bonding apparatus includes a first substrate holder having a first surface configured to receive a first workpiece, and a second substrate holder having a second surface configured to receive a second workpiece. A vacuum apparatus is positioned between the first substrate holder and the second substrate holder and is configured to selectively induce a vacuum between the first surface and the second surface. The vacuum is configured to attract the first surface and the second surface toward one another.Type: ApplicationFiled: May 13, 2021Publication date: September 2, 2021Inventors: Xin-Hua Huang, Kuan-Liang Liu, Kuo Liang Lu, Ping-Yin Liu
-
Publication number: 20210263559Abstract: A docking station has a base, a main casing, a cover body, a ventilation layer, and multiple first lateral openings. The main casing forms a first inner space and has multiple first through-holes. The ventilation layer is in gaseous communication with the first inner space via the first through-holes. The cover body is fixed to the main casing, and the ventilation layer is formed between the cover body and the main casing. The first lateral openings are formed in the cover body and in gaseous communication with the ventilation layer. When in use, heat generated by electronic components inside the first inner space makes air inside the first inner space flow upwards to the ventilation layer and subsequently exits the docking station via the first lateral openings. Meanwhile, cool air enters the first inner space via the first lateral openings to dissipate heat.Type: ApplicationFiled: February 16, 2021Publication date: August 26, 2021Inventors: Kuo-Liang Tseng, Yu-Shih Chin
-
Publication number: 20210226467Abstract: A system is provided to dissipate heat from integrated circuit (IC) packages associated with a main printed circuit board of an uninterruptible power supply. The system includes a high-density heat sink fabricated from a thermally conductive material. The heat sink includes one interconnected wall configured to dissipate heat from components on a first printed circuit board including a first circuit and a second circuit, another interconnected wall configured to dissipate heat from components on a second printed circuit board, and another interconnected wall configured to dissipate heat from components on a third printed circuit board. In a first mode of operation, heat is generated by components in the first and second circuit, and in a second mode of operation, heat is generated by components on at least one of the second or the third printed circuit board and components in the second circuit.Type: ApplicationFiled: January 22, 2020Publication date: July 22, 2021Inventors: Lee Chien-An, Tasi Ping-Chung, Lee Kuo Liang, Pang Jen-Shih, Chen Chung-Hui
-
Publication number: 20210180952Abstract: A microelectromechanical gyroscope system is provided. The system includes a first substrate, a second substrate, and a third substrate. The substrates respectively have a first fixing, a second fixing, and a third fixing surfaces. The system further includes a first sensing, a second sensing and a third sensing module boards respectively fixed to the fixing surfaces. Each sensing module board has several microelectromechanical gyroscopes. A signal processing control board is electrically connected to the first sensing module board, the second sensing module board, and the third sensing module board. Wherein the first substrate, the second substrate, and the third substrate are perpendicular to each other. With the above structure, on each system coordinate axis of the microelectromechanical gyroscope system, at least one gyroscope is aligned with it for data acquisition and measurement. Accordingly, the measurement accuracy of the system is improved.Type: ApplicationFiled: April 3, 2020Publication date: June 17, 2021Applicant: National Applied Research LaboratoriesInventors: Yung-Fu Tsai, Yeong-Wei Wu, Min-Yu Hsieh, Kuo-Liang Wu, Ying-Wen Jan, Chen-Tsung Lin
-
Publication number: 20210175561Abstract: A cold plate for a battery module comprising a plurality of cells that produces heat as charging and discharging is disclosed. The cold plate includes a plurality of first fins distributed in a first subarea of the cold plate; and a plurality of second fins distributed in a second subarea of the cold plate; wherein a second fin coverage of the plurality of second fins distributed in the second subarea is smaller than a first fin coverage of the plurality of first fins distributed in the first subarea when an amount of heat absorption of the second subarea from the plurality of cells is greater than an amount of heat absorption of the first subarea from the plurality of cells.Type: ApplicationFiled: December 4, 2019Publication date: June 10, 2021Inventors: Fu-Min Fang, Kuo-Kuang Jen, Gwo-Huei You, Kuo-An Liang
-
Patent number: 11031369Abstract: An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.Type: GrantFiled: October 16, 2019Date of Patent: June 8, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Xin-Hua Huang, Kuan-Liang Liu, Kuo Liang Lu, Ping-Yin Liu